Applied Surface Science 1992: Vol 60-61 Index

35 Pages·1992·6.8 MB·English

Applied Surface Science 60/61 (1992) 826-834 applied
North-Holland
surface science
Author index
Abe, H., see Toda, F. 60/61 (1992) 729 Bauer, E., Low-energy electron mi-
Adachi, H., see Ichikawa, Y. 60/61 (1992) 749 croscopy of surface processes 60/61 (1992) 350
Afanas’ev, V.V., M.N. Mizerov, S.V. Beeby, J.L., Developments in RHEED
Novikov and N.S. Sokolov, MBE- calculations 60/61 (1992) 405
60/61 (1992) 498
grown fluoride /GaAs(111)B het- Bennett, P.A., see Robinson, I.K.
60/61 (1992) 716
erostructures: control of interfacial Benoit, E., see Fuyjieda, S.
barrier by Eu and Sm insulator dop- Bhat, R., see Kamiya, I. 60/61 (1992) 534
ing 60/61 (1992) 637 Blaudeck, P., see Frauenheim, Th. 60/61 (1992) 281
Aida, T., see Yasunaga, H. 60/61 (1992) 64 Brandt, O., see Tapfer, L. 60/61 (1992) 517
Akazawa, M., see Fujikura, H. 60/61 (1992) 702
Akiyama, A., see Yamauchi, S. 60/61 (1992) 372 Cai, Q., see Dong, S.Z. 60/61 (1992) 342
Akiyama, N., see Yokota, Y. 60/61 (1992) 385 Chang, C.Y., see Vook, R.W. 60/61 (1992) 71
Akutsu, N., see Niwa, M. 60/61 (1992) 39 Chayahara, A., see Kiuchi, M. 60/61 (1992) 760
Akutsu, Y., see Niwa, M. 60/61 (1992) 39 Colas, E., see Kamiya, I. 60/61 (1992) 534
Alvarez, J.C., see Sokolov, N.S. 60/61 (1992) 421 Coleman, R.V., Z. Dai, W.W. McNairy,
Amano, T. and A. Itoh, Surface oxida- C.G. Slough and C. Wang, Surface
tion of Ni-20Cr alloys with small ad- structure and spectroscopy of
ditions of Ce and Si 60/61 (1992) 677 charge-density wave materials using
Anno, T., see Shinjo, T. 60/61 (1992) 798 scanning tunneling microscopy 60/61 (1992) 485
60/61 (1992) 437
Aono, M., see Watanabe, S.
60/61 (1992) 529
Aono, M., see Kuwahara, Y. Dai, Z., see Coleman, R.V. 60/61 (1992) 485
Arisawa, S., T. Fujii, T. Okane and R. Das Sarma, S. and K.E. Khor, Empirical
Yamamoto, AFM investigation of mi- potential approach to the stability and
crostructures of diacetylene Lang- energetics of thin films and surfaces 60/61 (1992) 99
muir—Blodgett films 60/61 (1992) 321 Deguchi, M., M. Kitabatake, T. Hirao, Y.
Armstrong, S.R., see Zhang, J. 60/61 (1992) 215 Mori, J.S. Ma, T. Ito and A. Hiraki,
Asahi, H., see Soni, R.K. 60/61 (1992) 553 Diamond growth on _ carbon-im-
Asahi, H., T. Kohara, R.K. Soni, N. planted silicon 60/61 (1992) 291
Takeyasu, K. Asami, S. Emura and S. DeVries, B., see Robinson, I.K. 60/61 (1992) 498
Gonda, Gas source MEE growth of Dohnomae, H., K. Shintaku, N.
InGaAs /InP superlattices 60/61 (1992) 625 Nakayama and T. Shinjo, Structural
Asami, K., see Soni, R.K. 60/61 (1992) 553 and magnetic properties of Cr/Sb
Asami, K., see Asahi, H. 60/61 (1992) 625 mutilayers 60/61 (1992) 807
Aseev, A.L., see Latyshev, A.V. 60/61 (1992) 397 Doi, T., see Ichikawa, M. 60/61 (1992) 45
Ashikaga, K., M. Ohno, T. Nakamura, H. Dong, S.Z., Q. Cai, P. Liu and A.R. Zhu,
Fukuda and S. Ohno, Improvement Structure and formation of polythio-
of crystallinity of epitaxial Si,_,Ge, phene films studied by scanning tun-
films with SiH, treatment in in-situ neling microscopy 60/61 (1992) 342
rapid thermal chemical vapor deposi-
tion 60/61 (1992) 597 Eimori, N., see Mori, Y. 60/61 (1992) 296
Aspnes, D.E., see Kamiya, I. 60/61 (1992) 534 Emura, S., see Soni, R.K. 60/61 (1992) 553
Avouris, Ph. and I.-W. Lyo, Probing the Emura, S., see Asahi, H. 60/61 (1992) 625
chemistry and manipulating surfaces Eng, P.J., see Robinson, I.K. 60/61 (1992) 498
at the atomic scale with the STM 60/61 (1992) 426 Engel, B.N., M.H. Wiedmann, R.A.
Van Leeuwen, C.M. Falco, L. Wu, N.
Baba, T., see Fujieda, S. 60/61 (1992) 716 Nakayama and T. Shinjo, Influence of
Batra, I.P., A theoretical study of the structure on the magnetic anisotropy
growth of metals on silicon 60/61 (1992) 136 of Co/Pd (001) epitaxial superlattices 60/61 (1992) 776
Applied Surface Science 60/61 (1992) 826-834 applied
North-Holland
surface science
Author index
Abe, H., see Toda, F. 60/61 (1992) 729 Bauer, E., Low-energy electron mi-
Adachi, H., see Ichikawa, Y. 60/61 (1992) 749 croscopy of surface processes 60/61 (1992) 350
Afanas’ev, V.V., M.N. Mizerov, S.V. Beeby, J.L., Developments in RHEED
Novikov and N.S. Sokolov, MBE- calculations 60/61 (1992) 405
60/61 (1992) 498
grown fluoride /GaAs(111)B het- Bennett, P.A., see Robinson, I.K.
60/61 (1992) 716
erostructures: control of interfacial Benoit, E., see Fuyjieda, S.
barrier by Eu and Sm insulator dop- Bhat, R., see Kamiya, I. 60/61 (1992) 534
ing 60/61 (1992) 637 Blaudeck, P., see Frauenheim, Th. 60/61 (1992) 281
Aida, T., see Yasunaga, H. 60/61 (1992) 64 Brandt, O., see Tapfer, L. 60/61 (1992) 517
Akazawa, M., see Fujikura, H. 60/61 (1992) 702
Akiyama, A., see Yamauchi, S. 60/61 (1992) 372 Cai, Q., see Dong, S.Z. 60/61 (1992) 342
Akiyama, N., see Yokota, Y. 60/61 (1992) 385 Chang, C.Y., see Vook, R.W. 60/61 (1992) 71
Akutsu, N., see Niwa, M. 60/61 (1992) 39 Chayahara, A., see Kiuchi, M. 60/61 (1992) 760
Akutsu, Y., see Niwa, M. 60/61 (1992) 39 Colas, E., see Kamiya, I. 60/61 (1992) 534
Alvarez, J.C., see Sokolov, N.S. 60/61 (1992) 421 Coleman, R.V., Z. Dai, W.W. McNairy,
Amano, T. and A. Itoh, Surface oxida- C.G. Slough and C. Wang, Surface
tion of Ni-20Cr alloys with small ad- structure and spectroscopy of
ditions of Ce and Si 60/61 (1992) 677 charge-density wave materials using
Anno, T., see Shinjo, T. 60/61 (1992) 798 scanning tunneling microscopy 60/61 (1992) 485
60/61 (1992) 437
Aono, M., see Watanabe, S.
60/61 (1992) 529
Aono, M., see Kuwahara, Y. Dai, Z., see Coleman, R.V. 60/61 (1992) 485
Arisawa, S., T. Fujii, T. Okane and R. Das Sarma, S. and K.E. Khor, Empirical
Yamamoto, AFM investigation of mi- potential approach to the stability and
crostructures of diacetylene Lang- energetics of thin films and surfaces 60/61 (1992) 99
muir—Blodgett films 60/61 (1992) 321 Deguchi, M., M. Kitabatake, T. Hirao, Y.
Armstrong, S.R., see Zhang, J. 60/61 (1992) 215 Mori, J.S. Ma, T. Ito and A. Hiraki,
Asahi, H., see Soni, R.K. 60/61 (1992) 553 Diamond growth on _ carbon-im-
Asahi, H., T. Kohara, R.K. Soni, N. planted silicon 60/61 (1992) 291
Takeyasu, K. Asami, S. Emura and S. DeVries, B., see Robinson, I.K. 60/61 (1992) 498
Gonda, Gas source MEE growth of Dohnomae, H., K. Shintaku, N.
InGaAs /InP superlattices 60/61 (1992) 625 Nakayama and T. Shinjo, Structural
Asami, K., see Soni, R.K. 60/61 (1992) 553 and magnetic properties of Cr/Sb
Asami, K., see Asahi, H. 60/61 (1992) 625 mutilayers 60/61 (1992) 807
Aseev, A.L., see Latyshev, A.V. 60/61 (1992) 397 Doi, T., see Ichikawa, M. 60/61 (1992) 45
Ashikaga, K., M. Ohno, T. Nakamura, H. Dong, S.Z., Q. Cai, P. Liu and A.R. Zhu,
Fukuda and S. Ohno, Improvement Structure and formation of polythio-
of crystallinity of epitaxial Si,_,Ge, phene films studied by scanning tun-
films with SiH, treatment in in-situ neling microscopy 60/61 (1992) 342
rapid thermal chemical vapor deposi-
tion 60/61 (1992) 597 Eimori, N., see Mori, Y. 60/61 (1992) 296
Aspnes, D.E., see Kamiya, I. 60/61 (1992) 534 Emura, S., see Soni, R.K. 60/61 (1992) 553
Avouris, Ph. and I.-W. Lyo, Probing the Emura, S., see Asahi, H. 60/61 (1992) 625
chemistry and manipulating surfaces Eng, P.J., see Robinson, I.K. 60/61 (1992) 498
at the atomic scale with the STM 60/61 (1992) 426 Engel, B.N., M.H. Wiedmann, R.A.
Van Leeuwen, C.M. Falco, L. Wu, N.
Baba, T., see Fujieda, S. 60/61 (1992) 716 Nakayama and T. Shinjo, Influence of
Batra, I.P., A theoretical study of the structure on the magnetic anisotropy
growth of metals on silicon 60/61 (1992) 136 of Co/Pd (001) epitaxial superlattices 60/61 (1992) 776
Author index 827
Engel, B.N.,, see Falco, C.M. 60/61 (1992) 790 Hashizume, H., see Maeyama, S. 60/61 (1992) 513
Ensinger, W., see Kiuchi, M. 60/61 (1992) 760 Hattori, T., see Miyamoto, A. 60/61 (1992) 660
Haukka, S., see Lakomaa, E.-L. 60/61 (1992) 742
60/61 (1992) 776 Heimlich, C., see Shinoda, Y. 60/61 (1992) 112
Falco, C.M., see Engel, B.N. Heitmann, D., see Tapfer, L. 60/61 (1992) 517
Falco, C.M. and B.N. Engel, MBE growth Hibino, H., see Shinoda, Y. 60/61 (1992) 112
and magneto-optic properties of mag- Hibino, H., see Homma, Y. 60/61 (1992) 479
netic multilayers 60/61 (1992) 790 Hijiya, S., see Karahashi, K. 60/61 (1992) 126
Fan, J.-F. and K. Toyoda, Self-limiting Hirai, M., see Kawamoto, S. 60/61 (1992) 152
behavior of the growth of Al,O; us- Hirai, M., see Yamauchi, S. 60/61 (1992) 372
Floraeisnn,gd sFH.e,,q u0se,ene t iaOlr tevgaap,o rJ . pulses of TMA 6600//6611 ((11999922)) 776356 HHiirraaik,i , M.A,. , sesee e YDoekgoutcah,i ,Y . M. 666000///666111 (((111999999222))) 322899156
FFloonrteezs,, LE..T,. ,s ees eeZ eKgaemnihyaag,e nI,. J. 6600//6611 ((11999922)) 550354 HHHiiirrraaakkoii,,, MAA...,,, ssseeeeee IYMhaoarrraia,,, TYS... 6600//6611 ((11999922)) 30282
Frauenheim, Th. and P. Blaudeck, Hirao, T., see Deguchi, M. 60/61 (1992) 291
Molecular dynamic structure investi-
Hiraoka, Y.S., M. Mashita, T. Tada and
gations of the adsorption and bonding
of C,H,-hydrocarbon molecules/ R. Yoshimura, Ab initio molecular
radicals on a diamond (111) surface 60/61 (1992) 281 otriboni taolf tsetrudtyi aroynb uttyhleprhmoaslp hidneec omposi- 60/61 (1992) 246
Fujieda, S., E. Benoit and T. Baba, Elec-
Hirose, F., M. Suemitsu and N.
trical properties of SiN, /thin-Si-in-
Miyamoto, Silane gas-source atomic
terlayer/GaAs MIS systems ruled by layer epitaxy 60/61 (1992) 592
surface superstructures of GaAs and
crystallinity of Si interlayers 60/61 (1992) 716 Hirota, Y., Y. Homma and K. Sugii,
Fujii, K., see Kiuchi, M. 60/61 (1992) 760 Clean and damage-free GaAs sur-
Fujii, T., see Arisawa, S. 60/61 (1992) 321 faces prepared by ultrasonic running
deionized water treatment 60/61 (1992) 619
Fujikura, H., H. Tomozawa, M. Akazawa
Homma, Y., see Suzuki, M. 60/61 (1992) 460
and H. Hasegawa, Fabrication pro-
Homma, Y., M. Suzuki and H. Hibino,
cess and properties of InGaAs wires
Step band structures on vicinal Si(111)
having Si interface control layers for
Fujirmeumroav,a l H.o, f sFeee rmNia tolreiv,e l A.p inning 6600//6611 ((11999922)) 70825 Homsimunagr, fa ceYs. , csreeea teHdi robtya , DCY . resistive heat- 6600//6611 ((11999922)) 641799
Fukuda, H., M. Yasuda, T. Iwabuchi and
S. Ohno, Characterization of SiO,/ Honda, T. and T. Okano, Anisotropy in
Si(100) interface structure of N,O- surface diffusion of Ga atoms on a
oxynitrided ultrathin SiO, films 60/61 (1992) 359 Ge(001) plane at the apex of a field-
FFFFuuuukrkkuuuudddkaaaa,,,w a,MYH ...,,,S .s,ss eeeeese e eNA NasaOghtnoioosrki,ha,i g ,aA ,A. . M .K . 66660000////66661111 ((((1111999999992222)))) 65608988875 HHHHoooorrrniiigeknkomooo,iss,s hh siiSi,,Y.o. ,n, YYs..es,,tee iep ss SeeKaeein utcoYKh,oai bm,aa Kyg.a Mus.ch hii,, N.H . 6666600000/////6666611111 (((((11111999999999922222))))) 572214626704420
Hosaka, S., see Hosoki, S. 60/61 (1992) 643
Gadiyak, G.V., Yu.N. Morokov and D.N. Hosoki, S., S$. Hosaka and T. Hasegawa,
Mukhin, Simulation of fluorine inter- Surface modification of MoS, using
action with a silicon surface 60/61 (1992) 131 an STM 60/61 (1992) 643
60/61 (1992) 346
Gao, H.J., see Xue, Z.Q.
60/61 (1992) 736
Garcia-Vidal, F.J., see Ortega, J.
60/61 (1992) 553 Ichikawa, M. and T. Doi, Microprobe
Gonda, S., see Soni, R.K.
60/61 (1992) 625 RHEED study of electromigration ef-
Gonda, S., see Asahi, H. 60/61 (1992) 602 fect on Si MBE growth 60/61 (1992) 45
Gotoh, Y., see Nakai, K.
60/61 (1992) 301 Ichikawa, Y., H. Adachi, K. Setsune and
Guntherodt, H.-J., see Maguire, H.G.
K. Wasa, Epitaxial growth of
Bi,Ti;O,, thin films by dual ion-beam
Harbison, J.P., see Kamiya, I. 60/61 (1992) 534 sputtering 60/61 (1992) 749
60/61 (1992) 702
Hasegawa, H., see Fujikura, H. Ihara, S., T. Uda and M. Hirao, Elec-
60/61 (1992) 721
Hasegawa, H., see Tomozawa, H. tronic structure of a dimer—adatom-—
60/61 (1992) 643
Hasegawa, T., see Hosoki, S. stacking-fault model for the Si(111)7
Hashimoto, A., see Saitoh, T. 60/61 (1992) 228 x 7 reconstructed surface 60/61 (1992) 22
828 Author index
Imai, F., H. Kuramochi, K. Kunimori, T. Kawamoto, S., K. Saitoh, M. Hirai, M.
Uchijima, H. Kondoh, H. Shindo, C. Kusaka and M. Iwami, Photoemission
Nishihara, M. Kaise and H. Nozoye, studies of Pd initial adsorption on the
Synthesis of MgO /TiO, superlattices 60/61 (1992) 770 Si(100)2 X 1 surface at room tempera-
Inoue, Y., see Mae, K. 60/61 (1992) 667 ture using synchrotron radiation 60/61 (1992) 152
Inui, T., see Miyamoto, A. 60/61 (1992) 660 Kawazu, A., see Murakami, K. 60/61 (1992) 146
Ishihara, N., see Yamano, K. 60/61 (1992) 754 Kawazu, A., see Sakama, H. 60/61 (1992) 159
Ishizawa, S., see Shinoda, Y. 60/61 (1992) 112 Kawazu, A., see Yoshimura, M. 60/61 (1992) 317
Isshiki, N., see Kobayashi, K. 60/61 (1992) 443 Khor, K.E., see Das Sarma, S. 60/61 (1992) 99
Ito, H., see Kuzuya, M. 60/61 (1992) 416 Kikuchi, H., see Suzuki, Y. 60/61 (1992) 820
Ito, T., see Deguchi, M. 60/61 (1992) 291 Kinoshita, T., Y. Tanaka, K. Sumitomo,
Ito, T., see Mori, Y. 60/61 (1992) 296 F. Shoji, K. Oura and I. Katayama,
Itoh, A., see Amano, T. 60/61 (1992) 677 Hydrogen-induced reconstruction of
Iwabuchi, T., see Fukuda, H. 60/61 (1992) 359 Sid 11 )- 73 -Ag surface studied by
Iwami, M., see Kawamoto, S. 60/61 (1992) 152 TOF-ICISS 60/61 (1992) 183
Iwami, M., see Yamauchi, S. 60/61 (1992) 372 Kinoshita, T., see Tanaka, Y. 60/61 (1992) 195
Iwami, M., see Yokota, Y. 60/61 (1992) 385 Kishida, S., see Yamano, K. 60/61 (1992) 754
Iwasaki, H., see Niwa, M. 60/61 (1992) 39 Kitabatake, M., see Deguchi, M. 60/61 (1992) 291
Iwatsuki, M., S. Kitamura, T. Sato and T. Kitamura, S., see Iwatsuki, M. 60/61 (1992) 580
Sueyoshi, Observation of surface re- Kiuchi, M., A. Chayahara, Y. Horino, K.
construction and nano-fabrication on Fujii, M. Satou and W. Ensinger,
silicon under high temperature using Control of preferentially oriented
a UHV-STM 60/61 (1992) 580 crystal growth of titanium nitride. Ef-
fects of nitrogen adsorption and ion-
60/61 (1992) 380
Jiang, Z.K., see Soga, T. beam irradiation in dynamic mixing
Jimbo, T., see Soga, T. 60/61 (1992) 380 process 60/61 (1992) 760
Joyce, B.A., see Mokler, S.M. 60/61 (1992) 92 Kobayashi, K., Y. Souzu, N. Isshiki and
Joyce, B.A., T. Shitara, A. Yoshinaga, M. Tsukada, Theory of STM images
D.D. Vvedensky, J.H. Neave and J. of monolayer graphite on transition-
Zhang, Elementary processes in the metal surface 60/61 (1992) 443
MBE growth of GaAs 60/61 (1992) 200 Kobayashi, K., see Schimizu, T. 60/61 (1992) 454
Joyce, B.A., see Zhang, J. 60/61 (1992) 215 Kobayashi, N., Y. Kobayashi, Y. Ya-
mauchi and Y. Horikoshi, In-situ op-
Kaabouchi, M., see Maaza, M. 60/61 (1992) 573 tical monitoring of the decomposition
Kaabouchi, M., see Sella, C. 60/61 (1992) 781 process of gaseous sources in metal-
60/61 (1992) 491
Kaise, M., see Shindo, H. organic chemical vapor deposition and
Kaise, M., see Imai, F. 60/61 (1992) 770 atomic layer epitaxy 60/61 (1992) 544
Kamiya, I., D.E. Aspnes, H. Tanaka, L.T. Kobayashi, T., see Yokota, Y. 60/61 (1992) 385
Florez, E. Colas, J.P. Harbison and Kobayashi, Y., see Shinoda, Y. 60/61 (1992) 112
R. Bhat, Real time in situ observation Kobayashi, Y., see Kobayashi, N. 60/61 (1992) 544
of (001)GaAs in OMCVD by re- Kodama, S., see Ueda, K. 60/61 (1992) 178
flectance difference spectroscopy 60/61 (1992) 534 Kohara, T., see Asahi, H. 60/61 (1992) 625
Kamo, M., see Maguire, H.G. 60/61 (1992) 301 Koide, Y., see Ohshima, N. 60/61 (1992) 120
Kanaji, T., see Santo, K. 60/61 (1992) 172 Kok, W.C., Determination of some physi-
Kaneko, R., see Suzuki, M. 60/61 (1992) 460 cal parameters from infrared re-
Kaneko, T., see Mae, K. 60/61 (1992) 667 flectance spectra 60/61 (1992) 559
Karahashi, K., J. Matsuo and S. Hijiya, Kondo, S., see Kuzuya, M. 60/61 (1992) 416
Chlorine molecular beam scattering Kondoh, H., see Shindo, H. 60/61 (1992) 491
study on Si(100)2 x 1: desorption Kondoh, H., see Imai, F. 60/61 (1992) 770
products 60/61 (1992) 126 Krasilnikov, A.B., see Latyshev, A.V. 60/61 (1992) 397
Karasawa, S., see Mitsuhashi, M. 60/61 (1992) 565 Krishnan, R., see Sella, C. 60/61 (1992) 781
60/61 (1992) 183
Katayama, I., see Kinoshita, T. Kudo, K., Y. Ueno, S. Kuniyoshi and K.
Katayama, I., see Tanaka, Y. 60/61 (1992) 195 Tanaka, Effects of organic buffer lay-
Katayama, T., see Suzuki, Y. 60/61 (1992) 820 ers using Langmuir—Blodgett films on
Kawabata, K., see Yoshimura, M. 60/61 (1992) 317 TCNQ film growth 60/61 (1992) 334
Kawabe, M., see Sugaya, T. 60/61 (1992) 251 Kudo, K., see Suzuki, A. 60/61 (1992) 631
Kawaguchi, Y., see Palmer, J.E. 60/61 (1992) 266 Kudoh, Y., see Suzuki, M. 60/61 (1992) 460
Author index
Kunimori, K., see Imai, F. 60/61 (1992) 770 and H. Hashizume, X-ray standing-
Kuniyoshi, S., see Kudo, K. 60/61 (1992) 334 wave analysis of the (NH 4),S,-treated
Kuramochi, H., see Imai, F. 60/61 (1992) 770 GaAs(111)B surface 60/61 (1992) 513
Kusaka, M., see Kawamoto, S. 60/61 (1992) 152 Maguire, H.G., M. Kamo, H.P. Lang and
Kusaka, M., see Yamauchi, S. 60/61 (1992) 372 H.-J. Guntherodt, Surface morphol-
Kusaka, M., see Yokota, Y. 60/61 (1992) 385 ogy determination of LPCVD _ ho-
Kuwahara, M., see Ushioda, S. 60/61 (1992) 448 moepitaxial diamond using scanning
Kuwahara, Y., H. Oyanagi, Y. Takeda, tunnelling and atomic force mi-
H. Yamaguchi and M. Aono, Bond croscopy 60/61 (1992) 301
length relaxation in ultrathin Ga, Makita, Y., see Suzuki, A. 60/61 (1992) 631
In,_,P and InP,As, layers on Mashita, M., see Hiraoka, Y.S. 60/61 (1992) 246
InP(100) 60/61 (1992) 529 Matsumoto, S., S. Yamaga and A.
Kuzuya, M., S. Kondo, H. Ito and A. Yoshikawa, New surface passivation
Noguchi, ESR study on the nature of method for GaAs and its effect on
oxygen plasma-induced surface radi- the initial growth stage of a_het-
cals of Teflon and corresponding per- eroepitaxial ZnSe layer 60/61 (1992) 274
oxy radical reactivity 60/61 (1992) 416 Matsuo, J., see Karahashi, K. 60/61 (1992) 126
Kyuno, K., see Mae, K. 60/61 (1992) 667 McNairy, W.W., see Coleman, R.V. 60/61 (1992) 485
Lage, H., see Tapfer, L. 60/61 (1992) 517 Miki, K., see Morita, Y. 60/61 (1992) 466
Miloche, M., see Sella, C. 60/61 (1992) 781
Lakomaa, E.-L., S$. Haukka and T. Sun-
Minoda, H., Y. Tanishiro, N. Yamamoto
tola, Atomic layer growth of TiO, on
and K. Yagi, Growth of Si on Au
silica 60/61 (1992) 742
deposited Si(111) surfaces studied by
Landman, U. and W.D. Luedtke, Atom-
UHV-REM 60/61 (1992) 107
istic processes of surface and inter-
face formation 60/61 (1992) 1 Mitsuhashi, M., S. Karasawa, S. Ohya
Lang, H.P., see Maguire, H.G. 60/61 (1992) 301 and F. Togashi, Dislocation of epitax-
La Rocca, G.C., see Tapfer, L. 60/61 (1992) 517 ial CVD diamond and the characteri- 60/61 (1992) 565
zation by Raman spectroscopy
Latyshev, A.V., A.B. Krasilnikov and A.L. 60/61 (1992) 813
Miyagawa, T., see Sano, K.
Aseev, Direct REM observation of
Miyamoto, A., T. Hattori and T. Inui,
structural processes on clean silicon
Molecular dynamics simulation of de-
surfaces during sublimation, phase
LLLiieuue,,, t rWPJa...n,,Ks .iss,teei eeo ns eSDeuo aznnugMdk,o ik ,le 'peSirA.tZ.,.a xyS .M. 66660000////66661111 ((((1111999999992222)))) 63334991272 MMiizyeapprmaoorsovtit,ito ci,loeM ns. NN..o,p,n r oscseMeeeg es OsH( Ai1fr0aoon0sfae )s, ’uelsFvtu.r,r a ffaiVcn.eeV . metal 666000///666111 (((111999999222))) 656693027
Liu, W.M., see Xue, Z.Q. 60/61 (1992) 346 Mokler, S.M., W.K. Liu, N. Ohtani and
B.A. Joyce, A reflection high-energy
Louie, S.G., Theory of electronic excita-
electron diffraction study of Si sur-
tions on semiconductor surfaces 60/61 (1992) 13
60/61 (1992) 1 faces during gas source MBE growth
Luedtke, W.D., see Landman, U. 60/61 (1992) 92
from disilane
Lyo, I.-W., see Avouris, Ph. 60/61 (1992) 426 60/61 (1992) 291
Mori, Y., see Deguchi, M.
Ma, J.S., see Deguchi, M. 60/61 (1992) 291 Mori, Y., N. Eimori, J.S. Ma, T. Ito and
Ma, J.S., see Mori, Y. 60/61 (1992) 296 A. Hiraki, Characterizations of
Ma, J.S., see Yara, T. 60/61 (1992) 308 metal/CVD diamond interface for-
60/61 (1992) 346
Ma, Z., see Xue, Z.Q. mation 60/61 (1992) 296
Ma, Z., see Shen, J. 60/61 (1992) 648 Morita, S. and S.H. Park, Plasma poly-
Maaza, M., C. Sella and M. Kaabouchi, merization model in gas-flow type re-
Studies of surface and interface phe- actor 60/61 (1992) 338
nomena by grazing angle neutron re- Morita, Y., K. Miki and H. Tokumoto,
flectometry 60/61 (1992) 573 Atomic scale analyses of HF-treated
Maaza, M., see Sella, C. 60/61 (1992) 781 Si(111) surfaces by STM 60/61 (1992) 466
60/61 (1992) 131
Mae, K., Y. Inoue, K. Kyuno, T. Kaneko Morokov, Yu.N., see Gadiyak, G.V.
60/61 (1992) 131
and R. Yamamoto, Fundamental pro- Mukhin, D.N., see Gadiyak, G.V.
cesses of the epitaxial growth of silver Murakami, K., K. Nishikata, M.
and gold films 60/61 (1992) 667 Yoshimura and A. Kawazu, Struc-
Maeyama, S., M. Sugiyama, M. Oshima, tural studies of Al/Si(100) by LEED 60/61 (1992) 146
H. Sugahara, H. Oigawa, Y. Nannichi Muramatsu, Y., see Scimeca, T. 60/61 (1992) 256
830 Author index
Murayama, M. and T. Nakayama, Elec- growth of Ge films on Si(111)x77
tronic structures of hetero-crystalline surfaces by gas source molecular beam
60/61 (1992) 120
semiconductor superlattices 60/61 (1992) 710 epitaxy
60/61 (1992) 92
Ohtani, N., see Mokler, S.M.
60/61 (1992) 29
Ohtsuka, S., see Oikawa, S.
Nagashima, S., see Ogura, I. 60/61 (1992) 672 Ohya, S., see Mitsuhashi, M. 60/61 (1992) 565
Nagoshi, M. and Y. Fukuda, Chemisorp- Oigawa, H., see Scimeca, T. 60/61 (1992) 256
tion of carbon monoxide on Cr(111) Oigawa, H., see Maeyama, S. 60/61 (1992) 513
studied by XPS, UPS and HREELS 60/61 (1992) 688 Oikawa, S., S. Ohtsuka and M. Tsuda,
Naitoh, M., H. Ohnishi, Y. Ozaki, F. Elementary processes of surface reac-
Shoji and K. Oura, Hydrogen-induced tion in amorphous silicon film growth 60/61 (1992) 29
reordering of the Si(111)- 3 x y3-Al Okada, S., see Yara, T. 60/61 (1992) 308
surface studied by ERDA/LEED 60/61 (1992) 190 Okada, Y., see Sugaya, T. 60/61 (1992) 251
Nakai, K., Y. Gotoh, M. Ozeki and K. Okane, T., see Arisawa, S. 60/61 (1992) 321
Nakajima, GeSi-Si strained layer su- Okano, T., see Honda, T. 60/61 (1992) 260
perlattices grown by low-pressure Okuyama, T., see Shinjo, T. 60/61 (1992) 798
60/61 (1992) 602
CVD Ono, A., K. Tsutsui and S. Furukawa,
60/61 (1992) 602
Nakajima, K., see Nakai, K. Control of rotational twins in a SOI-
60/61 (1992) 372
Nakamura, H., see Yamauchi, S. GaAs film grown on surface modified
Nakamura, T., see Ashikaga, K. 60/61 (1992) 597 fluoride /Si(111) 60/61 (1992) 608
Nakayama, N., see Engel, B.N. 60/61 (1992; 176 Oral, B., see Vook, R.W. 60/61 (1992) 681
60/61 (1992) 807
Nakayama, N., see Dohnomae, H. Ortega, J., R. Rincén, R. Pérez, FJ.
60/61 (1992) 710
Nakayama, T., see Murayama, M. Garcia-Vidal and F. Flores, Schottky
60/61 (1992) 256
Nannichi, Y., see Scimeca, T. barrier formation: Al deposition on
Nannichi, Y., see Maeyama, S. 60/61 (1992) 513 GaAs(110) 60/61 (1992) 736
Natori, A., H. Fujimura and M. Fukuda, Oshima, M., see Scimeca, T. 60/61 (1992) 256
Step structure transformation of Oshima, M., see Maeyama, S. 60/61 (1992) 513
$i(001) surface induced by current II 60/61 (1992) 85 Oura, K., see Shoji, F. 60/61 (1992) 166
Neave, J.H., see Joyce, B.A. 60/61 (1992) 200 Oura, K., see Kinoshita, T. 60/61 (1992) 183
Neave, J.H., see Zhang, J. 60/61 (1992) 215 Oura, K., see Naitoh, M. 60/61 (1992) 190
Nishihara, C., see Shindo, H. 60/61 (1992) 491 Oura, K., see Tanaka, Y. 60/61 (1992) 195
60/61 (1992) 770
Nishihara, C., see Imai, F. Oyanagi, H., Monolayer superlattices and
60/61 (1992) 146
Nishikata, K., see Murakami, K. heterostructures studied by surface-
Nishimori, K., see Yamano, K. 60/61 (1992) 754 sensitive XAFS 60/61 (1992) 522
Nishioka, T., see Shinoda, Y. 60/61 (1992) 112 Oyanagi, H., see Kuwahara, Y. 60/61 (1992) 529
Nishiyama, I., see Uesugi, F. 60/61 (1992) 587 Ozaki, Y., see Naitoh, M. 60/61 (1992) 190
Niwa, M., H. Iwasaki, Y. Watanabe, I. Ozawa, S., see Sasajima, Y. 60/61 (1992) 653
Sumita, N. Akutsu and Y. Akutsu, Ozeki, M., see Nakai, K. 60/61 (1992) 602
Statistical properties of atomic-scale
Si/SiO, interface roughness studied
60/61 (1992) 39
by STM Palmer, J.E., S. Tohno, Y. Kawaguchi
60/61 (1992) 416
Noguchi, A., see Kuzuya, M. and S. Zembutsu, Early stages of het-
60/61 (1992) 637
Novikov, S.V., see Afanas’ev, V.V. eroepitaxial growth of ZnSe on GaAs
60/61 (1992) 491 60/61 (1992) 266
Nozoye, H., see Shindo, H. by MOVPE, MOASE and MBE
60/61 (1992) 770 60/61 (1992) 346
Nozoye, H., see Imai, F. Pang, S., see Xue, Z.Q.
Numata, K., see Tomozawa, H. 60/61 (1992) 721 Pang, S., see Shen, J. 60/61 (1992) 648
60/61 (1992) 338
Park, S.H., see Morita, S.
60/61 (1992) 505
Patel, J.R., see Zegenhagen, J.
Ogura, I., S. Suzuki and S. Nagashima, Pemble, M.E., see Zhang, J. 60/61 (1992) 215
Epitaxial Ag film formation on NaCl Pérez, R., see Ortega, J. 60/61 (1992) 736
crystals in Knudsen gases of Ar 60/61 (1992) 672 Ploog, K., see Tapfer, L. 60/61 (1992) 517
Ohki, Y., see Sasaki, M. 60/61 (1992) 240
Ohnishi, H., see Naitoh, M. 60/61 (1992) 190
Ohno, M., see Ashikaga, K. 60/61 (1992) 597 Rincon, R., see Ortega, J. 60/61 (1992) 736
Ohno, S., see Fukuda, H. 60/61 (1992) 359 Robinson, I.K., P.J. Eng, P.A. Bennett
Ohno, S., see Ashikaga, K. 60/61 (1992) 597 and B. DeVries, Interfacial X-ray os-
Ohshima, N., S. Zaima, Y. Koide, S. cillations during growth of Pd,Si on
60/61 (1992) 498
Tomioka and Y. Yasuda, Initial $i(111)
Author index
60/61 (1992) 172
Saito, S., see Santo, K. clusters on graphite surface with
Saito, Y., see Yoshimura, M. 60/61 (1992) 317 scanning tunneling microscopy 60/61 (1992) 648
Saitoh, K., see Kawamoto, S. 60/61 (1992) 152 Shigekawa, H., see Yoshimura, M. 60/61 (1992) 317
Saitoh, T., A.H ashimoto and M. Tamura, Shimizu, N., see Shinoda, Y. 60/61 (1992) 112
Real-time observation of the compo- Shindo, H., M. Kaise, H. Kondoh, C.
sition variation due to In—Ga replace- Nishihara and H. Nozoye, Crystal
ments at the GaAs/InAs interface by faces of anhydrite (CaSO,) and their
coaxial impact collision ion scattering preferential dissolution in aqueous
spectroscopy 60/61 (1992) 228 solutions studied with AFM 60/61 (1992) 491
Sakama, H. and A. Kawazu, Adsorption Shindo, H., see Imai, F. 60/61 (1992) 770
of gallium on Si(110) surfaces 60/61 (1992) 159 Shinjo, T., see Engel, B.N. 60/61 (1992) 776
Sakamoto, K., see Yasunaga, H. 60/61 (1992) 64 Shinjo, T., H. Yamamoto, T. Anno and
Sano, K. and T. Miyagawa, Microscopic T. Okuyama, Magnetism and magne-
processes in deposition-concurrent toresistance of metallic multilayers 60/61 (1992) 798
surface segregation 60/61 (1992) 813 Shinjo, T., see Dohnomae, H. 60/61 (1992) 807
Santo, K., S. Hongo, S. Saito, T. Urano Shinoda, Y., N. Shimizu, H. Hibino, T.
and T. Kanaji, The difference of the Nishioka, C. Heimlich, Y. Kobayashi,
singlet-triplet conversion efficiency S. Ishizawa, K. Sugii and M. Seki,
between K/Si and K/Ta surfaces Surface structural changes during the
through oxidation process 60/61 (1992) 172 initial growth of Ge on Si(111)7 x 7 60/61 (1992) 112
Sasajima, Y., T. Tsukida, S$. Ozawa and Shintaku, K., see Dohnomae, H. 60/61 (1992) 807
R. Yamamoto, Monte-Carlo simula- Shiraishi, K., First-principles calculation
tion study of the vacuum deposition of the migration energy of a Ga
process 60/61 (1992) 653 adatom on an As-stabilized GaAs
Sasaki, M., S. Yoshida and Y. Ohki, (001) surface 60/61 (1992) 210
Trimethylgallium reaction on_vari- Shitara, T., see Joyce, B.A. 60/61 (1992) 200
ously prepared GaAs(100) surfaces Shoji, F. and K. Oura, Low-energy recoil
studied by mass spectrometry 60/61 (1992) 240 ion spectroscopy studies of H on
Sato, H., Y. Tanishiro and K. Yagi, TEM Si(111)-7 x 7 60/61 (1992) 166
study of Si(111) surfaces 60/61 (1992) 367 Shoji, F., see Kinoshita, T. 60/61 (1992) 183
Sato, K., see Yase, K. 60/61 (1992) 326 Shoji, F., see Naitoh, M. 60/61 (1992) 190
Sato, M., Atomic scale characterization Shoji, F., see Tanaka, Y. 60/61 (1992) 195
of W surface proposed from FEM Slough, C.G., see Coleman, R.V. 60/61 (1992) 485
images of a tip with and without ad- Soga, T., Z.K. Jiang, T. Suzuki, T. Jimbo
sorption 60/61 (1992) 411 and M. Umeno, TEM characteriza-
Sato, T., see Iwatsuki, M. 60/61 (1992) 580 tion of the GaP/Si interface grown
Satou, M., see Kiuchi, M. 60/61 (1992) 760 by MOCVD 60/61 (1992) 380
Schimizu, T., K. Kobayashi and M. Sokolov, N.S., J.C. Alvarez and N.L.
Tsukada, Theoretical approach to the Yakovlev, Fluoride layers and super-
microscopic mechanism of light emis- lattices grown by MBE on Si(111):
sion from a scanning tunneling micro- dynamic RHEED and Sm?* photolu-
scope 60/61 (1992) 454 minescence studies 60/61 (1992) 421
Scimeca, T., Y. Muramatsu, M. Oshima, Sokolov, N.S., see Afanas’ev, V.V. 60/61 (1992) 637
H. Oigawa and Y. Nannichi, Interfa- Soni, R.K., H. Asahi, S. Emura, T.
cial chemistry and stability of sulfur- Watanabe, K. Asami and S. Gonda,
treated GaAs(111)A, 100 and (111)B 60/61 (1992) 256 Raman scattering in GaP/AIP short-
Seki, M., see Shinoda, Y. 60/61 (1992) 112 period superlattices grown by gas
Sella, C., see Maaza, M. 60/61 (1992) 573 source molecular beam epitaxy 60/61 (1992) 553
Sella, C., M. Kaabouchi, M. Miloche, M. Soni, R.K., see Asahi, H. 60/61 (1992) 625
Maaza and R. Krishnan, Microstruc- Souzu, Y., see Kobayashi, K. 60/61 (1992) 443
tural and magnetic characterization Stoyanov, S., New development in the
of the interfaces in DC triode sput- theory of MBE growth of Si: a con-
60/61 (1992) 55
tered metal /carbon and metallic: mul- frontation with experiment
tilayer films 60/61 (1992) 781 Suemitsu, M., see Hirose, F. 60/61 (1992) 592
Setsune, K., see Ichikawa, Y. 60/61 (1992) 749 Sueyoshi, T., see Iwatsuki, M. 60/61 (1992) 580
60/61 (1992) 513
Shen, J., C. Zhu, Z. Ma, S. Pang and Sugahara, H., see Maeyama, S.
Z.Q. Xue, Observation of small metal
832 Author index
60/61 (1992) 820
Sugano, T., Atomically controlled surface Taninaka, M., see Suzuki, Y.
60/61 (1992) 79
and interface, and semiconductor de- Tanishiro, Y., see Yamaguchi, H.
vice performance 60/61 (1992) 698 Tanishiro, Y., see Minoda, H. 60/61 (1992) 107
Sugaya, T., Y. Okada and M. Kawabe, Tanishiro, Y., see Sato, H. 60/61 (1992) 367
Investigation of growth mechanism of Tapfer, L., G.C. La Rocca, H. Lage, O.
GaAs in molecular beam epitaxy with Brandt, D. Heitmann and K. Ploog,
atomic hydrogen irradiation 60/61 (1992) 251 X-ray diffraction study of corrugated
Sugii, K., see Shinoda, Y. 60/61 (1992) 112 semiconductor surfaces, quantum
Sugii, K., see Hirota, Y. 60/61 (1992) 619 wires and quantum boxes 60/61 (1992) 517
60/61 (1992) 215
Sugiyama, M., see Maeyama, S. 60/61 (1992) 513 Taylor, A.G., see Zhang, J.
Sumita, I., see Niwa, M. 60/61 (1992) 39 Toda, F., T. Yamada and H. Abe, Oxida-
Sumita, I., see Tanaka, H. 60/61 (1992) 474 tion of Si(100) surfaces with ultrathin
Sumitomo, K., see Kinoshita, T. 60/61 (1992) 183 metal overlayers in ozone atmosphere 60/61 (1992) 729
Sumitomo, K., see Tanaka, Y. 60/61 (1992) 195 Togashi, F., see Mitsuhashi, M. 60/61 (1992) 565
Suntola, T., see Lakomaa, E.-L. 60/61 (1992) 742 Tohno, S., see Palmer, J.E. 60/61 (1992) 266
Suzuki, A., J. Lee, K. Kudo, Y. Makita, Tokumoto, H., see Morita, Y. 60/61 (1992) 466
A. Yamada and K. Tanaka, Evalua- Tokutaka, H., see Yamano, K. 60/61 (1992) 754
60/61 (1992) 120
tion of nucleation and defects in Tomioka, S., see Ohshima, N.
MBE-grown strained InAs /GaAs Tomozawa, H., see Fujikura, H. 60/61 (1992) 702
quantum structures on variously ori- Tomozawa, H., K. Numata and H.
ented substrates 60/61 (1992) 631 Hasegawa, Interface states at lattice-
Suzuki, J., see Yara, T. 60/61 (1992) 308 matched and pseudomorphic _het-
Suzuki, M., Y. Homma, Y. Kudoh and R. erostructures 60/61 (1992) 721
Kaneko, Step bunching structure on Toyoda, K., see Fan, J.-F. 60/61 (1992) 765
vicinal Si(111) surfaces studied by Tsuda, M., see Oikawa, S. 60/61 (1992) 29
scanning force microscopy 60/61 (1992) 460 Tsukada, M., see Watanabe, S. 60/61 (1992) 437
Suzuki, M., see Homma, Y. 60/61 (1992) 479 Tsukada, M., see Kobayashi, K. 60/61 (1992) 443
Suzuki, S., see Ogura, I. 60/61 (1992) 672 Tsukada, M., see Schimizu, T. 60/61 (1992) 454
Suzuki, T., see Soga, T. 60/61 (1992) 380 Tsukida, T., see Sasajima, Y. 60/61 (1992) 653
Suzuki, Y., H. Kikuchi, M. Taninaka, T. Tsutsui, K., see Ono, A. 60/61 (1992) 608
Katayama and S. Yoshida, Phase-
locked epitaxy and structural analysis
of Fe /Au(100) artificial superlattices 60/61 (1992) 820
Uchida, T. and K. Wada, Kinetics of
Tada, T., see Hiraoka, Y.S. 60/61 (1992) 246 MBE growth on flat and stepped sur-
Takano, A., see Ueda, K. 60/61 (1992) 178 faces 60/61 (1992) 234
Takano, A. and K. Ueda, On kinetic Uchijima, T., see Imai, F. 60/61 (1992) 770
energy distribution of oxygen ion des- Uda, T., see Ihara, S. 60/61 (1992) 22
orbed from CO-adsorbed Ni(110) by Udaka, T., see Yase, K. 60/61 (1992) 330
time-of-flight type electron-stimu- Ueda, K., S. Kodama and A. Takano,
lated desorption 60/61 (1992) 693 Study of hydrogen adsorption on sili-
Takeda, Y., see Kuwahara, Y. 60/61 (1992) 529 con surfaces by time-of-flight type
Takeyasu, N., see Asahi, H. 60/61 (1992) 625 electron-stimulated desorption spec-
Tamura, M., see Saitoh, T. 60/61 (1992) 228 troscopy (TOF-ESD) 60/61 (1992) 178
Tanaka, H., Y. Watanabe and I. Sumita, Ueda, K., see Takano, A. 60/61 (1992) 693
Scanning tunneling microscopy of the Uehara, Y., see Ushioda, S. 60/61 (1992) 448
(331) facets on the vicinal Si(111) sur- Ueno, Y., see Kudo, K. 60/61 (1992) 334
60/61 (1992) 474
face Uesugi, F. and I. Nishiyama, Syn -
Tanaka, H., see Kamiya, I. 60/61 (1992) 534 chrotron-radiation-induced growth
Tanaka, K., see Kudo, K. 60/61 (1992) 334 suppression and initiation in molecu-
Tanaka, K., see Suzuki, A. 60/61 (1992) 631 lar-beam chemical vapor deposition
Tanaka, Y., see Kinoshita, T. 60/61 (1992) 183 of aluminum 60/61 (1992) 587
Tanaka, Y., T. Kinoshita, K. Sumitomo, Umeno, M., see Soga, T. 60/61 (1992) 380
F. Shoji, K. Oura and I. Katayama, Urano, T., see Santo, K. 60/61 (1992) 172
Ag thin film growth on hydrogen- Ushioda, S., Y. Uehara and M. Kuwa-
terminated Si(100) surface studied by hara, STM light emission spec-
TOF-ICISS 60/61 (1992) 195 troscopy of Au film 60/61 (1992) 448
Author index 833
Van Leeuwen, R.A., see Engel, B.N. 60/61 (1992) 776 Yamamoto, R., see Mae, K. 60/61 (1992) 667
Vook, R.W. and C.Y. Chang, The catas- Yamanaka, M., see Yase, K. 60/61 (1992) 326
trophic phase of electromigration: Yamano, K., K. Nishimori, H. Tokutaka,
surface diffusion, island formation, S. Kishida and N. Ishihara, Observa-
and film thinning 60/61 (1992) 71 tion of the initial growth of semicon-
Vook, R.W. and B. Oral, Weakly bound ductor films on the Bi-based super-
carbon monoxide at catalytically ac- conducting single crystal by RHEED
tive sites on Cu(111)/Pd(i11) thin method. Low temperature reaction of
films 60/61 (1992) 681 Ge with BSCCO single crystal 60/61 (1992) 754
Vvedensky, D.D., see Joyce, B.A. 60/61 (1992) 200 Yamauchi, S., M. Hirai, M. Kusaka, M.
Iwami, H. Nakamura, Y. Yokota, A.
Wada, K., see Uchida, T. 60/61 (1992) 234 Akiyama and H. Watabe, TEM and
Wang, C., see Coleman, R.V. 60/61 (1992) 485 SXES study of Ni-silicide/Si inter-
Wasa, K., see Ichikawa, Y. 60/61 (1992) 749 face: crystallographic relationship
Watabe, H., see Yamauchi, S. 60/61 (1992) 372 with the Si substrates 60/61 (1992) 372
60/61 (1992) 544
Watanabe, S., M. Aono and M. Tsukada, Yamauchi, Y., see Kobayashi, N.
Theoretical calculations of the scan- Yara, T., M. Yuasa, J.S. Ma, J. Suzuki, S.
ning tunneling microscopy images of Okada and A. Hiraki, Fabrication of
the Si(111V)3 x ¥3-Ag surface: ef- diamond films by a magneto-active
fects of the tip shape 60/61 (1992) 437 plasma CVD using alcohol—hydrogen
Watanabe, T., see Soni, R.K. 60/61 (1992) 553 system 60/61 (1992) 308
Watanabe, Y., see Niwa, M. 60/61 (1992) 39 Yase, K., M. Yamanaka and K. Sato,
Watanabe, Y., see Tanaka, H. 60/61 (1992) 474 Growth mechanism of thin solid film
Wiedmann, M.H., see Engel, B.N. 60/61 (1992) 776 of long chain compounds on the sur-
Williams, R.S., Design of atomically face of KCI substrate in molecular
abrupt solid interfaces 60/61 (1992) 613 level 60/61 (1992) 326
Wu, L., see Engel, B.N. 60/61 (1992) 776 Yase, K. and T. Udaka, Two-dimensional
Wu, N.-J., see Yasunaga, H. 60/61 (1992) 64 crystal growth of protein molecules at
the lipid /water interface 60/61 (1992) 330
Xue, Z.Q., H.J. Gao, W.M. Liu, C. Zhu, Yasuda, M., see Fukuda, H. 60/61 (1992) 359
Z. Ma and S. Pang, Investigation of Yasuda, Y., see Ohshima, N. 60/61 (1992) 120
periodic structures of polyethylene Yasunaga, H., N.-J. Wu, S. Yoda, T. Aida
crystal lamellas with STM 60/61 (1992) 346 and K. Sakamoto, Atomic layer con-
Xue, Z.Q., see Shen, J. 60/61 (1992) 648 trol by electromigration on semicon-
ductor surfaces 60/61 (1992) 64
Yagi, K., see Yamaguchi, H. 60/61 (1992) 79 Yoda, S., see Yasunaga, H. 60/61 (1992) 64
Yagi, K., see Minoda, H. 60/61 (1992) 107 Yokota, Y., see Yamauchi, S. 60/61 (1992) 372
Yagi, K., see Sato, H. 60/61 (1992) 367 Yokota, Y., T. Kobayashi, M. Hirai, M.
Yakovlev, N.L., see Sokolov, N.S. 60/61 (1992) 421 Kusaka, M. Iwami and N. Akiyama,
Yamada, A., see Suzuki, A. 60/61 (1992) 631 Cross-sectional TEM observation of
Yamada, T., see Yoshida, K. 60/61 (1992) 391 the epitaxial Al/Si(111) interface 60/61 (1992) 385
Yamada, T., see Toda, F. 60/61 (1992) 729 Yoshida, K. and T. Yamada, Atomic mix-
Yamaga, S., see Matsumoto, S. 60/61 (1992) 274 ing of Bi and Mn by vacuum deposi-
Yamaguchi, H., Y. Tanishiro and K. Yagi, tions and structure investigation of its
REM study of surface electromigra- products by high-resolution electron
60/61 (1992) 391
tion of Ge, Au-Cu and Ag on Si(111) microscopy
60/61 (1992) 240
surfaces 60/61 (1992) 79 Yoshida, S., see Sasaki, M.
60/61 (1992) 820
Yamaguchi, H. and Y. Horikoshi, As Yoshida, S., see Suzuki, Y.
60/61 (1992) 274
desorption from GaAs and InAs sur- Yoshikawa, A., see Matsumoto, S.
60/61 (1992) 146
faces studied by improved high-en- Yoshimura, M., see Murakami, K.
ergy electron reflectivity measure- Yoshimura, M., H. Shigekawa, K. Kawa-
ments 60/61 (1992) 224 bata, Y. Saito and A. Kawazu, STM
Yamaguchi, H., see Kuwahara, Y. 60/61 (1992) 529 study of organic thin films of BEDT-
Yamamoto, H., see Shinjo, T. 60/61 (1992) 798 TTF iodide 60/61 (1992) 317
Yamamoto, N., see Minoda, H. 60/61 (1992) 107 Yoshimura, R., see Hiraoka, Y.S. 60/61 (1992) 246
Yamamoto, R., see Arisawa, S. 60/61 (1992) 321 Yoshinaga, A., see Joyce, B.A. 60/61 (1992) 200
Yamamoto, R., see Sasajima, Y. 60/61 (1992) 653 Yuasa, M., see Yara, T. 60/61 (1992) 308
834 Author index
Zaima, S., see Ohshima, N. 60/61 (1992) 120 Zhang, J., J.H. Neave, B.A. Joyce, A.G.
Zegenhagen, J., J.R. Patel and E. Fontes, Taylor, S.R. Armstrong and M.E.
Adsorption on a double layer of Ge Pemble, A RHEED and RA study of
on Si(111) studied with X-ray stand- MEE growth 60/61 (1992) 215
ing waves 60/61 (1992) 505 Zhu, A.R., see Dong, S.Z. 60/61 (1992) 342
Zembutsu, S., see Palmer, J.E. 60/61 (1992) 266 Zhu, C., see Xue, Z.Q. 60/61 (1992) 346
Zhang, J., see Joyce, B.A. 60/61 (1992) 200 Zhu, C., see Shen, J. 60/61 (1992) 648