Disordered Materials: Science and Technology PDF
Preview Disordered Materials: Science and Technology
Disordered Materials Science and Technology Institute for Amorphous Studies Series Series editors David Adlert Massachusetts Institute of Technology Cambridge, Massachusetts and Brian B. Schwartz Institute for Amorphous Studies Bloomfield Hills, Michigan and Brooklyn CoJlege of the City University of New York Brooklyn, New York DISORDER AND ORDER IN THE SOLID STATE Concepts and Devices Edited by Roger W. Pryor, Brian B. Schwartz, and Stanford R. Ovshinsky DISORDERED MATERIALS Science and Technology Selected papers by Stanford R. Ovshinsky Edited by David Adler, Brian B. Schwartz, and Marvin Silver DISORDERED SEMICONDUCTORS Edited by Marc A. Kastner, Gordon A. Thomas, and Stanford R. Ovshinsky LOCALIZATION AND METAL-INSULATOR TRANSITIONS Edited by Hellmut Fritzsche and David Adler PHYSICAL PROPERTIES OF AMORPHOUS MATERIALS Edited by David Adler, Brian B. Schwartz, and Martin C. Steele PHYSICS OF DISORDERED MATERIALS Edited by David Adler, Hellmut Fritzsche, and Stanford R. Ovshinsky TETRAHEDRALLY-BONDED AMORPHOUS SEMICONDUCTORS Edited by David Adler and Hellmut Fritzsche UNCONVENTIONAL PHOTOACTIVE SOLIDS Edited by Harvey Scher tDeceased A Continuation Order Plan is available for this series. A continuation order will bring delivery of each new volume immediately upon publication. Volumes are billed only upon actual shipment. For further information please contact the publisher. Disordered Materials Science and Technology Selected papers by Stanford R. Ovshinsky Edited by David Adler Late of Massachusetts Institute of Technology Cambridge, Massachusetts Brian B. Schwartz Institute for Amorphous Studies Bloomfield Hills, Michigan and Brooklyn College of the City University of New York Brooklyn, New York and Marvin Silver University of North Carolina Chapel Hill, North Carolina Plenum Press • New York and London L1brary of Congress Catalog1ng-1n-PubI1cat1on Data Ovshlnsky, Stanford R. Disordered materlals science and technology selected papers I by Stanford R. Dvshlnsky ; edited by Davld Adler, Brlan B. Schwartz, and Marvin SlIver. p. cm. -- (Instltute for Amorphous Studles serles) Papers written or co-authored by Ovshinsky between 1968 and 1988. Includes blbl10graphlcal references. 1. Drder-disoroer models--Congresses. 2. Amorphous semiconducl0rs--Congresses. 3. Amorphous substances--Congresses. I. Adler, Davld, 1935-1987. II. Schwartz, Brian B., 1938- III. SlIver, M. (MarVlnJ, 1924- IV. T1tle. V. Series. QC173. 4. 073097 1991 53C.~·2--cc2l 89-28735 CIP ISBN 978-1-4684-8747-3 ISBN 978-1-4684-8745-9 (eBook) DOl 10.1 007/978-1-4684-8745-9 © 1991 Plenum Press, New York Softcover reprint of the hardcover I st edition 1991 A Division of Plenum Publishing Corporation 233 Spring Street, New York, N.Y. 10013 All rights reserved No part of this book may be reproduced, stored in a retrieval system, or transmitted in any form or by any means, electronic, mechanical, photocopying, microfilming, recording, or otherwise, without written permission from the Publisher To Stanford R. Ovshinsky in honor of his pioneering contributions to the science and technology of Disordered Materials and his continued interest in serving humanity and his many friendships EDITORIAL COMMENT The production of this book is the result of an extraordinary and close relationship between two exceptional scientists, Stanford R. Ovshinsky and David Adler. As colleagues who know both of them, we were always in awe of the symbiotic relationship of the two scientists. They cared about each other and worked with each other in a loving and interdependent style. Their enthusiasm for the subject matter and their willingness to present bold and sometimes controversial subjects added to the strength of this relationship. Unfortunately, David Adler died suddenly in late March 1987, just before his 53rd birthday. The scientific community was shocked by the loss, and we, his friends and colleagues, will always miss his wisdom, humor, and grace. At the time of Dave's death, we were working on this volume of selected papers by Stan Ovshinsky. We decided to leave much of the introduc tion as written by Dave, only adding some comments to update it and to include the most recent papers of Stan Ovshinsky on the occasion of his 65th birthday. This book is dedicated to the memory of David Adler and represents a celebration of the exceptional relationship between Stan and Dave. We'd very much like to thank Ms. Ghazaleh Koefod for her continuous administrative assistance and loyalty to both Stan Ovshinsky and Dave Adler. Ghazaleh's commitment and skills have been key to the comple tion of this book in a timely and accurate fashion. --Brian B. Schwartz, New York -Marvin Silver, North Carolina CONTENTS I NTRODUCTI ON .•....•............•....................................•.....•......... David Adler PART I: CHEMISTRY AND PHYSICS OF DISORDERED MATERIALS 1. Reversible Electrical Switching Phenomena in Disordered Structures............. 11 S.R. Ovshinsky Physical Review Letters, Vol. 21, No. 20, November 11, 1968, 1450-1453. 2. Simple Band Model for Amorphous Semiconducting Alloys.......................... 14 M.H. Cohen, H. Fritzsche and S.R. Ovshinsky Physical Review Letters, Vol. 22, No. 20, May 19, 1969, 1065-1068. 3. Reversible Conductivity Transformations in Chalcogenide Alloy Films............ 17 E.J. Evans, J.H. Helbers and S.R. Ovshinsky Journal of Non-Crystalline Solids, Vol. 2, January 1970, 334-346. 4. Structural Studies of Amorphous Semiconductors................................. 23 A. Bienenstock, F. Betts and S.R. Ovshinsky Journal of Non-Crystalline Solids, Vol. 2, January 1970, 347-357. 5. Reflectivity Studies of the Te(Ge,As)-based Amorphous Semiconductor in the Conducting and Insulating States..................................... 27 J. Feinleib and S.R. Ovshinsky Journal of Non-Crystalline Solids, Vol. 4, April 1970, 564-572. 6. Analog Models for Information Storage and Transmission in Physiological Systems .......•.••....•.........•••.••.•..••...........•...... 30 S.R. Ovshinsky and I.M. Ovshinsky Materials Research Bulletin, Vol. 5, 1970, 681-690 (Mott Festschrift). 7. Rapid Reversible Light-Induced Crystallization of Amorphous Semi conductors. . . . • . . . . . . • •. . . . . • •. .. . . . • . . • • . . . . . . . . . • . . . . . . . . • . . •. • • . . • . . • 34 J. Feinleib, J. deNeufville, C. Moss and S.R. Ovshinsky Applied Physics Letters, Vol. 18, No.6, March 15, 1971, 254-257. 8. Three Dimensional Model of Structure and Electronic Properties of Chalcogenide Glasses........................................................ 38 S.R. Ovshinsky and K. Sapru Proceedings of the Fifth International Amorphous and Liquid Semiconductors Conference, Garmisch-Partenkirchen, Germany, J. Stuke and W. Brenig, eds., 1974, 447-452. 9. Localized States in the Gap of Amorphous Semiconductors........................ 41 S.R. Ovshinsky Physical Review Letters, Vol. 36, No. 24, June 14, 1976, 1469-1472. vii 10. Lone-Pair Relationships and the Origin of Excited States in Amorphous Chalcogenides ..........•.••...•.•.•••.•....•.•.••.•..•.•.•••.•• ·•• 45 S.R. Ovshinsky Proceedings of the International Topical Conference on Structure and Excitation of Amorphous Solids, Williamsburg, Virginia, March 24-27, 1976, 31-36. 11. Chemical Mod ifi cat i on of Amorphous Cha 1c ogeni des. •• •. •. . • • • • • • • . . . . . • . . . . . • . . . . 48 S.R. Ovshinsky Proceedings of the Seventh International Conference on Amorphous and Liquid Semi conductors, Edinburgh, Scotland, June 27- July 1, 1977, 519-523. 12. Optical and Electronic Properties of Modified Amorphous Materials.............. 51 R. Flasck, M. Izu, K. Sapru, T. Anderson, S.R. Ovshinsky and H. Fritzsche Proceedings of the Seventh International Conference on Amorphous and Liquid Semi conductors, Edinburgh, Scotland, June 27- July 1, 1977, 524-528. 13. Local Structure, Bonding, and Electronic Properties of Covalent Amorphous Semiconductors.................................................... 54 S.R. Ovshinsky and D. Adler Contemporary Physics, Vol. 19, No.2, 1978, 109-126. 14. A New Amorphous Silicon-Based Alloy for Electronic Applications................ 64 S.R. Ovshinsky and A. Madan Nature, Vol. 276, No. 5687, November 30, 1978, 482-484. 15. Threshold Switching in Chalcogenide Glass Thin Films........................... 66 D. Adler, M.S. Shur, M. Silver and S.R. Ovshinsky Journal of Applied Physics, Vol. 51, No.6, June 1980, 3289-3309. 16. Properties of Amorphous Si:F:H Alloys.......................................... 88 A. Madan and S.R. Ovshinsky Journal of Non-Crystalline Solids, Vols. 35 and 36,1980,171-181. 17. Electroreflectance and Raman Scattering Investigation of Glow- Discharge Amorphous Si:F:H.................................................. 94 R. Tsu, M. Izu, S.R. Ovshinsky and F.H. Pollak Solid State Communications, Vol. 36, 1980,817-822. 18. The Nature of Intermediate Range Order in Si:F:H(P) Alloy Systems.............. 99 R. Tsu, S.S. Chao, M. Izu, S.R. Ovshinsky, G.J. Jan and F.H. Pollak Journa 1 de Phys i que, Co 11 oque C4, supplement 10, October 1981, C4-269-272. 19. Correlation Between the Superconducting and Normal State Properties of Amorphous Molybdenum-Silicon Alloys •.•.•.•........•...••.••••••....•..... 102 A.S. Edelstein, S.R. Ovshinsky, H. Sadate-Akhavi and J. Wood Solid State Communications, Vol. 41, No.2, 1982, 139-142. 20. Superconducting Properties of Amorphous Multilayer Metal- Semi conductor Compos i tes. • • • •• • • . • • • • • . . • . • . • • . • • . • .•• . . . • • • . . • . • . . . • . •• • . • • 106 A.M. Kadin, R.W. Burkhardt, J.T. Chen, J.E. Keem and S.R. Ovshinsky Layered Structures Epitaxy and Interfaces, J.M. Glbson and L.R. Dawson, eds. (Vol. 37 of Materials Research Society Symposia Proceedings), Pittsburgh, PA, 1985, 503-508. viii 21. Superconducting Properties of Sputtered Mo-C Films with Columnar Microstructure.............................................................. 110 J. Wood, J.E. Keem, J.T. Chen, A.M. Kadin, R.W. Burkhardt and S.R. Ovshinsky IEEE Transactions on Magnetics, Vol. MAG-21, No.2, March 1985, 842-845. 22. The Role of Free Radicals in the Formation of Amorphous Thin Films ..•.••••.•... 114 S.R. Ovshinsky Proceedings of the International Ion Engineering Congress-ISIAT'83 & IPAT'83, Kyoto, Japan, T. Takagi, ed., September 12-16, 1983, 817-828. 23. Laser-Induced Fluorescence Detection of Reactive Intermediates in Diffusion Flames and in Glow-Discharge Deposition Reactors.................. 120 H.U. Lee, J.P. deNeufvi11e and S.R. Ovshinsky Journal of Non-Crystalline Solids, Vo1s. 59 & 60, 1983, 671-674. 24. Order Parameters in a-Si Systems............................................... 122 R. Tsu, J. Gonzalez-Hernandez, J. Doeh1er and S.R. Ovshinsky Solid State Communications, Vol. 46, No.1, 1983, 79-82. 25. Passivation of Dangling Bonds in Amorphous Si and Ge by Gas Adsorpt i on. . . . . • • . • • . • . •• . . . . . . • . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . . . . . . . . . . 126 R. Tsu, D. Martin, J. Gonzalez-Hernandez and S.R. Ovshinsky Physical Review B, Vol. 35, No.5, February 15, 1987, 2385-2390. 26. Chemical Bond Approach to the Structures of Cha1cogenide Glasses with Reversible Switching Properties ........................................ 132 J. Bicerano and S.R. Ovshinsky Journal of Non-Crystalline Solids, Vol. 74, 1985, 75-84. 27. Critical Materials Parameters for the Development of Amorphous Silicon Alloys ••••.••..•.•••••.•...•.....•...••.••.•..••...........••..•.... 136 S.R. Ovshinsky and D. Adler Materials Research Society Symposium Proceedings, Vol. 49, 1985, 251-264. 28. Low Pressure Microwave Glow Discharge Process for High Deposition Rate Amorphous Silicon Alloy ••..•.........••••.••..••..••...••......•....•.• 144 S.J. Hudgens, A.G. Johncock and S.R. Ovshinsky Journal of Non-Crystalline Solids, Vo1s. 77 & 78, 1985, 809-812. 29. Basic Anticrysta11ine Chemical Bonding Configurations and Their Structural and Phys ica1 Imp1 i cat ions...... . ........ . . . . . . ... . . . ... .. . .. ... .. 147 S.R. Ovshinsky Journal of Non-Crystalline Solids, Vol. 75, 1985, 161-168. 30. Superconductivity at 155 K..................................................... 152 S.R. Ovshinsky, R.T. Young, D.D. Allred, G. DeMaggio, and G.A. Van der Leeden Physical Review Letters, Vol. 58, No. 24, 15 June 1987, 2579-2581. 31. Superconductivity in Fluorinated Copper Oxide Ceramics......................... 155 S.R. Ovshinsky, R.T. Young, B.S. Chao, G. Fournier and D.A. Pawlik Review of Solid State Science, Vol. 1, 1987, 207-219. 32. A Structural Chemical Model for High Tc Ceramic Superconductors 160 S.R. Ovshinsky, S.J. Hudgens, R.L. Li ntvedt and D.B. Rorabacher Modern Physics Letters B, Vol. 1,1987, 275-288. ix PART II: DEVICE APPLICATIONS 33. Reversible Structural Transformations in Amorphous Semiconductors for Memory and Log i c • . . • • . • . . . . • . • • • . • . . • • • • • . . • • • • . • . . • . . . . . . . . • • • • • . • • • • • • 169 S.R. Ovshinsky and H. Fritzsche Metallurgical Transactions, Vol. 2, March 1971, 641-645. 34. Radiation Hardness of Ovonic Devices........................................... 174 S.R. Ovshinsky, E.J. Evans, D.L. Nelson and H. Fritzsche IEEE Transactions on Nuclear Science, Vol. 15, 1968, 311-321. 35. Reversible High-Speed High-Resolution Imaging in Amorphous Semi conductors. • • . . . . • . •• • • • . • • . . . • . . . • . • • • . . . . . . . . . •. . . . . • . . . . . . . . • • • . . . . • • 184 S.R. Ovshinsky and P.H. Klose Society for Information Display, 1971 International Symposium, Digest of Technical Papers, May 1971, 58-61. 36. Reversible Optical Effects in Amorphous Semiconductors......................... 188 J. Feinleib, S. Iwasa, S.C. Moss, J.P. deNeufville and S.R. Ovshinsky Journal of Non-Crystalline Solids, Vols. 8-10, 1972, 909-916. 37. Imaging in Amorphous Materials by Structural Alteration .....••••••.••...••..•.• 192 S.R. Ovshinsky and P.H. Klose Journal of Non-Crystalline solids, Vols. 8-10,1972, 892-898. 38. New Thin-Film Tunnel Triode Using Amorphous Semiconductors..................... 195 R.F. Shaw, H. Fritzsche, M. Silver, P. Smejtek, S. Holmberg and S.R. Ovshinsky Applied Physics Letters, Vol. 20, No.7, April 1,1972,241-243. 39. Mechanism of Reversible Optical Storage in Evaporated Amorphous AsSe and Gel OAs40Se50 . . • • • . . • . . . • • • • • . . • • • . . • • . • . • • . . • . . . . . • . • . . . • . • . . . . . . . . 198 J.P. deNeufville, R. Seguin, S.C. Moss and S.R. Ovshinsky Proceedings of the Fifth International Amorphous and Liquid Semiconductor Con ference, Garmisch-Partenkirchen, Germany, J. Stuke and W. Brenig, eds., 1974, 737-743. 40. Solar Electricity Speeds Down to Earth ••..•..•..............••••....•...•.••••• 203 S.R. Ovshinsky New Scientist, Vol. 80, No. 1131, November 30, 1978, 674-677. 41. Amorphous Photovo lta i c Ce 11 s. . . . . • . . • • . . • • . . • • • • . • . • •. . .• • • . • • • • • . . • • • • . . . • • • • • 206 S.R. Ovshinsky and A. Madan Solar Energy Symposia of the 1978 Annual Meeting, Denver, Colorado, August 28-31, 1978, American Section of the International Solar Energy Society, 69-73. 42. Metal-Insulator-Semiconductor Solar Cells USing Amorphous Si:F:H Alloys. • • • . • • • • • • • • . • • • • • • • • . . • • • • • • . . . • • • • . • . . . • • . . . . • • • • • . . . . . • • . . • • • . • . • . 211 A. Madan, J. McGill, W. Czubatyj, J. Yang and S.R. Ovshinsky Applied Physics Letters, Vol. 37, No.9, November 1, 1980, 826-828. 43. Progress in Large Area Photovoltaic Devices Based on Amorphous Silicon Alloys •••...•••••.••••••••.••••••••...••••....•••.•••••.••..•.•••••. 214 J.P. deNeufville, M. Izu and S.R. Ovshinsky Proceedings of the 16th Intersociety Energy Conversion Engineering Confer ence, Atlanta, Georgia, August 9-14, Vol. 3,1981,2217-2220. x
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