Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

335 Pages·1997·14.67 MB·English

by  Constantinos Christofides and Gérard Ghibaudo (Eds.)

Effect of Disorder and Defects
in Ion-Implanted Semiconductors:
Optical and Photothermal
Characterization
SEMICONDUCTORS
AND SEMIMETALS
Volume 46
Semiconductors and Semimetals
A Treatise
Edited by R. K. Willardson Eicke R. Weber
CONSULTING PHYSICIST DEPARTMEOFN MTA TERIALSSC IENCE
SPOKANEW, ASHINGTON AND MINERAELNG INEERING
UNIVERSIOTFY C ALIFORNAITA
BERKELEY
In memory of Dr. Albert C. Beer, Founding Co-Editor in 1966
and Editor Emeritus of Semiconductors and Semimetals.
Died January 19, 1997, Columbus, OH.
Effect of Disorder and Defects
in Ion-Implanted Semiconductors:
Optical and Photothermal
Characterization
SEMICONDUCTORS
AND SEMIMETALS
Volume 46
Volume Editors
CONSTANTINOS CHRISTOFIDES
DEPARTMENT OF NATURAL SCIENCES
UNIVERSITY OF CYPRUS
NICOSIA, CYPRUS
GERARD GHIBAUDO
LABORATOIRE DE PHYSIQUE DES
COMPOSANTS A SEMICONDUCTEURS
ENSERG
GRENOBLE, FRANCE
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Contents
LISTO F CONTRIBUTOR.S . . . . . . . . . . . . . . . . . . . . . . xi
...
FOREWOR.D. . . . . . . . . . . . . . . . . . . . . . . . . . . Xlll
Chapter 1 Ellipsometric Analysis
M . Fried. T. Lohner and J . Gyulai
I . Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
I1. Principle of Ellipsometry . . . . . . . . . . . . . . . . . . . . . . . . 3
111. General Remarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
IV. Optical Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
V . The Complex Dielectric Function . . . . . . . . . . . . . . . . . . . . 9
VJ. Light Penetration . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
VII . Effective Medium Theory . . . . . . . . . . . . . . . . . . . . . . . . 13
VIII . Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
I . Gallium Arsenide . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2 .Germanium . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3. Indium Phosphide . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.Silicon . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5 . Silicon-on-Insulator (SOI) Structures . . . . . . . . . . . . . . . . . 24
6 . Separation by IMplantation of Oxygen (SIMOX) . . . . . . . . . . . . 26
7 . Separation by IMpiantation of Nitrogen (SIMNI) . . . . . . . . . . . 27
IX . Sophisticated Multilayer Optical Models . . . . . . . . . . . . . . . . . 27
1. Profiles with Unknown Depth Variation . . . . . . . . . . . . . . . . 29
2. Profiles with Known Depth Variation . . . . . . . . . . . . . . . . . 31
X . Closing Remarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
vii
viii CONTENTS
Chapter 2 Transmission and Reflection Spectroscopy on
Ion Implanted Semiconductors
Antonios Seas and Constantinos Christofides
I . Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
I1 . General Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
111. Recent Optical Experimental Studies on Implanted Silicon . . . . . . . . . 47
1. Phosphorous-Implanted Silicon . . . . . . . . . . . . . . . . . . . . 47
2. Fourier Transform Infrared Optical Measurements . . . . . . . . . . . 49
IV. Theoretic Background . . . . . . . . . . . . . . . . . . . . . . . . . 60
V . Discussion and Analysis . . . . . . . . . . . . . . . . . . . . . . . . 62
1. Influence of Annealing Temperature on the Plasma Wavelength . . . . . . 62
2. Effective Mass vs . Annealing Temperature . . . . . . . . . . . . . . . 61
VI . Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Chapter 3 Photoluminescence and Raman Scattering of Ion
.
Implanted Semiconductors Influence of Annealing
Andreas Othonos and Constantinos Christofides
I . Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
I1. Photoluminescence and Raman Scattering Theory . . . . . . . . . . . . . 74
1. Photoluminescence Theory . . . . . . . . . . . . . . . . . . . . . . 74
2. Raman Scattering Theory . . . . . . . . . . . . . . . . . . . . . . 77
I11 . Photoluminescence and Raman Scattering Techniques . . . . . . . . . . . 79
1. Common Photoluminescence Techniques . . . . . . . . . . . . . . . . 79
2. Raman Scattering Techniques . . . . . . . . . . . . . . . . . . . . . 80
3 . Time-Resolved Measurements . . . . . . . . . . . . . . . . . . . . 82
1V . Characterization of Ion-Implanted Semiconductors . . . . . . . . . . . . . 84
1. Photoluminescence Experimental Studies . . . . . . . . . . . . . . . . 84
2. Raman Studies on Ion-Implanted Semiconductors . . . . . . . . . . . . 97
V . Summary and Future Perspectives . . . . . . . . . . . . . . . . . . . . 111
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
Chapter 4 Photomodulated Thermoreflectance Investigation of
.
Implanted Wafers Annealing Kinetics of Defects
Constant inos Christofides
I . Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
I1 . Photomodulated Thermoreflectance Theory . . . . . . . . . . . . . . . . 116
1. Basic Photothermal Equations . . . . . . . . . . . . . . . . . . . . 116
2. Three-Dimensional Diffusion . . . . . . . . . . . . . . . . . . . . . 118
III. Experimental Methodology . . . . . . . . . . . . . . . . . . . . . . . 119
1. Room Temperature Measurements . . . . . . . . . . . . . . . . . . 119
2. Measurements versus Temperature . . . . . . . . . . . . . . . . . . 121
IV. Experimental Results and Discussion . . . . . . . . . . . . . . . . . . . 122
1. Characterization of Implanted Wafers . . . . . . . . . . . . . . . . . 122
2 . Influence of Annealing . . . . . . . . . . . . . . . . . . . . . . . . 126
CONTENTS ix
3. Temperature Influence on the Photothermal Signal . . . . . . . . . . . 136
V . Recent Developments . . . . . . . . . . . . . . . . . . . . . . . . . 144
1. Single-Beam Thermowave Technique . . . . . . . . . . . . . . . . . 144
2 . Extension to Two-Layer Model . . . . . . . . . . . . . . . . . . . . 145
VI . Summary and Future Perspectives . . . . . . . . . . . . . . . . . . . . 146
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
Chapter 5 Photothermal Deflection Spectroscopy Characterization
of Ion-Implanted and Annealed Silicon Films
U. Zammit
1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
II. Theory and Experiment . . . . . . . . . . . . . . . . . . . . . . . . 154
I11. Results and Discussion . . . . . . . . . . . . . . . . . . . . . . . . . 158
1. The Effect of Implantation Dose . . . . . . . . . . . . . . . . . . . 158
2. Effects of Annealing of Damaged Crystalline Material . . . . . . . . . . 166
3. Effects of Annealing of Amorphous Material . . . . . . . . . . . . . . 167
1V . Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
Chapter 6 Photothermal Deep-Level Transient Spectroscopy
of Impurities and Defects in Semiconductors
Andreas Mandeiis. Arief Budiman and Miguei Vargas
I . Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
I1. Physical Foundations of Photothermal Radiometric Deep-Level
TransientSpectroscopy . . . . . . . . . . . . . . . . . . . . . . . . . 181
111. Theory of Photothermal Radiometric Deep-Level Transient Spectroscopy . . . 184
IV . Instrumental Foundations of Photothermal Radiometric
Deep-Level Transient Spectroscopy: The Lock-In Rate-Window Method . . . 188
V . Experiment and Discussion . . . . . . . . . . . . . . . . . . . . . . . 190
1. Constant-Temperature Photothermal Radiometric Deep-Level
Transient Spectroscopy of Silicon . . . . . . . . . . . . . . . . . . . 191
2. Constant Duty-Cycle Photothermal Radiometric Deep-Level Transient
Spectroscopy of Semi-Insulating-Gallium Arsenide . . . . . . . . . . . 198
VI. Potential for Ion-Implantation Diagnostics and Conclusions . . . . . . . . 207
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209
Chapter 7 Ion Implantation into Quantum-Well Structures
R . Kalish and S. Charbonneau
I . Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 213
II . General Background . . . . . . . . . . . . . . . . . . . . . . . . . 216
1. Ion-Implantation-Related Damage . . . . . . . . . . . . . . . . . 217
2 . Annealing Ion-Implantation-Related Damage . . . . . . . . . . . . . 220
3. Evaluation of Structural Modifications . . . . . . . . . . . . . . . . 221
4 . Evaluation by Optical Techniques . . . . . . . . . . . . . . . . . . 224
I11 . Ion-Beam-Induced Modifications of QW Structures . . . . . . . . . . . 230