Applied Surface Science 2004: Vol 234 Index

2004·3.5 MB·English

Applied Surface Science 234 (2004) I-VII
www.elsevier.com/ locate/apsusc
Author Index
Abad, J., C. Rogero, J. Méndez, M.F. Lopez, Bongiorno, A., and A. Pasquarello, Atomistic
JA. Martin-Gago and E. Roman, Growth of model structure of the Si(1 0 0)-SiO, inter-
subnanometer-thin Si overlayer on TiO, face from a synthesis of experimental data 234 (2004) 190
(1 1.0)-(1 x 2) surface 234 (2004) 497 Bozhko, S.1., A.N. Chaika, G.A. Emelchenko,
Adam, M., see Horvath, Z.J. 234 (2004) 54 V.M. Masalov, A.M. lonov, A.N. Gruzintsev,
Aggarwal, I.D., see Cricenti, A. 234 (2004) 374 G.M. Mikhailov and B.K. Medvedev, Mono-
Akagi, K., S. Tsuneyuki, Y. Yamashita, K. and multilayered opalline superlattices:
Hamaguchi and J. Yoshinobu, Structural application to nanotechnology of 2D ordered
and chemical property of unsaturated cyc- array of nanoobjects and 3D metalattices 234 (2004) 93
lic-hydrocarbon molecules regularly che- Brito-Orta, R.A., see Prutskij, T. 234 (2004) 462
misorbed on Si(0 0 1) surface 234 (2004) 162 Brown, M.R., K.S. Teng, A. Kestle, P. Smow-
Akimoto, K., see Yoshida, Y. 234 (2004) 409 ton, P. Blood, PA. Mawby and S.P. Wilks,
Albuquerque, E.L., see Vasconcelos, M.S. 234 (2004) 33 Study of dual-valley trgnsport across a
Ares, J.R., see Pascual, A. 234 (2004) 355 multiquantum barrier to enhance carrier
Ascolani, H., see Davila, M.E. 234 (2004) 274 confinement 234 (2004) 434
Ascolani, H., see Izquierdo, M. 234 (2004) 468 Bushell, A., see Cabailh, G. 234 (2004) 144
Asensio, M.C., see Davila, M.E. 234 (2004) 274
Asensio, M.C., see Izquierdo, M. 234 (2004) 468 Cabailh, G., J.W. Wells, LT. McGovern, A.R.
Avila, J., see Davila, M.E. 234 (2004) 274 Vearey-Roberts, A. Bushell and D.A.
Avila, J., see Izquierdo, M. 234 (2004) 468 Evans, Synchrotron radiation studies of
Azuma, K., see Hattori, T. 234 (2004) 197 the growth and beam damage of tin-phtha-
locyanine on GaAs(0 0 1)-1 x 6 substrates 234 (2004) 144
Baba, Y., see Nath, K.G. 234 (2004) 234 Cabailh, G., see Vearey-Roberts, A.R. 234 (2004) 131
Baba, Y., T. Sekiguchi, |. Shimoyama and Caetano, E.W.S., V.N. Freire, G.A. Farias and
K.G. Nath, Electronic structures of E.F. da Silva Jr., Optical properties of zinc-
ultra-thin silicon carbides deposited on blende GaN/BN cylindrical nanowires 234 (2004) 50
graphite 234 (2004) 246 Cerrillo, 1., see Vearey-Roberts, A.R. 234 (2004) 131
Bachir Bouiadjra, N., see Petit, M. 234 (2004) 451 Chaika, A.N., see Bozhko, S.1. 234 (2004) 93
Bae, C., and G. Lucovsky, Reductions in inter- Chandola, S., see Fleischer, K. 234 (2004) 302
face defects, D,,, by post-oxidation plasma- Chiussi, S., see Lopez, E. 234 (2004) 422
assisted nitridation of GaN—SiO, interfaces Cho, N.-H., see Kim, D.-A. 234 (2004) 256
in MOS devices 234 (2004) 475 Cho, N.-H., see Park, M.-B. 234 (2004) 78
Bakarov, A.K., see Milekhin, A.G. 234 (2004) 45 Cho, N.-H., see Park, M.-B. 234 (2004) 487
Baldacchini, G., see Cricenti, A. 234 (2004) 374 Cho, N.-H., see Shim, J.-H. 234 (2004) 268
Barber, Z.H., see Yan, J. 234 (2004) 328 Chrost, J., see Izquierdo, M. 234 (2004) 468
Bechstedt, F., see Preuss, M. 234 (2004) 155 Combellas, C., see NeSpirek, S. 234 (2004) 395
Bekkali, A., see Kampen, T. 234 (2004) 313 Congiu-Castellano, A., see Cricenti, A. 234 (2004) 374
Bekkali, A.-E.-H., |. Thurzo, T.U. Kampen and Cricenti, A., Longo, G., Ustione, A., Mussi, V.,
D.R.T. Zahn, Impedance spectroscopy Generosi, R., Luce, M., Rinaldi, M., Per-
study of metal—organic—metal structures 234 (2004) 149 fetti, P.. Vobornik, D., Margaritondo, G..,
Benamara, Z., see Petit, M. 234 (2004) 451 Sanghera, J.S., Thielen, P., Aggarwal, L.D.,
Bernholc, J., see Fleischer, K. 234 (2004) 302 Ivanov, B., Miller, J.K., Haglund, R., Tolk,
Bideux, L., see Petit, M. 234 (2004) 451 N.H., Congiu-Castellano, A., Rizzo, M.A.,
Biel, B., see Kampen, T. 234 (2004) 341 Piston, D.W., Somma, F., Baldacchini, G.,
Bila, R.V., see Semchuk, O. Yu. 234 (2004) 415 Bonfigli, F., Marolo, T., Flora, F., Monter-
Blood, P., see Brown, M.R. 234 (2004) 434 eali, R.M., Faenov, A. and T. Pikuz, Optical
Bolognesi, A., see Kampen, T. 234 (2004) 313 nanospectroscopy applications in material
Bonfigli, F., see Cricenti, A. 234 (2004) 374 science 234 (2004) 374
doi: 10.1016/S0169-4332(04)01 140-7
Author Index
da Silva Jr., ., see Caetano, E.W.S. 234 (2004) 50 Ferrer, I.J., see Pascual, A. 234 (2004) 355
da Silva Jr., ., see de Azevedo, W.M. 234 (2004) 457 Fitzgerald, A.G., see Romero, J.S. 234 (2004) 369
da Silva Jr., .. see de Sousa, J.S. 234 (2004) 218 Fleischer, K., S. Chandola, N. Esser, W. Rich-
da Silva Jr., E.F., see Vasconcelos, M.S. 234 (2004) 33 ter, J.F. McGilp, W.G. Schmidt, S. Wang,
Das, A., see Kampen, T.U. 234 (2004) 333 W. Lu and J. Bernholc, Atomic indium
Davila, M.E., J. Avila, H. Ascolani, G. Le Lay, nanowires on Si(1 1 1): the (4 x 148 x
M. Géthelid, U.O. Karlsson and M.C. Asen- 2) phase transition studied with reflectance
sio, Surface phase transitions at interfaces: anisotropy spectroscopy 234 (2004) 302
metal—semiconductor: a revisit is needed 234 (2004) 274 Flora, F., see Cricenti, A. 234 (2004) 374
Davila, M.E., see Izquierdo, M. 234 (2004) 468 Flores, F., and J.L. de Seqovia, Foreword 234 (2004) =I
Diiweritz, L., see Moreno, M. 234 (2004) 16 Flores, F., see Kaminski, W. 234 (2004) 286
Diaz-Arencibia, P., see Prutskij, T. 234 (2004) 462 Flores, F., see Kampen, T. 234 (2004) 341
de Azevedo, W.M., D.D. de Carvalho, E.A. de Flores, F., see Vazquez, H. 234 (2004) 107
Vasconcelos and E.F. da Silva Jr., Photo- Fornarini, L., see Lopez, E. 234 (2004) 422
luminescence characteristics of rare earth- Frauenheim, Th., see Sziics, B. 234 (2004) 173
doped nanoporous aluminum oxide 234 (2004) 457 Freire, J.A.K., see Oliveira, C.L.N. 234 (2004) 38
de Carvalho, D.D., see de Azevedo, W.M. 234 (2004) 457 Freire, V.N., see Caetano, E.W.S. 234 (2004) 50
de Segovia, J.L., see Flores, F. 234 (2004) 1 Freire, V.N., see de Sousa, J.S. 234 (2004) 218
de Sousa, J.S., V.N. Freire and E.F. da Silva Jr., Freire, V.N., see Oliveira, C.L.N. 234 (2004) 38
&(r) type model for interface defects in Si/ Freire, V.N., see Vasconcelos, M.S. 234 (2004) 33
SiO, nanocrystals 234 (2004) 218 Friedrich, M., see Silaghi, S.D. 234 (2004) 113
de Vasconcelos, E.A., see de Azevedo, W.M. 234 (2004) 457 Fritsche, R., B. Jaeckel, A. Klein and W. Jae-
Di Carlo, A., see Kampen, T. 234 (2004) 313 germann, High-resolution photoemission
Dozsa, L., G. Molnar, Z.J. Horvath, A.L. Toth, study of the Si(111)/Au interface and its
J. Gyulai, V. Raineri and F. Giannazzo, modification by a GaSe van der Waals
Investigation of the morphology and elec- termination layer 2004) 321
trical characteristics of FeSi. quantum dots Fulton, C., see Hinkle, C.L. 2004) 240
on silicon 234 (2004) 60 Funatsu, T., see Tanii, T. 2004) 102
Dozsa, L., see Horvath, Z.J. 234 (2004) 67
Dulot, F., see Kraus, A. 234 (2004) 307 Galzerani, J.C., see Milekhin, A.G. 2004) 45
Dulot, F., see Wulfhekel, W. 234 (2004) 251 Gavrila, G., H. Méndez, T.U. Kampen and
D.R.T. Zahn, Changes in the electronic
Ebest, G., see K6nig, D. 234 (2004) 222 structure of DiMePTCDI films on S-
Emelchenko, G.A., see Bozhko, S.I. 234 (2004) 93 GaAs(1 0 0) upon exposure to oxygen 234 (2004) 126
Emoto, T., see Yoshida, Y. 234 (2004) 409 Generosi, R., see Cricenti, A. 234 (2004) 374
Esser, N., see Fleischer, K. 234 (2004) 302 Giannazzo, F., see Dozsa, L. 234 (2004) 60
Evans, D.A., see Cabailh, G. 234 (2004) 144 Ginev, G., T. Riedl, R. Parashkov, H.-H.
Evans, D.A., see Vearey-Roberts, A.R. 234 (2004) 131 Johannes and W. Kowalsky, Organic-GaAs
Evans, S., see Vearey-Roberts, A.R. 234 (2004) 131 heterostructure diodes for microwave appli-
Evtukh, A.A., see Litovchenko, V.G. 234 (2004) 262 cations 234 (2004) 22
Gonzalez, P., see Lopez, E. 234 (2004) 422
Fabbri, F., see Lopez, E. 234 (2004) 422 Gorbanyuk, T.1., see Litovchenko, V.G. 234 (2004) 262
Faenov, A., see Cricenti, A. 234 (2004) 374 Gorgoi, M., W. Michaelis, T.U. Kampen, D.
Farias, G.A., see Caetano, E.W.S. 234 (2004) 50 Schlettwein and D.R.T. Zahn, Thickness
Farias, G.A., see Oliveira, C.L.N. 234 (2004) 38 dependence of the LUMO position for
Ferkel, H.S., Owen, G.T., T.G.G. Maffeis, M. phthalocyanines on hydrogen passivated
Penny, K.S. Teng and S.P. Wilks, Macro- silicon (1 1 1) 234 (2004) 138
scopic and microscopic investigations of Gothelid, M., see Davila, M.E. 234 (2004) 274
the effect of gas exposure on nanocrystal- Gruzintsev, A.N., see Bozhko, S.1. 234 (2004) 93
line SnO, at elevated temperature 234 (2004) 82 Gruzza, B., see Petit, M. 234 (2004) 451
Ferkel, H.S., T.G.G. Maffeis, G.T. Owen, M. Gyulai, J., see Dézsa, L. 234 (2004) 60
Penny and S.P. Wilks. STM patterning of
SnO, nanocrystalline surfaces 234 (2004) 2 Haglund, R., see Cricenti, A. 234 (2004) 374
Ferraz, A.C., and R. Miotto, Adsorption and Hajnal, Z., see Sziics, B. 234 (2004) 173
decomposition of acetone on Si(0 0 1) 234 (2004) 185 Hamaguchi, K., see Akagi, K. 234 (2004) 162
Ferrer, D., T. Shinada, T. Tanii, J. Kurosawa, G. Han, K.-H., see Park, M.-B. 234 (2004) 78
Zhong, Y. Kubo, S. Okamoto, H. Kawarada Hanbiicken, M., see Kraus, A. 234 (2004) 307
and I. Ohdomari, Selective growth of car- Hanbiicken, M., see Wulfhekel, W. 234 (2004) 251
bon nanostructures on nickel implanted Hasegawa, H., see Hashizume, T. 234 (2004) 387
nanopyramid array 234 (2004) 72 Hasegawa, H., see Sato, T. 234 (2004) 11
Author Index
Hashizume, T., and H. Hasegawa, Effects of Johannes, H.-.H., see Ginev, G. 234 (2004) 22
nitrogen deficiency on electronic properties Joumori, S., see Nohira, H. 234 (2004) 493
of AlGaN surfaces subjected to thermal and
plasma processes 234 (2004) 387 Kahn, A., see Vazquez, H. 234 (2004) 107
Hattori, T., K. Azuma, Y. Nakata, M. Shioji, T. Kaminski, W., P. Jelinek, R. Pérez, F. Flores and
Shiraishi, T. Yoshida, K. Takahashi, H. J. Ortega, Si-substitutional defects on the +-
Nohira, Y. Takata, S. Shin and K. Kobaya- Sn/Si(1 1 1)-(.V3 « V3) surface 234 (2004) 286
shi, Dependence of SiO,/Si interface struc- Kampen, T., A. Bekkali, 1. Thurzo, D.R.T.
ture on low-temperature oxidation process 234 (2004) 197 Zahn, A. Bolognesi, T. Ziller, A. Di Carlo
Hattori, T., see Hirose, K. 234 (2004) 202 and P. Lugli, Barrier heights of organic
Hattori, T., see Nohira, H. 234 (2004) 493 modified Schottky contacts: theory and
Heyes, C.D., see Kobitski, A. Yu. 234 (2004) 86 experiment 234 (2004) 313
Hinkle, C.L., C. Fulton, R.J. Nemanich and G. Kampen, T., A. Schiiller, D.R.T. Zahn, B. Biel,
Lucovsky, Enhanced tunneling in stacked J. Ortega, R. Pérez and F. Flores, Schottky
gate dielectrics with ultra-thin HfO, layers contacts on passivated GaAs(1 00) sur-
sandwiched between thicker SiO, layers 234 (2004) 240 faces: barrier height and reactivity 234 (2004) 341
Hinkle, C.L., see Lucovsky, G. 234 (2004) 429 Kampen, T.U., A. Das, S. Park, W. Hoyer and
Hirose, K., S. Kawashiri and T. Hattori, XPS D.R.T. Zahn, Relation between morphol-
analysis of carrier trapping phenomena in ogy and work function of metals deposited
ultrathin SiO, film formed on Si substrate 234 (2004) 202 on organic substrates 234 (2004) 333
Hong, J.G., see Lucovsky, G 234 (2004) 429 Kampen, T.U., see Bekkali, A.-E.-H. 234 (2004) 149
Horvath, Z.J.. L. Doézsa, O.H. Krafesik, T. Kampen, T.U., see Gavrila, G. 234 (2004) 126
Mohacsy and G.y. Vida, Electrical beha- Kampen, T.U., see Gorgoi, M. 234 (2004) 138
viour of Al/SiO,/Si structures with SiC Kampen, T.U., see Paez, B.A. 234 (2004) 168
nanocrystals 234 (2004) Kampen, T.U., see Salvan, G. 234 (2004) 178
Horvath, Z.J., M. Adam, I. Szab6, L.K. Orlov, Kampen, T.U., see Silaghi, S.D. 234 (2004) 113
A.V. Potapov and V.A. Tolomasov, Electri- Kang, D., see Lucovsky, G. 234 (2004) 429
cal behaviour of Al/SiGe/Si_ heterostruc- Kappers, M.J., see Yan, J. 234 (2004) 328
tures: effect of surface treatment and Karlsson, U.O., see Davila, M.E. 234 (2004) 274
dislocations 234 (2004) 54 Karlsteen, M., see Semchuk, O. Yu. 234 (2004) 415
Horvath, Z.J., see Dozsa, L. 234 (2004) 60 Kashiwagi, I., see Nohira, H. 234 (2004) 493
Horvath, Z.J., see Osvald, J. 234 (2004) 349 Kawarada, H., see Ferrer, D. 234 (2004) 72
Hosaka, T., see Tanii, T. 234 (2004) 102 Kawashiri, S., see Hirose, K. 234 (2004) 202
Hoyer, W., see Kampen, T.U. 234 (2004) 333 Kestle, A., see Brown, MLR. 234 (2004) 434
Huang, S., Y. Tian and F. Lu, Investigation on Kikuchi, S., see Yoshida, Y. 234 (2004) 409
the barrier height and phase transformation Kim, D.-A., J.-H. Shim and N.-H. Cho, PL and
of nickel silicide Schottky contact 234 (2004) 362 EL features of p-type porous silicon pre-
Humphreys, CJ., see Yan, J. 234 (2004) 328 pared by electrochemical anodic etching 234 (2004) 256
Kimura, K., see Nohira, H. 234 (2004) 493
Ichimiya, A., see Nakahara, H. 234 (2004) 292 Klein, A., see Fritsche, R. 234 (2004) 321
Im, S., see Shim, J.-H. 234 (2004) 268 Kobayashi, K., see Hattori, T. 234 (2004) 197
lonov, A.M., see Bozhko, S.1. 234 (2004) 93 Kobitski, A.Yu., C.D. Heyes and G.U. Nien-
Itagaki, K., see Yoshida, Y. 234 (2004) 409 haus, Total internal reflection fluorescence
Ivanov, B., see Cricenti, A. 234 (2004) 374 microscopy—a powerful tool to study sin-
Ivanov, S.V., see Sitnikova, A.A. 234 (2004) 28 gle quantum dots 234 (2004) 86
Iwai, H., see Nohira, H. 234 (2004) 493 Konig, D., D.R.T. Zahn and G. Ebest, Field
Izquierdo, M., M.E. Davila, C.M. Teodorescu, effect of fixed negative charges on oxidized
J. Chrost, H. Ascolani, J. Avila and silicon induced by AIF, layers with fluorine
M.C. Asensio, Influence of the substrate deficiency 234 (2004) 222
surface termination on the properties of Konnikov, S.G., see Sitnikova, A.A. 234 (2004) 28
bee-cobalt films: GaAs(1 1 0) versus Sb/ Kosch, U., see Lopez, E. 234 (2004) 422
GaAs(1 1 0) 234 (2004) 468 Kosel, T., see Prutskij, T. 234 (2004) 462
Kowalsky, W., see Ginev, G. 234 (2004) 22
Jaeckel, B., see Fritsche, R. 234 (2004) 321 Krafesik, O.H., see Horvath, Z.J. 234 (2004) 67
Jaegermann, W., see Fritsche, R. 234 (2004) 321 Kraus, A., H. Neddermeyer, W. Wulfhekel, D.
Jelinek, P., see Kaminski, W. 234 (2004) 286 Sander, T. Maroutian, F. Dulot, A. Marti-
Jiménez-Rodriguez, J.J... see Mari Carmen nez-Gil and M. Hanbiicken, Comparison of
Pérez-Martin, A. 234 (2004) 228 structural re-organisations observed on pre-
Jiménez-Saez, J.C., see Mari Carmen Pérez- patterned vicinal Si(l 11) and Si(1 00)
Martin, A. 234 (2004) 228 surfaces during heat treatment 234 (2004) 307
IV Author Index
Kubo, Y., see Ferrer, D. 234 (2004) 72 Milekhin, A.G., A.l. Toropov, A.K. Bakarov,
Kurosawa, J., see Ferrer, D. 234 (2004) 72 M. Yu. Ladanov, G. Zanelatto, J.C. Galzerani,
S. Schulze and D.R.T. Zahn, Optical phonons
Ladanov, M.Yu., see Milekhin, A.G. 234 (2004) 45 in InAs and AlAs quantum dot structures 234 (2004) 45
Le Lay, G., see Davila, M.E. 234 (2004) 274 Miller, J.K., see Cricenti, A. 234 (2004) 374
Leon, B., see Lopez, E. 234 (2004) 422 Mintairov, A., see Prutskij? T. 234 (2004) 462
Leycuras, A., see Wulfhekel, W. 234 (2004) 251 Miotto, R., see Ferraz, A.C. 234 (2004) 185
Lifshits, V.G., see Tsukanov, D.A. 234 (2004) 297 Miyake, T., see Tanii, T. 234 (2004) 102
Litovchenko, V.G., T.l. Gorbanyuk, V.S. Mohacsy, T., see Horvath, Z.J. 234 (2004)
Solntsev and A.A. Evtukh, Mechanism Molnar, G., see Dézsa, L. 234 (2004)
of hydrogen, oxygen and humidity Montereali, R.M., see Cricenti, A. 234 (2004) :
sensing by Cu/Pd-porous silicon-silicon Moreno, M., A. Trampert, L. Daweritz and
structures 234 (2004) 262 K.H. Ploog, MnAs nanoclusters embedded
Longo, G., see Cricenti, A. 234 (2004) 374 in GaAs: synthesis and properties 234 (2004)
Lopez, E., S. Chiussi, J. Serra, P. Gonzalez, C. Mussi, V., see Cricenti, A. 234 (2004) 374
Serra, U. Kosch, B. Leon, F. Fabbri, L.
Fornarini and S. Martelli, Growth and mod- Nakahara, H., T. Suzuki and A. Ichimiya, Ag/
ification of thin SiGeC films at low sub- Si(1 1 1)V3 x V3 surface phase transition
strate temperatures through UV laser at low temperature studied by RHEED 234 (2004) 292
assisted processing 234 (2004) 422 Nakajima, K., see Nohira, H. 234 (2004) 493
Lopez, M.F., see Abad, J. 234 (2004) 497 Nakata, Y., see Hattori, T. 234 (2004) 197
Lu, F., see Huang, S. 234 (2004) 362 Namgung, C., see Park, M.-B. 234 (2004) 78
Lu, W., see Fleischer, K. 234 (2004) 302 Namita, H., see Yoshida, Y. 234 (2004) 409
Lublinskaya, O.G., see Sitnikova, A.A. 234 (2004) 28 Nannarone, S., see Sokolov, N.S. 234 (2004) 480
Luce, M., see Cricenti, A. 234 (2004) 374 Natali, F., see Vézian, S. 234 (2004) 445
Lucovsky, G., G.B. Rayner, D. Kang, C.L. Nath, K.G., |. Shimoyama, T. Sekiguchi and Y.
Hinkle and J.G. Hong, A spectroscopic Baba, Study of the oxidation for Si nanos-
study distinguishing between chemical tructures using synchrotron radiation
phase separation with different degrees of photoemission spectroscopy 234 (2004) 234
crystallinity in Hf(Zr) silicate alloys 234 (2004) 429 Nath, K.G., see Baba, Y. 234 (2004) 246
Lucovsky, G., see Bae, C. 234 (2004) 475 Neddermeyer, H., see Kraus, A. 234 (2004) 307
Lucovsky, G., see Hinkle, C.L. 234 (2004) 240 Nemanich, R.J., see Hinkle, C.L. 234 (2004) 240
Lugli, P., see Kampen, T. 234 (2004) 313 NeSpurek, S., J. Sworakowski, C. Combellas,
G. Wang and M. Weiter, A molecular
Maffeis, T.G.G., see Ferkel, H.S. 234 (2004) 2 device based on light controlled charge
Maffei, T.G.G., see Ferkel, H.S. 234 (2004) 82 carrier mobility 234 (2004) :
Margaritondo, G., see Cricenti, A. 234 (2004) 374 Nienhaus, G.U., see Kobitski, A. Yu. 234 (2004)
Mari Carmen Pérez-Martin, A., J.J. Jiménez- Nitsche, S., see Wulfhekel, W. 234 (2004)
Rodriguez and J.C. Jiménez-Saez, Shallow Nohira, H., see Hattori, T. 234 (2004) 197
boron dopant on silicon. An MD study 234 (2004) 228 Nohira, H., T. Shiraishi, K. Takahashi, T. Hat-
Marolo, T., see Cricenti, A. 234 (2004) 374 tori, I. Kashiwagi, C. Ohshima, S. Ohmi, H.
Maroutian, T., see Kraus, A. 234 (2004) 307 Iwai, S. Joumori, K. Nakajima, M. Suzuki
Martelli, S., see Lopez, E. 234 (2004) 422 and K. Kimura, Atomic-scale depth profil-
Martinez-Gil, A., see Kraus, A. 234 (2004) 307 ing of composition, chemical structure and
Martin-Gago, J.A., see Abad, J. 234 (2004) 497 electronic band structure of La,O,/Si(1 0 0)
Masalov, V.M., see Bozhko, S.1. 234 (2004) 93 interfacial transition layer 234 (2004) 493
Massies, J., see Vézian, S. 234 (2004) 445
Matolin, V., see Petit, M. 234 (2004) 451 O'Brien, S., see Vearey-Roberts, A.R. 234 (2004) 131
Mauriz, P.W., see Vasconcelos, M.S. 234 (2004) 33 Ohdomari, I., see Ferrer, D. 234 (2004) 72
Mawby, P.A., see Brown, MLR. 234 (2004) 434 Ohdomari, I., see Tanii, T. 234 (2004) 102
McGilp, J.F., see Fleischer, K. 234 (2004) 302 Ohdomari, |., see Watanabe, T. 234 (2004) 207
McGovern, L.T., see Cabailh, G. 234 (2004) 144 Ohmi, S., see Nohira, H. 234 (2004) 493
McGovern, I.T., see Vearey-Roberts, A.R. 234 (2004) 131 Ohshima, C., see Nohira, H. 234 (2004) 493
Medvedev, B.K., see Bozhko, S.1. 234 (2004) 93 Okamoto, S., see Ferrer, D. 234 (2004) 72
Méndez, H., see Gavrila, G. 234 (2004) 126 Okamura, Y., see Sakaue, H. 234 (2004) 439
Méndez, J., see Abad, J. 234 (2004) 497 Oliveira, C.L.N., J.A.K. Freire, V.N. Freire and
Mendez, J., see Vearey-Roberts, A.R. 234 (2004) 131 G.A. Farias, Inhomogeneous broadening
Merz, J., see Prutskij, T. 234 (2004) 462 arising from interface fluctuations in
Michaelis, W., see Gorgoi, M. 234 (2004) 138 strained In,Ga, _,As/anGd a(IAn,sGa ,_,,As)
Mikhailov, G.M., see Bozhko, S.1. 234 (2004) 93 InP), _,/InP quantum wells 234 (2004) 38
Author Index Vv
Orlov, L.K., see Horvath, Z.J. 234 (2004) 54 Raineri, V., see Dozsa, L. 234 (2004) 60
Ortega, J., see Kaminski, W. 234 (2004) 286 Rayner, G.B., see Lucovsky, G. 234 (20044)2 9
Ortega, J., see Kampen, T. 234 (2004) 341 Richter, W., see Fleischer, K. 234 (2004) 302
Ortega, J., see Vazquez, H. 234 (2004) 107 Riedl, T., see Ginev, G. 234 (2004) 22
Osvald, J., and Z.J. Horvath, Theoretical study Rinaldi, M., see Cricenti, A. 234 (2004) 374
of the temperature dependence of electrical Rizzo, M.A., see Cricenti, A. 234 (20043)7 4
characteristics of Schottky diodes with an Robert-Goumet, Ch., see Petit, M. 234 (20044)5 1
inverse near-surface layer 234 (2004) 349 Rogero, C., see Abad, J. 234 (20044)9 7
Oszwaldowski, R., see Vazquez, H. 234 (2004) 107 Roman, E., see Abad, J. 234 (20044)9 7
Owen, G.T., see Ferkel, H.S. 234 (2004) 2 Romero, J.S., A.G. Fitzgerald and M.J. Rose,
Owen, G.T., see Ferkel, H.S. 234 (2004) 82 A transmission electron microscope study
of metal/chalcogenide amorphous thin
Paez, B., see Salvan, G. 234 (2004) 178 films 234 (2004) 369
Paez, B.A., G. Salvan, S. Silaghi, R. Scholz, Rose, M.J., see Romero, J.S. 234 (2004) 369
T.U. Kampen and D.R.T. Zahn, Raman Ryjkov, S.V., see Tsukanov, D.A. 234 (2004) 297
monitoring of In and Ag growth on PTCDA Rykhova, O.V., see Sitnikova, A.A. 234 (2004) 28
and DiMe-PTCDI thin films 234 (2004)
Parashkov, R., see Ginev, G. 234 (2004) Sakata, O., see Tajiri, H. 234 (2004) 403
Park, M.-B., and N.-H. Cho, Effect of sintering Sakaue, H., Y. Taniguchi, Y. Okamura, S. Shin-
time on the chemical and electrical features gubara and T. Takahagi, Wet treatment for
of the grain boundary of the semiconduct- preparing atomically smooth Si(1 00)
ing SrTiO, ceramics synthesized from sur- wafer surface 234 (2004) 439
face-coated powders 234 (2004) 487 Salvan, G., S. Silaghi, B. Paez, T.U. Kampen
Park, M.-B., K.-H. Han, J.-H. Shim, C. Nam- and D.R.T. Zahn, Modification of
gung and N.-H. Cho, Effect of rare earth GaAs(1 00) surfaces upon adsorption of
ions-doping on the chemical and optical perylene derivatives 234 (2004)
features of nano-crystalline (Er, Tb:) Si thin Salvan, G., see Paez, B.A. 234 (2004)
films 234 (2004) 78 Salvan, G., see Silaghi, $.D. 234 (2004)
Park, S., see Kampen, T.U. 234 (2004) 333 Sanchez, C.R., see Pascual, A. 234 (2004)
Pascual, A., J.R. Ares, LJ. Ferrer and C.R. Sander, D., see Kraus, A. 234 (2004)
Sanchez, Electrical resistance evolution of Sander, D., see Wulfhekel, W. 234 (2004)
Fe thin films during their sulphuration pro- Sanghera, J.S., see Cricenti, A. 234 (2004)
cess 234 (2004) 355 Sanna, S., see Sziics, B. 234 (2004)
Pasquali, L., see Sokolov, N.S. 234 (2004) 480 Sato, T., |. Tamai, S. Yoshida and H. Hasegawa,
Pasquarello, A., see Bongiorno, A. 234 (2004) 190 Evolution mechanism of heterointerface
Penny, M., see Ferkel, H.S. 234 (2004) 2 cross-section during growth of GaAs ridge
Penny, M., see Ferkel, H.S. 234 (2004) 82 quantum wires by selective molecular beam
Pérez, R., see Kaminski, W. 234 (2004) 286 epitaxy 234 (2004) 11
Pérez, R., see Kampen, T. 234 (2004) 341 Schlettwein, D., see Gorgoi, M. 234 (2004) 138
Pérez, R., see Vazquez, H. 234 (2004) 107 Schmidt, W.G., see Fleischer, K. 234 (2004) 302
Perfetti, P., see Cricenti, A. 234 (2004) 374 Schmidt, W.G., see Preuss, M. 234 (2004) 155
Petit, M., Ch. Robert-Goumet, L. Bideux, B. Scholz, R., see Paez, B.A. 234 (2004) 168
Gruzza, Z. Benamara, N. Bachir Bouiadjra Scholz, R., see Silaghi, S.D. 234 (2004) 113
and V. Matolin, Auger electronic spectro- Scholz, R., see Sziics, B. 234 (2004) 173
scopy and electrical characterisation Schiiller, A., see Kampen, T. 234 (2004) 341
of InP(100) surfaces passivated by N)> Schulze, S., see Milekhin, A.G. 234 (2004) 45
plasma 234 (2004) 451 Seino, K., see Preuss, M. 234 (2004) 155
Pikuz, T., see Cricenti, A. 234 (2004) 374 Sekiguchi, T., see Baba, Y. 234 (2004) 246
Piston, D.W., see Cricenti, A 234 (2004) 374 Sekiguchi, T., see Nath, K.G. 234 (2004) 234
Ploog, K.H., see Moreno, M. 234 (2004) 16 Selvaggi, G., see Sokolov, N.S. 234 (2004) 480
Plotnikov, V., see Zamoryarskaya, M.V. 234 (2004) 214 Semchuk, O.Yu., R.V. Bila, M. Willander and
Potapov, A.V., see Horvath, Z.J. 234 (2004) 54 M. Karlsteen, Features of coherent laser
Preuss, M., W.G. Schmidt, K. Seino and F. beams interaction with condensed matter 234 (2004) 415
Bechstedt, Methylchloride adsorbed on Semond, F., see Vézian, S. 234 (2004) 445
Si(0 0 1): an ab initio study 234 (2004) 155 Serra, C., see Lopez, E. 234 (20044)2 2
Prutskij, T., P. Diaz-Arencibia, R.A. Brito-Orta, Serra, J., see Lopez, E. 234 (20044)2 2
A. Mintairov, T. Kosel and J. Merz, Polar- Shim, J.-H., S. Im and N.-H. Cho, Nanostruc-
ization anisotropy in the photolumines- tural features of nc-Si:H thin films prepared
cence from InGaP layers grown by liquid by PECVD 234 (2004) 268
phase epitaxy 234 (2004) 462 Shim, J.-H., see Kim, D.-A. 234 (2004) 256
VI Author Index
Shim, J.-H., see Park, M.-B. 234 (2004) 78 Teodorescu, C.M., see Izquierdo, M. 2004) 468
Shimoyama, I., see Baba, Y. 234 (2004) 246 Thielen, P., see Cricenti, A. 2004) 374
Shimoyama, I., see Nath, K.G. 234 (2004) 234 Thurzo, I., see Bekkali, A.-E.-H. 2004) 149
Shin, S., see Hattori, T. 234 (2004) 197 Thurzo, I., see Kampen, T. 2004) 313
Shinada, T., see Ferrer, D. 234 (2004) 72 Tian, Y., see Huang, S. 2004) 362
Shingubara, S., see Sakaue, H. 234 (2004) 439 Tolk, N.H., see Cricenti, A. 2004) 374
Shioji, M., see Hattori, T. 234 (2004) 197 Tolomasov, V.A., see Horvath, Z.J. 2004) 54
Shiraishi, T., see Hattori, T. 234 (2004) 197 Toropov, A.A, see Sitnikova, A.A. 2004) 28
Shiraishi, T., see Nohira, H. 234 (2004) 493 Toropov, A.L., see Milekhin, A.G. 2004) 45
Silaghi, S., see Paez, B.A. 234 (2004) 168 Toth, A.L., see Dozsa, L. 2004) 60
Silaghi, S., see Salvan, G. 234 (2004) 178 Trampert, A., see Moreno, M. 2004) 16
Silaghi, S.D., R. Scholz, G. Salvan, YJ. Tsukanov, D.A., S.V. Ryjkov, O.A. Utas and
Suzuki, M. Friedrich, T.U. Kampen and V.G. Lifshits, The formation of Si(1 1 1)5 x
D.R.T. Zahn, Metal deposition onto biomo- 2-Au single-domain surface phase by a
lecular layers on silicon surfaces: a study surface diffusion 234 (2004) 297
of interface formation using Raman spec- Tsuneyuki, S., see Akagi, K. 234 (2004) 162
troscopy 234 (2004) 113
Sitnikova, A.A., O.G. Lublinskaya, A.A Toro- Ulin, V.P., see Sokolov, N.S. 234 (2004) 480
pov, O.V. Rykhova, $.G. Konnikov and S.V. Ustione, A., see Cricenti, A. 234 (2004) 374
Ivanov, TEM study of GaAs/GaSb QD Utas, O.A., see Tsukanov, D.A. 234 (2004) 297
heterostructures 234 (2004) 28
Smowton, P., see Brown, M.R. 234 (2004) 434 van Elsbergen, V., C. Weijtens and J. Zaumseil,
Sokolov, N.S., S.M. Suturin, V.P. Ulin, L. Pas- Interaction of caesium with poly(p-pheny-
quali, G. Selvaggi and S. Nannarone, Initial lene vinylene) suffaces 234 (2004) 120
stages of MBE growth and formation of Vasconcelos, M.S., P.W. Mauriz, E.L. Albu-
CaF,/Si(0 0 1) high-temperature interface 234 (2004) 480 querque, E.F. da Silva Jr. and V.N. Freire,
Sokolov, V.1., see Zamoryarskaya, M.V. 234 (2004) 214 Electronic spectra of GaAs/Ga,Al,_,As
Solntsev, V.S., see Litovchenko, V.G. 234 (2004) 262 superlattice with impurities arranged
Somma, F., see Cricenti, A. 234 (2004) 374 according to a Fibonacci sequence 234 (2004) 33
Steiner, H.J., see Vearey-Roberts, A.R. 234 (2004) 131 Vazquez, H., F. Flores, R. Oszwaldowski, J.
Suturin, $.M., see Sokolov, N.S. 234 (2004) 480 Ortega, R. Pérez and A. Kahn, Barrier
Suzuki, M., see Nohira, H. 234 (2004) 493 formation at metal-organic _ interfaces:
Suzuki, T., see Nakahara, H. 234 (2004) 292 dipole formation and the charge neutrality
Suzuki, Y.J., see Silaghi, S.D. 234 (2004) 113 level 234 (2004) 107
Sworakowski, J., see NeSptirek, S. 234 (2004) 395 Vearey-Roberts, A.R., H.J. Steiner, S. Evans, I.
Szabo, L., see Horvath, Z.J. 234 (2004) 54 Cerrillo, J. Mendez, G. Cabailh, S. O’B rien,
Szics, B., Z. Hajnal, R. Scholz, S. Sanna and J.W. Wells, LT. McGovern and D.A. Evans,
Th. Frauenheim, Theoretical study of the Growth and morphology of SnPc films on
adsorption of a PTCDA monolayer on S- the S-GaAs(00 1) surface: a combined
passivated GaAs(1 0 0) 234 (2004) 173 XPS, AFM and NEXAFS study 234 (2004) 131
Vearey-Roberts, A.R., see Cabailh, G. 234 (2004) 144
Tajiri, H., O. Sakata and T. Takahashi, Surface Vézian, S., F. Natali, F. Semond and J. Massies,
X-ray diffraction in transmission geometry 234 (2004) 403 Kinetic roughening during gas-source
Takahagi, T., see Sakaue, H. 234 (2004) 439 molecular-beam epitaxy of gallium nitride 234 (2004) 445
Takahashi, K., see Hattori, T. 234 (2004) 197 Vida, Gy., see Horvath, Z.J. 234 (2004) 67
Takahashi, K., see Nohira, H. 234 (2004) 493 Vobornik, D., see Cricenti, A. 234 (2004) 374
Takahashi, T., see Tajiri, H. 234 (2004) 403
Takata, Y., see Hattori, T. 234 (2004) 197 Wang, G., see NeSpurek, S. 234 (2004) 395
Tamai, I., see Sato, T. 234 (2004) 11 Wang, S., see Fleischer, K. 234 (2004) 302
Taniguchi, Y., see Sakaue, H. 234 (2004) 439 Watanabe, T., D. Yamasaki, K. Tatsumura and
Tanii, T., see Ferrer, D. 234 (2004) 72 1. Ohdomari, Improved interatomic poten-
Tanii, T., T. Hosaka, T. Miyake, G.-J. Zhang, T. tial for stressed Si, O mixed systems 234 (2004) 207
Zako, T. Funatsu and I. Ohdomari, Prefer- Weijten, C, see van Elsbergen, V. 234 (2004) 120
ential immobilization of biomolecules on Weiter, M., see NeSpirek, S. 234 (2004) 395
silicon microstructure array by means of Wells, J.W., see Cabailh, G. 234 (2004) 144
electron beam lithography on organosilane Wells, J.W., see Vearey-Roberts, A.R. 234 (2004) 131
self-assembled monolayer resist 234 (2004) 102 Wilks, S.P., see Brown, M.R. 234 (2004) 434
Tatsumura, K., see Watanabe, T. 234 (2004) 207 Wilks, S.P., see Ferkel, H.S. 234 (2004) 2
Teng, K.S., see Brown, MLR. 234 (2004) 434 Wilks, S.P., see Ferkel, H.S. 234 (2004) 82
Teng, K.S., see Ferkel, H.S. 234 (2004) 82 Willander, M., see Semchuk, O. Yu. 234 (2004) 415
Author Index vil
Wulfhekel, W., D. Sander, S. Nitsche, F. Dulot, Zahn, D.R.T., see Bekkali, A.-E.-H. 234 (2004) 149
A. Leycuras and M. Hanbiicken, Structural Zahn, D.R.T., see Gavrila, G. 234 (2004) 126
reorganisation of vicinal surfaces on 6H- Zahn, D.R.T., see Gorgoi, M. 234 (2004) 138
SiC(0001) induced by hot hydrogen etching 234 (2004) 251 Zahn, D.R.T., see Kampen, T. 234 (2004) 313
Wulfhekel, W., see Kraus, A. 234 (2004) 307 Zahn, D.R.T., see Kampen, T. 234 (2004) 341
Zahn, D.R.T., see Kampen, T.U. 234 (2004) 333
Yamasaki, D., see Watanabe, T. 234 (2004) 207 Zahn, D.R.T., see Konig, D. 234 (2004) 222
Yamashita, Y., see Akagi, K. 234 (2004) 162 Zahn, D.R.T., see Milekhin, A.G. 234 (2004) 45
Yan, J., MJ. Kappers, Z.H. Barber and C.J. Zahn, D.R.T., see Paez, B.A. 234 (2004) 168
Humphreys, Effects of oxygen plasma Zahn, D.R.T., see Salvan, G. 234 (2004) 178
treatments on the formation of ohmic con- Zahn, D.R.T., see Silaghi, $.D. 234 (2004) 113
tacts to GaN 234 (2004) 328 Zako, T., see Tanii, T. 234 (2004) 102
Yoshida, S., see Sato, T. 234 (2004) II Zamoryarskaya, M.V., V.1. Sokolov and V.
Yoshida, T., see Hattori, T. 234 (2004) 197 Plotnikov, Cathodoluminescence study of
Yoshida, Y., K. Akimoto, T. Emoto, S. Kikuchi, Si/SiO, interface structure 234 (2004) 214
K. Itagaki and H. Namita, Lattice distortion Zanelatto, G., see Milekhin, A.G. 234 (2004) 45
due to surface treatment of bias sputtering Zaumseil, J., see van Elsbergen, V. 234 (2004) 120
revealed by extremely asymmetric X-ray Zhang, G.-J., see Tanii, T. 234 (2004) 102
diffraction 234 (2004) 409 Zhong, G., see Ferrer, D. 234 (2004) 72
Yoshinobu, J., see Akagi, K. 234 (2004) 162 Ziller, T., see Kampen, T. 234 (2004) 313
applied
surface science
Applied Surface Science 234 (2004) VIII-XVII
www.elsevier.com/ locate/apsusc
Subject Index
Aluminium Roberts, H.J. Steiner, $. Evans, I. Cerrillo,
J. Mendez, G. Cabailh, S. O’Brien, J.W.
Wells, 1.T. McGovern and D.A. Evans 234 (2004) 131
Optical phonons in InAs and AlAs quantum dot
Mechanism of hydrogen, oxygen and humidity
structures, A.G. Milekhin, A.I. Toropov,
sensing by Cu/Pd-porous silicon-silicon
A.K. Bakarov, M.Yu. Ladanov, G. Zane-
structures, V.G. Litovchenko, T.I. Gorba-
latto, J.C. Galzerani, S$. Schulze and D.R.T.
nyuk, V.S. Solntsev and A.A. Evtukh 234 (2004) 262
Zahn 234 (2004) 45
Growth and modification of thin SiGeC films at
Field effect of fixed negative charges on oxi-
low substrate temperatures through UV
dized silicon induced by AIF, layers with
laser assisted processing, E. Lopez, S.
fluorine deficiency, D. Konig, D.R.T. Zahn
Chiussi, J. Serra, P. Gonzalez, C. Serra,
and G. Ebest 234 (2004) 222
U. Kosch, B. Leon, F. Fabbri, L. Fornarini
Effects of oxygen plasma treatments on the
and S. Martelli 234 (2004) 422
formation of ohmic contacts to GaN, J.
Kinetic roughening during gas-source molecu-
Yan, M.J. Kappers, Z.H. Barber and C.J.
lar-beam epitaxy of gallium nitride, S.
Humphreys 234 (2004) 328
Vézian, F. Natali, F. Semond and J. Massies 234 (2004) 445
Aluminium oxide
Auger electron spectroscopy
Photoluminescence characteristics of rare
Reductions in interface defects, D,, by post-
earth-doped nanoporous aluminum oxide,
oxidation plasma-assisted nitridation of
W.M. de Azevedo, D.D. de Carvalho, E.A.
GaN-SiO, interfaces in MOS devices, C.
de Vasconcelos and E.F. da Silva Jr. 234 (2004) 457
Bae and G. Lucovsky 234 (2004) 475
Antimony
Boron
Influence of the substrate surface termination
on the properties of bec-cobalt films: Shallow boron dopant on silicon. An MD study,
A. Mari Carmen Pérez-Martin, J.J. Jimé-
GaAs(1 10) versus Sb/GaAs(1 10), M.
Izquierdo, M.E. Davila, C.M. Teodorescu, nez-Rodriguez and J.C. Jiménez-Saez 234 (2004) 228
J. Chrost, H. Ascolani, J. Avila and M.C. Optical nanospectroscopy applications in mate-
Asensio 234 (2004) 468 rial science, A. Cricenti, G. Longo, A.
Ustione, V. Mussi, R. Generosi, M. Luce,
M. Rinaldi, P. Perfetti, D. Vobornik, G.
Arsenic Margaritondo, J.S. Sanghera, P. Thielen,
1D. Aggarwal, B. Ivanov, J.K. Miller, R.
Optical phonons in InAs and AlAs quantum dot Haglund, N.H. Tolk, A. Congiu-Castellano,
structures, A.G. Milekhin, A.I. Toropov, M.A. Rizzo, D.W. Piston, F. Somma, G.
A.K. Bakarov, M. Yu. Ladanov, G. Zanelatto, Baldacchini, F. Bonfigli, T. Marolo, F.
J.C. Galzerani, S. Schulze and D.R.T. Zahn 234 (2004) 45 Flora, R.M. Montereali, A. Faenov and T.
Pikuz 234 (2004) 374
Atomic force microscopy
Biological materials
Growth and morphology of SnPc films on the
S-GaAs(00 1) surface: a combined XPS, Metal deposition onto biomolecular layers on
AFM and NEXAFS study, A.R. Vearey- silicon surfaces: a study of interface forma-
doi: 10.1016/S0169-4332(04)01 141-9
Subject Index
tion using Raman spectroscopy, S.D. Sila- Depth profiling
ghi, R. Scholz, G. Salvan, Yu.J. Suzuki, M.
Friedrich, T.U. Kampen and D.R.T. Zahn 234 (2004) 113
Growth and modification of thin SiGeC films at
low substrate temperatures through UV
Carbon laser assisted processing, E. Lopez, S.
Chiussi, J. Serra, P. Gonzalez, C. Serra,
U. Kosch, B. Leon, F. Fabbri, L. Fornarini
Growth and modification of thin SiGeC films at
and S. Martelli 234 (2004) 422
low substrate temperatures through UV
laser assisted processing, E. Lopez, S. Atomic-scale depth profiling of composition,
Chiussi, J. Serra, P. Gonzalez, C. Serra, chemical structure and electronic band
U. Kosch, B. Leon, F. Fabbri, L. Fornarini structure of La,O,/Si(100) interfacial
and S. Martelli 234 (2004) 422 transition layer, H. Nohira, T. Shiraishi,
K. Takahashi, T. Hattori, I. Kashiwagi, C.
Ohshima, S. Ohmi, H. Iwai, S. Joumori, K.
Chemical vapour deposition Nakajima, M. Suzuki and K. Kimura 234 (2004) 493
Doping effects
Nanostructural features of nc-Si:H thin films
prepared by PECVD, J.-H. Shim, S. Im and
N.-H. Cho 234 (2004) 268 Shallow boron dopant on silicon. An MD study,
Growth and modification of thin SiGeC films at A. Mari Carmen Pérez-Martin, J.J. Jimé-
low substrate temperatures through UV nez-Rodriguez and J.C. Jiménez-Saez 234 (2004) 228
laser assisted processing, E. Lopez, S. Photoluminescence characteristics of rare
Chiussi, J. Serra, P. Gonzalez, C. Serra, earth-doped nanoporous aluminum oxide,
U. Kosch, B. Leon, F. Fabbri, L. Fornarini W.M. de Azevedo, D.D. de Carvalho, E.A.
and S. Martelli 234 (2004) 422 de Vasconcelos and E.F. da Silva Jr. 234 (2004) 457
Reductions in interface defects, Dy, by post-
oxidation plasma-assisted nitridation of Electrical properties
GaN-SiO, interfaces in MOS devices, C.
Bae and G. Lucovsky 234 (2004) 475
Theoretical study of the adsorption of a PTCDA
monolayer on S-passivated GaAs(1 0 0), B.
Cobalt Sziics, Z. Hajnal, R. Scholz, S. Sanna and
Th. Frauenheim 234 (2004) 173
Enhanced tunneling in stacked gate dielectrics
Influence of the substrate surface termination
with ultra-thin HfO, layers sandwiched
on the properties of bec-cobalt films:
between thicker SiO, layers, C.L. Hinkle,
GaAs(1 10) versus Sb/GaAs(1 10), M.
C. Fulton, R.J. Nemanich and G. Lucovsky 234 (2004) 240
Izquierdo, M.E. Davila, C.M. Teodorescu,
Effects of oxygen plasma treatments on the for-
J. Chrost, H. Ascolani, J. Avila and M.C.
mation of ohmic contacts to GaN, J. Yan, MJ.
Asensio 234 (2004) 468
Kappers, Z.H. Barber and CJ. Humphreys 234 (2004) 328
Copper Electron diffraction
Thickness dependence of the LUMO position Surface phase transitions at metal—semiconduc-
for phthalocyanines on hydrogen passivated tor interfaces: a revisit is needed, M.E.
silicon (1 1 1), M. Gorgoi, W. Michaelis, Davila, J. Avila, H. Ascolani, G. Le Lay,
T.U. Kampen, D. Schlettwein and D.R.T. M. Géthelid, U.O. Karlsson and M.C.
Zahn 234 (2004) 138 Asensio 234 (2004) 274
Mechanism of hydrogen, oxygen and humidity Influence of the substrate surface termination
sensing by Cu/Pd-porous silicon—silicon on the properties of bec-cobalt films:
structures, V.G. Litovchenko, T.1. Gorba- GaAsi(1 10) versus Sb/GaAs(1 10), M.
nyuk, V.S. Solntsev and A.A. Evtukh 234 (2004) 262 Izquierdo, M.E. Davila, C.M. Teodorescu,
J. Chrost, H. Ascolani, J. Avila and M.C.
Density of state Asensio 234 (2004) 468
Electron microscopy
Barrier formation at metal-organic interfaces:
dipole formation and the charge neutrality
level, H. Vazquez, F. Flores, R. Oszwal- Mechanism of hydrogen, oxygen and humidity
dowski, J. Ortega, R. Pérez and A. Kahn 234 (2004) 107 sensing by Cu/Pd-porous §silicon—silicon
Subject Index
structures, V.G. Litovchenko, T.I. Gorba- GaAs and (In,Ga,_,As),(InP),_,/InP
nyuk, V.S. Solntsev and A.A. Evtukh 234 (2004) 262 quantum wells, C.L.N. Oliveira, J.A.K.
Growth and modification of thin SiGeC films at Freire, V.N. Freire and G.A. Farias 234 (2004) 38
low substrate temperatures through UV Growth and morphology of SnPc films on the
laser assisted processing, E. Lopez, S. S-GaAs(0 0 1) surface: a combined XPS,
Chiussi, J. Serra, P. Gonzalez, C. Serra, AFM and NEXAFS study, A.R. Vearey-
U. Kosch, B. Leon, F. Fabbri, L. Fornarini Roberts, H.J. Steiner, S. Evans, 1. Cerrillo,
and S. Martelli 234 (2004) 422 J. Mendez, G. Cabailh, S. O'Brien, J.W.
Polarization anisotropy in the photoluminescence Wells, L.T. McGovern and D.A. Evans 234 (2004) 131
from InGaP layers grown by liquid phase Theoretical study of the adsorption of a PTCDA
epitaxy, T. Prutskij, P. Diaz-Arencibia, R.A. monolayer on S-passivated GaAsi1 0 0), B.
Brito-Orta, A. Mintairov, T. Kosel and J. Merz 234 (2004) 462 Sziics, Z. Hajnal, R. Scholz, S. Sanna and
Th. Frauenheim 234 (2004) 173
Epitaxy Modification of GaAs(100) surfaces upon
adsorption of perylene derivatives, G. Sal-
Polarization anisotropy in the photolumines- van, S. Silaghi, B. Paez, T.U. Kampen and
cence from InGaP layers grown by liquid D.R.T. Zahn 234 (2004) 178
phase epitaxy, T. Prutskij, P. Diaz-Arenci- Influence of the substrate surface termination
bia, R.A. Brito-Orta, A. Mintairov, T. Kosel on the properties of bec-cobalt films:
and J. Merz 234 (2004) 462 GaAsi(1 10) versus Sb/GaAs(1 10), M.
Izquierdo, M.E. Davila, C.M. Teodorescu,
Etching J. Chrost, H. Ascolani, J. Avila and M.C.
Asensio 234 (2004) 468
PL and EL features of p-type porous silicon
prepared by electrochemical anodic etch- Gallium phosphide
ing, D.-A. Kim, J.-H. Shim and N.-H. Cho 234 (2004) 256
Polarization anisotropy in the photolumines-
Evaporation
cence from InGaP layers grown by liquid
phase epitaxy, T. Prutskij, P. Diaz-Arenci-
Growth and morphology of SnPc films on the bia, R.A. Brito-Orta, A. Mintairov, T. Kosel
S$-GaAs(00 1) surface: a combined XPS, and J. Merz 234 (2004) 462
AFM and NEXAFS study, A.R. Vearey-
Roberts, H.J. Steiner, S. Evans, I. Cerrillo,
Germanium
J. Mendez, G. Cabailh, S. O’Brien, J.W.
Wells, 1.T. McGovern and D.A. Evans 234 (2004) 131
Growth and modification of thin SiGeC films at
Gallium low substrate temperatures through UV
laser assisted processing, E. Lopez, S.
Chiussi, J. Serra, P. Gonzalez, C. Serra,
High-resolution photoemission study of the
U. Kosch, B. Leon, F. Fabbri, L. Fornarini
Si(111)/Au interface and its modification
and S. Martelli 234 (2004) 422
by a GaSe van der Waals termination layer,
R. Fritsche, B. Jaeckel, A. Klein and W.
Jaegermann 234 (2004) 321 Gold
Effects of oxygen plasma treatments on the
formation of ohmic contacts to GaN, J.
Barrier formation at metal-organic interfaces:
Yan, M.J. Kappers, Z.H. Barber and C.J.
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