DTIC ADA246521: Defects in Semiconductors 16: Proceedings of the International Conference (16th) Held in Bethlehem, Pennsylvania on 22-26 July 1991. Part 3

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Materials Science Forum,
Volumes 83-87
Defects in Seiconductors 16(1
Proceedings of the 16th International Conference,
LeIh University, Pennsylvania, 1991
Pat 3
Gordon Davies, Gary G.D eLeo & Michael Stavola
AID.-hA2 46 !521 ln
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public iglease and $we it.
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92-03299
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Defects in Semiconductors 16
Part 3
.AUTHOR(S) DAAL03-91-G-0113
Gordon Davies, Gary G. DeLeso and Michael Stavola
7. PEKFORMING ORGANIZATION NAME(S) AND ADORESSRS) *. PERFORMING ORGANIZATION
REPORT NUMIER
Lahigh University
Bethlehem, PA 18015
.SPONSORINGI MONTOJNG AGENCY NAME(S) AND ADORESS4ES) 10. SPONSORING MONITORING
U. S. Army Research Office AGENCY REPORT NUMIER
P. 0. Box 12211
Research Trianle Park, NC 27709-2211 ARO 28661.3-EL-CF
11. SUPPEMENTARY NOTES
The viev, opinions and/or findings conta.ned in this report are those of the
author(s) and should not be construed as an official Department of the Ary
position, policy, or decision, unless so designated by other documentation.
"12m.D ISTIUBUTION/AVAPLAVAiJTY STATI[MINT 1liibb. DISTRUTON C'IOTDUEUil20
13. ABSTRACT (Mximum 2r00wove)
These proceedings document our understanding of the many topics of current interest
in the field of defects in semiconductors. Important advances are discussed inr oughly 20
invited papers. Over 200 contributed papers describe the breadth of the activity in the
field. Among the work presented are resolutions of long standing puzzles, numerous new
ideas on old and new problems, and presentations of work at the periphery of the field
that may warrant our future attention. Many of the experiments and ideas presented are
new and/or controversial and wiplead to continued activity and expansion of the field.
14. SUIJECT TERMS 15. NUMBER OF PAGIS
Semiconductor Defects, Semiconductors, ConferenceILAK
17. SECURIT CLASSIFATION IL SECURIT CLASSIIATHMILN 3 SECURIT CLASSIFIATION 2.LMTTO PASRC
OF REPORT OF THIS PAG OF ANIRACT
UNCLUSIZOZD UNCLSSIZR1D 11UWCLASSZIZED UL
NSN 71232 0Standrd Form 2 (R, 2.9)
Pte l &iAn"i iii . M I9, ,
Proceedings of the
16th International Conference
on
Defects in Semiconductors
1D
ICS 1
Proceedings of the
16th International Conference I~
on
Defects in Semiconductors
P3aArtc sion
-For
Justifiution
Availability Codes
ICDS 16
Dist Avail a: djr
Lehigh University, Bethlehem, Pennsylvania
22 26 July 1991
-
Edited by
Gordon Davies, Gar;, C. DeLeo and Michael Stavola
Trans Tech Publications
Switzerland -Germany -UK -USA P
This work was partially supported by U.S. Air Force Grant AFOSR-91-0217 issued
by the U.S. Air Force Oiice of Scientific Research.
This work was partially supported by the Department of The Army Grant DAAL03-
91-G-0113 issued by the Army Research Office. The views, opinions, and/or findings
contained in this report are those of the authors and should not be construed as an
official Department of the Army position, policy, or decision, unless so designated by
other documentation.
This work relates to Department of Navy Grants N00014-91-J-1761 and N00014-91-
J-1912 issued by the Office of Naval Research. The United Staes Goverament has
a royalty-free license throughout the world in all copyrightable material contained
herein.
Copyright @ 1992 Trans Tc h Publications Ltd
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CONTENTS 3
-PART
14. NEW TECHNIQUES
Atomic defect configurations identified by nuclear tech- 1081
niques
Th. Wichert (Invited Plenary Paper)
Combination of deep level transient spectroscopy and 1097
transmutation of radioactive impurities
M. Lang, G. Penal, M. Gebhard, N. Achtziger and M. Uhrmacher
Identification of band gap states in silicon by deep level 1103
transient spectroscopy on radioactive isotopes
J .W. Petersen and J. Nielsen
Microscopy of Prenkel pairs in semiconductors by nuclear 1109
techniques
R. Sielemann, H. Hiflein, M. Brifler and H. Metzner
Modern muon spin speciroscopic methods in semiconduc- 111s
tor physics
R.L. Lichti, C.D. Lamp, S.R. Kreitzman, R.P. Kiefi, J.W. Schnei-
der, Ch. Niedermayer, K. Chow, T. Pfiz, T.L. Estle, S.A. Dodds,
B. Hitti and R.C. DuVarney
Muon stopping sites in semiconductors fromn decay-posit- 1121
ron channeling
H. Simmier, P. Eschle, H. Keller, W. Kiindig, W. Odermatt, B.D.
Patte~rson, J.M. Savii, J.W. Schneider, B. Stiuble-Pfimpin, U.
Straumann and P. Tru6l
Polarized e-pectroscopy of complex luminescence centers 1127
S.S. Ostapenko and M.K. Sheinkman
ONP spectroscopy of defects in silicon 1135
N.T. Bagraev and I.S. Polovtsev
Nuclear spin polarization by optical pumping of nitrogen 1141
impurities in semiconductors
K. Murakami, K. iara and K. Masuda
On the analysis of digital DLTS data 1147
C.A.B. Ball and A.B. Conibear
A re-evaluation of electric-field enhanced emission ine&- 1153
surem.-its for use in type and charge state determination
of point defects
W.R. Buchwald, H.G. Grimmeiss, F.C. Rohg, N.M. Johnson, E.H.
Poindexter and H. Pettersson
X-ray spectroscopy following neutron irradiation of scm;- 1159
conductor silicon
A.J. Filo, A. Meyer, 0.C. Swanon and J.P. Lavine
Spin dependent recombination at deep centers in S-i - 1165
electrically detected magnetic resonance
P. Christmann, M. Bernauer, C. We.tzel, A. Asenov, B.K. Meyer
and A. Endr~s
Excited deez~t energy states from temperature dependent 1171
ESR
C. Kisielowaki, K. Maier, J. Schneider and V. Oding
Dislocation associated defects in gallium arsenaide by scan- 1177
nling tunneling microscopy
0. Siboulet, S. Gauthier, J.C. Girard, W. Sacks, S. Rousset and
J. Klein
15. DEFECTS IN SiC AND DIAMOND
Transition metals in silicon carbide (SiC) : vanadium 1183
and titanium
K. Maier, H.D. Mfiller and J. Schneider (Invited)
Photoluminescence excitation spectroscopy of cubic SiC 1195
grown by chemical vapor deposition on Si substrates
J.A. Freitas, P.B. Klein and S.G. Bishop
Paramagnetic defects in SiC based materials 1201
0. Chauvet, L. Zuppiroli, J. Ardonceau, 1. Solomon, Y.C. Wang
and R.F. Davis
Acceptors in silicon car1hide : ODMR data 1207
P.G. Baranov and N.G. Romenov
Luminescence and absorption of vanadium (V44-) in 6H 1213
silicon carbide
A. D5rnen, Y. Latushko, W. Suttrop, G. Penal, S. Leibenzeder
and R. Stein
Impurity-defect reactions in ion-implanted diamond 1219
A.A. Gippius
18. DEF ECTS IN Il-VI SEMICONDUCTORS
Nativ-, d.efect compensation in wide-band-gap semicon- 1225
ductor,
D.B. Laks, 0.0. Van de Walle, G.F. Ntinark sod S.T. Pantelides
(Invited)
ODMR investigations of the A-centres, in CdTe 1235
D.M. Hofmnann, P. Orning, H.G. Griznieiss, D. Sinerius, K.W.
Benz and B.K. Meyer
Picosecond energy transfer between excitons and defects 1241
in 11-VI semiconductors
R. Heit?,, C. Fricke, A. H~offmaunn, and 1. Broser
Luminescence of a Sd-centre in ZnS 1247
R. Heitz, P. Thurian, A. Hof~,ann and 1. Broser
Interstitial defects in 11-VI semiconductors: role of the 1253
cation d states
J.T. Schick, C.G. Morgan-Pond and J.1. Landman
PAC study of the acceptor Li in 11-VIt semiconductors 1259
H. Wolf, Th. Krings, U. Ott, U. Hornauer and Th. Wichert
Generation of mnetastable shallow donors under cooling 1265
in hexagonal 11-VIt semiconductors
N.E. Korsunskaya, INV. Markevich, E.P. Shulga, I.A. Drozdova
and M.K. Sheinkman
17. HETERO-EPITAXY AND STRAINED LAYERS
Strain relief in thin films : can we control it? 1271
F.K. LeGoues (Invited)
Composition modulation effects on the generation of de- 1285
fects in In.. Ga. #As strained layers
54 4
F. Peir6, A. Cornet, A. Herms, J.RI. Morante, S. Clark and Hl.
Williams
Electron-trapping defects in MBE-grown relaxed n-In. - 1291
0
Ga0.gsAs on gallium arsenide
A.C. Irvine, L.K. Howard and D.W. i~almer
Atomic ordering in (110)InGaAs and its influence on elec- 1297
tron mobility
0. Ueda and Y. Nakata
Dopant diffusion in Sio.-Geo, 1303
7 5
D. Mathiot and J.C. Dupuy
18. DISLOCATIONS
Characterisathn of dislocations in the presence of tran- 1309
sition metal contamination
V. Higgs, B.C. Lightowlers, C.E. Norman and P. Kightley
Correlation of the D-band photoluminescence with spa- 1315
tial properties of dislocations in silicon
K. Weronek, J. Weber, A. H~pner, F. Ernst, R. Buchner, M. Ste-
faniak and H. Alexander
Photoluminescence and electronic structure of disloca- 1321
tions in Si crystals
Yu. Lelikov, Yu. Rebane, S. Ruviniov, D). Tarhin, A. Sitnikova
and Yu. Shreter
Characterisation of point defects ini Si crystals by highly 1327
spatially resolved photoluminescence
M. Tajima, H. Takeno and T. Abe
Theoretical study on the structure and properties of dis- 1333
locations in semiconductors
K. Masud#L-Jindo
19. SUPERLATTICES
Solid state processes at the atomic level 1339
A. Ourmazd, F.H. Baumann, M. Bode, Y. Kim and J.A.
Rentschler (Invited)
Theory of Zn-enhanced disordering in GaAs/AlAs su- 1351
perlattices
Q.-M. Zhang, C. Wang and J. Bernholc
Spatial partition of photocarriers trapped at deep level 1357
defects in multiple quantum well structures
D.D. Nolte, R.M. Brubaker, Q.N. Wang and M.R. Melloch
Picosecond dynamics of exciton capture, emission and 1363
recombination at shallow impurities in center-doped
AIGaAs/GaAs quantum wells
C.I. Harris, H. Kalt, B. Monemar, P.O. Holtz, J.P. Bergman, M.
Sundaram, J.L. Merz and A.C. Gossard
Spectroscopy of shallow donor impurities in GaAs/GaAIAs 1369
multi-quantum wells
J.L. Dunn, E. Pearl and C.A. Bates
Excitons bound at shallow impurities in GaAs/AIGaAs 1375
quantum :clls with varying doping levels
P.O. Holtz, B. Monemar, M. Sundaram, J.L. Mers, A.C. Gossard,
C.I. Harris and H. Kalt
20. DEFECTS AT SURFACES AND INTERFACES AND IN
LOW-DIMENSIONAL STRUCTURES
Scanning tunneling microscopy studies of semiconductor 1381
surface defects
J.E. Demuth (Invited)
The atomic and electronic structure of ordered buried 1391
B(2xl) layers in Si(100)
M. Needels, M.S. Hybertsen and M. Schluter
Negative U systems at semiconductor surfaces 1397
G. Allan and M. Lannoo
Ab initio calculations on effect of Ga-S bonds on passiva- 1403
tion of GaAs surface - a proposal for new surface treat-
ment
T. Ohno and K. Wada
Two-dimensionally localised vibrational mode due to Al 1409
atoms substituting for Ga one-monolayer in GaAs
H. Ono and T. Baba
0 surrounding of Pb defects at the (111) Si/SiO inter- 1415
2
face
A. Stesmans