Electrical Characterization of Silicon-on-Insulator Materials and Devices

389 Pages·1995·14.721 MB·English

by  Sorin Cristoloveanu, Sheng S. Li (auth.)

ELECTRICAL CHARACTERIZATION
OF SILICON-ON-INSULATOR
MATERIALS AND DEVICES
The Kluwer International Series in
Engineering and Computer Science
ELECTRONIC MATERIALS:
SCIENCE AND TECHNOLOGY
Series Editor
Harry L. Tuller
Massachusetts Institute of Technology
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Diamond: Electronic Properties and Applications, Lawrence S. Pan and Don
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Ion Implantation: Basics to Device Fabrication, Emanuele Rimini, author
Solid State Batteries: Materials Design and Optimization, C. Julien
and G. Nazri, authors
Sol-Gel Optics: Processing and Applications, L.c. Klein, editor
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ELECTRICAL CHARACTERIZATION
OF SILICON-ON-INSULATOR
MATERIALS AND DEVICES
by
Sorin Cristoloveanu
Polytechnic Institute of Grenoble
and
Sheng S. Li
University of Florida
....
"
SPRINGER SCIENCE+BUSINESS MEDIA, LLC
Library of Congress Cataloging-in-Publication Data
Cristoloveanu, Sorin.
Electrica! characterization of silicon-on-insulator materials and
devices 1 by Sorin Christoloveanu and Sheng S. Li.
p. cm. -- (The Kluwer international series in engineering and
computer science ; 305)
Includes bibliographical references and index.
ISBN 978-0-7923-9548-5 ISBN 978-1-4615-2245-4 (eBook)
DOI 10.1007/978-1-4615-2245-4
1. Semiconductors--Design and construction. 2. Silicon-on
-insulator technology. 3. Semiconductors--Electric properties.
1. Li, Cheng S., 1938- . II. Title. III. Series.: Kluwer
international series in engineering and computer science ; SECS 305.
TK7871.85.C75 1995
621.3815'2--dc20 94-43971
CIP
Copyright © 1995 by Springer Science+Business Media New York
Originally published by Kluwer Academic Publishers in 1995
So:ftcover reprint ofthe hardcover lst edition 1995
All rights reserved. No part of this publication may oe reproduced, stored in
a retrieval system or transmitted in any form or by any means, mechanical,
photo-copying, recording, or otherwise, without the prior written permission of
the publisher, Springer Science+Business Media, LLC.
Printed on acidjree paper.
To our SOl and non-SOl families
Contents
Preface xiii
1 Introduction 1
1.1 Why SOl? ..... 1
1.2 Why Not Yet SOl? . 4
1.3 Why an SOl Book? 5
2 Methods of Forming SOl Wafers 7
2.1 SIMOX ............. . 7
2.1.1 SIMOX Synthesis ............. . 8
2.1.2 Typical Defects and Electrical Properties 12
2.2 Wafer Bonding . . . . . . . . . . . 16
2.2.1 Bonding Mechanisms. . . . . . . . . . . . 18
2.2.2 Thinning of Bonded Wafers . . . . . . . . 19
2.2.3 Properties and Applications of Bonded Wafers 21
2.3 Zone-Melting Recrystallization ...... 23
2.4 Epitaxial Lateral Overgrowth . . . . . . . 26
2.5 Full Isolation by Porous Oxidized Silicon. 29
2.6 Silicon on Sapphire . . . . . 31
2.6.1 SOS Synthesis ... 31
2.6.2 Electrical Properties 34
2.7 Silicon on Zirconia 36
3 SOl Devices 45
3.1 Advanced CMOS and Bipolar Devices ..... 45
3.1.1 Advanced CMOS Devices and Circuits. 46
3.1.2 Bipolar Devices .... 49
3.2 Radiation-Hardened Circuits ......... . 51
viii Electrical Characterization of SOl Materials and Devices
3.3 High-Voltage Devices . . . . 55
3.4 High-Temperature Devices . 60
3.5 Low-Power Applications . . 62
3.6 Three-Dimensional Devices 64
3.7 Transducers......... 67
3.7.1 Mechanical Sensors. 67
3.7.2 Magnetic Sensors. 68
3.7.3 Chemical Sensors . 70
3.7.4 Thermal Sensors 71
3.7.5 Optical Sensors. . 72
3.8 Innovative Devices . . . . 73
3.8.1 Double-Gate and Volume-Inversion Transistors 73
3.8.2 Other Novel Devices . . . . . . . . . . . . . . . 78
4 Wafer-Screening Techniques 87
4.1 The Basis for Wafer Screening ...... . 87
4.2 Surface Photovoltage ........... . 88
4.2.1 Principle and Experimental Setup 89
4.2.2 Model and Parameter Extraction. 89
4.3 Dual-Beam S-Polarized Reflectance .... 92
4.3.1 Principle and Experimental Setup 92
4.3.2 Model and Parameter Extraction . 94
4.4 Dual-Beam Optical Modulation ..... . 97
4.4.1 Principle and Experimental Setup 97
4.4.2 Theory and Parameter Extraction 98
4.5 Other Optical Methods ....... . 101
4.6 Point Contact Pseudo-MOS Transistor. 104
4.6.1 Principle ..... . 104
4.6.2 Experimental Setup 105
4.6.3 Model......... 107
4.6.4 Parameter Extraction 109
4.7 Quick-Turnaround Capacitance 111
4.8 Pinhole Detection. 114
4.9 Conclusion ...... . 115
5 Transport Measurements 119
5.1 Four-Point Probe .... 119
5.2 Spreading Resistance . . . . . . . . 121
5.3 Hall Effect and Magnetoresistance 124
CONTENTS
IX
5.4 Van der Pauw Measurements 128
5.5 Photoconductivity 134
5.6 PICTS ............. 139
6 SIS Capacitor-Based Characterization Techniques 145
6.1 Capacitance and Conductance Techniques 146
6.1.1 Principle and Experimental Setup 146
6.1.2 Model and Equivalent Circuit . . . 148
6.1.3 Coupling of Surface Potentials .. 153
6.1.4 Surface Potential Versus Gate Bias. 156
6.1.5 Parameter Extraction · ....... 157
6.2 Bias-Scan DLTS Technique . . . . . . . . . 163
6.2.1 Physical Principle and Experimental Setup 163
6.2.2 Carrier Dynamics. . . . . . . . . . 165
6.2.3 Theory and Parameter Extraction ... 166
6.3 Temperature-Scan DLTS Technique ...... 171
6.3.1 Decoupling the F /0 and S/O Interfaces 172
6.3.2 Theory and Parameter Extraction 172
6.4 Zerbst Method and Generation Lifetime 174
.......
6.5 MOS Capacitance Method. 176
7 Diode Measurements 185
7.1 Current-Voltage Measurements in a P-N Diode. 185
7.2 Differential Current/Capacitance Method 187
7.2.1 Principle and Experimental Setup 188
7.2.2 Model ......... 188
7.2.3 Parameter Extraction 190
• • I •• I •
7.3 Gated-Diode Measurements ........ 194
7.3.1 Principle and Experimental Setup 194
7.3.2 Model ........... 194
7.3.3 Parameter Extraction · . 196
7.3.4 Interface Coupling Effects 198
7.3.5 Complementary Aspects . 199
7.4 Deep-Level Transient Spectroscopy 200
7.4.1 Principle and Experimental Setup 201
7.4.2 Theory and Parameter Extraction 201
x Electrical Characterization of SOl Materials and Devices
8 MOS Transistor Characteristics 209
8.1 Interface Coupling .. 210
8.2 Floating-Body Effects ... . 213
8.2.1 Kink Effect ..... . 214
8.2.2 Hysteresis and Latch . 216
8.2.3 Bipolar Transistor Action 220
8.2.4 SOl and Phase Transitions 228
8.3 Transients Effects. . . . . . . . . . 229
8.3.1 Bias-Induced Effects . . . . 229
8.3.2 Thermal Transient Effects. 234
8.4 Edge Effects . . . . . . . . . . . 235
8.5 Threshold Voltage ......... 240
8.5.1 Lim and Fossum Model . . 240
8.5.2 Depletion-Mode Transistors 243
8.5.3 Experimental Results 244
8.5.4 Developments. 247
8.6 Subthreshold Slope . . . . . . 249
8.6.1 Model......... 249
8.6.2 Experimental Results 253
8.7 Transconductance ...... 254
8.7.1 Mobility Definitions 254
8.7.2 Fully Depleted SOl MOSFETs 255
8.7.3 Series-Resistance Effects . . . . 258
8.7.4 Experiment and Parameter Extraction . 261
8.7.5 Transconductance in Depletion-Mode MOSFETs . 266
9 Transistor-Based Characterization Techniques 275
9.1 Profiling Vertical Inhomogeneities. 276
9.1.1 Measurement Setup 276
9.1.2 Profiling Method . . 278
9.1.3 Experimental Data. 279
9.2 Charge-Pumping Technique 283
9.2.1 Physical Principle and Basic Experimental Setup 283
9.2.2 Model.................. 283
9.2.3 Parameter Extraction . . . . . . . . . 285
9.2.4 Coupling Effects on Charge Pumping 287
9.2.5 Profiling the Interface Traps. 289
9.2.6 Dimensional Effects 290
9.3 Low-Frequency Noise ........ . 291
CONTENTS
Xl
9.3.1 Physical and Experimental Principles 291
9.3.2 Model of 1/f Noise in MOSFETs .. . 293
9.3.3 Other Types of Noise ........ . 294
9.3.4 Experiment and Parameter Extraction 296
9.3.5 Interface Coupling Effects om Noise 300
9.4 Dynamic Transconductance ....... . 301
9.4.1 Theory and Parameter Extraction . 303
9.4.2 Model Variants . . . . . . . . . . . . 305
9.4.3 High-Low-Frequency Transconductance 307
9.4.4 Experiment ............... . 308
9.5 Drain Current Transient Technique . . . . . . . 311
9.5.1 Partially Depleted Accumulation-Mode Transistors 312
9.5.2 Partially Depleted Inversion-Mode MOSFETs . 314
9.5.3 Model Refinements ........... . 315
9.5.4 Experiment and Parameter Extraction. 317
9.6 The Current-DLTS Technique ..... . 321
9.6.1 Principle and Experimental Setup 321
9.6.2 Theory and Parameter Extraction 322
9.7 The Threshold-Voltage Method . . . . . . 327
9.7.1 Principle and Experimental Setup 327
9.7.2 Theory and Parameter Extraction 327
9.8 Concluding Remarks . . . . . . . . 331
10 Monitoring Transistor Degradation 337
10.1 Hot-Carrier-Induced Degradation . 337
10.1.1 Basic Degradation Mechanisms 338
10.1.2 Stressing Conditions . . . . . . 345
10.1.3 Extraction of the Defective-Region Parameters 346
10.1.4 Aging Monitors and Device Lifetime . . . . .. 349
10.1.5 Hot-Carrier Degradation of SIMOX Buried Oxides 352
10.1.6 Gate Oxide Degradation. . . . . . 355
10.1.7 Coupling Degradation Mechanisms 358
10.2 Radiation-Induced Defects. . . . . . . . . 362
10.2.1 Buried-Oxide Degradation. . . . . 363
10.2.2 Front-Interface, Edge, and Film Damage. 366
10.2.3 Special Radiation Effects ......... 367
List of Symbols 375