Compound Semiconductors 2002 PDF
Preview Compound Semiconductors 2002
Compound Semiconductors 2002 Other titles in the series The Institute of Physics Conference Series regularly features papers present- ed at important conferences and symposia highlighting new developments in physics and related fields. Previous publications include: 177 Optical and Laser Diagnostics Papers presented at the First International Conference, London, UK Edited by C Arcoumanis and K T V Grattan 172 Electron and Photon Impact Ionization and Related Topics 2002 Papers presented at the International Conference, Metz, France Edited by L U Ancarani 171 Physics of Semiconductors 2002 Papers presented at the 26th International Conference, Edinburgh, UK Edited by A R Long and J H Davies 170 Compound Semiconductors 2001 Papers presented at the 28th International Symposium on Compound Semiconductors, Tokyo, Japan Edited by Y Arakawa, Y Hirayama, K Kishino and H Yamaguchi 169 Microscopy of Semiconducting Materials 2001 Papers presented at the 12th International Conference on Microscopy of Semiconducting Materials, Oxford, UK Edited by A G Cullis and J L Hutchison 168 Electron Microscopy and Analysis 2001 Papers presented at the Institute of Physics Electron Microscopy and Analysis Group Conference, Dundee, UK Edited by C J Kiely and M Aindow 167 Applied Superconductivity 1999 Papers presented at the Fourth European Conference on Applied Superconductivity, Sitges, Spain Edited by X Obradors and J Fontcuberta Compound Semiconductors 2002 Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors held in Lausanne, Switzerland, 7-10 October 2002 Edited by Marc Ilegems, Gunter Weimann and Joachim Wagner Institute of Physics Conference Series Number 174 laP Institute ofB oPcah Raytosn i Lconsd onP Nuewb Yloirkshing CRC Press is an imprint of the Bristol and Philadelphia Taylor & Francis Group, an informa business Copyright ©2003 by lOP Publishing Ltd and individual contributors. 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Authorization to photocopy items for internal or personal use, or the internal or personal use of specific clients in the USA, is granted by lOP Publishing Ltd to libraries and other users registered with the Copyright Clearance Center (CCC) Transactional Reporting Service, provided that the base fee of$30.00 per copy is paid directly to CCC, 222 Rosewood Drive, Danvers, MA 01923, USA. British Library Cataloguing in Publication Data A catalogue record for this book is available from the British Library. ISBN 0 7503 0942 3 Library ofC ongress Cataloging-in-Publication Data are available Published by Institute of Physics Publishing, wholly owned by the Institute of Physics, London Institute of Physics Publishing, Dirac House, Temple Back, Bristol BSI 6BE, UK US Office: Institute of Physics Publishing, The Public Ledger Building, Suite 929, 150 South Independence Mall West, Philadelphia, PA 19106, USA Printed in the UK by MPG Books Ltd, Bodmin, Cornwall International Symposium on Compound Semiconductors (ISCS) Heinrich Welker Award The International Symposium on Compound Semiconductors (ISCS) Heinrich Welker Award was initiated in 1976 to recognize an individual who has carried out outstanding research in the are of III-V compound semiconductors. The Award consists of US$5000 and a citation honouring the recipient's contribution to the field. The Award was established and has been supported by Siemens AG, Munich, in honour of Professor Heinrich Welker, the foremost pioneer in III-V compound semicon- ductor development. The winners of the ISCS Heinrich Welker Award are: 1976 Nick Holonyak for developing the first practical light-emitting diodes 1978 Cyril Hilsum for contributions in the fields of transferred electron logic devices (TELDs) and GaAs MESFETs 1980 Hisayoshi Yanai for his work on TELDs, GaAs MESFETs and ICs, and laser diode modulation with TELDs 1981 Gerald L Pearson for research and teaching in compound semiconductors physics and device technology 1982 Herbert Kroemer for his work on hot-electron effects, Gunn oscillators and III-V heterostructure devices 1984 Izuo Hayashi for development and understanding of room temperature operation of DH lasers 1985 Heinz Beneking for his contributions to III-V semiconductor technology and novel devices 1986 Alfred Y Cho for pioneering work on molecular beam epitaxy and his con- tribution to III-Vs emiconductor research 1987 Zhores I Alferov for outstanding contributions in theory, technology and devices, especially epitaxy and laser diodes 1988 Jerry Woodall for introducing the III-Va lloy AlGaAs and fundamental con- tributions to III-V physics 1989 Don Shaw for pioneering work on epitaxial crystal growth by chemical vapour deposition vi 1990 George S Stillman for the characterization of high-purity GaAs and developing avalanche photodetectors 1991 Lester F Eastman in recognition of his dedicated work in the field, especially on ballistic electron transport, delta-doping, buffer layer tech- nique, and AllnAs/GalnAs heterostructures 1992 Harry C Gatos for his contribution to science and technology of GaAs and related compounds, particularly in relating growth parame- ters, composition and structure to electronic properties 1993 James A Turner for pioneering the development of GaAs MESFETs, MMICs, circuit fabrication and analytical techniques 1994 Federico Capasso for leading work on bandgap engineering of semiconductor devices and discovery of many new phenomena in artificial- ly structured semiconductors 1995 Isamu Akasaki for his pioneering and outstanding contributions in the field of III-V nitride compound semiconductors 1996 Ben G Streetman for his seminal contribution to the development of ion implantation techniques for both device fabrication and the study of the properties of nitrogen in ternary alloys, and for pioneering work on microcavity emitters and detectors 1997 M George Craford for his contributions to the development of nitrogen-doped GaAsP technology for yellow and red-orange LEDs 1998 Takashi Mimura for his pioneering contribution to heterostructure high elec- tron mobility transistors 1999 Claude Weisbuch for his fundamental contributions to the understanding of the physics of quantum semiconductor structures and the devel- opment of novel optoelectronic device concepts 2000 James S Harris for his pioneering research in GaAs materials and devices over the past 35 years which have been key to realizing an economically viable GaAs technology 200 1 Karl Hess for his outstanding contributions to the theory of electronic transport in semiconductor heterostructures (including real space transfer, the full band Monte Carlo method and quan- tum well diode laser simulations) vii The Award Committee of the 29th International Symposium on Compound Semiconductors has elected Professor Hiroyuki Sakaki of the University of Tokyo as the recipient of the ISCS Heinrich Welker Award for his fundamental contributions to the study of semicon- ductor quantum heterostructures. Hiroyuki Sakaki Hiroyuki Sakaki received the BS in 1968, and MS and PhD degrees in electronic engi- neering in 1970 and 1973 all from the University of Tokyo. He was appointed associate pro- fessor in 1973 and full professor in 1987 at the Institute of Industrial Science of the University of Tokyo. In 1976-77, he was a visiting scientist in Dr Leo Esaki's group of IBM Watson Research Center and in 1999 visiting professor at the Ecole Normale Superieure in Paris. In 1968-73, he worked on electrons in MOS-FET channels and clarified the role of quantization at 300 K. Since 1974, he has done pioneering studies on the physics and appli- cations of semiconductor nanostructures; they include seminal works to control electrons with quantum dot (QD) and quantum wire (QWR) structures for new types of transistors (1975-76, 1980) and lasers (1982), the first in-plane transport studies of electrons in type-I and IT quantum wells (QWs) and superlattices (SLs) (1976-77), the co-invention of inter- subband QW infrared photodetectors (1977), and the MBE synthesis ofQWs, QWRs, and QDs and subsequent studies to disclose physics and rich device potentials of confined elec- trons in such systems (1976-2002). He received numerous awards such as the Medal of Honor (Purple Ribbon), the IEEE D. Sarnoff Award, the Fujiwara Prize, the Hattori-Hoko Award, the IBM Japan Science Award, the Shimadzu Science Award, and awards from several academic societies. He is a fellow member of the Institute of Electrical and Electronics Engineers, the American Physical Society, and the Institute of Electronics, Information and Communication Engineers. ISCS Quantum Devices Award The Quantum Devices Award was initiated in 2000 under the sponsorship of Fujitsu Quantum Devices Ltd. The Award is given to one or more individuals who have made pio- neering contributions to the fields of Compound Semiconductor Devices and Quantum Nanostructure Devices, which have made a major scientific or technological impact in the past 20 years. The award consists ofUS$5000 (or US$8000 in case the award is shared) and a citation honouring the recipient's contribution to the field. The Quantum Devices Award past recipients are : 2000 Gerald Bastard and for pioneering work on electric-field induced optic effects in Emilio Mendez quantum wells and superlattices (Quantum confined Stark effect and Wannier-Stark localization) 2001 Leo P Kouwenhoven for pioneering contributions to electronic transport and the Mark A Reed and spectroscopy of quantum dots Seigo Tarucha The Award Committee of the 29th International Symposium on Compound Semiconductor has elected Professor Yasuhiko Arakawa of the University of Tokyo as the recipient of the ISCS Quantum Devices Award for his pioneering contributions to the devel- opment of quantum dot and quantum wire lasers. Yasuhiko Arakawa
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