Basic Electronics

836 Pages·2010·22.211 MB·English

by  Debashis De, Kamakhya Prasad Ghatak

BASIC ELECTRONICS

Debashis De
With contributions from
Kamakhya Prasad Ghatak

Delhi • Chennai • Chandigarh
BRIEF CONTENTS
Preface
Reviewers
The Author and the Contributor
1 Semiconductor Fundamentals
2 Diode Fundamentals
3 Diode Circuits
4 BJT Fundamentals
5 BJT Circuits
6 Field-Effect Transistor
7 FET Circuits
8 Special Semiconductor Devices
9 Feedback Amplifier
10 Fundamentals of Integrated Circuit Fabrication
11 Operational Amplifier
12 Oscillators
13 Digital Electronic Principles
14 Electronic Instruments
CONTENTS
Preface
Reviewers
The Author and the Contributor
1 Semiconductor Fundamentals
1-1 Introduction
1-2 Crystalline Materials
Semiconducting Materials
1-2-1 Crystals and Crystal Structures
1-2-2 Mechanical Properties
1-2-3 Energy Band Theory
Simplified Derivation of the Fermi–Dirac Statistics
1-3 Basis of Classification: Metals, Semiconductors and Insulators
1-3-1 Insulators (Eg >> 4 eV)
1-3-2 Semiconductors (0 eV ≤ Eg ≤ 4 eV)
1-3-3 Metals (Inter-Penetrating Band Structure)
1-4 Intrinsic Semiconductors
1-5 Extrinsic Semiconductors
1-5-1 Doping
1-5-2 Dopants
1-5-3 Carrier Statistics in n- and p-type Semiconductors
Properties of the Fermi–Dirac Integral
1-6 Electrical Conduction Phenomenon
1-6-1 Mobility
1-6-2 Conductivity
1-6-3 Diffusion of Carriers
1-6-4 Einstein Relation
1-6-5 Recombination and Generation Processes
1-7 The Continuity Equation
1-8 Hall Effect
2 Diode Fundamentals
2-1 Introduction
2-2 Formation of the p–n Junction
2-3 Energy Band Diagrams
2-3-1 The p–n Junction at Thermal Equilibrium
2-4 Concepts of Junction Potential
2-4-1 Space-Charge Region
2-4-2 Built-in and Contact Potentials
2-4-3 Effect of Doping on Barrier Field
Invariance of Fermi Level at Thermal Equilibrium
2-4-4 Formulation of Built-in Potential
2-5 Modes of the p–n Junction
2-5-1 The p–n Junction with External Applied Voltage
2-5-2 Rectifying Voltage–Current Characteristics of a p–n Junction
2-5-3 The Junction Capacitance
2-5-4 The Varactor Diode
2-6 Derivation of the I–V Characteristics of a p–n Junction Diode
2-7 Linear Piecewise Models
2-8 Breakdown Diode
2-8-1 Zener Breakdown
2-8-2 Avalanche Breakdown
2-9 Special Types of p–n Junction Semiconductor Diodes
2-9-1 Tunnel Diode
2-9-2 Light-Emitting Diode
2-9-3 Photo Detector Diode
2-9-4 Photovoltaic Diode
2-10 Applications of Diode
2-10-1 Radio Demodulation
2-10-2 Power Conversion
2-10-3 Over-Voltage Protection
2-10-4 Logic Gates
2-10-5 Ionizing Radiation Detectors
2-10-6 Temperature Measuring
2-10-7 Charge-Coupled Devices
3 Diode Circuits
3-1 Introduction
3-2 Analysis of Diode Circuits
3-3 Load Line and Q-Point
3-4 Zener Diode as Voltage Regulator
3-4-1 Line Regulation
3-4-2 Load Regulation: Regulation with Varying Load Resistance
3-5 Rectifiers
3-5-1 Half-Wave Rectifier
3-5-2 Full-Wave Rectifier
3-5-3 Use of Filters in Rectification
3-5-4 Regulation
3-5-5 Performance Analysis of Various Rectifier Circuits
3-6 Clipper and Clamper Circuits
3-6-1 Clipper
3-6-2 Clamper
3-7 Comparators
3-8 Additional Diode Circuits
3-8-1 Voltage Multiplier
3-8-2 Peak Detector
3-8-3 Digital Circuits
3-8-4 Switching Regulators
4 BJT Fundamentals
4-1 Introduction
4-2 Formation of p–n–p and n–p–n Junctions
4-3 Transistor Mechanism
4-4 Energy Band Diagrams
4-5 Transistor Current Components
4-5-1 Current Components in p–n–p Transistor
4-5-2 Current Components in n–p–n Transistor
4-6 CB, CE and CC Configurations
4-6-1 Common-Base (CB) Mode
4-6-2 Common-Emitter (CE) Mode
4-6-3 Common-Collector (CC) Mode
4-7 Expression for Current Gain
4-7-1 Relationship between α and β
Ebers–Moll Model of Transistor
4-8 Transistor Characteristics
4-8-1 Input Characteristics
4-8-2 Output Characteristics
4-9 Operating Point and the Concept of Load Line
4-10 Early Effect
5 BJT Circuits
5-1 Introduction
5-2 Biasing and Bias Stability
5-2-1 Circuit Configurations
5-2-2 Stabilization Against Variations in ICO, VBE and β
5-3 Calculation of Stability Factors
5-3-1 Stability Factor S
5-3-2 Stability Factor S'
5-3-3 Stability Factor S''
5-3-4 General Remarks on Collector Current Stability
5-4 CE, CB Modes and Their Properties
5-4-1 Common-Emitter (CE) Mode
5-4-2 Common-Base Mode
5-5 Small-Signal Low-Frequency Operation of Transistors
5-5-1 Hybrid Parameters and Two-Port Network
5-6 Equivalent Circuits Through Hybrid Parameters as a Two-Port Network
5-7 Transistor as Amplifier
5-7-1 The Parameter α'
5-8 Expressions of Current Gain, Input Resistance, Voltage Gain and Output Resistance
5-8-1 Current Gain (AI)
5-8-2 Input Resistance (RI)
5-8-3 Voltage Gain (Av)
5-8-4 Output Resistance (RO)
5-9 Frequency Response for CE Amplifier with and without Source Impedance
5-9-1 Conclusions
5-10 Emitter Follower
5-11 Darlington Pair
5-12 Transistor at High Frequencies
5-13 Real-Life Applications of the Transistor
6 Field-Effect Transistor
6-1 Introduction
6-2 The Field-Effect Transistor
6-2-1 Junction Field-Effect Transistor (JFET)
6-2-2 Insulated Gate Field-Effect Transistor (IGFET)
6-2-3 Metal-Semiconductor Field-Effect Transistor (MESFET)
6-3 Construction of the JFET
6-4 Biasing of the JFET
6-4-1 Effect of the Gate Voltage
6-5 Current–Voltage Characteristics
6-6 Transfer Characteristics of the JFET
6-7 Construction and Characteristics of the MOSFET
6-7-1 Depletion-Type MOSFET
6-7-2 Enhancement-Type MOSFET
6-8 Complementary MOS
6-8-1 Construction of the CMOS
6-8-2 CMOS Inverter
Examination of Mosfets under Two Extremes
6-9 Real-Life Applications of the FET
7 FET Circuits
7-1 Introduction
7-2 FET Biasing
7-2-1 Fixed-Bias Arrangement
7-2-2 Self-Bias Arrangement
7-2-3 Voltage Divider Biasing Arrangement
7-3 FET as an Amplifier
7-3-1 DC Bias Point
7-3-2 Voltage Gain of the FET
7-4 Electrical Parameters of the FET
7-5 AC Equivalent Circuit for Small-Signal Analysis
7-5-1 Small-Signal Model for the MOSFET
T Equivalent-Circuit Model
7-6 High-Frequency MOSFET Model
7-6-1 Effective Capacitance of the Gate
7-6-2 The Junction Capacitance
7-6-3 The High-Frequency Models of the MOSFET
7-7 Additional FET Circuits
7-7-1 MOS Differential Amplifiers
7-7-2 Current Source Circuits
7-8 Comparison Between the FET and the BJT
8 Special Semiconductor Devices
8-1 Introduction
8-2 Silicon-Controlled Rectifier (SCR)
8-2-1 Constructional Features
8-2-2 Physical Operation and Characteristics
8-2-3 I–V Characteristics of the SCR
8-2-4 Simple Applications
8-3 Triode AC Switch (TRIAC)
8-3-1 Constructional Features
Physical Operation and Characteristics of the TRIAC
8-4 Diode AC Switch (DIAC)
8-4-1 Constructional Features
8-4-2 Physical Operation and Characteristics
8-4-3 Applications
8-5 Unijunction Transistor (UJT)
8-5-1 Constructional Features
8-5-2 Physical Operation and Characteristics
8-5-3 Applications
8-6 Insulated-Gate Bipolar Transistor (IGBT)
8-6-1 Constructional Features
8-6-2 Physical Operation and Characteristics
8-7 Real-Life Applications
9 Feedback Amplifier
9-1 Introduction
9-2 Conceptual Development Through Block Diagrams
9-2-1 Input Signal
9-2-2 Output Signal
9-2-3 Sampling Network
9-2-4 Comparison or Summing Network
9-2-5 Basic Amplifier
9-3 Properties of Negative Feedback
9-4 Calculations of Open-Loop Gain, Closed-Loop Gain and Feedback Factors
9-4-1 Loop Gain or Return Ratio
9-5 Topologies of the Feedback Amplifier
9-5-1 Voltage-Series or Series-Shunt Feedback
9-5-2 Current-Series or Series-Series Feedback
9-5-3 Current-Shunt or Shunt-Series Feedback
9-5-4 Voltage-Shunt or Shunt-Shunt Feedback
9-6 Effect of Feedback on Gain, Input and Output Impedances