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Advances in thin-film solar cells PDF

305 Pages·2018·10.083 MB·English
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Advances in Thin-Film Solar Cells Second Edition Advances in Thin-Film Solar Cells Second Edition I. M. Dharmadasa August14,2018 16:46 PSPBook-9inx6in 00-SolarCell-Prelims Publishedby PanStanfordPublishingPte.Ltd. PenthouseLevel,SuntecTower3 8TemasekBoulevard Singapore038988 Email:[email protected] Web:www.panstanford.com BritishLibraryCataloguing-in-PublicationData AcataloguerecordforthisbookisavailablefromtheBritishLibrary. AdvancesinThin-FilmSolarCells(SecondEdition) Copyright(cid:2)c 2018PanStanfordPublishingPte.Ltd. Allrightsreserved.Thisbook,orpartsthereof,maynotbereproducedinany form or by any means, electronic or mechanical, including photocopying, recordingoranyinformationstorageandretrievalsystemnowknownorto beinvented,withoutwrittenpermissionfromthepublisher. For photocopying of material in this volume, please pay a copying fee through the Copyright Clearance Center, Inc., 222 Rosewood Drive, Danvers, MA 01923, USA. In this case permission to photocopy is not requiredfromthepublisher. ISBN978-981-4800-12-9(Hardcover) ISBN978-0-429-00124-6(eBook) August10,2018 14:9 PSPBook-9inx6in 00-SolarCell-Prelims Contents PrefacetotheSecondEdition xiii ListofSymbolsandAbbreviations xvii 1 PhotovoltaicSolarEnergyConversion 1 1.1 Introduction 1 1.2 PhotovoltaicEffect 3 1.3 SolarEnergyMaterials 3 1.4 ElectronicDevicesUsedforSolarEnergyConversion 5 1.4.1 p–nJunctions 5 1.4.2 p–i–nJunctions 7 1.4.3 Hetero-junctions 8 1.4.4 n–nandp–pJunctions 9 1.4.5 Metal/Semiconductor(orSchottky)Contacts 10 1.4.6 Metal/Insulator/SemiconductorInterfaces 12 1.5 CharacteristicsofaSolarCell 14 1.5.1 I–V CharacteristicsofaSolarCellUnderDark Conditions 14 1.5.2 I–V CharacteristicsofaSolarCellUnder IlluminatedConditions 18 1.5.3 HowtoMaximiseV 20 oc 1.5.4 HowtoMaximise J 21 sc 1.5.5 HowtoMaximiseFF 22 1.6 Summary 22 Exercises 24 2 StatusReportonSolarEnergyTechnologies 27 2.1 Introduction 27 2.2 SiSolarCellTechnology 28 2.3 PVManufacturingCostBasedonSiTechnology 32 August10,2018 16:6 PSPBook-9inx6in 00-SolarCell-Prelims vi Contents 2.4 PVTechnologyBasedonIII–VCompounds 34 2.5 DisruptiveTechnologyforPVDevelopment 35 2.6 EmergingLow-CostThin-FilmTechnologies 36 2.7 Next-GenerationSolarCells 37 2.8 Summary 39 Exercise 41 3 ElectrochemicalDepositionofSolarEnergyMaterials 43 3.1 Introduction 43 3.2 ElectrodepositionofSemiconductors 44 3.3 StrengthsandAdvantagesofElectrodeposition 45 3.3.1 Simplicity,Low-Cost,Scalability,and Manufacturability 45 3.3.2 Self-PurificationandBuilt-InHydrogen Passivation 47 3.3.3 ExtrinsicandIntrinsicDoping 48 3.3.4 AbilityinBandgapEngineering 49 3.3.5 OtherAdvantagesofElectrodeposition 49 3.4 ExperimentalEvidence 50 3.4.1 ObservationsinXRD 50 3.4.2 ObservationsinXRF 50 3.4.3 ObservationsinPECCellMeasurements 52 3.4.4 ObservationsinOpticalAbsorption Measurements 56 3.4.5 ObservationsinPhotoluminescence 57 3.4.6 ImpurityControlinSemiconductors 59 3.5 IssuesinElectrodepositionofSemiconductors 60 3.6 SummaryofElectroplatedMaterialstoDate 63 3.7 ApplicationsinPVDevices 63 3.8 Summary 66 Exercises 69 4 BackgroundoftheCdTeSolarCellandtheNewDevice Concept 71 4.1 Introduction 71 4.2 ThePreviousModelforaGlass/Conducting Glass/CdS/CdTe/MetalSolarCell 73 August10,2018 14:9 PSPBook-9inx6in 00-SolarCell-Prelims Contents vii 4.3 KeyObservationsThatLedtotheFormulationofa NewModel 76 4.3.1 SurfaceModificationofCdTe 76 4.3.2 EffectsofSurfaceModificationonDefectLevels 76 4.3.3 EffectsofDefectLevelsonElectronicDevices 77 4.3.4 SimilarObservationsonThin-FilmCdS/CdTe SolarCells 79 4.4 NewConceptforCdS/CdTeSolarCell 80 4.5 DescriptionofExperimentalResultsUsingthe TwoModels 85 4.5.1 Current–Voltage(I–V)Characteristics 85 4.5.2 Capacitance–Voltage(C–V)Characteristics 86 4.5.3 ElectronBeam–InducedCurrent Measurements 87 4.5.4 ObservationofDiscreteBarrierHeightsand V Values 87 oc 4.5.5 AThin-FilmCdTeSolarCellDeviceWithouta CdSLayer 88 4.5.6 ResultsfromElectricalContactingWork 89 4.5.7 DopingofCdSandCdTeLayers 90 4.5.8 FurtherExperimentalEvidencetoConfirmthe TrueStructureoftheDevice 91 4.6 PredictionsfortheFurtherDevelopmentofCdS/CdTe SolarCellsandLatestObservations 94 4.6.1 DopingofWindowandAbsorberMaterials withn-Dopants 94 4.6.2 ImprovementstoBackContactUsing MIS-TypeStructures 99 4.6.3 AMulti-layerGradedBandgapApproach 102 4.6.4 DealingwithDefects 103 4.6.5 ProgressduringthePeriod2011–2016 105 4.7 Summary 107 Exercises 111 5 ExtensionoftheNewModeltoCIGSThin-FilmSolarCells 115 5.1 Introduction 115 5.2 SummaryofAccumulatedKnowledgeon CIGS-BasedMaterials 116 August10,2018 14:9 PSPBook-9inx6in 00-SolarCell-Prelims viii Contents 5.2.1 DifferentGrowthTechniques 116 5.2.2 Structural,Optical,andElectricalProperties 116 5.2.3 OrderedDefectCompoundLayer 117 5.2.4 LatestDevelopmentsinMaterialsGrowth 117 5.3 SummaryofAccumulatedKnowledgeon CIGS-BasedSolarCells 118 5.3.1 ConventionalDeviceStructure 118 5.3.2 FrequentlyUsedEnergyBandDiagram 119 5.4 CurrentViewsofthePhysicsBehindCIGSSolarCells 121 5.4.1 p-CIGS/n-CdSHetero-junction 121 5.4.2 p-CIGS/n-CIGSHomo-junction 121 5.4.3 p-CIGS/n-ODCHetero-junction 122 5.5 ReportedDevicePerformance 122 5.6 RecentWorkonMetal/p-CIGSInterfaces 124 5.7 DeeperUnderstandingofMo/CIGS/CdS/i-ZnO/ n-ZnO:Al/Metal-GridSolarCells 126 5.7.1 TypeICIGS-BasedSolarCell 126 5.7.2 TypeIICIGS-BasedSolarCell 130 5.8 DiscussiononFurtherImprovementsofCIGS SolarCells 132 5.8.1 OptimisationofGrowth,Doping,and BandgapEngineering 133 5.8.2 DefectLevelIdentificationandEngineering 133 5.8.3 GrowthofCIGSwithControlledOrientation 134 5.8.4 ReplacementofMoUsingTCOforTandem andDouble-FacedSolarCells 134 5.8.5 FurtherImprovementsoftheDevice Structure 135 5.9 Conclusions 136 5.10 Summary 138 6 EffectiveHarvestingofPhotons 143 6.1 Introduction 143 6.2 TandemSolarCells 144 6.2.1 ConnectioninSeries 145 6.2.2 ConnectioninParallel 146 6.3 ComparisonoftheTwoConnectingMethods 148 6.3.1 DisadvantagesofSeriesConnections 148 6.3.2 AdvantagesofParallelConnections 149 August10,2018 16:6 PSPBook-9inx6in 00-SolarCell-Prelims Contents ix 6.4 Conclusions 151 6.5 Summary 152 Exercise 154 7 Multi-layerGradedBandgapSolarCells 155 7.1 Introduction 155 7.1.1 IncorporationoftheImpurityPVEffect 156 7.1.2 IncorporationofImpactIonisation 157 7.2 SummaryofGrowthandProcessDetailsofthe DeviceStructure 157 7.3 ExperimentalResultsofFullyProcessedDevices 158 7.3.1 ElectricalPropertiesUnderDarkConditions 159 7.3.2 ElectricalPropertiesUnderAM1.5 Illumination 161 7.3.3 IPCEMeasurements 163 7.3.4 EBICMeasurements 164 7.3.5 SIMSProfiling 166 7.3.6 OptimisationofSiDopingConcentration 167 7.4 Discussions 171 7.5 Summary 173 Exercise 175 8 SolarCellsActiveinCompleteDarkness 177 8.1 Introduction 177 8.2 SummaryofExperimentalResults 177 8.3 SearchforExperimentalEvidenceoftheImpurity PVEffect 179 8.4 ResponsivityMeasurements 180 8.5 I–V MeasurementsUnderDarkConditions 181 8.5.1 I–V asaFunctionofLightIntensity 181 8.5.2 I–V MeasurementsUnderCompleteDarkness 182 8.6 Discussion 184 8.7 Conclusions 186 8.8 Summary 186 Exercise 188 9 EffectsofDefectsonPhotovoltaicSolarCellCharacteristics 189 9.1 Introduction 189 9.2 VariationsofI–V CharacteristicsofMetal/n-CdTe Interfaces 190

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