Distributed CMOS Bidirectional Amplifiers

157 Pages·2012·4.64 MB·English

Distributed CMOS Bidirectional Amplifiers
ANALOGCIRCUITSANDSIGNALPROCESSING
SeriesEditors:
MohammedIsmail,TheOhioStateUniversity
MohamadSawan,E´colePolytechniquedeMontre´al
Forfurthervolumes:
http://www.springer.com/series/7381
Ziad El-Khatib • Leonard MacEachern
Samy A. Mahmoud
Distributed CMOS
Bidirectional Amplifiers
Broadbanding and Linearization Techniques
123
ZiadEl-Khatib LeonardMacEachern
DepartmentofElectronics DepartmentofElectronics
CarletonUniversity CarletonUniversity
1125ColonelByDrive 1125ColonelByDrive
Ottawa,ON Ottawa,ON
Canada Canada
SamyA.Mahmoud
DepartmentofSystems
andComputerEngineering
CarletonUniversity
1125ColonelByDrive
Ottawa,ON
Canada
ISBN978-1-4614-0271-8 e-ISBN978-1-4614-0272-5(ebook)
DOI10.1007/978-1-4614-0272-5
SpringerNewYorkHeidelbergDordrechtLondon
LibraryofCongressControlNumber:2012935516
©SpringerScience+BusinessMediaNewYork2012
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Preface
ActiveMOSFETdevicescanbemodeledbynonlinearcurrentandchargesources
thatdependonthe devicevoltages.Thesenonlinearsourcesgiverise todistortion
when driven with a modulated signal. When the input signal driven into the
amplifier semiconductor is increased, the output is also increased until a point
wheredistortionproductscannolongerbeignored.Theharmonicsandhigherorder
distortionoftheoutputsignalaregeneratedbynonlinearitiesofMOSFETdevices.
A highly-linear optical transmitter with fully-integrated broadband design lin-
earization capability is requiredto address linearity improvements.In response to
theneedtocorrectthebroadbanddistributedamplifier(DA)’snonlineardistortion,
a number of DA linearization techniqueshave been developed.However, most of
the published DA linearization methods reported do not provide fully-integrated
distortion cancellation techniques with large third-order intermodulation (IM3)
distortionreduction.
In this book, we demonstrate a fully-integrated fully-differential linearized
CMOS distributed bidirectional amplifier that achieves large IMD3 distortion
reduction over broadband frequency range for both RF paths. The proposed
linearized bidirectional DA has the drain and gate transmission-lines stagger-
compensated.ReducingtheDA IM3distortionbymismatchingthegateanddrain
LC delay-line ladders. The proposed fully-differential linearized DA employs a
cross-coupled compensator transconductor to enhance the linearity of the DA
gain cell with a nonlinear drain capacitance compensator for wider linearization
bandwidth.TheproposedlinearizedCMOSbidirectionalDA achievesameasured
IM3distortionreductionof20dBwithfrequencyofoperationfrom0.1to9.5GHz
andatwo-wayamplificationof5dBinbothRFdirections.Theproposedlinearized
DA is implemented in 0.13(cid:2)m RF CMOS process for use in highly-linear UWB
communications.
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Acknowledgements
I would like to express my sincere gratitude to my dear co-authors and advisors
Dr.SamyA.Mahmoud,ProfessorattheFacultyofSystemsEngineeringandDesign
at Carleton University and Dr. Leonard MacEachern Professor at Electronics and
ElectricalEngineeringatCarletonUniversityfortheircontinuoussupport,guidance,
encouragement and involvement during the course of this book. Their help and
supportisgreatlyappreciated.
I am in debt to all who provided support. Financial support was provided by
Carleton University in the form of a research assistantship and in the form of a
graduatescholarship,andbytheNationalCapitalInstituteofTelecommunications
(NCIT) and Centre for Photonics Fabrication Research (CPFR) in the form of
a research grant is gratefully acknowledged. I would like to thank the Canadian
MicroelectronicsCorporation(CMC)staffforbothCadencetechnicalsupportand
fabricationsilicon space. I would like to thank IBM CorporationMOSIS for chip
fabrication and Agilent staff for their ADS design environment tools and test
equipmentsupporttomeasurethechipperformance.
I wish to thank my dear mother, my sisters and brothers for their continuous
prayers, encouragementand support during the course of this book, they all have
stoodbyme.
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