Audio Subsystem with Mono Class AB Loudspeaker Amp & Stereo OCL/SE Headphone Amp

29 Pages·2015·1.32 MB·English

LM49120, LM49120TLEVAL
www.ti.com SNAS431C–JUNE2008–REVISEDMAY2013
LM49120 Audio Sub-System with Mono Class AB
Loudspeaker Amplifier and Stereo OCL/SE Headphone Amplifier
CheckforSamples:LM49120,LM49120TLEVAL
FEATURES DESCRIPTION
1
• RFImmunity The LM49120 is a compact audio subsystem
2 designed for portable handheld applications such as
• SelectableOCL/SEHeadphoneDrivers
cellular phones. The LM49120 combines a mono
• 32StepVolumeControl 1.3W speaker amplifier, stereo 85mW/ch output
• ClickandPopSuppression capacitorless headphone amplifier, 32 step volume
control, and an input mixer/multiplexer into a single
• IndependentSpeakerandHeadphoneGain
16–bumpDSBGApackage.
Settings
The LM49120 has three input channels: two single-
• MinimumExternalComponents
ended stereo inputs and a differential mono input.
• ThermalOverLoadProtection
Each input features a 32-step digital volume control.
• Micro-powerShutdown The headphone output stage features an 8 step (-
• SpaceSaving16–bumpDSBGA Package 18dB – 0dB) attenuator, while the speaker output
stage has two selectable (0dB/+6dB) gain settings.
• ThermalShutdownProtection
The digital volume control and mode control are
• Micro-powerShutdown programmed through a two-wire I2C compatible
• I2CControlInterface interface.
APPLICATIONS
• MobilePhones
• PDAs
• PortableElectronics
KEY SPECIFICATIONS
• Output PoweratVDD =5V:
– Speaker: RL=8ΩBTL,THD+N≤ 1%:1.3W
(typ)
– Headphone:RL=32Ω,SE,THD+N≤ 1%:
85mW(typ)
• Output PoweratVDD =3.6V:
– Speaker: RL=8Ω,BTL,THD+N≤ 1%:
632mW(typ)
• Output PoweratVDD =3.3V:
– Speaker: RL=8Ω,BTL,THD+N≤ 1%:
540mW(typ)
– Headphone:RL=32Ω,OCL/SE,THD+N≤
1%:35mW(typ)
1
Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsof
TexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
Alltrademarksarethepropertyoftheirrespectiveowners.
2
PRODUCTIONDATAinformationiscurrentasofpublicationdate. Copyright©2008–2013,TexasInstrumentsIncorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarilyincludetestingofallparameters.
LM49120, LM49120TLEVAL
SNAS431C–JUNE2008–REVISEDMAY2013 www.ti.com
Typical Application
VDD
1 PF 0.1 PF ceramic
+
CS1 CS2 Handsfree
Speaker
CIN4 MONO_IN+
+ MONO +
1C IPNF3 +MONO_IN- VMoultuem toe +C1o8n tdroBl ++C60l adsBs AB 8:
- MONO -
1 PF +
CIN2 Mixer -18 – 0 dB ROUT
AUDIO RIN Volume Control Oauntpdut (8 steps) 32:
INPUT + Mute to +18 dB Mode
0.22 PF Select VOC
CIN1
AINUPDUIOT +LIN VMoultuem toe +C1o8n tdroBl -(188 s –te 0p sd)B LOUT 32:
0.22 PF
2 CB
ICVDD 2
SDA IC Bias
Interface Bypass +
SCL 2.2PF
GND
Figure1. Output Capacitor-LessConfiguration
VDD
1 PF 0.1 PF ceramic
+ Handsfree
CS1 CS2 Speaker
CIN4 MONO_IN+
+ MONO +
1 PF + Volume Control +C0lass AB 8:
CIN3 MONO_IN- Mute to +18 dB +6 dB
- MONO -
1 PF +
ROUTCO
AUDIO CIN2 RIN Volume Control OMauinxtpdeurt -(188 s –te 0p sd)B 10+0 PF 32:
INPUT + Mute to +18 dB Mode
0.22 PF Select
VOC
CIN1
AINUPDUIOT +LIN VMoultuem toe +C1o8n tdroBl -(188 s –te 0p sd)B LOUT+CO 32:
0.22 PF 100 PF
I2CVDD 2 CB
SDA IC Bias
Interface Bypass+
SCL 2.2PF
GND
The6dBspeakergainappliesonlytothedifferentialinputpath.
Figure2. Single-EndedConfiguration
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Connection Diagram
TopView
1 2 3 4
A VOC VDD ROUT LOUT
B MONO_IN+ BYPASS LIN RIN
C MONO_IN- I2CVDD SCL SDA
D MONO- GND VDD MONO+
Figure3. 16BumpDSBGAPackage
(Bump-SideDown)
SeePackageNumber YZR0016
PINDESCRIPTIONS
Bump Name Description
A1 V HeadphoneCenterAmplifierOutput
OC
A2 V HeadphonePowerSupply
DD
A3 R RightChannelHeadphoneOutput
OUT
A4 L LeftChannelHeadphoneOutput
OUT
B1 MONO_IN+ MonoNon-invertingInput
B2 BYPASS BiasBypass
B3 L LeftChannelInput
IN
B4 R RightChannelInput
IN
C1 MONO_IN- MonoInvertingInput
C2 I2CV I2CInterfacePowerSupply
DD
C3 SCL I2CClockInput
C4 SDA I2CDataInput
D1 MONO- LoudspeakerInvertingOutput
D2 GND Ground
D3 V PowerSupply
DD
D4 MONO+ LoudspeakerNon-invertingOutput
Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam
duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
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Absolute Maximum Ratings(1)(2)(3)
SupplyVoltage(1) 6.0V
StorageTemperature −65°Cto+150°C
InputVoltage −0.3toV +0.3
DD
PowerDissipation(4) InternallyLimited
ESDRating(5) 2000V
ESDRating(6) 200V
JunctionTemperature 150°C
SolderInformation VaporPhase(60sec.) 215°C
Infrared(15sec.) 220°C
ThermalResistance θ (typ)-YZR0016 62.3°C/W
JA
(1) “AbsoluteMaximumRatings”indicatelimitsbeyondwhichdamagetothedevicemayoccur,includinginoperabilityanddegradationof
devicereliabilityand/orperformance.Functionaloperationofthedeviceand/ornon-degradationattheAbsoluteMaximumRatingsor
otherconditionsbeyondthoseindicatedintheRecommendedOperatingConditionsisnotimplied.TheRecommendedOperating
Conditionsindicateconditionsatwhichthedeviceisfunctionalandthedeviceshouldnotbeoperatedbeyondsuchconditions.All
voltagesaremeasuredwithrespecttothegroundpin,unlessotherwisespecified.
(2) TheElectricalCharacteristicstableslistspacifiedspecificationsunderthelistedRecommendedOperatingConditionsexceptas
otherwisemodifiedorspecifiedbytheElectricalCharacteristicsConditionsand/orNotes.Typicalspecificationsareestimationsonlyand
arenotensured
(3) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexasInstrumentsSalesOffice/Distributorsforavailabilityand
specifications.
(4) ThemaximumpowerdissipationmustbederatedatelevatedtemperaturesandisdictatedbyT ,θ ,andtheambienttemperature,
JMAX JA
T .ThemaximumallowablepowerdissipationisP =(T -T )/θ orthenumbergiveninAbsoluteMaximumRatings,
A DMAX JMAX A JA
whicheverislower.
(5) Humanbodymodel,applicablestd.JESD22-A114C.
(6) Machinemodel,applicablestd.JESD22-A115-A.
Operating Ratings
TemperatureRange −40°Cto85°C
SupplyVoltage(V ) 2.7V≤V ≤5.5V
DD DD
SupplyVoltage(I2CV ) 1.7V≤I2CV ≤5.5V
DD DD
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Electrical Characteristics 3.3V(1)(2)
ThefollowingspecificationsapplyforV =3.3V,T =25°C,allvolumecontrolssetto0dB,unlessotherwisespecified.
DD A
LM49120 Units
Parameter TestConditions
Typ(3) Limits(4) (Limits)
V =0,NoLoad
IN
Outputmode5,6,7,9,10,11,13,14,15
6.2 8.0 mA(max)
OCLHeadphone
Outputmode5,6,7,9,10,11,13,14,15
5.5 mA
SEHeadphone
Outputmode1,2,3
4.1 5.3 mA(max)
I SupplyCurrent OCLHeadphone
DD
Outputmode1,2,3
5.5 mA
SEHeadphone
Outputmode4,8,12
3.7 4.7 mA(max)
OCLHeadphone
Outputmode4,8,12
3.0 mA
SEHeadphone
I ShutdownCurrent ShutdownMode0 0.01 1 µA
SD
V =0V,OutputMode10,LSoutput 10 mV
IN
VOS OutputOffsetVoltage VIN=0V,OutputMode10,HPoutput, 1.5 5 mV(max)
(OCL),0dB(HPOutputGain)
LS ;R =8Ω
OUT L 540 500 mW(min)
THD+N=1%;f=1kHz,BTL,Mode1
P OutputPower
O
L andR ;R =32Ω
OUT OUT L 35 30 mW(min)
THD+N=1%;f=1kHz,OCL,Mode8
MONO
OUT
f=1kHz 0.05 %
P =250mW;R =8Ω,BTL,Mode1
OUT L
THD+N TotalHarmonicDistortion+Noise L andR ,f=1kHz
OUT OUT 0.015 %
P =12mW;R =32Ω,SE,Mode8
OUT L
L andR ,f=1kHz
OUT OUT 0.015 %
P =12mW;R =32Ω,OCL,Mode8
OUT L
A-weighted,
inputsterminatedtoGND,Outputreferred
SpeakerAmplifier;Mode1 15 μV
SpeakerAmplifier;Mode2 24 μV
SpeakerAmplifier;Mode3 29 μV
e OutputNoise HeadphoneAmplifier;SE,Mode4 8 μV
OUT
HeadphoneAmplifier;SE,Mode8 8 μV
HeadphoneAmplifier;SE,Mode12 11 μV
HeadphoneAmplifier;OCL,Mode4 8 μV
HeadphoneAmplifier;OCL,Mode8 9 μV
HeadphoneAmplifier;OCL,Mode12 12 μV
(1) “AbsoluteMaximumRatings”indicatelimitsbeyondwhichdamagetothedevicemayoccur,includinginoperabilityanddegradationof
devicereliabilityand/orperformance.Functionaloperationofthedeviceand/ornon-degradationattheAbsoluteMaximumRatingsor
otherconditionsbeyondthoseindicatedintheRecommendedOperatingConditionsisnotimplied.TheRecommendedOperating
Conditionsindicateconditionsatwhichthedeviceisfunctionalandthedeviceshouldnotbeoperatedbeyondsuchconditions.All
voltagesaremeasuredwithrespecttothegroundpin,unlessotherwisespecified.
(2) TheElectricalCharacteristicstableslistspacifiedspecificationsunderthelistedRecommendedOperatingConditionsexceptas
otherwisemodifiedorspecifiedbytheElectricalCharacteristicsConditionsand/orNotes.Typicalspecificationsareestimationsonlyand
arenotensured
(3) TypicalvaluesrepresentmostlikelyparametricnormsatT =+25ºC,andattheRecommendedOperationConditionsatthetimeof
A
productcharacterizationandarenotensured.
(4) Datasheetmin/maxspecificationlimitsareensuredbytestorstatisticalanalysis.
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Electrical Characteristics 3.3V(1)(2) (continued)
ThefollowingspecificationsapplyforV =3.3V,T =25°C,allvolumecontrolssetto0dB,unlessotherwisespecified.
DD A
LM49120 Units
Parameter TestConditions
Typ(3) Limits(4) (Limits)
V =200mV ;f =217Hz,R =8Ω(Speaker);R =32Ω(Headphone)
RIPPLE PP RIPPLE L L
C =2.2µF,BTL
B
AllaudioinputsterminatedtoGND;outputreferred
SpeakerOutput;SpeakerOutputGain6dB
SpeakerAmplifier;Mode1 79 dB
SpeakerAmplifier;Mode2 63 dB
SpeakerAmplifier;Mode3 62 dB
SpeakerAmplifierOutput;SpeakerOutputGain0dB
SpeakerAmplifier;Mode1 84 dB
PSRR PowerSupplyRejectionRatio SpeakerAmplifier;Mode2 63 dB
SpeakerAmplifier;Mode3 62 dB
HeadphoneAmplifierOutput
HeadphoneAmplifier;SE,Mode4 83 dB
HeadphoneAmplifier;SE,Mode8 84 dB
HeadphoneAmplifier;SE,Mode12 78 dB
HeadphoneAmplifier;OCL,Mode4 83 dB
HeadphoneAmplifier;OCL,Mode8 80 dB
HeadphoneAmplifier;OCL,Mode12 77 dB
VOL VolumeControlStepSizeError ±0.2 dB
∈
–91 dB(min)
MaximumAttenuation –86
–81 dB(max)
VOL DigitalVolumeControlRange
RANGE
17.4 dB(min)
MaximumGain 18
18.6 dB(max)
A HP(SE)MuteAttenuation OutputMode1,2,3 96 dB
u(HP)
10 kΩ(min)
Maximumgainsetting 12.5
MONO_INInputImpedance 15 kΩ(max)
Z
IN LINandRINInputImpedance 90 kΩ(min)
Maximumattenuationsetting 110
130 kΩ(max)
f=217Hz,V =1V ,
CM PP
Speaker,BTL,Mode1,
61 dB
R =8Ω
L
DifferentialInput
CMRR Common-ModeRejectionRatio
f=217Hz,V =1V ,
CM PP
Headphone,OCL,Mode4,
66 dB
R =32Ω
L
StereoInput
Headphone;P =12mW
OUT –60 dB
f=1kHz,OCL.Mode8
X Crosstalk
TALK
Headphone;P =12mW
OUT –72 dB
f=1kHz,SE,Mode8
C =4.7μF,OCL 35 ms
B
C =2.2μF,SE,
B
NormalTurnOnMode 120 ms
Turn_On_Time=1
T Wake-UpTimefromShutdown
WU
C =2.2μF,OCL 30 ms
B
C =4.7μF,SE,
B
FastTurnOnMode 130 ms
Turn_On_Time=0
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Electrical Characteristics 5.0V(1)(2)
ThefollowingspecificationsapplyforV =5.0V,T =25°C,allvolumecontrolssetto0dB,unlessotherwisespecified.
DD A
LM49120 Units
Parameter TestConditions
Typ(3) Limits(4) (Limits)
V =0,NoLoad
IN
Outputmode5,6,7,9,10,11,13,14,15
7.2 mA
OCLHeadphone
Outputmode5,6,7,9,10,11,13,14,15
6.4 mA
SEHeadphone
Outputmode1,2,3
6.4 mA
I SupplyCurrent OCLHeadphone
DD
Outputmode1,2,3
4.8 mA
SEHeadphone
Outputmode4,8,12
4.4 mA
OCLHeadphone
Outputmode4,8,12
3.5 mA
SEHeadphone
I ShutdownCurrent ShutdownMode0 0.01 µA
SD
V =0V,OutputMode10,LSoutput 10 mV
IN
VOS OutputOffsetVoltage VIN=0V,OutputMode10,HPoutput, 1.5 mV
(OCL),0dB(HPOutputGain)
LS ;R =8Ω
OUT L 1.3 W
THD+N=1%;f=1kHz,BTL,Mode1
P OutputPower
O
L andR ;R =32Ω
OUT OUT L 85 mW
THD+N=1%;f=1kHz,OCL,Mode8
LS
OUT
f=1kHz 0.05 %
P =250mW;R =8Ω,BTL,Mode1
OUT L
THD+N TotalHarmonicDistortion+Noise L andR ,f=1kHz
OUT OUT 0.015 %
P =12mW;R =32Ω,SE,Mode8
OUT L
L andR ,f=1kHz
OUT OUT 0.015 %
P =12mW;R =32Ω,OCL,Mode8
OUT L
A-weighted,
inputsterminatedtoGND,Outputreferred
SpeakerAmplifier;Mode1 17 μV
SpeakerAmplifier;Mode2 27 μV
SpeakerAmplifier;Mode3 33 μV
e OutputNoise HeadphoneAmplifier;SE,Mode4 8 μV
OUT
HeadphoneAmplifier;SE,Mode8 8 μV
HeadphoneAmplifier;SE,Mode12 12 μV
HeadphoneAmplifier;OCL,Mode4 9 μV
HeadphoneAmplifier;OCL,Mode8 9 μV
HeadphoneAmplifier;OCL,Mode12 12 μV
(1) “AbsoluteMaximumRatings”indicatelimitsbeyondwhichdamagetothedevicemayoccur,includinginoperabilityanddegradationof
devicereliabilityand/orperformance.Functionaloperationofthedeviceand/ornon-degradationattheAbsoluteMaximumRatingsor
otherconditionsbeyondthoseindicatedintheRecommendedOperatingConditionsisnotimplied.TheRecommendedOperating
Conditionsindicateconditionsatwhichthedeviceisfunctionalandthedeviceshouldnotbeoperatedbeyondsuchconditions.All
voltagesaremeasuredwithrespecttothegroundpin,unlessotherwisespecified.
(2) TheElectricalCharacteristicstableslistspacifiedspecificationsunderthelistedRecommendedOperatingConditionsexceptas
otherwisemodifiedorspecifiedbytheElectricalCharacteristicsConditionsand/orNotes.Typicalspecificationsareestimationsonlyand
arenotensured
(3) TypicalvaluesrepresentmostlikelyparametricnormsatT =+25ºC,andattheRecommendedOperationConditionsatthetimeof
A
productcharacterizationandarenotensured.
(4) Datasheetmin/maxspecificationlimitsareensuredbytestorstatisticalanalysis.
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Electrical Characteristics 5.0V(1)(2) (continued)
ThefollowingspecificationsapplyforV =5.0V,T =25°C,allvolumecontrolssetto0dB,unlessotherwisespecified.
DD A
LM49120 Units
Parameter TestConditions
Typ(3) Limits(4) (Limits)
V =200mV ;f =217Hz,R =8Ω
RIPPLE PP RIPPLE L
(Speaker);R =32Ω(Headphone)
L
C =2.2µF,BTL
B
AllaudioinputsterminatedtoGND;outputreferred
SpeakerOutput;SpeakerOutputGain6dB
SpeakerAmplifier;Mode1 69 dB
SpeakerAmplifier;Mode2 60 dB
SpeakerAmplifier;Mode3 58 dB
SpeakerAmplifierOutput;SpeakerOutputGain0dB
SpeakerAmplifier;Mode1 84 dB
PSRR PowerSupplyRejectionRatio
SpeakerAmplifier;Mode2 63 dB
SpeakerAmplifier;Mode3 62 dB
HeadphoneAmplifierOutput
HeadphoneAmplifier;SE,Mode4 75 dB
HeadphoneAmplifier;SE,Mode8 75 dB
HeadphoneAmplifier;SE,Mode12 72 dB
HeadphoneAmplifier;OCL,Mode4 75 dB
HeadphoneAmplifier;OCL,Mode8 75 dB
HeadphoneAmplifier;OCL,Mode12 72 dB
VOL VolumeControlStepSizeError ±0.2 dB
∈
–91 dB
MaximumAttenuation –86
–81 dB
VOL DigitalVolumeControlRange
RANGE
dB
MaximumGain 18
dB
A HP(SE)MuteAttenuation OutputMode1,2,3 96 dB
u(HP)
kΩ
Maximumgainsetting 12.5
MONO_INInputImpedance kΩ
Z
IN LINandRINInputImpedance kΩ
Maximumattenuationsetting 110
kΩ
f=217Hz,V =1V ,
CM PP
Speaker,BTL,Mode1,
61 dB
R =8Ω
L
DifferentialInput
CMRR Common-ModeRejectionRatio
f=217Hz,V =1V ,
CM PP
Headphone,OCL,Mode4,
66 dB
R =32Ω
L
StereoInput
Headphone;P =12mW
OUT –54 dB
f=1kHz,OCL,Mode8
X Crosstalk
TALK
Headphone;P =12mW
OUT –72 dB
f=1kHz,SE,Mode8
C =4.7μF,OCL 28 ms
B
C =2.2μF,SE,
B
NormalTurnOnMode 151 ms
Turn_On_Time=1
T Wake-UpTimefromShutdown
WU
C =2.2μF,OCL 25 ms
B
C =4.7μF,SE,
B
FastTurnOnMode 168 ms
Turn_On_Time=0
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I2C Timing Characteristics 2.2V ≤ I2C_V ≤ 5.5V(1)(2)
DD
ThefollowingspecificationsapplyforV =5.0Vand3.3V,T =25°C,2.2V≤I2C_V ≤5.5V,unlessotherwisespecified.
DD A DD
LM49120 Units
Parameter TestConditions
Typ(3) Limits (4) (Limits)
t I2CClockPeriod 2.5 µs(min)
1
t I2CDataSetupTime 100 ns(min)
2
t I2CDataStableTime 0 ns(min)
3
t StartConditionTime 100 ns(min)
4
t StopConditionTime 100 ns(min)
5
t I2CDataHoldTime 100 ns(min)
6
V I2CInputVoltageHigh 0.7xI2CV V(min)
IH DD
V I2CInputVoltageLow 0.3xI2CV V(max)
IL DD
(1) “AbsoluteMaximumRatings”indicatelimitsbeyondwhichdamagetothedevicemayoccur,includinginoperabilityanddegradationof
devicereliabilityand/orperformance.Functionaloperationofthedeviceand/ornon-degradationattheAbsoluteMaximumRatingsor
otherconditionsbeyondthoseindicatedintheRecommendedOperatingConditionsisnotimplied.TheRecommendedOperating
Conditionsindicateconditionsatwhichthedeviceisfunctionalandthedeviceshouldnotbeoperatedbeyondsuchconditions.All
voltagesaremeasuredwithrespecttothegroundpin,unlessotherwisespecified.
(2) TheElectricalCharacteristicstableslistspacifiedspecificationsunderthelistedRecommendedOperatingConditionsexceptas
otherwisemodifiedorspecifiedbytheElectricalCharacteristicsConditionsand/orNotes.Typicalspecificationsareestimationsonlyand
arenotensured
(3) TypicalvaluesrepresentmostlikelyparametricnormsatT =+25ºC,andattheRecommendedOperationConditionsatthetimeof
A
productcharacterizationandarenotensured.
(4) Datasheetmin/maxspecificationlimitsareensuredbytestorstatisticalanalysis.
I2C Timing Characteristics 1.7V ≤ I2C_V ≤ 2.2V(1)(2)
DD
ThefollowingspecificationsapplyforV =5.0Vand3.3V,T =25°C,1.7V≤I2C_V ≤2.2V,unlessotherwisespecified.
DD A DD
LM49120 Units
Parameter TestConditions
Typ(3) Limits (4) (Limits)
t I2CClockPeriod 2.5 µs(min)
1
t I2CDataSetupTime 250 ns(min)
2
t I2CDataStableTime 0 ns(min)
3
t StartConditionTime 250 ns(min)
4
t StopConditionTime 250 ns(min)
5
t I2CDataHoldTime 250 ns(min)
6
V I2CInputVoltageHigh 0.7xI2CV V(min)
IH DD
V I2CInputVoltageLow 0.3xI2CV V(max)
IL DD
(1) “AbsoluteMaximumRatings”indicatelimitsbeyondwhichdamagetothedevicemayoccur,includinginoperabilityanddegradationof
devicereliabilityand/orperformance.Functionaloperationofthedeviceand/ornon-degradationattheAbsoluteMaximumRatingsor
otherconditionsbeyondthoseindicatedintheRecommendedOperatingConditionsisnotimplied.TheRecommendedOperating
Conditionsindicateconditionsatwhichthedeviceisfunctionalandthedeviceshouldnotbeoperatedbeyondsuchconditions.All
voltagesaremeasuredwithrespecttothegroundpin,unlessotherwisespecified.
(2) TheElectricalCharacteristicstableslistspacifiedspecificationsunderthelistedRecommendedOperatingConditionsexceptas
otherwisemodifiedorspecifiedbytheElectricalCharacteristicsConditionsand/orNotes.Typicalspecificationsareestimationsonlyand
arenotensured
(3) TypicalvaluesrepresentmostlikelyparametricnormsatT =+25ºC,andattheRecommendedOperationConditionsatthetimeof
A
productcharacterizationandarenotensured.
(4) Datasheetmin/maxspecificationlimitsareensuredbytestorstatisticalanalysis.
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Typical Performance Characteristics
FilterBW=22kHz
Crosstalk Crosstalk
vs vs
Frequency Frequency
V =3.3V,R =32Ω,P =12mW, V =3.3V,R =32Ω,P =12mW,
DD L O DD L O
f=1kHz,Mode8,OCL f=1kHz,Mode8,SE
0 0
-10 -10
-20 -20
-30 -30
B) B)
d -40 d -40
K ( K (
AL -50 AL -50
OSST -60 Right to Left OSST -60 Right to Left
R R
C -70 Left to Right C -70 Left to Right
-80 -80
-90 -90
-100 -100
20 200 2k 20k 20 200 2k 20k
FREQUENCY (Hz) FREQUENCY (Hz)
Figure4. Figure5.
Crosstalk Crosstalk
vs vs
Frequency Frequency
V =5V,R =32Ω,P =30mW, V =5V,R =32Ω,P =30mW,
DD L O DD L O
f=1kHz,Mode8,OCL f=1kHz,Mode8,SE
0 0
-10 -10
-20 -20
-30 -30
ALK (dB) --5400 ALK (dB) --5400
OSST -60 Right to Left OSST -60 Right to Left
CR -70 Left to Right CR -70 Left to Right
-80 -80
-90 -90
-100 -100
20 200 2k 20k 20 200 2k 20k
FREQUENCY (Hz) FREQUENCY (Hz)
Figure6. Figure7.
OutputPower OutputPower
vs vs
SupplyVoltage SupplyVoltage
V =3.3V,R =32Ω V =5V,R =8Ω
DD L DD L
f=1kHz,Mode8,OCL f=1kHz,Mode1,Speaker
140 2500
120
2000
W) 100 W)
m m
ER ( 60 THD+N = 10% ER ( 1500
W W
O O THD+N = 10%
T P 40 T P 1000
U U
P P
UT 20 UT
O THD+N = 1% O THD+N = 1%
500
10
0 0
2.5 3.0 3.5 4.0 4.5 5.0 5.5 2.5 3.0 3.5 4.0 4.5 5.0 5.5
SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V)
Figure8. Figure9.
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