DTIC ADA442910: 1999 Aged Report

68 Pages·1.9 MB·English

by  Defense Technical Information Center

1999 AGED REPORT
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1. REPORT DATE 2. REPORT TYPE 3. DATES COVERED
1999 N/A -
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1999 Aged Report
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Office of the Under Secretary of Defense Acquisition and Technology REPORT NUMBER
Washington, DC 20301-3140
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NOV 29, 2000
DIRECTORATE FOR FREEDOM OF INFORMATION
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DEPARTMENT OF DEFENSE
Table of Contents
1. ADVISORY GROUP ON ELECTRON DEVICES...........................................................1
1.1 The Goal of the DoD Electron Device Program.........................................................................................1
1.2 Mission and Functions of the Advisory Group on Electron Devices........................................................1
1.3 Organization and Focus of Activities..........................................................................................................2
1.3.1 Broad Industry Trends...........................................................................................................................3
1.4 Projected Military System Requirements...................................................................................................5
1.5 AGED Activities............................................................................................................................................7
1.5.1 Special Technology Area Reviews........................................................................................................7
1.5.2 TARA Involvement...............................................................................................................................8
1.5.3 Interaction with TPED..........................................................................................................................8
1.5.4 AGED Meetings Held...........................................................................................................................8
1.5.5 Coordination Activities.........................................................................................................................9
2. SIGNIFICANT ACHIEVEMENTS...................................................................................11
2.1 RF Components...........................................................................................................................................11
2.1.1 The Microwave and Analog Front End Technology (MAFET) Program............................................11
2.1.2 High Power Millimeter-Wave Vacuum Electronics............................................................................13
2.1.3 Millimeter Microwave Power Module (MMPM)................................................................................14
2.1.4 Advanced Antennas for Space Communications, Target Detection and Tracking..............................14
2.1.5 Frequency Control Devices.................................................................................................................16
2.2 Microelectronics..........................................................................................................................................18
2.2.1 Digital Receivers and Analog-to-Digital Converters..........................................................................18
2.2.2 Radiation Hardened Electronics..........................................................................................................21
2.2.3 Micro-Electro-Mechanical-Systems (MEMS)....................................................................................23
2.2.4 Sonoelectronics...................................................................................................................................26
2.2.5 High Power Solid State Electronics....................................................................................................27
2.2.6 Advanced Microelectronics.................................................................................................................29
2.3 Electro-Optics.............................................................................................................................................29
2.3.1 Laser Technology................................................................................................................................29
2.3.2 Focal Plane Arrays..............................................................................................................................30
2.3.3 Display Components...........................................................................................................................32
2.3.4 Photonics/Fiber Optics........................................................................................................................35
2.4 Electronics Materials..................................................................................................................................37
2.5 Electronics Integration Technologies........................................................................................................38
2.5.1 Packaging Technology........................................................................................................................39
2.5.2 Integrated Design................................................................................................................................40
2.5.3 Energy Storage and Generation...........................................................................................................40
2.5.4 Power Control and Distribution..........................................................................................................41
2.6 Significant electron device and electronics technology developments within the past year.................41
3. SPECIAL TECHNOLOGY AREA REVIEWS (STARS)...............................................49
3.1 Commercial Off-The Shelf Electronic Components (COTS)..................................................................49
3.2 Frequency Control Devices........................................................................................................................50
3.3 Micro-Opto-Electro-Mechanical Systems (MOEMS).............................................................................51
3.4 Infrared Countermeasure (IRCM) Lasers...............................................................................................51
APPENDIX A: FUNDING CATEGORY DEFINITIONS......................................................55
APPENDIX B: AGED RESPONSIBILITIES..........................................................................57
APPENDIX C: PRINCIPAL AGED MEMBERS....................................................................59
Executive Director....................................................................................................................................................59
Main Group...............................................................................................................................................................59
Working Group A.....................................................................................................................................................59
Working Group B.....................................................................................................................................................60
Working Group C.....................................................................................................................................................60
APPENDIX D: KEY CAPABILITIES AND REQUIREMENTS..........................................61
Tables and Figures
TABLE 1. TOOLS AND TECHNOLOGY OF MODERN DEFENSE.........................................................................................6
FIGURE 1. ELECTRONICS S&T FUNDING FY97-FY00..................................................................................................2
FIGURE 2. FY99 FUNDING BY SUBAREA AND ORGANIZATION......................................................................................4
FIGURE 3. MAFET THRUST 1 GOALS VERSUS ACCOMPLISHMENTS...........................................................................12
FIGURE 4. GAAS AND INP MMICS DEVELOPED UNDER MAFET...............................................................................12
FIGURE 5. SIC MESFET POWER AMPLIFIERS............................................................................................................13
FIGURE 6. WARLOC GYRO-KLYSTRON....................................................................................................................13
FIGURE 7. MMPM PROGRAM CONCEPT.....................................................................................................................14
FIGURE 8. ADVANCED ANTENNAS FOR SPACE COMMUNICATIONS, TARGET DETECTION AND TRACKING.................15
FIGURE 9. LANGATATE BOULE DEVELOPED AT CRYSTAL PHOTONICS INC. BY ARL/CECOM FOR ACCELERATION-
INSENSITIVE CLOCKS.........................................................................................................................................16
FIGURE 10. LANGASITE MEASURED Q X F VALUES...................................................................................................16
FIGURE 11. OVERHANG DISTANCE VERSUS VIBRATION SENSITIVITY.........................................................................17
FIGURE 12. NEW CANTILEVER DESIGN FOR QUARTZ RESONATORS...........................................................................17
FIGURE 13. NEXT GENERATION BROADBAND DIGITAL RECEIVER.............................................................................19
FIGURE 14. ACHIEVED ANALOG-TO-DIGITAL CONVERTER RESULTS AND GOALS......................................................19
FIGURE 15. RAYTHEON 16-BIT, 100 MHZ ADC DESIGN............................................................................................20
FIGURE 16. LOCKHEED MARTIN 16-BIT, 100 MHZ ADC DESIGN..............................................................................20
FIGURE 17. COTS CAPABILITIES VERSUS MILITARY REQUIREMENTS........................................................................21
FIGURE 18. CURRENT DOD HIGH-DENSITY RADIATION RESISTANT MICROELECTRONICS PROGRAMS......................22
FIGURE 19. DOD CUSTOMER REQUIREMENTS FOR RADIATION HARDENED MICROELECTRONICS (PRESENTED AT
1999 TARA)......................................................................................................................................................22
FIGURE 20. MEMS PROGRAM THRUSTS....................................................................................................................23
FIGURE 21. RECENT MEMS ACCOMPLISHMENTS.......................................................................................................23
FIGURE 22. MEMS-BASED ELECTRO-THERMAL-CHEMICAL POWER SYSTEMS..........................................................24
FIGURE 23. MEMS-BASED MICRO AIRBORNE SENSOR/COMMUNICATOR..................................................................25
FIGURE 24. POTENTIAL APPLICATIONS FOR MEMS ACTUATORS AND SENSORS........................................................25
FIGURE 25. LOCKHEED MARTIN SONOCAM...............................................................................................................26
FIGURE 26. BOSTON UNIVERSITY MEMS HYDROPHONE...........................................................................................27
FIGURE 27. POTENTIAL APPLICATIONS FOR WIDE BANDGAP, HIGH POWER SOLID STATE ELECTRONICS..................28
FIGURE 28. SIC CRYSTAL DEFECTS............................................................................................................................28
FIGURE 29. DARPA'S 3-D INTEGRATION PROGRAM..................................................................................................29
FIGURE 30. UNCOOLED IR TECHNOLOGY...................................................................................................................31
FIGURE 31. COLOR IRFPA ENHANCEMENT AND EXPLOITATION................................................................................31
FIGURE 32. THIRD GENERATION IRFPA TECHNOLOGY GOALS..................................................................................32
FIGURE 33. PROGRESS IN FLAT PANEL DISPLAYS.......................................................................................................33
FIGURE 34. FLAT PANEL DISPLAY DEMONSTRATION AND TEST.................................................................................33
FIGURE 35. HEAD TRACKED VISION SYSTEMS...........................................................................................................34
FIGURE 36. HIGH-BRIGHTNESS EMISSIVE FLAT PANEL DISPLAY...............................................................................34
FIGURE 37. AFRL'S OPTICAL ROUTER.......................................................................................................................35
FIGURE 38. JPL'S OPTO-ELECTRONIC OSCILLATOR....................................................................................................36
FIGURE 39. DEVELOPMENTAL SEMICONDUCTOR PHOTONIC ADC FLASH ARCHITECTURE........................................36
FIGURE 40. PROGRESS IN SILICON CARBIDE MATERIAL GROWTH..............................................................................37
FIGURE 41. DISLOCATION-FREE GALLIUM NITRIDE FILMS.........................................................................................38
FIGURE 42. CHIPSEAL PACKAGING TECHNOLOGY......................................................................................................39
FIGURE 43. SPACE INSERTION OF HIGH DENSITY INTERCONNECT TECHNOLOGY.......................................................39
FIGURE 44. COMPOSITE CAD INTEGRATED DESIGN TOOLS.......................................................................................40
FIGURE 45. LIGHTWEIGHT 50-W PEM FUEL CELL AIMED AT SUPPORTING THE INDIVIDUAL SOLDIER PORTABLE
POWER CONCEPT, DEVELOPED BY U.S. ARMY CECOM AND DARPA.............................................................40
FIGURE 46. TRENDS IN SHIPBOARD POWER SUPPLIES.................................................................................................41
1. Advisory Group on Electron Devices
1.1 The Goal of the DoD Electron Device Program
Numerous credible analyses have confirmed that the technological might of the United
States was directly responsible for the demise of the Soviet Union and the timely end of the Cold
War. Since that time, regional conflicts have repeatedly proven that the basic DoD objective
must remain unchanged:
To defend the nation and its interests against any adversary through the effective
employment and projection of military power, whenever and wherever needed.
We have met that objective in the past with a minimal number of personnel and weapon
systems by relying on our technological might and superior weapons to provide a “force
multiplication” advantage. Potent electronic and electro-optic technologies continue to power
the engine of innovation that creates our technological advantage and produces superior
weaponry.
The principal goal of the DoD Electron Device Science and Technology program is to
ensure a highly effective approach to maintain our current military advantage, defend against
technological surprise, and ensure our US military capability remains unmatched despite
continuing reductions in defense spending. The achievement of this goal is key to DoD’s
continued ability to ensure US fighting forces rapidly prevail over any adversary in any situation.
The charts in Figure 1 indicate the DoD investment by Services and other Government
agencies (e.g., DARPA, BMDO, etc.) in electron device related S&T programs during the years
FY97-FY00. Figure 2 shows the DoD S&T investment during FY99 grouped by subarea and
responsible DoD organization.
1.2 Mission and Functions of the Advisory Group on Electron Devices
The mission of the Advisory Group on Electron Devices (AGED) is to assist the DoD in
recommending and fostering implementation of an effective investment strategy for electron
device technology. The primary goal of this strategy is to ensure timely access to advanced
electronic processes, materials, and devices that will enable and enhance tomorrow’s
technologically-superior military systems. To achieve this goal, DDR&E, with the support of the
AGED, oversees the investment of limited DoD funding (usually of category 6.1, 6.2, or 6.3) to
support focused research and development of those electron device technologies that ensure that
the warfighter of tomorrow will dominate the battlefield. It is often possible to make use of
COTS electronics in DoD systems or to develop technologies that can be applied to both
commercial and military applications. These approaches allow substantial savings of recurring
costs to be realized. However, the AGED recognizes that it is also essential to invest in the
development of military-unique leading-edge technology developments that provide decisive
battlefield advantages over adversaries. (See Appendix A for definitions of 6.1, 6.2, and 6.3
funding from OMB Circular A-11, and Appendix B for a detailed description of AGED
responsibilities.)
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Electronics S&T Funding Comparison
FY1997-2000
FY 1997 FY 1998 FY 1999 FY 2000
64% 69% 67% 70%
$574,974 $536,019 $573,138 $533,579
Army $38,631 $23,826 $33,200 $31,496
Navy $45,762 $40,419 $51,314 $55,700
Air Force $80,580 $65,062 $48,269 $41,801
Services:$164,973 $129,307 $132,783 $128,997
DARPA $366,289 $367,462 $383,865 $372,111
BMDO $31,270 $28,050 $43,820 $21,201
DTRA $10,400 $5,800 $7,200 $5,800
MIT-LL $2,042 $5,400 $5,470 $5,470
DARPA BMDO DTRA MIT-LL
Army Navy Air Force
Figure 1. Electronics S&T Funding FY97-FY00
1.3 Organization and Focus of Activities
The AGED organization consists of a main group of senior managers selected
from Government, industry, and academia. It functions as a steering and oversight committee
for three sub-groups staffed by technical experts who are also drawn from Government, industry,
and academia. The first of these subgroups, designated as Working Group A, focuses on
microwaves and RF technology; the second, designated as Working Group B, focuses on
microelectronics; and the third, designated as Working Group C, focuses on electro-optics. The
AGED’s Chairperson is Dr. Thomas Hartwick and its Executive Director is Dr. Susan Turnbach.
Working Group A is chaired by Dr. Charles Krumm; Working Group B by Dr. Conilee
Kirkpatrick; and Working Group C by Dr. Andrew Yang. (Employment affiliations and
positions of these individuals are listed in Appendix C.) The AGED reports to the Director,
Defense Research and Engineering.
AGED is sponsored by the Army, Navy and Air Force; NASA is an official co-sponsor.
All of the armed services, as well as many other Government agencies, participate in AGED
meetings and activities. This assures joint planning and coordination of projects and judicious
expenditure of DoD resources. This is in concert with the DoD Project Reliance; Reliance
Taxonomy is used as an outline for this report. AGED membership is comprised of the “best and
brightest” of senior management from industry, academia, and defense organizations. Many
members are Fellows of the Institute of Electrical and Electronics Engineers (IEEE) or similar
2
organizations and all have been accorded recognition by their peers for outstanding contributions
to their profession. Members include both individuals who have served for a number of years
and those who are recent additions. The diversity of experience and varied tenure of the AGED
membership leads to balanced and tempered viewpoints about issues in the fields-of-interest of
its three working groups and with respect to differing military-academic-industrial perspectives.
Potential members are identified for their vision and talent for strategic thinking—the ability to
analyze and understand contemporary practices and requirements, combined with an intimate
familiarity with emerging technologies and revolutionary developments is crucial to AGED’s
ability to support DDR&E in charting the most effective approach to Electron Device S&T. This
cadre of subject matter experts which includes both active researchers in leading-edge electronic
technologies and influential leaders provides critical knowledge and insight to DDR&E
regarding the DoD Electron Devices S&T program (the principal members of each Group are
identified in Appendix C).
The focus of AGED activities is to observe trends and developments both within and
outside of DoD to ensure optimal exploitation of DoD capabilities and externally developed
advancements to advance the goals of the DoD Electronics S&T program. It is the responsibility
of the DoD Electron Devices S&T program to anticipate and satisfy the technological needs of
US weapon systems by providing superior processes and products at an affordable cost. The
program must develop and implement a sound strategy that assures an effective transition of
R&D activities from promising 6.1 projects, through 6.2 and 6.3 efforts into key processes and
products for DoD systems. With the ever increasing importance of electron devices for modern
weapon systems, due diligence has been and continues to be given to reducing the cost of
defense electronics.
1.3.1 Broad Industry Trends
A number of trends impacting the availability and utilization of standard military
electronic components, and the continued importance of military-unique electronic components
for DoD systems have emerged. These trends have come about primarily as a result of the
relative reduction of the military market (compared to commercial) and with the steadily
declining DoD investment in research and development of military-specific electronic
components. In this regard, AGED has observed the following dual trends:
COTS Components and Infrastructure
DoD now has very limited influence on the electronics component industry since the
dollar value of military electronics components sales is < 1% of total sales. Without direct DoD
financial support, it is highly unlikely that commercial suppliers will develop military unique
components or customize existing commercial-off-the-shelf (COTS) components in order to
meet military performance specifications. Therefore, DoD is strongly tending towards a COTS
strategy consisting of:
• Maximizing the use of low cost COTS components where appropriate—“making do”
with commercially available parts, for which there is no serious system/mission
performance penalties for doing so. In addition, the DoD is hoping to provide an
advantage over its military adversaries by incorporating special architectures and features
at the system level, even with COTS component implementation.
• Utilizing standard commercial specifications for components and manufacturing line
certification.
3
Figure 2. FY99 Funding by Subarea and Organization
4