Computational Electronics: Semiconductor Transport and Device Simulation

272 Pages·1991·8.608 MB·English

by  M. R. Pinto, W. M. Coughran Jr., C. S. Rafferty, R. K. Smith, E. Sangiorgi (auth.), K. Hess, J. P. Leburton, U. Ravaioli (eds.)

COMPUTATIONAL ELECTRONICS
THE KLUWER INTERNATIONAL SERIES
IN ENGINEERING AND COMPUTER SCIENCE
VLSI, COMPUTER ARCHITECTURE AND
DIGIT AL SIGNAL PROCESSING
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COMPUTATIONAL ELECTRONICS
Semiconductor Transport and Device Simulation
edited by
K. Hess
J .P. Leburton
U. RavaioU
Beckman Institute
University of Illinois
"~.
Springer-Science+Business Media, B.Y.
Library of Congress Cataloging-in-Publication Data
Computational electronics : semiconductor transport and device
simulation : proceedings of the workshop, Beckman Institute for
Advanced Sciences and Technology, University of Illinois at Urbana
-Champaign, May 21-23,1990 / edited by K. Hess, J.P. Leburton, U.
Ravaioli.
p. cm. - (The Kluwer international series in engineering and
computer science. VLSI, computer architecture, and digital signal
processing)
"National Center for Computational Electronics."
Proceedings of the Workshop on Computational Electronics held May
21-23, 1990, at the Beckman Institute for Advanced Sciences and
Technology.
Includes index.
ISBN 978-1-4419-5122-9 ISBN 978-1-4757-2124-9 (eBook)
DOI 10.1007/978-1-4757-2124-9
1. Semiconductors-Computer simulation-Congresses. 2. Integrated
circuits-Computer simulation-Congresses. I. Hess, Karl, 1945-
. II. Leburton, J. P. (Jean Pierre), 1949- . III. Ravaioli,
Umberto. IV. National Center for Computational Electronics (U.S.)
V. Workshop on Computational Electronics (1990 : Beckman Institute
for Advanced Sciences and Technology) VI. Series.
TK7871.85.C59 1991
621.381'52-dc20 90-46054
CIP
Copyright © 1991 by Springer Science+Business Media Dordrecht
Originally published by Kluwer Academic Publishers in 1991.
Softcover reprint of the hardcover 1s t edition 1991
All rights reserved. No part of this publication may be reproduced, stored in a retrieval
system or transmi tted in any form or by any means, mechanical, photo-copying, recording,
or otherwise, without the prior written permission of the publisher, Kluwer Academic
Publishers, 101 Philip Drive, Assinippi Park, Norwell, Massachusetts 02061.
Printed on acid-free paper.
TABLE OF CONfENTS
Program Committee .................................................................................. xi
Preface ....................................................................................................... xiii
- DRIFT-DIFFUSION SIMULATION
Device Simulation for Silicon ULSI..................................................... 3
M. R. Pinto, W. M. Coughran, Jr.,
C. S. Rafferty, R. K. Smith and E. Sangiorgi
Drift-Diffusion Systems: Variational Principles
and Fixed Point Maps for Steady State
Semiconductor Models... ........................... .............. ....... ............ ........... 15
J. W. Jerome
Drift-Diffusion Systems: Analysis of Discretized Models ................... 21
T. Kerkhoven
Simulation of a Steady-State Electron Shock Wave
in a Submicron Semiconductor Device Using
High-Order Upwind Methods ................................................................ 27
E. Fatemi, C. L. Gardner, J. W. Jerome, S. Osher
and D. J. Rose.
Adaptive Mesh Refinement for 2-D Numerical
Analysis of Semiconductor Devices ..................................................... 33
1. Son, T.-W. Tang and A. Eydeland.
Adaptive Grids for Semiconductor Modelling ..................................... 37
G. F. Carey, J. Schmidt and M. Sharma
A Numerical Large Signal Model for the
Heterojunction Bipolar Transistor ........................................................ 43
D. A. Teeter, J. R. East, R. K. Mains
and G. 1. Haddad.
The Program OSMOSIS: A Rigorous Numerical
Implementation of Augmented Drift-Diffusion
Equation for the Simulation of Velocity Overshoot ............................ 47
E. C. Kan, U. Ravaioli and T. Kerkhoven.
vi
A New Technique for Including Overshoot Phenomena
in Conventional Drift-Diffusion Simulators ......................................... 51
P. A. Blakey, X.-L. Wang, C. M. Maziar
and P. A. Sandborn
A Self-Consistent Calculation of Spatial Spreading
of the Quantum Well in HEMT ............................................................ 55
S.-H. Ng, R. Khoie and R. Venkat
A New Nonparabolic Hydrodynamic Model with Quantum
Corrections ............................................................................................. 59
D. L. Woolard, M. A. Stroscio, M. A. Littlejohn,
R. 1. Trew and H. L. Grubin
The Conditions of Device Simulation Using Full
Hydrodynamic Equations ....................................................................... 63
1. Zhou, A. M. Kriman and D. K. Ferry
- MONTE CARLO SIMULATION - BOLTZMANN EQUATION
Device Simulation Augmented by the
Monte Carlo Method.............................................................................. 69
M. A. Littlejohn, 1. L. Pelouard,
W. C. Koscielniak and D. L. Woolard
Ensemble Monte Carlo Simulation of Femtosecond
Laser Excitation in Semiconductors ...................................................... 75
D. K. Ferry, A. M. Kriman, M. 1. Kann,
H. Hida and S. Yamaguchi
Dynamics of Photoexcited Carriers in GaAs ........................................ 81
C. 1. Stanton and D. W. Bailey
The DAMOCLES Monte Carlo Device Simulation Program.............. 87
S. E. Laux and M. V. Fischetti
Iterative Spectral Solution of Boltzmann's
Equation for Semiconductor Devices.................................................... 93
B. H. Floyd and Y. L. Le Coz
Computer Experiments for High Electron Mobility
Transistors and Avalanching Devices.... ........ .......................... ............. 97
K. F. Brennan, Y. Wang, and D. H. Park
vii
Minority Electron Transport Across Submicron
Layers of GaAs and InP ....................................................................... .107
M. A. Osman and N. S. Dogan
Photoconductive Switch Simulation with
Absorbing Boundary Conditions .......................................................... 111
R. P. Joshi, K. M. Connolly,
S. EI-Ghazaly and R. O. Grondin
Simulation of Sub-Micron GaAs MESFETs for
Microwave Control ................................................................................ 115
S. A. Khan and R. J. Gutmann
Eigenvalue Solution to Steady-State Boltzmann Equation .................. 119
S. Krishnamurthy and M. van Schilfgaarde
Variable Threshold Heterostructure FET
Studied by Monte Carlo Simulation .................................................... .123
G. U. Jensen and M. Shur
A Study of the Relaxation-Time Model based
on the Monte Carlo Simulation ............................................................. 127
S.-C. Lee and T.-W. Tang
Field Assisted Impact Ionization in Semiconductors ........................... 131
J. Bude, K. Hess and G. J. Iafrate
Parallelization of Monte Carlo Algorithms
in Semiconductor Device Physics on Hypercube
Multiprocessors ...................................................................................... 137
U. A. Ranawake, P. Lenders and S. M. Goodnick
Comparative Numerical Simulations of a GaAs
Submicron FET Using the Moments of the Boltzmann
Transport and Monte Carlo Methods .................................................... 141
J. P. Kreskovsky, G. A. Andrews, B. J. Morrison
and H. L. Grubin
J-V Characteristics of Graded AlxGal_xAs
Heterojunction Barriers Using the Self
Consistent Ensemble Monte Carlo Method ......................................... .145
R. Kamoua, J. R. East and G. I. Haddad
viii
Monte Carlo Simulation of Lateral Surface
Superlattices in a Magnetic Field .......................................................... 149
T. Yamada, A. M. Kriman and D. K. Ferry
Quantum-Well Infrared Photodetectors:
Monte Carlo Simulations of Transport ................................................ 153
M. Artaki and I. C. Kizilyalli
Simulation of Non-Stationary Electron Transport
Using Scattering Matrices ..................................................................... 157
A. Das and M. S. Lundstrom
Rigid Pseudo-Ion Calculation of the Intervalley
Electron-Phonon Interaction in Silicon ................................................. 161
J. M. Higman
Numerical Study of High Field Transport in Si02
with Traps: A Coupled Monte Carlo and Rate
Equation Model ...................................................................................... 165
R. L. Kamocsai and W. Porod
Transient Monte Carlo Simulation of Heterojunction
Microwave Oscillators ........................................................................... 169
C. H. Lee and U. Ravaioli
Monte Carlo Simulations for Submicron InP Two-Terminal
Transferred Electron Devices ................................................................ 173
V. V. Mitin, M. P. Shaw, V. M. Ivastchenko and
K. F. Wu
Monte Carlo Simulation of Low-Dimensional
Nanostructures ........................................................................................ 177
D. Jovanovic, S. Briggs and J. P. Leburton
- QUANTUM TRANSPORT
Many-Body Effects and Density Functional Formalism
in Nanoelectronics ................................................................................. 183
G. J. Iafrate, J. B. Krieger and Y. Li
Modeling InAs/GaSb/AISb Interband Tunnel Structures ..................... 189
D. Z.-Y. Ting, E. T. Yu, D. A. Collins,
D. H. Chow, and T. C. McGill
ix
Quantum Kinetic Theory of Tunneling Devices .................................. 195
W. R. Frensley
Transport in Electron Waveguides: Filtering and
Bend Resistances .................................................................................... 20 1
H. U. Baranger
Numerical Methods for the Simulation of Quantum
Devices Using the Wigner Function Approach .................................... 207
C. Ringhofer
Density Matrix Coordinate Representation Numerical
Studies of Quantum Well and Barrier Devices .................................... 215
T. R. Govindan, H. L. Grubin and F. J. de Jong
A Distribution-Function Approach in the Many-Body
Quantum Transport Theory of Quantum-Based Devices ..................... 219
F. A. Buot and K. L. Jensen
The Generalized Scattering Matrix Approach: An
Efficient Technique for Modeling Quantum Transport
in Relatively Large and Heavily Doped Structures ............................ .223
S. Bandyopadhyay and M. Cahay
Quantum Ray Tracing: A New Approach to Quantum Transport
in Mesoscopic Systems .......................................................................... 227
V. Pevzner and K. Hess
On Transport in Heterostructures within the
Independent-Particle Picture .................................................................. 231
J. Zhang and W. Potz
Transient Response in Mesoscopic Devices ......................................... 235
L. F. Register, U. Ravaioli and K. Hess
The Inclusion of Scattering in the Simulation
of Quantum Well Devices ..................................................................... 239
K. L. Jensen and F. A. Buot
Numerical Study of Electronic States in a Quantum
Wire at Crossing Heterointerfaces ........................................................ 243
H. K. Harbury and W. Porod
x
Dissipative Quantum Transport in Electron Waveguides .................... 247
M. J. McLennan, Y. Lee, R. K. Lake, G. Neofotistos
and S. Datta
Exchange Energy Intemctions in Quantum Well
Heterostructures ......................................................................................2 51
A. H. Guerrero
Asymptotic Structure of the Density-Gradient
Theory of Quantum Transport ............................................................... 255
M. G. Ancona
Calculation of Tmnsport Through Ballistic Quantum
Structures ................................................................................................ 259
C. S. Lent
Numerical Study of the Higher Order Moments of
Conductance Fluctuations in Mesoscopic Structures ...........................2 63
M. Cahay, P. Marzolf and S. Bandyopadhyay
Author Index ............................................................................................. 267