Applied Physics. A, Materials Science & Processing 1998: Vol A66 Table of Contents

5 Pages·1998·2.4 MB·English

Contents of Applied Physics A 66
Abdul-Gader MM — Wishah KA Bucksbaum PH — Larsson J El-Shazly AA — Hegab NA
Abgarjan T — Krause-Rehberg R Bumay YA — Ulyashin AG Erdélyi G ~ Beszeda I
Abu-Sehly AA — Hafiz MM Burkel E — Worle D Evsyukov SE — Pesin LA
Afifi MA — Hegab NA Bussjager RJ — Osman JM
Afonso CN — Gonzalo J Bykov IP — Bryknar Z
Fadel M, Azim M. OA, Omer OA
Afonso CN — Serna R Bykov V, Gologanov A, Shevyakov V:
Basily RR: A study of some optical
Aguiar R — Sanchez F Test structure for SPM tip shape
properties of hafnium dioxide (HfO2)
Aifantis EC — Zaiser M deconvolution 499
thin films and their applications 335
Albino Aguiar J ~ Yadava YP
Fahrner WR — Ulyashin AG
Almeida Murphy T — Weidinger A ‘ai W, Zhang L: Ambience-induced alter-
Falcone RW — Larsson J
Amann M — Sieskind M nating change of optical absorption for
the porous silica host loaded with silver Falk F > Diegel M
Andreoni W, Curioni A: Ab initio ap-
Fecher GH — Schmied B
proach to the structure and dynamics nanometer particles 419
of metallofullerenes 299 ‘alderazzo F — Arimondo E Feldermann H — Hofsiss H
Angstenberger B — Konov VI ‘ampbell EEB — Herrmann RFW Ferreira JM — Yadava YP
Anwane SW — Singh K ‘ampbell EEB — Kusch Ch Fink J — Pichler T
Fotakis C — Zergioti |
Arimondo E, Calderazzo F, Fuso F, ‘ao L — Zhao W
Masciarelli G, Toffi C: Laser vaporiza- ‘haiken J — Osman JM Fritzsche H — Moschovis K
tion of carbon in the presence of carbon Chatzitheodoridis E — Moschovis K Fromherz P — Vassanelli S
Frost F, Schindler A, Bigl F: lon beam
dioxide 407 ‘hen LB — Pan YL
‘hen Y — Ma W smoothing of indium-containing II!-\
Ayuela A — Seifert G
Azim M. OA — Fadel M ‘hen ZQ, Hu XW, Wang SJ: Vacancies compound semiconductors 663
Fu PZ — Zhang XR
and impurities in InP studied using
positron lifetime and an improved Fujiwara S — Kokai F
Bahners T — Praschak D Doppler-broadening spectrometer 435 Fujiwara S — Yamamoto K
Bai HL, Jiang EY, Wang CD, Tian RY: Fuso F — Arimondo E
Chow WW — Girndt A
Structural stability of heat-treated
Christova K — Skordeva E
CoN/CN soft X-ray multilayers fabri-
Comtet G — Dujardin G Gagaoudakis E — Moschovis K
cated by dual-facing-target sputtering
Curioni A — Andreoni W Gan CM — Zhang XR
423
Curtis T — Kalem S Garrido F — Thomé L
Baitinger EM — Pesin LA
Gerlach J — Herrmann RFW
Ballesteros JM — Serna R Dausinger F — Konov VI Gill DS — Grivas C
Bart! A — Knorr S Delgado JC > Sanchez I Girndt A, Koch SW, Chow WW
Bartl A — Seifert G Demming F + Jersch J Microscopic theory of laser gain in
Barwolff A — Puchert R Demuth V — Worle D semiconductor quantum wells |
Basily RR — Fadel M Dennis S — John T Glinchuk MD — Bryknar Z
Bastl Z — Drinek V Dickmann K — Jersch J
Golden MS — Pichler T
Bednarek S: Susceptibility of magnetodi- Diegel M, Falk F, Hergt R, Hobert H, Gologanov A — Bykov \
electrics within an elastomer matrix Stafast H: Crystalline SiC thin film Gomez San Roman R > Gonzalo J
to length changes in heterogeneous deposition by laser ablation: influence Gontier-Moya E — Beszeda I
magnetic field 643 of laser surface activation 183 Gonzalo J, G6mez San Roman R, Perrieére J,
Beke DL — Beszeda I Dimitrova Z — Skordeva E Afonso CN, Pérez Casero R: Pressure
Bekheet AE — Hegab NA Dinse K-P — Knapp C effects during pulsed-laser deposition of
Beszeda I, Ealet B, Gontier-Moya E, Dolgaev SI, Voronov VV, Shafeev GA: barium titanate thin films 487
Beke DL, Erdélyi G: Kinetics of Heteroepitaxial growth of oxides on Gosele U + Kistner G
evaporation of Cu beaded films on sapphire induced by laser radiation in the Gosele U > Scholz R
sapphire 93 solid—liquid interface 87 Gregora | — Dfinek V
Bhoga SS — Singh K Doole RC — Serna R Grigoropoulos CP — Zergioti I
Big] F — Frost F Dreyer M — Wadas A Grivas C, Gill DS, Mailis S, Boutsikaris L,
de Boer WB — Kalem S Drinek V, Urbanova M, Bastl Z, Gre- Vainos NA: Indium oxide thin-film holo-
Bolshakov AP — Konov VI gora I, Vorlicek V, Subrt J, Pola J: graphic recorders grown by excimer laser
Boneberg J, Tresp M, Ochmann M, Carbonaceous phases by IR laser-induced reactive sputtering 201
Miinzer H-J, Leiderer P: Time-resolved decomposition of 3-butyn-2-one 503 Grobert N > Terrones M
measurements of the response of a STM Du YW — Xu JF Grossmann A > Jiang H-B
tip upon illumination with a nanosecond Dujardin G, Philippe L, Rose M, Hi- Griinleitner H — Worle D
laser pulse 615 rayama T, Ramage MJ, Comtet G, Grupp A — Knorr S
Bor Z > Mechler A Hellner L: lon photodesorption from Gu JH — Lu CJ
Boéske T — Pichler T argon multilayers 527 Gu SL — Liu JL
Boutsikaris L — Grivas C Dunsch L > Knorr S Gu TS — Shek CH
Bryknar Z, Bykov IP, Glinchuk MD, Dunsch L > Pichler T
Laguta VV, Maximenko YL, Potucek Z, Dunsch L > Seifert G
Jastrabik L, Schulz H-J: ESR and optical Hafiz MM, Moharram AH, Abu-Sehly AA:
spectroscopy of copper-doped PLZT Ealet B + Beszeda I Characterization of (As.Te);—,Se, thin
electro-optic ceramics 555 Ellegaard O — Svendsen W films 217
IV
Hamoudi A, Ogura M, Wang XL, Okada T, Jiang RL > Liu JL Kusch Ch, Krawez N, Tellgmann R, Win-
Matsuhata H: High quality GaAs quan- Jin H + Zhao W ter B, Campbell EEB: Thermal desorption
tum wires grown by flow rate modulation Job R — Ulyashin AG spectroscopy of fullerene films containing
epitaxy 137 John T, Dennis S, Shinohara H: Produc- endohedral Li@Cgy 293
Hiinsch ThW — Jiang H-B tion, isolation, and characterization of
Hansen TN — Svendsen W group-2 metal-containing endohedral Laguta VV — Bryknar Z
Hare JP — Terrones M metallofullerenes 243 Lai JKL — Shek CH
He T > Qin Z Jullien P — Mathey P Lanéok J — Sonsky J
Hegab NA, Bekheet AE, Afifi MA, El-Shaz- Jung Ch — Pichler T Landinez Tellez DA — Yadava YP
ly AA: Effect of annealing on the optical Lapezyna M, Stuke M: Direct fab-
properties of In2Te3 thin films 235 Kalem S, Curtis T, de Boer WB, rication of micro mesas by VUV
Heid R — Lebedkin S Stillman GE: Low-temperature photo- laser ablation of polymers: PMMA
Heimann PA — Larsson J luminescence in SiGe single quantum (polymethylmethacrylate) 473
Heimann RB — Kokai F wells 23 Larsson J, Heimann PA, Lindenberg AM,
Heimann RB — Yamamoto K Kalpouzos C — Zergioti I Schuck PJ, Bucksbaum PH, Lee RW,
Hellner L — Dujardin G Kantor Z — Mechler A Padmore HA, Wark JS, Falcone RW:
Helm H — Winnewisser C Karpuzov D — Kaschieva S Ultrafast structural changes measured by
Hergt R — Diegel M Kaschieva S, Stefanov KG, Karpuzov D: time-resolved X-ray diffraction 587
Herrmann RFW, Gerlach J, Campbell EEB: Electron irradiation of ion-implanted O’Leary SK, Lim PK: Influence of the
Ultrashort pulse laser ablation of silicon: n-type Si—SiO> structures studied by kinetic energy of localization on the
an MD simulation study 35 deep-level transient spectroscopy 561 distribution of electronic states in
Heszler P — Mechler A Kastner G, Gésele U, Tan TY: A model of amorphous semiconductors 53
Hildenhagen LJ — Jersch J strain relaxation in hetero-epitaxial films Lebedkin S, Renker B, Heid R, Schober H,
Hinsberg WD — Houle FA on compliant substrates 13 Rietschel H: A spectroscopic study
Hirayama T — Dujardin G Keilmann F — Knoll B of M@Cx> metallofullerenes: Raman,
Hiroyama Y — Tamura M Kirbach U — Knorr S far-infrared, and neutron scattering
Ho KM — Temelkuran B Kirbach U — Pichler T results 273
Hobert H — Diegel M Kiriakidis G — Moschovis K Lee RW — Larsson J
Hofsiss H, Feldermann H, Merk R, Se- Kleiber M — Wadas A Leiderer P + Boneberg J
bastian M, Ronning C: Cylindrical spike Knapp C, Weiden N, Dinse K-P: EPR Leipner HS — Krause-Rehberg R
model for the formation of diamondlike investigation of endofullerenes in solution Leontiev IA — Konov VI
thin films by ion deposition 153 249 Lewen F — Winnewisser C
Horiuchi M — Tamura M Knoll B, Keilmann F: Scanning microscopy Li FM — Pan YL
Hou DL, Nie XF, Luo HL: Studies by mid-infrared near-field scattering LiL > Xu ZL
on the magnetic viscosity and 477 Li Y > XuC
the magnetic anisotropy of y-Fe203 Knorr S, Grupp A, Mehring M, Kirbach U, Lim PK — O'Leary SK
powders 109 Bartl A, Dunsch L: Pulsed ESR inves- Lin C — Zhang M
Houle FA, Hinsberg WD: Stochastic simu- tigations of anisotropic interactions in Lin GM — Shek CH
lation of heat flow with application to M@Cxg2 (M=Sc, Y,La) 257 Lin JY — Xu JF
laser—solid interactions 143 Knupfer M — Pichler T Lindenberg AM — Larsson J
Hsu WK — Terrones M Koch SW — Girndt A Liu HD > Xu ZL
Hu XW — Chen ZQ Koga Y — Kokai F Liu JL, Lu Y, Shi Y, Gu SL, Jiang RL,
Huang DH — Pan YL Koga Y — Yamamoto K Wang F, Zheng YD: Fabrication of silicon
Huang SM — Lu YF Kokai F, Yamamoto K, Koga Y, Fujiwara S, nanowires 539
Hiigel H — Konov VI Heimann RB: Characterization of ab- Liu Z-J — Zhang DW
Hunt NEJ — Schubert EF lation plumes and carbon nitride films Lompré P — Mathey P
produced by reactive pulsed laser deposi- Long Y > XuC
Istratov AA, Weber ER: Electrical proper- tion in the presence of a magnetic Lu CJ, Shen HM, Wang YN, Gu JH: Sur-
ties and recombination activity of copper, field 403 face morphology and surface chemical
nickel and cobalt in silicon 123 Kokai F + Yamamoto K states of epitaxial Pb(Zrg.95Tig,95)O3 thin
Konov VI, Prokhorov AM, Uglov SA, films grown on SrTi03(100) by sputter
Jaeger A — Puchert R Bolshakov AP, Leontiev IA, Dausinger F, deposition 445
Jagielski J ~ Thomé L Hiigel H, Angstenberger B, Sepold G, Lu Y > Liu JL
Jastrabik L — Bryknar Z Metev S: CO> laser-induced plasma CVD Lu YF, Huang SM. Wang XB, Shen ZX:
Jelinek M — Sonsky J synthoef sdiiamson d 575 Laser-assisted growth of diamond par-
Jersch J, Demming F, Hildenhagen LJ, Krause-Rehberg R, Leipner HS, Ab- ticulates on a silicon surface from
Dickmann K: Field enhancement of opti- garjan T, Polity A: Review of defect a cyclohexane liquid 543
cal radiation in the nearfield of scanning investigations by means of positron Lu YN — Zhang XR
probe microscope tips 29 annihilation in If — VI compound Lu Z — Ma W
Ji W — Xu JF semiconductors 599 Luft J — Puchert R
Jiang EY — Bai HL Krawez N — Kusch Ch Luo HL — Hou DL
Jiang H-B, Grossmann A, Hiinsch ThW: Kroto HW — Terrones M
Self-assembled monolayer of propylben- Kudryavtsev YP — Pesin LA Ma W, Lu Z, Zhang M: Investigation of struc-
zoat on the bimetallic surface of Rb/Cr Kumpf C — Worle D tural transformations in nanophase titanium
119 Kuran P — Pichler T dioxide by Raman spectroscopy 621
Ma W, Zhang M, Yu T, Chen Y, Ming N: Papakonstantinou P > Zergioti | Scholz R » Zhang M
Stress effect and evidence of ferroelec- Pérez Casero R + Gonzalo J Schénhense G + Schmied B
tric weakening in highly c-axis-oriented Perriére J — Gonzalo J Schou Jj — Svendsen W
PbTiO3 thin films 345 Pesin LA, Baitinger EM, Kudryavtsev YP. Schubert EF, Hunt NEJ: !5000 hrs stable
Mailis S — Grivas C Evsyukov SE: Effect of the surface com- operation of resonant cavity light emitting
Mailis S ~ Moschovis K position of chlorine-containing polymers diodes 319
Mailis S — Zergioti I upon their XPS parameters 469 Schuck PJ — Larsson J
Masciarelli G — Arimondo E Petford-Long AK — Serna R Schulz H-J — Bryknar Z
Mathey P, Jullien P, Lompré P, Rytz D: *hilippe L — Dujardin G Schulz M — Worle D
Photorefractive detection of antiparallel Pichler T, Knupfer M, Golden MS, Boske T, Schwoerer M — Terrones M
ferroelectric domains in BaTiO; and Fink J, Kirbach U, Kuran P, Dunsch L, Sebastian M — Hofsiiss H
BaTiO3:Co crystals 511 Jung Ch: The metallofullerene Tm @Cg): Seifert G, Bart! A, Dunsch L, Ayuela A,
Matsuhata H — Hamoudi A isomer-selective electronic structure Rockenbauer A: Electron spin reson-
Maximenko YL — Bryknar Z 281 ance spectra: geometrical and electronic
Mechler A, Heszler P. Kantor Z, Szérényi T. Pietzak B — Weidinger A structure of endohedral fullerenes 265
Bor Z: Diamond-like carbon layer for- Pivin JC — Thomé L Sepold G — Konov VI
mation on graphite by excimer laser Pola J — Diinek V Serna R, Missana T, Afonso CN, Balles-
irradiation 659 Polity A — Krause-Rehberg R teros JM, Petford-Long AK, Doole RC
Mehring M — Knorr S Ponpon JP — Sieskind M Bi nanocrystals embedded in an amorph
de Melo MT — Yadava YP Potucek Z — Bryknar Z ous Ge matrix grown by pulsed laser
Merk R — Hofsiiss H Praschak D, Bahners T, Schollmeyer E: deposition 43
Metev S — Konov VI PET surface modifications by treatment Shafeev GA — Dolgaev SI
Ming N — Ma W with monochromatic excimer UV Shek CH, Gu TS, Lin GM, Lai JKL:
Missana T — Serna R lamps 69 Positron lifetime study of vacancy-
Miyakawa T — Yoshino J Prassides K — Terrones M type defects in amorphous and
Moharram AH: Optical constants Prokhorov AM — Konov VI polycrystalline nanometer-sized
of thermally evaporated Asj9Te;oSgo Puchert R, Tomm JW, Jaeger A, Barwolff A, alumina 413
thin films 77 Luft J, Spath W: Emitter failure and Shen HM — Lu CJ
Moharram AH: Structural and optical thermal facet load in high-power laser Shen SY — Pan YL
properties of GezpSb,Sego_, films diode arrays 483 Shen YH — Pan YL
Moharram AH — Hafiz MM Shen ZX — Lu YF
Morenza JL — Sanchez F Qian S > XuC Shevyakov V—- Bykov \
Morimoto J — YoshinoJ Qin Z, He T, Zhang Y: Characteristics of Shi Y — Liu JL
Moschovis K, Gagaoudakis E, the conductive polyimide film surfaces Shinohara H — John T
Chatzitheodoridis E, Kiriakidis G, induced by ultraviolet laser beam 441 Sieskind M, Amann M, Ponpon JP: Infrared
Mailis S, Tzamali E, Vainos NA, properties of etched mercuric iodide
Ramage MJ — Dujardin G
Fritzsche H: Study of the ambient optical surfaces 655
Renker B — Lebedkin S
recording dynamics on sputtered indium Sigalas M — Temelkuran B
Rietschel H — Lebedkin S
oxide thin films 651 Singh K, Pande SM, Anwane SW,
Rizza G — Thomé L
Miinzer H-J — Boneberg | Bhoga SS: A study of iso- and alio-valent
Rockenbauer A — Seifert G
cation doped Ag>SOxz solid electrolyte
Nash F — Osman JM Ronning C — Hofsiss H 205
Nie XF — Hou DL Rose M — Dujardin G Skordeva E, Christova K, Tzolov M,
Niemann E — Scholz R Ruan K — Zhao W Dimitrova Z: Photoinduced changes
Nishida A — Tamura M Rusu M: On thickness dependence of elec- of mechanical stress in amorphous
trical and optical properties of Te thin
Ge—As—S(Se) film/Si substrate
Ochmann M — Boneberg | films 357
systems 103
Ogura M — Hamoudi A Rytz D — Mathey P
Sonsky J, Lanéok J, Jelinek M, Oswald J,
Okada T — Hamoudi A
Okamoto Y — Yoshino J Sanchez F, Morenza JL, Aguiar R, Del- Studni¢ka V: Growth of active Nd-
Omer OA — Fadel M gado JC, Varela M: Dynamics of the doped YAP thin-film waveguides by
Osman JM, Bussjager RJ, Nash F, hydrodynamical growth of columns on laser ablation 583
Chaiken J, Villarica RM: Photoredox silicon exposed to ArF excimer-laser Soukoulis CM — Temelkuran B
laser chemistry of transition metal irradiation 83 Spaith W — Puchert R
oxides 223 Schindler A — Frost F Stafast H — Diegel M
Oswald J — Sonsky J Schilder A — Terrones M Staikova V — Sueva D
Ozbay E — Temelkuran B Schmied B, Fecher GH, Schneider CM, Stefanov KG — Kaschieva S
Schénhense G: Preparation of thin films Stietz F, Vartanyan TA, Viereck J, Wenzel T,
Padmore HA — Larsson J of the ternary heavy fermion system Trager F: Adsorbate-induced transition
Pan YL, Wu YJ, Chen LB, Zhao YY, CeNi2Ger 385 between different mechanisms of laser-
Shen YH, Li FM, Shen SY, Huang DH: Schneider CM — Schmied B stimulated desorption 367
Structure and spectroscopic charac- Schober H — Lebedkin S Stillman GE — Kalem S
terization of polycrystalline vanadyl Schollmeyer E — Praschak D Strunk HP — Worle D
phthalocyanine (VOPc) films fabricated Scholz R, Gésele U, Wischmeyer F, Studni¢ka V — Sonsky J
by vacuum deposition 569 Niemann E: Prevention of micropipes and Stuke M — Lapczyna M
Pande SM — Singh K voids at B-SiC/Si(100) interfaces 59 Subrt J + Diinek V
Vi
Sueva D, Staikova V, Vapirev EI: Investiga- Vassanelli S, Fromherz P: Transistor Al,Ga,In;_,—)P-2As,;—-/GaAs with
tion of the n*-p-2-p* structure of silicon records of excitable neurons from rat direct band gap up to 2.0eV 565
avalanche diodes by charged particles brain 459
549 Viereck J — Stietz F Yadava YP, Landinez Tellez DA, de
Svendsen W, Schou J, Hansen TN, Elle- Villarica RM — Osman JM Melo MT, Ferreira JM, Albino Aguiar J:
gaard O: Angular distributions of emitted Vorlicek V — Dyinek V Structural ordering and chemical sta-
particles by laser ablation of silver at Voronov VV — Dolgaev SI bility of a complex perovskite oxide
355nm 493 Wadas A, Dreyer M, Kleiber M, Wiesen- DyBa2ZrOs.5 with YBazCu307-5
Szorényi T > Mechler A danger R: Thickness-dependent superconductors 455
magnetic domain structures of ultrathin Yamamoto K, Koga Y, Fujiwara S, Kokai F,
Tamura M, Hiroyama Y, Nishida A, Hori- Co/Au(1i11) films studied by means of Heimann RB: Dependence of the sp*
uchi M: Secondary defects in low-energy magnetic force microscopy in ultrahigh bond fraction on the laser wavelength in
As-implantedS i 373 vacuum 465 thin carbon films prepared by pulsed laser
Tan TY — Kastner G Waiblinger M — Weidinger A deposition 115
Tang SH — Xu JF Walton DRM — Terrones M Yamamoto K — Kokai F
Tellgmann R — Kusch Ch Wan Y-Z — Zhang DW Yang CQ —> Xu ZL
Temelkuran B, Ozbay E, Sigalas M, Wang CD — Bai HL Yang L — Zhao W
Tuttle G, Soukoulis CM, Ho KM: Re- Wang F — Liu JL Yin H — Zhang XR
flection properties of metallic photonic Wang J-T — Zhang DW Yoshino J, Okamoto Y, Morimoto J,
crystals 363 Wang SJ — Chen ZQ Miyakawa T: Distribution of deep levels
Terrones H — Terrones M Wang XB — Lu YF in Si:Au by spectral analysis of deep-level
Terrones M, Hsu WK, Schilder A, Ter-
Wang XL — Hamoudi A transient spectroscopy 323
rones H, Grobert N, Hare JP, Zhu YQ,
Wang YN > Lu CJ Yu T — Ma W
Schwoerer M, Prassides K, Kroto HW,
Wark JS — Larsson J
Walton DRM: Novel nanotubes and Weber ER — Istratov AA Zaiser M, Aifantis EC: On the dynamic
encapsulated nanowires 307
Weiden N — Knapp C interaction between moving dislocations
Thomé L, Jagielski J, Rizza G, Gar-
Weidinger A, Waiblinger M, Pietzak B, 393
rido F, Pivin JC: Formation of metallic Almeida Murphy T: Atomic nitrogen in Zergioti I, Mailis S, Vainos NA, Pa-
nanophases in silica by ion-beam mixing
Coo:N@Coo 287 pakonstantinou P, Kalpouzos C,
Part I: Mixing mechanisms 327 Weng H — Zhang M Grigoropoulos CP, Fotakis C: Microde-
Tian M — Zhao W Wenzel T — Stietz F position of metal and oxide structures
Tian RY — Bai HL Wiesendanger R — Wadas A using ultrashort laser pulses 579
ToffiC — Arimondo E Winnewisser C, Lewen F, Helm H: Trans- Zhang DW, Liu Z-J, Wan Y-Z, Wang J-T:
Tomm JW -—> Puchert R mission characteristics of dichroic Phase diagram for diamond growth in
Trager F — Stietz F
filters measured by THz time-domain atmospheric oxyacetylene flames 49
Tresp M — Boneberg J spectroscopy 593 Zhang L — Cai W
Tsitsishvili EG: Optical anisotropy in
Winter B — Kusch Ch Zhang M, Scholz R, Weng H, Lin C:
nonspherical quantum dots 189
Wischmeyer F — Scholz R Defects and voids in He*-implanted Si
Tuttle G + Temelkuran B Wishah KA, Abdul-Gader MM: Photo- studied by slow-positron annihilation and
Tzamali E — Moschovis K conduction and polarization effects in transmission electron microscopy 521
Tzolov M — Skordeva E a heat-treated Au/Pb2CrOs/SnO> film Zhang M — Ma W
Uglov SA > Konov VI device 229 Zhang QL — Zhang XR
Ulyanenkov A: Grazing-incidence X-ray Worle D, Griinleitner H, Demuth V, Zhang R > Xu C
diffraction from multilayers, taking into Kumpf C, Strunk HP, Burkel E, Zhang XR, Zhang QL, Lu YN, Gan CM,
account diffuse scattering from rough Schulz M: Amorphous and crystalline Fu PZ, Yin H, Zhou JL: Anisotropy of
interfaces 193 IrSi Schottky barriers on silicon 629 sound velocity for a new PbB4O7 crystal
Ulyashin AG, Bumay YA, Job R, Fahr- Wu YJ — Pan YL as determined by the laser ultrasonic
ner WR: Formation of deep p—n junctions technique 35]
in p-type Czochralski grown silicon by Xu C, Long Y, Zhang R, Zhao L, Zhang Y > Qin Z
hydrogen plasma treatment 399 Qian S, Li Y: Laser ablation time-of-flight Zhao L > Xu C
Urbanova M — Drinek V mass spectrometric probing of the surface Zhao W, Jin H, Tian M, Ruan K,
states of SiO2-based porous materials 99 Yang L, Cao L: Nanocrystalline-
Vainos NA — Grivas C Xu JF, Ji W, Lin JY, Tang SH, Du YW: grained Bi—Sr—Ca—Cu—O and its
Vainos NA — Moschovis K Preparation of ZnS nanoparticles by superconducting property 45]
Vainos NA — Zergioti I ultrasonic radiation method 639 Zhao YY — Pan YL
Vapirev EI — Sueva D Xu WJ — Xu ZL Zheng YD — Liu JL
Varela M — Sanchez F Xu ZL, Xu WJ, Li L, Yang CQ, Liu HD: Zhou JL — Zhang XR
Vartanyan TA — Stietz F Liquid phase epitaxy growth of Zhu YQ — Terrones M