Universita` degli Studi di Modena e Reggio Emilia Facolta` di Scienze Matematiche Fisiche e Naturali Ph.D. School in Physics and Nanoscience Role of the vacuum fluctuation forces in microscopic systems Author Supervisor Andrea Benassi Prof. Carlo Calandra Buonaura Colloquia Doctoralia XXI ciclo. Modena, November 2008 2 To my parents 4 Introduction In the last few years an increasing attention has been addressed to the nature and inten- sity of the forces arising from the electromagnetic vacuum fluctuations (Casimir and van der Waals or dispersion forces) [1, 2]. The interest in this subject comes from some basic developments: (i) the increased experimental effort, that has led to accurate measurements of the force intensity for specific configurations [3, 4, 5, 6, 7, 8, 9, 10], (ii) the understanding of the relationship between the force and the elementary excitations of the interacting bod- ies, that has allowed to generalization to real materials of results originally obtained using idealized boundary conditions [11, 12, 13, 14, 15, 16, 17, 18], (iii) the role played by these forcesinnano-andmicrodevices[19,20,21,22,23],(iv)thepossibilityofexploitingdifferent geometrical configurations to achieve the desired properties of the forces [24, 25]. Thepurposeofthepresentthesisistostudytherolethatelectromagneticvacuumfluctu- ation forces may play in a number of issues that are relevant at the nano- microscopic scale. The study is devoted to the following problems: i) Stability of deposited metal films: investigation of the importance of vacuum fluctuation force in determining the critical thickness of metal overlayer with respect to the transition between a uniform two-dimensional phase and a corrugated one [26, 27, 28]. The attention is focused first on the force acting on the film boundaries in the case of a free standing film and then on the modifications of this force when the film is deposited on a metal substrate. It is shownthat, while the force does notcontribute to the surfacestability in the case of an isolated film, being too weak in comparison with the surface stress, it can be crucially important in the case of deposition, where vacuum electromagnetic energy may be of the same orderof magnitude ofthe difference between the elastic energycausedby the lattice mismatch, which favours the surface corrugation to release the excess elastic energy, andthesurfaceenergy,whichtendstofavourtheplanarconfiguration. Thestudyprovidethe conditions under which the force on the film can sustain the stability of the planar configu- ration,givenintermsoftheparametersenteringintotheexpressionofthedielectricfunction. ii)Size effectsintheCasimirinteractionbetweenultrathinfilms: studyoftheef- fectsofthequantizationoftheenergylevelscausedbyquantumconfinementontheintensity of the force between metal films. The use of bulk dielectric functions in the force calculation within the framework of the Lifshitz theory, while appropriate for thick enough films [29], is expectedtogiveunrealisticresultswhenthefilm thicknessisofthe orderoffewnanometers. The study has been carried out by determining the dielectric function of a confined system of free electrons using the RPA approximationto calculate the dielectric function [30]. This turns out to have a tensorialcharacter,consistent with the strong anisotropy of the electron distribution, and to depend upon the film thickness through the electron energies and the dipole matrix elements. In view of the importance of the confinement potential different models have been considered: the particle in a box model [31] and models where the later- ally averaged one electron potential is represented by a finite well. The modifications with respect to calculations with the bulk dielectric function have been analyzed as a function of the potential depth and of the electron density. 6 iii) First principles calculation of the force between ultrathin silicon films: a study aiming at understanding how modifications in the dielectric function induced by the reduced film size and by the occurrence of surface states may cause changes in the vacuum fluctuationforcebetweensiliconslabs. Densityfunctionaltheoryhasbeenusedtodetermine the film dielectric tensor starting from the one electron energies and wavefunctions calcu- lated self-consistently for the film, using both simple RPA [30] and the RPA corrected by localfieldeffectstodeterminethemacroscopicdielectrictensoratvanishingwavevectorfrom the inverse dielectric matrix [32, 33]. The force calculated using the film dielectric tensor is compared with the calculation starting from the bulk dielectric function obtained with the sametheory. Evidenceisprovidedthatthepresenceofsurfacestatescanaffecttheforceover a large range of film separation distances. The macroscopic dielectric tensor turns out to be very sensitive to local field effects. As a consequence the force can be significantly modified by their inclusion. iv) Influence of metal insulator transition in device actuated by the electro- magnetic vacuum force: the proposal of a device that exploits the phase transition to extendthe distance and energyrangesoverwhichit canbe operated. The basic device com- ponentsarefilmsofGeTe[34,35,36](orothercompoundswithsimilarbehaviour[37,38,39]) , a material that undergoes a rapid transitions between polycristalline phases, which show a metallicbehaviourwithap-type conductivitydueto vacantGe sites,andamorphousphases withtypicalsemiconductorproperties[40]. Startingfromempiricallyderiveddielectricfunc- tion one can obtain device potential profile and bifurcation diagrams illustrating how the device proprties can be tuned optically. The plan of the thesis is the following. The first two chapters are devoted to the pre- sentation of the basic theory. In particular the first one summarize basic concepts of elec- trodynamics of linear media and presents a discussion of model dielectric functions to be used in the applications. The second chapter is a presentation of the Lifshitz theory of the electromagnetic vacuum fluctuation forces and shortly review recent developments. Each of the following chapters is devoted to one of the above outlined issues and presents a detailed discussion of the subject under consideration, a complete illustration of the results and the appropriate conclusions. Bibliography [1] M. Bordag, U. Mohideen, and V.M. Mostepanenko. Phys. Rep., 353:1, 2001. [2] S.K. Lamoreaux. Rep. Prog. Phys., 68:201, 2005. [3] S.K. Lamoreaux. Phys.Rev.Lett., 78:5, 1997. [4] U. Mohideen and A. Roy. Phys. Rev. Lett., 81:4549,1998. [5] B.W. Harris, F. Chen, and U. Mohideen. Phys. Rev. A, 62:052109,2000. [6] T. Ederth. Phys. Rev. A, 62:062104,2000. [7] H.B.Chan,V.A.Aksyuk,R.N.Kleiman,D.J.Bishop,andF.Capasso.Science,291:1941, 2001. [8] G. Bressi, G. Carugno, R. Onofrio, and G. Ruoso. Phys. Rev. Lett., 88:041804,2002. [9] R.S. Decca, E. Fischbach, G.L. Klimchitskaya, D.E. Krause, D. Lopez, and V.M. Mostepanenko. Phys. Rev. D, 68:116003,2003. [10] R.S. Decca, D. Lopez, E. Fischbach, G.L. Klimchitskaya, D.E. Krause, and V.M. Mostepanenko. Ann.Phys., 318:37,2005. [11] E.M. Lifshitz. Sov. Phys. JEPT, 2:73, 1956. [12] I.E. Dzyaloshinskii, E.M. Lifshitz, and L.P. Pitaevskii. Adv. Phys., 10:165,1958. [13] H. Krupp. Advan. Colloid Interface, 1:111, 1967. [14] L. Bergstr¨om. Adv. Colloid Interface Sci., 70:125,1987. [15] B.E. Sernelius. Surface Modes in Physics. Wiley-VCH, Berlin, 2001. [16] A. Lambrecht and S. Reynaud. Eur. Phys. D, 8:309, 2000. [17] F. Intravaia and A. Lambrecht. Phys. Rev. Lett., 94:110404,2005. [18] K. Joulain, J.P. Mulet, F. Marquier, R. Carminati, and J.J. Greffet. Surf. Sci. Rep., 57:59, 2005. [19] F.M. Serry, D. Walliser, and G.J. Maclay. J. Appl. Phys., 84:2501,1998. [20] E. Buks and M.L. Roukes. Phys. Rev. B, 63:033402,2001. [21] H.B. Chan, V.A. Aksyuk, R.N. Kleiman, D.J. Bishop, and F. Capasso. Phys.Rev.Lett., 87:211801,2001. [22] D. Iannuzzi, M. Lisanti, J.N. Munday, and F. Capasso. Solid State Comm., 135:618, 2005. [23] J. Barcenas, L. Reyes, and R. Esquivel-Sirvent. Appl. Phys. Lett., 87:263106,2005. 8 BIBLIOGRAPHY [24] H.B. Chan, Y. Bao, J. Zou, R. A. Cirelli, F. Klemens, W.M. Mansfield, and C.S. Pai. Phys. Rev. Lett., 101:030401,2008. [25] A. Lambrecht and V.N. Marachevsky. Phys. Rev. Lett., 101:160403,2008. [26] R. Asaro and W. Tiller. Met.Trans., 3:1789,1971. [27] M. Grinfield. Sov.Phys.Dokl., 31:831,1986. [28] Z.Y. Zhang, Q. Niu, and C.K. Shih. Phys.Rev.Lett., 85:5158,1998. [29] P.A. Maia Neto, A. Lambrecht, and S. Reynaud. Phys. Rev. A, 78:012115,2008. [30] H. Ehrenreich and M.H. Cohen. Phys.Rev., 115:786,1959. [31] D.M. Wood and N.W. Ashcroft. Phys.Rev.B, 25:6255,1982. [32] S.L. Adler. Phys.Rev., 126:413,1962. [33] N. Wiser. Phys.Rev., 129:62,1963. [34] K.L. Chopra and S.K. Bahl. J.Appl.Phys., 40:4171,1969. [35] S.K. Bahl and K.L. Chopra. J.Appl.Phys., 40:4940,1969. [36] S.K. Bahl and K.L. Chopra. J.Appl.Phys., 41:2196,1970. [37] M. Wuttig. Nature Mat., 4:267, 2005. [38] M.Wuttig,D.Lusebrink,D.Wamwangi,W.Welnic,M.Gilleben,andR.Dreonskowski. Nature Mat., 6:122, 2007. [39] W. Welnic, A. Pamungkas,R. Detemple, C. Steimer, S. Blugel, and M. Wuttig. Nature Mat., 5:56, 2005. [40] W. Welnic, S. Botti, L. Reining, and M. Wuttig. Phys.Rev.Lett., 98:236403,2007. Acknowledgments I would like to express my special thanks to professor Carlo Calandra Buonaura for his in- valuable guidance, help and support over these years. Another special thanks to professor Elisa Molinari who hosted me in S3 national research center giving me the opportunity to attend schools, workshop and seminars all over the world. I want to acknowledge CINECA consorzio interuniversitario for funding my Ph.D. fellow- ship. I am grateful to Carlo Cavazzonifrom the High Performance Computing Department, for the huge amount of computational time and for the precious technical help he provided me with. I am grateful to Dr. Andrea Ferretti, Dr. Daniele Varsano and Dr. Stefano Corni for their interest in my activity and for their important contributions. Many thanks to Dr. Layla Martin-Samos, Dr. Agostino Migliore, Dr. Gianmarco Bra- manti, Dr. Massimo Rontani for the helpful material they address me to and for the useful discussions about the theoretical concepts reviewed in the first part of this thesis. 10 BIBLIOGRAPHY
Description: