Circuit and Interconnect Design for RF and High Bit-Rate Applications ANALOGCIRCUITSANDSIGNALPROCESSINGSERIES ConsultingEditor:MohammedIsmail.OhioStateUniversity TitlesinSeries: THEGM/IDDESIGNMETHODOLOGYFORCMOSANALOGLOWPOWERINTEGRATEDCIRCUITS Jespers,PaulG.A. ISBN-10:0-387-47100-6 CIRCUITANDINTERCONNECTDESIGNFORRFANDHIGHBIT-RATEAPPLICATIONS Veenstra,Hugo,Long,JohnR. ISBN:978-1-4020-6882-9 HIGH-RESOLUTIONIF-TO-BASEBANDSIGMADELTAADCFORCARRADIOS Silva,PauloG.R.,Huijsing,JohanH. ISBN:978-1-4020-8163-7 SILICON-BASEDRFFRONT-ENDSFORULTRAWIDEBANDRADIOS Safarian,Aminghasem,Heydari,Payam ISBN:978-1-4020-6721-1 HIGH-LEVELMODELINGANDSYNTHESISOFANALOGINTEGRATEDSYSTEMS Martens,EwoutS.J.,Gielen,Georges ISBN:978-1-4020-6801-0 MULTI-BANDRFFRONT-ENDSWITHADAPTIVEIMAGEREJECTION ADECT/BLUETOOTHCASESTUDY Vidojkovic,V.,vanderTang,J.,Leeuwenburgh,A.,vanRoermund,A.H.M. ISBN:978-1-4020-6533-0 BASEBANDANALOGCIRCUITSFORSOFTWAREDEFINEDRADIO Giannini,Vito,Craninckx,Jan,Baschirotto,Andrea ISBN:978-1-4020-6537-8 DESIGNOFHIGHVOLTAGEXDSLLINEDRIVERSINSTANDARDCMOS Serneels,Bert,Steyaert,Michiel ISBN:978-1-4020-6789-1 CMOSMULTI-CHANNELSINGLE-CHIPRECEIVERSFORMULTI-GIGABITOPT... Muller,P.,Leblebici,Y. ISBN978-1-4020-5911-7 ANALOG-BASEBANDARCHITECTURESANDCIRCUITS FORMULTISTANDARDANDLOW-VOLTAGEWIRELESSTRANSCEIVERS Mak,PuiIn,U,Seng-Pan,Martins,RuiPaulo ISBN:978-1-4020-6432-6 FULL-CHIPNANOMETERROUTINGTECHNIQUES Ho,Tsung-Yi,Chang,Yao-Wen,Chen,Sao-Jie ISBN:978-1-4020-6194-3 ANALOGCIRCUITDESIGNTECHNIQUESAT0.5V Chatterjee,S.,Kinget,P.,Tsividis,Y.,Pun,K.P. ISBN-10:0-387-69953-8 LOW-FREQUENCYNOISEINADVANCEDMOSDEVICES vonHaartman,M.,Östling,M. ISBN978-1-4020-5909-4 SWITCHED-CAPACITORTECHNIQUESFORHIGH-ACCURACYFILTERANDADC... Quinn,P.J.,Roermund,A.H.M.v. ISBN978-1-4020-6257-5 ULTRALOWPOWERCAPACITIVESENSORINTERFACES Bracke,W.,Puers,R.(etal.) ISBN978-1-4020-6231-5 BROADBANDOPTO-ELECTRICALRECEIVERSINSTANDARDCMOS Hermans,C.,Steyaert,M. ISBN978-1-4020-6221-6 CMOSSINGLECHIPFASTFREQUENCYHOPPINGSYNTHESIZERSFORWIRELESS MULTI-GIGAHERTZAPPLICATIONS Bourdi,Taoufik,Kale,Izzet ISBN:978-1-4020-5927-8 CMOSCURRENT-MODECIRCUITSFORDATACOMMUNICATIONS Yuan,Fei ISBN:0-387-29758-8 ADAPTIVELOW-POWERCIRCUITSFORWIRELESSCOMMUNICATIONS Tasic,Aleksandar,Serdijn,WouterA.,Long,JohnR. ISBN:978-1-4020-5249-1 PRECISIONTEMPERATURESENSORSINCMOSTECHNOLOGY Pertijs,MichielA.P.,Huijsing,JohanH. ISBN-10:1-4020-5257-X Hugo Veenstra John R. Long • Circuit and Interconnect Design for RF and High Bit-Rate Applications ABC Dr.HugoVeenstra Prof.Dr.JohnR.Long PhilipsResearch DelftUniversityofTechnology HighTechCampus37 ElectronicsResearchLab. BuildingWY1.004 Mekelweg4 5656AEEindhoven 2628CDDelft Netherlands ETBldg. Netherlands ISBN978-1-4020-6882-9 e-ISBN978-1-4020-6884-3 LibraryofCongressControlNumber:2008926523 (cid:176)c 2008SpringerScience+BusinessMediaB.V. 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Printedonacid-freepaper 9 8 7 6 5 4 3 2 1 springer.com Contents Preface............................................................ ix 1 TheChallenge ................................................. 1 1.1 Interconnect ............................................... 6 1.2 DeviceMetrics............................................. 8 1.3 Cross-ConnectSwitches..................................... 10 1.4 TransistorOperationaboveBV ............................ 13 CEO 1.5 CMLCircuits,PRBSGenerator .............................. 16 1.6 Oscillators ................................................ 19 1.7 OutlineoftheBook......................................... 21 References..................................................... 23 2 InterconnectModelling,AnalysisandDesign...................... 25 2.1 Introduction ............................................... 25 2.2 TransmissionLineTheory ................................... 29 2.2.1 Single-EndedLines .................................. 29 2.2.2 DifferentialLines .................................... 34 2.3 WhentoIncludeTransmissionLineEffects..................... 37 2.4 SecondaryEffects .......................................... 38 2.4.1 EffectofthePassivationLayer ......................... 39 2.4.2 EffectoftheSubstrate;Slow-WaveEffects............... 39 2.4.3 SkinEffect.......................................... 42 2.5 Resistivity-FrequencyModeChartforaMicrostripLine.......... 47 2.6 PreferredTransmissionLineConfigurations .................... 51 2.7 ApplyingtheSkinEffectFormulastoaSiGeBiCMOSProcess.... 53 2.8 ModelsIncludingSkinEffect ................................ 55 2.9 SignalTransferAcrossaTransmissionLine .................... 57 2.10 InterconnectTestStructures.................................. 58 2.10.1 Single-EndedTransmissionLine ....................... 59 2.10.2 DifferentialTransmissionLine ......................... 61 2.11 ModellingandConsiderationsofDigitalInterconnect ............ 68 v vi Contents 2.12 CircuitandInterconnectDesignFlow.......................... 69 2.13 ConclusionsandOutlook .................................... 70 References..................................................... 72 3 DeviceMetrics................................................. 75 3.1 Introduction ............................................... 75 3.2 MillerEffects.............................................. 77 3.3 DefinitionsBasedony-Parameters ............................ 78 3.3.1 UnityCurrentGainBandwidth f ...................... 79 T 3.3.2 InputBandwidth f .................................. 81 V 3.3.3 OutputBandwidth f andAvailableBandwidth f ....... 82 out A 3.3.4 NegativeResistanceofaCross-CoupledDifferential Pair f ........................................... 85 cross 3.3.5 MaximumOscillationFrequency f ................... 87 max 3.4 ApproximateFormulasfortheDeviceMetrics .................. 89 3.4.1 Approximationfor f ................................ 91 T 3.4.2 Approximationfor f ................................ 92 V 3.4.3 Approximationfor f ............................... 92 out 3.4.4 Approximationfor f ................................. 94 A 3.4.5 Approximationfor f .............................. 97 cross 3.4.6 Approximationfor f ............................... 98 max 3.5 OptimisingaTechnologyfor f ..............................101 A 3.6 Relationshipbetween f ,f and f ..........................106 A T max 3.7 TrendsinDeviceMetrics:AComparisonofRecentTechnologies ..108 3.7.1 TrendsRelatingtoDeviceMetrics......................108 3.7.2 Self-Heating ........................................111 3.8 OtherTrends ..............................................113 3.9 BipolarVersusRF-CMOS ...................................114 3.10 ConclusionsandOutlook ....................................115 References.....................................................116 4 Cross-ConnectSwitchDesign....................................119 4.1 Introduction ...............................................119 4.2 SwitchMatrixDesign.......................................121 4.2.1 TransmissionLinesforRowsandColumns ..............122 4.2.2 TheConceptofDistributedCapacitiveLoading...........122 4.2.3 MatrixNodeCircuitDesign ...........................124 4.2.4 Cross-ConnectSwitchICFloorplan.....................132 4.3 BufferCircuits.............................................136 4.3.1 IntermediateBufferCircuits ...........................136 4.3.2 InputandOutputBufferCircuits .......................137 4.4 CompleteRFSignalPath ....................................138 4.4.1 Small-SignalSimulations .............................138 4.4.2 Large-SignalSimulations .............................141 4.5 SupplyDecoupling .........................................142 Contents vii 4.6 ExperimentalResults .......................................145 4.7 ConclusionsandOutlook ....................................148 References.....................................................150 5 BiasCircuitsToleratingOutputVoltagesAboveBV ............153 CEO 5.1 Introduction ...............................................153 5.2 PrincipleofCollector-BaseAvalancheCurrent ..................155 5.3 AnalysisofSimple2-TransistorCurrentMirrors ................158 5.4 AnalysisofCurrentMirrorswithInternalBuffer ................161 5.5 AvalancheCurrentCompensation.............................163 5.5.1 FeedforwardTechniques ..............................163 5.5.2 FeedbackTechniques.................................166 5.6 ConclusionsandOutlook ....................................170 References.....................................................174 6 DesignofSynchronousHigh-SpeedCMLCircuits, aPRBSGenerator .............................................175 6.1 Introduction ...............................................175 6.2 PRBSBackground .........................................176 6.3 InPTechnology ............................................179 6.4 PRBSGeneratorDesign.....................................181 6.4.1 PRBSGeneratorBlockDiagram .......................181 6.4.2 All-ZeroDetectionandCorrection......................184 6.4.3 ClockDistributionandLatchDesign....................185 6.5 ExperimentalResults .......................................191 6.6 DistributedCapacitiveLoadingReviewed ......................193 6.7 ConclusionsandOutlook ....................................194 References.....................................................196 7 AnalysisandDesignofHigh-FrequencyLC-VCOs.................197 7.1 Introduction ...............................................197 7.2 InputImpedanceofaCross-CoupledDifferentialPair ............199 7.3 InputImpedanceofaCapacitivelyLoadedEmitterFollower ......202 7.4 CombiningNegativeResistanceandOutputBufferFunctions .....204 7.5 LC-VCOOperatingataFrequencyCloseto f ...............207 cross 7.5.1 InductorandVaractor.................................208 7.5.2 VCOandOutputBufferCircuits .......................210 7.5.3 ExperimentalResults.................................212 7.6 LC-VCOOperatingataFrequencyabove f .................216 cross 7.6.1 InductorandVaractor.................................216 7.6.2 VCOandOutputBufferCircuits .......................218 7.6.3 ExperimentalResults.................................219 7.7 I/QSignalGeneration ......................................224 7.8 ConclusionsandOutlook ....................................232 References.....................................................234 viii Contents Glossary ..........................................................235 Abbreviations ..................................................235 Constants ......................................................236 Symbols.......................................................236 AppendixA y-parametersforaTransistorModelwithArbitraryR ,R andR ..239 e b c Index .............................................................245 Preface Circuitandinterconnectdesigntechniquesthattacklemanyofthegreatestdifficul- tiesanduncertaintiesinthedevelopmentofICsforRFandhighbit-rateapplications arethesubjectofthisbook.Atbit-ratesabove10Gb/s,theimpactofon-chipinter- connectoncircuitperformancecanbedetrimentaltotheperformanceoftheIC.The bottlenecksininterconnectdesign,circuitdesignandon-chipsignaldistributionfor high bit-rate applications are analysed, and solutions for circumventing them pre- sented.Thesemethodologiescanbeappliedtoanalysewhethertargetbit-ratesand frequencies can be reached in a given IC technology, or to provide guidelines for further IC process optimisation in support of today’s and tomorrow’s high bit-rate circuit design. It should be noted that specific amplifier requirements such as low noiseandintermodulationdistortionarenotdiscussedinthisbook. Themaintopicsaddressedinthisbookandhowtheyrelatetoeachanotherare illustratedinFig.1.Highbit-ratecircuitdesignusingadvancedSiGeandInPHBT ICtechnologiesisthecoresubjectofthismonograph. The bottlenecks in IC design for high bit-rate applications tackled in this bookare: 1. Interconnectdesignandmodelling 2. ICprocesstechnology:transistorperformanceandoptimisation;relevantmetrics 3. On-chipsignaldistribution;jointoptimisationofcircuitandinterconnect 4. Reducedbreakdownvoltageoftransistorsinnext-generationICprocesses 5. LC-VCOdesignatmicrowavefrequencies 6. ICdesignflow Severalkeyinnovationsarepresentedinthisbook.Foron-chiptransmissionlines, configurationsareproposedthatareminimallysensitivetotheirsurroundings(see Fig.2.20).Theseconfigurationsenablelowloss,lowcrosstalkandwell-controlled line characteristics (e.g., characteristic impedance and delay). Improved perfor- mancemarginsprovideflexibilityinthelayoutfloorplanofanIC.Thefloorplanis usuallyilldefinedintheinitialphaseofanICdesign.However,adesignlibraryof interconnectsthataredesensitizedtotheirsurroundingsenablesaccuratepredictions oftheimpactofinterconnectsoncircuitperformance,simplifyingthefloorplanning ix
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