APPLIEDPHYSICSLETTERS96,113102(cid:1)2010(cid:2) A direct transfer of layer-area graphene William Regan,1,2 Nasim Alem,1,2,3 Benjamín Alemán,1,2,3 Baisong Geng,1,4 Çağlar Girit,1,2 Lorenzo Maserati,1,5 Feng Wang,1,2,3 Michael Crommie,1,2,3 and A. Zettl1,2,3,a(cid:1) 1DepartmentofPhysics,UniversityofCaliforniaatBerkeley,Berkeley,California94720,USA 2MaterialsSciencesDivision,LawrenceBerkeleyNationalLaboratory,Berkeley,California94720,USA 3CenterofIntegratedNanomechanicalSystems(COINS),Berkeley,California94720,USA 4SchoolofPhysicalScienceandTechnology,LanzhouUniversity,Lanzhou730000, People’sRepublicofChina 5PolitecnicodiMilano,20133Milano,Italy (cid:1)Received 10 December 2009; accepted 6 February 2010; published online 15 March 2010(cid:2) Afacilemethodisreportedforthedirect(cid:1)polymer-free(cid:2)transferoflayer-areagraphenefrommetal growth substrates to selected target substrates. The direct route, by avoiding several wet chemical steps and accompanying mechanical stresses and contamination common to all presently reported layer-area graphene transfer methods, enables fabrication of layer-area graphene devices with unprecedented quality. To demonstrate, we directly transfer layer-area graphene from Cu growth substrates to holey amorphous carbon transmission electron microscopy (cid:1)TEM(cid:2) grids, resulting in robust, clean, full-coverage graphene grids ideal for high resolution TEM. © 2010 American Institute of Physics. (cid:3)doi:10.1063/1.3337091(cid:4) Graphene, a single atomic monolayer of sp2-bonded Asademonstrationofprinciple,wechoseanamorphous hexagonal carbon with extraordinary mechanical, electronic, carbon (cid:1)a-C(cid:2) transmission electron microscopy (cid:1)TEM(cid:2) andopticalproperties,hasbecomeasubjectofgreatinterest grid—SPIAuQuantifoilwith1.2micronholeya-Cfilm—as in materials science following its experimental isolation by the target substrate. However, as discussed below, other tar- themechanicalcleavageofgraphite.1,2Intheyearssincethis get substrates are possible. The structure of graphene makes development, more synthesis methods have emerged to iso- it ideally suited for use as a TEM support.9–13 Graphene is latesingletofewlayergraphene,suchasepitaxialgrowthon only a single carbon atom thick, an order of magnitude thin- SiC,3,4 oxidative/thermal intercalation and ultrasonication of ner than the best currently available amorphous TEM sup- graphite,5andmostrecentlybychemicalvapordepositionon ports. This thinness and the low atomic number of carbon metal substrates such as Ni6 and Cu.7 In particular, Cu makegraphenealmostcompletelytransparenttotheelectron growthhasgarneredconsiderableinterestduetoitsabilityto beam.Theslightbeaminteractionwiththehexagonalcarbon produce macroscopic areas of mostly monolayer graphene, monolayer generates a well-defined signal that can be easily with domain sizes comparable to the size of the largest subtracted from resulting images and diffraction patterns. flakes that can be produced by mechanical exfoliation. In Somewhat counterintuitively, one can often achieve higher order for growth on Cu to be a viable route to large-scale resolution images of a graphene-supported object than of a graphene applications,8 there must be a reliable method for similarsuspendedobjectbecause,despitenotbeingperfectly transparent to the electron beam, the graphene support helps transferring the graphene from metallic Cu substrates to more useful (cid:1)e.g., insulating(cid:2) substrates. To date, transfer of dampen vibrations that would blur the suspended object. Graphene may therefore be the best possible TEM support layer-area graphene has been achieved using a polymer coating—typically polymethyl methacrylate (cid:1)PMMA(cid:2) or for studying a variety of materials, namely, nanostructures polydimethylsiloxane(cid:1)PDMS(cid:2)—asatemporaryrigidsupport and biological molecules that could otherwise not be re- solved with conventional TEM supports.10,11 While exfoli- during etching of the metal to prevent folding or tearing of thegraphene.6,7Unfortunately,theuseofthesepolymersne- ated graphene has been previously isolated on TEM grids,9,10,12,13 these methods require delicate or cumbersome cessitates several wet chemical steps that can contaminate processing and limit the suspended graphene area to exfoli- and mechanically damage the graphene. ated flake sizes, 100 microns in diameter at most. Such a In this letter, a simple method is described for the direct small target makes sample preparation difficult and unreli- transfer of layer-area graphene from Cu growth substrates to able.Thus,areliable,cleantransferoflayer-areagrapheneto varioustargetsubstrates.Surfacetensionandevaporationare TEM grids would be a significant advance for high reso- used to pull Cu-supported graphene into intimate contact lution microscopy. with the targets, simultaneously achieving the desired Figure1illustratestworoutes,astandardpolymer-based graphene/targetbondandprovidingarigidgraphenesupport method (cid:1)left(cid:2) and our direct method (cid:1)right(cid:2), to transfer (cid:1)the target substrate(cid:2) during subsequent Cu etching.9 This graphene from Cu growth substrates to TEM grids. Both direct transfer is cleaner and gentler than polymer-based transfers begin with layer-area graphene growth on a Cu methods, making it ideal for the fabrication of a variety of foil—Alfa Aesar No. 13382, 25 microns thick—via low- optical, chemical, and electronic devices that utilize large, pressure chemical vapor deposition.7 A rigid support is uniform graphene sheets. neededtopreventdestructionoftheatomicallythingraphene film during Cu etching. In the standard transfer, this support a(cid:2)Electronicmail:[email protected]. isapolymer,suchasPMMAappliedviaspin-coating.Inthe 0003-6951/2010/96(cid:2)11(cid:1)/113102/3/$30.00 96,113102-1 ©2010AmericanInstituteofPhysics Author complimentary copy. 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DATES COVERED 15 MAR 2010 2. REPORT TYPE 00-00-2010 to 00-00-2010 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER A direct transfer of layer-area graphene 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) 5d. PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION University of California at Berkeley,Department of REPORT NUMBER Physics,Berkeley,CA,94720 9. SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR’S ACRONYM(S) 11. SPONSOR/MONITOR’S REPORT NUMBER(S) 12. DISTRIBUTION/AVAILABILITY STATEMENT Approved for public release; distribution unlimited 13. SUPPLEMENTARY NOTES 14. ABSTRACT 15. SUBJECT TERMS 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF 18. NUMBER 19a. NAME OF ABSTRACT OF PAGES RESPONSIBLE PERSON a. REPORT b. ABSTRACT c. THIS PAGE Same as 3 unclassified unclassified unclassified Report (SAR) Standard Form 298 (Rev. 8-98) Prescribed by ANSI Std Z39-18 113102-2 Reganetal. Appl.Phys.Lett.96,113102(cid:2)2010(cid:1) FIG. 3. (cid:1)a(cid:2)Atypical image of a low-defect region with large atomically cleanareas.Scale=25 nm.(cid:1)b(cid:2)SADofthisregionshowingthehexagonal structure of the (cid:1)0001(cid:2) basal plane. Tilt measurements performed in this regionyieldedinvariantdiffractionintensities,astrongindicatorofmono- layergraphene. floating the sample on a solution of aqueous FeCl (cid:1)0.1 3 g/mL(cid:2) for approximately 2 h. After Cu etching, the direct transfer process is complete.The sample, now referred to as agrapheneTEMgrid,isfloatedonde-ionized(cid:1)DI(cid:2)waterand rinsed in IPAto wash off remaining Cu etchant, remove or- ganics, and encourage effective drying. The standard trans- fer,however,requiresseveraladditionalstepswhichdamage and contaminate the graphene.After removal of the Cu, the FIG. 1. (cid:1)Color online(cid:2) A comparison of the standard (cid:1)e.g., PMMA(cid:2) and delicate PMMA/graphene film is transferred to a DI bath to directtransferoflayer-areagraphenetoholeya-CTEMgrids. wash off remaining etchant and then extracted from the DI bath by pulling it out onto the target TEM grid. Finally, the PMMAis removed with acetone and the sample is rinsed in direct transfer, this support is provided by the target sub- IPA.Inshort,thedirecttransferprocessismuchcleanerthan strate, specifically the TEM grid’s a-C film. To bond the the standard polymer transfer as it involves fewer potential grapheneanda-C,theTEMgridisplacedontopofgraphene on Cu and a drop of isopropanol (cid:1)IPA(cid:2) is gently placed on contaminants (cid:1)PMMA, acetone(cid:2). Additionally, by anchoring thegrid’sa-Cfilmtothegrapheneintheinitialwetstep,the topofthegridtowetboththegrid’sa-Cfilmandtheunder- direct transfer process avoids mechanical damage suffered lying graphene film. As the IPA evaporates, surface tension draws the graphene and a-C together into intimate contact.9 during wet transfers of the graphene/PMMAfilm, producing (cid:1)To achieve strong adhesion, the evaporative surface tension a much more robust graphene TEM grid than the standard polymer transfer. must be strong enough to slightly warp either the Cu foil or Characterization of direct transfer graphene TEM grids thetargetsubstrate,socaremustbetakenwhenchoosingCu foil and target thickness.(cid:2) The completeness of the adhesion is performed on a JEOL 2010 TEM operated at 100 kV. Figure2showsthegraphenegridatdifferentmagnifications. between the graphene and a-C can be confirmed by optical Macroscopicgrid-widegraphenecoverageisapparentinFig. microscopy, as optical interference effects give a noticeable 2(cid:1)a(cid:2), an optical micrograph captured near the end of the contrastdifferencebetweenadheredandnonadheredregions. Figure 2(cid:1)a(cid:2) shows a grid near the end of this evaporative evaporativeadhesionstep.Darkerregionsinthisimageshow where graphene has bonded to the a-C support. Figure 2(cid:1)b(cid:2), process, when all but the top portion of the grid has been a subset of a grid frame captured by TEM, reveals large adhered onto the graphene on Cu.A10 to 20 min bake on a unperturbed graphene sheets with occasional folds and hot plate at 120 °C helps to evaporate any remaining IPA cracks. Figure 2(cid:1)c(cid:2) shows a higher magnification image of a andstrengthenthegraphene/a-Cbond.Thenextstepinboth single graphene domain covering an a-C hole. Figure 3(cid:1)a(cid:2) transfer processes is to etch away the Cu foil, achieved by shows a typical view of the suspended graphene, with large (cid:1)tens of nanometers(cid:2) atomically clean regions separated by scattered amorphous and/or organic materials covering the highly reactive graphene surface, rivaling the cleanliness seen earlier with exfoliated graphene flakes transferred to TEM grids.10 We detect no evidence of polycrystalline Cu residueonthesurface,suggestingacompleteandcleanetch. Selected area diffraction (cid:1)SAD(cid:2) of the region in Fig. 3(cid:1)a(cid:2) is showninFig.3(cid:1)b(cid:2),revealingthedistinctivehexagonalstruc- ture of graphene. The invariant intensity of the diffraction FIG. 2. (cid:1)Color online(cid:2) (cid:1)a(cid:2) Optical microscopy showing nearly complete pattern during tilting gives unambiguous evidence that the adhesion(cid:1)topedgenotyetadhered(cid:2)betweentheTEMgrid’sa-Cfilmand membrane is indeed a single layer.12,14 thegrapheneonCu,shownduringtheevaporativestickingprocess.Scale Figure 4(cid:1)a(cid:2) reveals a fold or grain boundary. Folds are =0.5 mm. (cid:1)b(cid:2) Portion of a grid frame showing large-domain, clean graphene sheets with some cracks and folds. Scale=10 (cid:1)m. (cid:1)c(cid:2) Clean, commonly seen in metal-based layer-area graphene growth, singlegraingraphenecoveringa-Chole.Scale=0.5 (cid:1)m. possibly forming to relieve stress during the cooling of the Author complimentary copy. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp 113102-3 Reganetal. Appl.Phys.Lett.96,113102(cid:2)2010(cid:1) We thank W. Gannett for assistance with experiments andB.KesslerandM.Rousseasforhelpfuldiscussions.This work was supported in part by the Office of Naval Research MURI program under Grant no. N00014–09–1–1066 which provided for development of the fabrication method, by the Director, Office of Energy Research, Materials Sciences and Engineering Division, of the U. S. Department of Energy under Contract No. DE-AC02–05CH11231 through the sp2-bonded Materials Program which provided for growth facilities, and by the National Science Foundation through the Center of Integrated Nanomechanical Systems under FIG.4. (cid:1)a(cid:2)Aregionwithafoldorgrainboundaryinthegraphene.Scale Grant No. EEC-0832819, and through Grant No. DMR =50 nm.(cid:1)b(cid:2)SADofthisregionshowingthehexagonalgraphenestructure, 0906539, which provided for microscopy and diffraction withsmallandlargeangleseparationofdiffractionspotsduetosheetmis- characterization. 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