2D materials for nanoelectronics

472 Pages·2016·23.468 MB·English

by  Dimoulas, Athanasios, Houssa, Michel, Molle, Alessandro

2D Materials for
Nanoelectronics
Series in Materials Science and Engineering
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Series in Materials Science and Engineering
2D Materials for
Nanoelectronics
Edited by
Michel Houssa
IMEC, Leuven, Belgium
Athanasios Dimoulas
NCSR-Demokritos, Athens, Greece
Alessandro Molle
CNR IMM, Agrate Brianza, Italy
Boca Raton London New York
CRC Press is an imprint of the
Taylor & Francis Group, an informa business
Cover Image: Illustration of silicene transistor device. Courtesy of Jo Wozniak, UT-Austin.
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Version Date: 20151123
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Contents
Preface ........................................................................................ix
Editors .........................................................................................xi
Contributors ...............................................................................xiii
SECtion i Graphene
ChaPtEr 1 theory of the Structural, Electronic and
transport Properties of Graphene .............................3
Massoud Ramezani Masir, Ortwin Leenaerts,
Bart Partoens and François M. Peeters
ChaPtEr 2 Epitaxial Graphene: Progress on Synthesis
and Device integration ...........................................37
Joshua Robinson, Matthew Hollander and Suman Datta
ChaPtEr 3 Metal Contacts to Graphene ...................................53
Akira Toriumi and Kosuke Nagashio
ChaPtEr 4 Graphene for rF analogue applications ..................79
Max C. Lemme and Frank Schwierz
ChaPtEr 5 high-Field and thermal transport in Graphene ......107
Zuanyi Li, Vincent E. Dorgan, Andrey Y. Serov
and Eric Pop
v
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Contents
SECtion ii transition Metal Dichalcogenides
ChaPtEr 6 theoretical Study of transition Metal
Dichalcogenides ..................................................141
Emilio Scalise
ChaPtEr 7 Physico-Chemical Characterisation of MoS /
2
Metal and MoS /oxide interfaces .........................163
2
Stephen McDonnell, Rafik Addou, Christopher L. Hinkle
and Robert M. Wallace
ChaPtEr 8 transition Metal Dichalcogenide Schottky
Barrier transistors: a Device analysis and
Material Comparison ...........................................207
Joerg Appenzeller, Feng Zhang, Saptarshi Das and
Joachim Knoch
ChaPtEr 9 tMD-Based Photodetectors, Light Emitters and
Photovoltaics ......................................................241
Thomas Mueller
ChaPtEr 10 optoelectronics, Mechanical Properties and
Strain Engineering in MoS ..................................273
2
Andres Castellanos-Gomez, Michele Buscema,
Herre S.J. van der Zant and Gary A. Steele
ChaPtEr 11 Device Physics and Device Mechanics for
Flexible tMD and Phosphorene thin-Film
transistors ..........................................................301
Hsiao-Yu Chang, Weinan Zhu and Deji Akinwande
SECtion iii novel 2D Materials
ChaPtEr 12 Structural, Electronic and transport Properties
of Silicene and Germanene ..................................331
Michel Houssa, Valery Afanas’ev and André Stesmans
vi
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Contents
ChaPtEr 13 Group iV Semiconductor 2D Materials: the Case
of Silicene and Germanene ..................................349
Alessandro Molle, Dimitra Tsoutsou and
Athanasios Dimoulas
ChaPtEr 14 Stannene: a Likely 2D topological insulator .........379
William Vandenberghe, Ana Suarez Negreira and
Massimo Fischetti
ChaPtEr 15 Phosphorene: a novel 2D Material for Future
nanoelectronics and optoelectronics ...................409
Yexin Deng, Zhe Luo, Han Liu, Yuchen Du,
Xianfan Xu and Peide D. Ye
ChaPtEr 16 2D Crystal-Based heterostructures for
nanoelectronics ..................................................433
Cinzia Casiraghi and Freddie Withers
index........................................................................................455
vii
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Preface
The success of the semiconductor industry relies on the con-
tinuous improvement of the performance of integrated circuits, accompanied
by the reduction of their production costs. This has been achieved so far by
reducing the size of the basic building block of integrated circuits: the metal–
oxide– semiconductor field effect transistor (MOSFET). During the past 10–15
years, new materials were introduced to enable the reduction of MOSFET
dimensions, like high-k gate dielectrics, metal gates, low-k dielectrics and
copper interconnects. More recently, new devices architectures, based on
multiple gates (FinFETs), replaced the conventional planar transistors. To
continue device scaling, alternative materials to silicon, like germanium and
III–V compounds, with high carrier mobilities, could be used as the channel
in future devices.
However, further reduction in MOSFET dimensions will soon lead to a
tremendous rise in power consumption as well as limited gain in the perfor-
mances of integrated circuits. In this respect, two-dimensional (2D) materi-
als such as graphene, transition metal dichalcogenides, and novel materials
such as silicene, germanene, stannene and phosphorene, offer the possibility
to downscale the channel thickness at the atomic level, which could lead to
much improved electrostatic control of the device and suppression of the so-
called short channel effects.
The isolation of graphene by Andre Geim and Konstantin Novoselov in
2004 opened the door to research on 2D materials. This monolayer of carbon
atoms, arranged in a hexagonal network, has triggered considerable interest
in the scientific community, due to its unique structural, mechanical and elec-
tronic properties. Graphene could be used in future nanoelectronic devices,
taking advantage of its extremely high carrier mobilities and ambipolar
behaviour. The absence of an energy gap in graphene, however, is problematic
for logic applications, which require a sufficiently large ratio between the off
and on-state current of the transistors. Such applications would thus require
the use of other 2D materials, with complementary properties. Among these
materials, semiconducting transition metal dichalcogenides are gaining a lot
of interest, due to the possibility to tune their energy band gap through their
thickness, composition and applied mechanical strain. Other 2D materials
based on group-IV elements, such as silicene, germanene and stannene, were
theoretically predicted, and silicene and germanene were recently successfully
ix
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