Early Stages of Oxygen Precipitation in Silicon

535 Pages·1996·21.954 MB·English

by  G. D. Watkins (auth.), R. Jones (eds.)

Early Stages of
Oxygen Precipitation ih Silicon
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Series 3. High Technology - Vol. 17
Early Stages of
Oxygen Precipitation
in Silicon
edited by
R.Jones
Department of Physics,
University of Exeter,
Exeter, U.K.
Kluwer Academic Publishers
Dordrecht / Boston / London
Published in cooperation with NATO Scientific Affairs Division
Proceedings of the NATO Advanced Research Workshop on
Early Stages of Oxygen Precipitation in Silicon
Exeter, U.K.
March 26-29, 1996
A C.I.P. Catalogue record for this book is available from the Library of Congress.
ISBN-13: 978-94-010-6645-7 e-ISBN-13: 978-94-009-0355-5
DOl: 10.1007/978-94-009-0355-5
Published by Kluwer Academic Publishers,
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Softcover reprint ofthe hardcover 1st edition 1996
Contents
Preface ..................................................... ix
Contributors ................................................. Xl
Oxygen-related defects in silicon: Studies using stress-induced alignment
G.D. Watkins . ............................................... .
The initial stages of oxygen aggregation in silicon: Dimers, hydrogen and self
interstitials
R.C. Newman ............................................... 19
Infrared studies of the early stages of oxygen clustering in silicon
l.L. Lindstrom and T. Hallberg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 41
Magnetic resonance investigations of thermal donors in silicon
C.A.l. Ammerlaan, I.S. Zevenbergen, Yu. V. Martynov and T. Gregorkiewicz ... , 61
Magnetic resonance on heat treatment centres in silicon
l.-M. Spaeth ................................................ 83
Effect of hydrogen on oxygen-related defect reactions in silicon at elevated
temperatures
v.P. Markevich, 1.F. Medvedeva and L.I. Murin ....................... 103
Passivation of thermal donors by atomic hydrogen
l. Weber and D.l. Bohne ....................................... 123
Oxygen-carbon, oxygen-nitrogen and oxygen-dimer defects in silicon
c.P. Ewels, R. Jones and S. Oberg ................................ 141
The role of trivalent oxygen in electrically active complexes
P. Detik ................................................... 163
Hydrogen-oxygen interactions in silicon
S.K. Estreicher, Y.K. Park and P.A. Fedders 179
Oxygen diffusion in silicon: The influence of hydrogen
M. Ramamoorthy and S. T. Pantelides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197
vi
Generation of thermal donors, nitrogen-oxygen complexes and hydrogen-oxygen
complexes in silicon
M. Suezawa ................................................. 207
The electronic structure of the oxygen donor in silicon from piezospectroscopy
M. Stavola ................................................. 223
Low temperature diffusion and agglomeration of oxygen in silicon
U. Gosele, E. Schroer, P. Werner and T. Y. Tan ........................ 243
Roles of structural defects and contaminants in oxygen precipitation in silicon
K. Sumino .................................................. 263
Various forms of isolated oxygen in semiconductors
B. Pajot ................................................... 283
Oxygen-related luminescence centres created in Czochralski silicon
E. C. Lightowlers and G. Davies .................................. 303
The nitrogen-pair oxygen defect in silicon
F. Berg Rasmussen, S. Oberg, R. Jones, C. Ewels, J. Goss, J. Miro and
P. Deak ................................................... 319
Thermal double donors in silicon: A new insight into the problem
L.J. Murin and V.P. Markevich ................................... 329
Interaction of positrons with vacancy-oxygen complexes and oxygen clusters in
silicon
M. Fujinami ................................................ 337
Fomlation of thermal donors in Czochralski grown silicon under hydrostatic
pressure up to 1G Pa
V. V. Emtsev, B.A. Andreev, A. Misiuk and K. Schmalz ................... 345
Complexes of oxygen and group II impurities in silicon
E. McGlynn, M.O. Henry, S.E. Daly and K.G. McGuigan . ................ 355
Copper and oxygen precipitation during thermal oxidation of silicon: A TEM
and EBIC study
A. Correia, D. Ballutaud and A. Boutry-Forveille ...................... 363
Computer simulated distribution of defects formed during Cz-Si crystal growth
K. Kawakami, H. Harada, T. Iwasaki and R. Habu ..................... 371
A small angle neutron scattering study of oxygen precipitation in silicon
R.i. Stewart, S. Messoloras and S. Rycroft ........................... 381
vii
Atomic composition, structure and vibrational excitation of substitutional
carbon-oxygen complexes in silicon
H. Yamada-Kaneta, Y. Shirakawa and C. Kaneta ....................... 389
Influence of isovalent doping on the processes of thermal donors formation in
silicon
L.I. Khirunenko, V.I. Shakhovtsov, V. V. Shumov and V.I. Yashnik ........... 397
Some properties of oxygen-related radiation induced defects in silicon and
germanium
L.I. Khirunenko, V.I. Shakhovtsov, V. V. Shumov and V.I. Yashnik ........... 403
Defect profiling of oxygen-related defects using a slow positron beam
AP. Knights, R.D. Goldberg, U. Myler and P.J. Simpson ................. 411
Shallow N-O donors in silicon
A Gali, J. Miro and P. Deak .................................... 419
The C-Si-O-Si(oC) four-member ring and the Si-GI5 centre
L.c. Snyder, R. Wu and P. Deak .................................. 427
Kinetics of oxygen loss and thermal donor formation in silicon: The rapid
diffusion of oxygen clusters
S.A. McQuaid and R.C. Newman . ................................. 433
Molecular dynamics study of oxygen defects in silicon
P.J. Gronberg, J. von Boehm and R.M. Nieminen ...................... 441
A kinetic model for precipitation of oxygen in silicon
S. Senkader and G. Hobler ...................................... 447
Oxygen gettering and thermal donor formation at post-implantation annealing of
silicon
AG. Ulyashin, Yu.A Bumai, AI. Ivanov, V.s. Varichenko, N.M. Kazychits,
A.M. Zaitsev and WR. Fahrner ................................... 455
Carbon-hydrogen-oxygen related centre responsible for the I-line luminescence
system
J.E. Gower, E. C. Lightowlers, G. Davies and A.N. Safonov ................ 463
Luminescence investigations of the interaction of oxygen with dislocations in
Cz Si
V. Higgs ................................................... 469
viii
An isochronal annealing study of the kinetics of VO and V0 defects in neutron
2
irradiated Si
CA. Londos, N V. Sarlis and L.G. Fytros ............................ 477
Unifonn stress effect on nucleation of oxygen precipitates in Czochralski grown
silicon
A. Misiuk .................................................. 485
On the impact of grown-in silicon oxide precipitate nuclei on silicon gate oxide
integrity
1. Vanhellemont, G. Kissinger, K. Kenis, M. Depas, D. Gra/, U. Lambert and
P. Wagner ................................................. 493
Low temperature annealing studies of the divacancy in p-type silicon
M.-A. Trauwaert, 1. Vanhellemont, A.-M. van Bavel, P. Clauws, A. Stesmans,
H.E. Maes and G. Langouche .................................... 501
Anomalous distribution of oxygen precipitates in a silicon wafer after annealing
H. Ono, T. Ikarashi, S. Kimura, A. Tanikawa and K. Terashima ............ 509
Oxygen precipitation in MCZ silicon: Behaviour and dependence on the origin
of raw material and growth conditions
T.M. Tkacheva, G.N Petrov, K.L. Enisherlova and NA. Iasamanov .......... 517
Index ..................................................... 527
Preface
It was fOlllld as long ago as 1954 that heating oxygen rich silicon to
around 450°C produced electrical active defects - the so called thermal
donors. The inference was that the donors were created by some defect
produced by the aggregation of oxygen. Since then, there has been an enor
mous amount of work carried out to elucidate the detailed mechanism by
which they, and other defects, are generated. This task has been made all
the more relevant as silicon is one of the most important technological ma
terials in everyday use and oxygen is its most common impurity. However,
even after forty years, the details of the processes by which the donors and
other defects are generated are still obscure.
The difficulty of the problem is made more apparent when it is realised
that there is only one oxygen atom in about ten thousand silicon atoms and
so it is difficult to devise experiments to 'see' what happens during the early
stages of oxygen precipitation when complexes of two, three or four 0xygen
atoms are formed. However, new important new findings have emerged from
experiments such as the careful monitoring of the changes in the infra
red lattice absorption spectra over long durations, the observation of the
growth of new bands which are correlated with electronic infra-red data,
and high resolution ENDOR studies. In addition, progress has been made
in the improved control of samples containing oxygen, carbon, nitrogen and
hydrogen.
In parallel with these developments, there have been great advances in
modelling techniques. A large amount of modelling had already been carried
out and the central role of an overcoordinated oxygen atom in donors had
already been emphasised. Recent progress in first principles methods has,
above all else, given greater confidence in predictive theory, and it is thus
natural that the subject has excited the interest of so many theoreticians.
The time seemed ripe for a workshop to bring together leading work
ers in the field. A key aim of the workshop was to promote collaboration
between experimental and modelling groups.
The workshop was made possible by funding both from NATO and the
University of Exeter and both organisations are thanked for their support.
I also thank my co-organisers Peter Deak and Stefan Estreicher for support
and encouragement. The bulk of the daily administrative work fell locally
on the shoulders of Chris Ewels, Jon Goss, Paul Leary, Chris Latham, Paul
Rawlins and Sailesh Patel, all of whom worked very hard to ensure the
workshop was a success. They were keen to ensure that details of itineraries,
the abstracts for the talks and posters and the excursions were available on
the internet. This proved to be very useful for those young enough - or with
enough time - to browse these pages, but the responses made it clear that
ix