16-Bit Schottky Barrier Diode RC Bus-Termination Array datasheet

291 Pages·2014·14.21 MB·English

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SDFS093 − NOVEMBER 1992 − REVISED DECEMBER 1993
•
Designed to Reduce Reflection Noise DW PACKAGE
• (TOP VIEW)
Repetitive Peak Forward
Current...300mA
• GND 1 20 GND
16-Bit Array Structure Suited for
A1 2 19 A16
Bus-Oriented Systems
A2 3 18 A15
description A3 4 17 A14
A4 5 16 A13
This bus-termination array is designed to reduce A5 6 15 A12
reflection noise and minimize ringing on A6 7 14 A11
high-performance bus lines. The SN74F1016 A7 8 13 A10
features a 16-bit R-C network and Schottky barrier A8 9 12 A9
diode array. These Schottky diodes provide GND 10 11 GND
clamp-to-ground functionality and serve to
minimize overshoot and undershoot of
high-speed switching buses.
The SN74F1016 is characterized for operation
from 0°C to 70°C.
schematic diagram
GND A16 A15 A14 A13 A12 A11 A10 A9 GND
20 19 18 17 16 15 14 13 12 11
1 2 3 4 5 6 7 8 9 10
GND A1 A2 A3 A4 A5 A6 A7 A8 GND
Resistor = 50Ω ± 10%
Capacitor = 47 pF ± 10%, VR = 2.5 V, f = 1 MHz
Diode = Schottky
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"&#"(cid:26)(cid:27)0 (cid:29)(cid:28) !)) ’!(cid:30)!(cid:31)&"&(cid:30)#+
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 2−1
•
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
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SDFS093 − NOVEMBER 1992 − REVISED DECEMBER 1993
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Steady-state reverse voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
R
Continuous forward current, I : Any D terminal from GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
F
Total through all GND terminals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170 mA
Repetitive peak forward current, I ‡: Any D terminal from GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA
FRM
Total through all GND terminals . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 A
Continuous total power dissipation at (or below) 25°C free-air temperature . . . . . . . . . . . . . . . . . . . . 500 mW
Operating free-air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
†Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
‡These values apply for tw ≤ 100 µs, duty cycle ≤ 20%.
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
single-diode operation (see Note 1)
PARAMETER TEST CONDITIONS MIN TYP† MAX UNIT
IR Static reverse current VR = 7 V 2 µA
VFM Peak forward voltage IF = 200 mA 1.25 V
VR = 0 80
CCtt TToottaall ccaappaacciittaannccee VR = 2 V 60 ppFF
VR = 3 V 55
†All typical values are at TA = 25°C.
NOTE 1: Test conditions and limits apply separately to each of the diodes. The diodes not under test are open-circuited during the measurement
of these characteristics.
multiple-diode operation
PARAMETER TEST CONDITIONS MIN TYP† MAX UNIT
Ix Internal crosstalk current Total GND current = 1.2 A, See Note 2 10 50 µA
NOTE 2: Ix is measured under the following conditions with one diode static, all others switching:
Switching diodes: tw = 100 µs, duty cycle = 20%;
Static diode: VR = 5 V; the static diode input current is the internal crosstalk current Ix.
switching characteristics, T = 25°C
A
PARAMETER TEST CONDITIONS MIN TYP† MAX UNIT
trr Reverse recovery time IF = 10 mA, IRM(REC) = 10 mA, IR(REC) = 1 mA, RL = 100 Ω 8 10 ns
undershoot characteristics
PARAMETER TEST CONDITIONS MIN TYP† MAX UNIT
tf = 2 ns, tw = 50 ns, VIH = 5 V, VIL = 0, ZS = 25 Ω, ZO = 50 Ω,
VUS Undershoot voltage 0.7 0.8 V
L = 36-inch coaxial cable
2−2 POST OFFICE BOX 65•5303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
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SDFS093 − NOVEMBER 1992 − REVISED DECEMBER 1993
APPLICATION INFORMATION
Large negative transients occurring at the inputs of memory devices (DRAMs, SRAMs, EPROMs, etc.) or on the
CLOCK lines of many clocked devices can result in improper operation of the devices. The SN74F1016 diode
termination array helps suppress negative transients caused by transmission line reflections, crosstalk, and switching
noise.
Diode terminations have several advantages when compared to resistor termination schemes. Split resistor or
Thevenin equivalent termination can cause a substantial increase in power consumption. The use of a single resistor
to ground to terminate a line usually results in degradation of the output high level, resulting in reduced noise immunity.
Series damping resistors placed on the outputs of the driver will reduce negative transients, but they can also increase
propagation delays down the line, as a series resistor reduces the output drive capability of the driving device. Diode
terminations have none of these drawbacks.
The operation of the diode arrays in reducing negative transients is explained in Figure 1. The diode conducts current
whenever the voltage reaches a negative value large enough for the diode to turn on. Suppression of negative
transients is tracked by the current-voltage characteristic curve for that diode. A typical current voltage for the
SN74F1016 is shown in Figure 1.
The maximum effectiveness of the diode arrays in suppressing negative transients occurs when they are placed at
the end of a line and/or the end of a long stub branching off a main transmission line. The diodes can also be used
to reduce the negative transients that occur due to discontinuities in the middle of a line. An example of this is a slot
in a backplane that is provided for an add-on card.
DIODE FORWARD CURRENT
vs
DIODE FORWARD VOLTAGE
−100
Variable 1:
TA = 25°C VIN −Ch1
−90 Linear Sweep:
Start 0.000 V
−80 Stop −2.000 V
A
m Step −0.010 V
− −70
nt Constants:
re −60 VHI −Vs1 3.5000 V
r
Cu VLO −Vs2 0.0000 V
d −50
r
a
w
r −40
o
F
−
II −30
−20
−10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VF − Forward Voltage − V
Figure 1
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SDFS093 − NOVEMBER 1992 − REVISED DECEMBER 1993
ZO = 50 Ω
Length = 36 in
S1
ZS = 25Ω
(a) UNDERSHOOT TEST SETUP
218.500 ns 243.500 ns 268.500 ns
S1 Open
S1 Closed
Vmarker 1
Vmarker 2
−2.0 V
Ch. 1 = 1.00 V/div Offset = −20.00 mV
Timebase = 5.00 ns/div Delay = 243.5 ns
Vmarker 1 = 0.00 V Delta V = −640.00 mV
Vmarker 2 = −640.00 mV
(b) SCOPE DISPLAY
Figure 2. Undershoot Test Setup and Scope Display
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POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
PACKAGE OPTION ADDENDUM
www.ti.com 10-May-2007
PACKAGING INFORMATION
OrderableDevice Status(1) Package Package Pins Package EcoPlan(2) Lead/BallFinish MSLPeakTemp(3)
Type Drawing Qty
SN74F1016DW ACTIVE SOIC DW 20 25 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
SN74F1016DWE4 ACTIVE SOIC DW 20 25 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
SN74F1016DWE4 ACTIVE SOIC DW 20 25 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
SN74F1016DWG4 ACTIVE SOIC DW 20 25 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
SN74F1016DWG4 ACTIVE SOIC DW 20 25 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
SN74F1016DWR ACTIVE SOIC DW 20 2000 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
SN74F1016DWR ACTIVE SOIC DW 20 2000 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
SN74F1016DWRE4 ACTIVE SOIC DW 20 2000 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
SN74F1016DWRE4 ACTIVE SOIC DW 20 2000 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
SN74F1016DWRG4 ACTIVE SOIC DW 20 2000 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
SN74F1016DWRG4 ACTIVE SOIC DW 20 2000 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
(1)Themarketingstatusvaluesaredefinedasfollows:
ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartin
anewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)EcoPlan-Theplannedeco-friendlyclassification:Pb-Free(RoHS),Pb-Free(RoHSExempt),orGreen(RoHS&noSb/Br)-pleasecheck
http://www.ti.com/productcontentforthelatestavailabilityinformationandadditionalproductcontentdetails.
TBD:ThePb-Free/Greenconversionplanhasnotbeendefined.
Pb-Free(RoHS):TI'sterms"Lead-Free"or"Pb-Free"meansemiconductorproductsthatarecompatiblewiththecurrentRoHSrequirements
forall6substances,includingtherequirementthatleadnotexceed0.1%byweightinhomogeneousmaterials.Wheredesignedtobesoldered
athightemperatures,TIPb-Freeproductsaresuitableforuseinspecifiedlead-freeprocesses.
Pb-Free(RoHSExempt):ThiscomponenthasaRoHSexemptionforeither1)lead-basedflip-chipsolderbumpsusedbetweenthedieand
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible)asdefinedabove.
Green(RoHS&noSb/Br):TIdefines"Green"tomeanPb-Free(RoHScompatible),andfreeofBromine(Br)andAntimony(Sb)basedflame
retardants(BrorSbdonotexceed0.1%byweightinhomogeneousmaterial)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incomingmaterialsandchemicals.TIandTIsuppliersconsidercertaininformationtobeproprietary,andthusCASnumbersandotherlimited
informationmaynotbeavailableforrelease.
InnoeventshallTI'sliabilityarisingoutofsuchinformationexceedthetotalpurchasepriceoftheTIpart(s)atissueinthisdocumentsoldbyTI
Addendum-Page1
PACKAGE OPTION ADDENDUM
www.ti.com 10-May-2007
toCustomeronanannualbasis.
Addendum-Page2
PACKAGE MATERIALS INFORMATION
www.ti.com 11-Mar-2008
TAPE AND REEL INFORMATION
*Alldimensionsarenominal
Device Package Package Pins SPQ Reel Reel A0(mm) B0(mm) K0(mm) P1 W Pin1
Type Drawing Diameter Width (mm) (mm) Quadrant
(mm) W1(mm)
SN74F1016DWR SOIC DW 20 2000 330.0 24.4 10.8 13.1 2.65 12.0 24.0 Q1
PackMaterials-Page1
PACKAGE MATERIALS INFORMATION
www.ti.com 11-Mar-2008
*Alldimensionsarenominal
Device PackageType PackageDrawing Pins SPQ Length(mm) Width(mm) Height(mm)
SN74F1016DWR SOIC DW 20 2000 346.0 346.0 41.0
PackMaterials-Page2

PACKAGE OPTION ADDENDUM
www.ti.com 10-May-2007
PACKAGING INFORMATION
OrderableDevice Status(1) Package Package Pins Package EcoPlan(2) Lead/BallFinish MSLPeakTemp(3)
Type Drawing Qty
SN74F1016DW ACTIVE SOIC DW 20 25 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
SN74F1016DWE4 ACTIVE SOIC DW 20 25 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
SN74F1016DWE4 ACTIVE SOIC DW 20 25 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
SN74F1016DWG4 ACTIVE SOIC DW 20 25 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
SN74F1016DWG4 ACTIVE SOIC DW 20 25 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
SN74F1016DWR ACTIVE SOIC DW 20 2000 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
SN74F1016DWR ACTIVE SOIC DW 20 2000 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
SN74F1016DWRE4 ACTIVE SOIC DW 20 2000 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
SN74F1016DWRE4 ACTIVE SOIC DW 20 2000 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
SN74F1016DWRG4 ACTIVE SOIC DW 20 2000 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
SN74F1016DWRG4 ACTIVE SOIC DW 20 2000 Green(RoHS& CUNIPDAU Level-1-260C-UNLIM
noSb/Br)
(1)Themarketingstatusvaluesaredefinedasfollows:
ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartin
anewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)EcoPlan-Theplannedeco-friendlyclassification:Pb-Free(RoHS),Pb-Free(RoHSExempt),orGreen(RoHS&noSb/Br)-pleasecheck
http://www.ti.com/productcontentforthelatestavailabilityinformationandadditionalproductcontentdetails.
TBD:ThePb-Free/Greenconversionplanhasnotbeendefined.
Pb-Free(RoHS):TI'sterms"Lead-Free"or"Pb-Free"meansemiconductorproductsthatarecompatiblewiththecurrentRoHSrequirements
forall6substances,includingtherequirementthatleadnotexceed0.1%byweightinhomogeneousmaterials.Wheredesignedtobesoldered
athightemperatures,TIPb-Freeproductsaresuitableforuseinspecifiedlead-freeprocesses.
Pb-Free(RoHSExempt):ThiscomponenthasaRoHSexemptionforeither1)lead-basedflip-chipsolderbumpsusedbetweenthedieand
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible)asdefinedabove.
Green(RoHS&noSb/Br):TIdefines"Green"tomeanPb-Free(RoHScompatible),andfreeofBromine(Br)andAntimony(Sb)basedflame
retardants(BrorSbdonotexceed0.1%byweightinhomogeneousmaterial)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incomingmaterialsandchemicals.TIandTIsuppliersconsidercertaininformationtobeproprietary,andthusCASnumbersandotherlimited
informationmaynotbeavailableforrelease.
InnoeventshallTI'sliabilityarisingoutofsuchinformationexceedthetotalpurchasepriceoftheTIpart(s)atissueinthisdocumentsoldbyTI
Addendum-Page1