Surface Science 1996: Vol 348 Index

15 Pages·1996·2.8 MB·English

pie.
surface science
Surface Science 348 (1996) 393-395
Author index
Arce, H., W.L. Moch4n and J.J. Gutiérrez, Minimum energy 2D Finnis, M.W., see Tan 348 (1996) 49
patterns of atoms adsorbed on a hexagonal lattice Frederick, B.G., M.B. Lee and N.V. Richardson, A vibrational
348 (1996) 379 characterisation of the O/AI(111) system: a reassignment of
Amault, J.C., J.L. Bubendorff, A. Pimpinelli and J.P. Bucher, HREELS data 348 (1996) L71
Transition in the growth kinetics of vacancy islands on Fritzsche, V., see Schaff 348 (1996) 89
NbSe, 348 (1996) 185
Gallego, S., see Cerd4 348 (1996) 197
Baberschke, K., see Ritter 348 (1996) 243 Gamble, L., L.S. Jung and C.T. Campbell, Decomposition and
Bailes III, A.A., see Boshart 348 (1996) L75 protonation of surface ethoxys on TiO,(110) 348 (1996) 1
Barrera, A., see Rar 348 (1996) 77 Gao, Y., Y. Liang and S.A. Chambers, Synthesis and characteriza-
Barteau, M.A., see Idriss 348 (1996) 39 tion of Nb-doped TiO,(110) surfaces by molecular beam
Barteau, M.A., see Shekhar 348 (1996) 55 epitaxy 348 (1996) 17
Barth, J.V., R. Schuster, RJ. Behm and G. Ertl, The system Ge, Q., see Nerlov 348 (1996) 28
K/Au(111): adsorption and surface restructuring Glass, J.A., Jr., E.A. Wovchko and J.T. Yates, Jr., Reaction of
348 (1996) 280 atomic hydrogen with hydrogenated porous silicon — detection
Behm, R.J., see Barth 348 (1996) 280 of precursor to silane formation 348 (1996) 325
Boshart, M.A., A.A. Bailes III and L.E. Seiberling, A channeled Goering, E., see Goschke 348 (1996) 305
ion energy loss study of the surfactant-mediated growth of Ge Goringe, C.M., see Mayne 348 (1996) 209
on Si( 100) 348 (1996) L75 Goschke, R.A., K. Vey, M. Meier, U. Walter, E. Goering. M.
Bowker, M., see Li 348 (1996) 67 Klemm and S. Hom, Tip induced changes of atomic scale
Bradshaw, A.M., see Schaff 348 (1996) 89 images of the vanadiumpentoxide surface 348 (1996) 305
Briggs, G.A.D., see Mayne 348 (1996) 209 Gutiérrez, J.J., see Arce 348 (1996) 379
Bronikowski, M.J. and R.J. Hamers, The chemistry of gallium
deposition on Si(001) from trimethylgallium: an atomically Hamers, R.J., see Bronikowski 348 (19963)1 1
resolved STM study 348 (1996) 311 Hara, S., see Ikemiya 348 (1996) 253
Bubendorff, J.L., see Arnault 348 (1996) 185 Hasegawa, Y., see Yamamoto 348 (1996) 133
Bucher, J.P., see Arnault 348 (1996) 185 Hirose, K., see Kobayashi 348 (1996) 299
Hofmann, Ph., see Schaff 348 (1996) 89
Campbell, C.T., see Gamble 348 (1996) 1 Horio, Y. and A. Ichimiya, Wave fields in Si({111) layers under
Cerda, J., S. Gallego and P.L. de Andres, Fast first-order perturba- RHEED conditions 348 (1996) 344
tion approach to the surface structural problem using low Horn, S., see Goschke 348 (1996) 305
energy electron diffraction 348 (1996) 197 Horsfield, A.P., see Tan 348 (1996) 49
Chambers, S.A., see Gao 348 (1996) 17 Huang, H.H., C.S. Seet, C.S. Sreekanth and G.Q. Xu, Migration
Chiang, T.-C., see Roesler 348 (1996) 161 of H-atoms from metal interface to adsorbed metal carbonyl
Comsa, G., see Wulfhekel 348 (1996) 227 layers 348 (1996) 192
Daolio, S., see Krist6f 348 (1996) 287 Ichimiya, A., see Horio 348 (1996) 344
Davis, R., see Schaff 348 (1996) 89 Idriss, H., V.S. Lusvardi and M.A. Barteau, Two routes to
De Andres, P.L., see Cerda 348 (1996) 197 formaldehyde from formic acid on TiO,(001) surfaces
Doraiswamy, N. and L.D. Marks, Electron beam induced small 348 (1996) 39
particle transformations: temperature 348 (1996) L67 Ikemiya, N., K. Yamada and S. Hara, Initial stage of the elec-
trodeposition of Ag on Au(100) observed by in-situ atomic
Ertl, G., see Barth 348 (1996) 280 force microscopy 348 (1996) 253
Facchin, B., see Kristof 348 (1996) 287 Jenks, C.J., S. Rishi and P.A. Thiel, Effectiveness of a fluorinated
Farle, M., see Ritter 348 (1996) 243 nickel surface in catalyzing the decomposition of a perfluo-
Fernandez, V., see Schaff 348 (1996) 89 ropolyether analog 348 (1996) 175
394 Author index
Jones, R.G., see Walter 348 (1996) 115 Pennec, Y. and A. Khater, A method for characterizing the
Jorritsma, L.C., see Wulfhekel 348 (19962)2 7 localized dynamics of boundary defects in crystalline
Jung, L.S., see Gamble 348 (1996) 1 systems 348 (1996) L82
Piccirillo, C., see Krist6f 348 (1996) 287
Khater, A., see Pennec 348 (1996) L82 Pimpinelli, A., see Arault 348 (1996) 185
Klemm, M., see Goschke 348 (1996) 305 Plotka, P., see Nishizawa 348 (1996) 105
Kliewer, J., see Wulfhekel 348 (1996) 227 Poelsema, B., see Wulfhekel 348 (1996) 227
Knutsen, K. and T.M. Orlando, Low-energy (5-80 eV) electron-
stimulated desorption of H*(D*), OH*(OD*), O*, and NO* Rar, A., H. Sugimura, A. Barrera, Y. Ohno and T. Matsushima,
from solution-grown NaNO, crystals 348 (1996) 143 Angular and velocity distributions of desorbing product carbon
Kobayashi, N., K. Hirose and M. Tsukada, First-principles study dioxide from different reaction sites on stepped platinum
of Na atom transfer induced by the tip of a STM (112) 348 (1996)7 7
348 (1996) 299 Richardson, N.V., see Frederick 348 (1996) L71
Kokko, K., P.T. Salo, R. Laihia and K. Mansikka, First-principles Rishi, S., see Jenks 348 (1996) 175
calculations for work function and surface energy of thin Ritter, M., M. Stindtmann, M. Farle and K. Baberschke, Nanos-
lithium films 348 (1996) 168 tructuring of the Cu(001) surface by ion bombardment: a STM
Komeda, T., Y. Morita and H. Tokumoto, Surface roughening and study 348 (1996) 243
metastable superstructures on wet-processed Si{111) surface Roesler, J.M., T. Miller and T.-C. Chiang, Structure determination
induced by hydrogen desorption 348 (1996) 153 of ordered 1 /3-monolayer Pb on Ge(111) by photoelectron
Krist6f, J., S. Daolio, C. Piccirillo, B. Facchin and J. Mink, holography 348 (1996) 161
Investigation on the formation of RuO, film electrode by Rokuta, E., see Yamamoto 348 (1996) 133
secondary ion mass spectrometry 348 (1996) 287 Rosenfeld, G., see Wulfhekel 348 (1996) 227
Laihia, R., see Kokko 348 (1996) 168
Sakai, H., How does a slab-shaped solid melt? 348 (1996) 387
Lee, M.B., see Frederick 348 (1996) L71 Sakuraba, H., see Nishizawa 348 (1996) 105
Li, Y. and M. Bowker, The adsorption and decomposition of Salo, P.T., see Kokko 348 (1996) 168
nitrous oxiond Rh(e11 0) and Rh(111) 348 (1996)6 7
Schaff, O., V. Fernandez, Ph. Hofmann, K.-M. Schindler, A.
Liang, Y., see Gao 348 (1996) 17
Theobald, V. Fritzsche, A.M. Bradshaw, R. Davis and D.P.
Lipkin, N.N., see Wulfhekel 348 (1996) 227
Woodruff, Coverage-dependent changes in the adsorption ge-
Lusvardi, V.S., see Idriss 348 (1996) 39
ometry of benzene on Ni{11 1} 348 (1996) 89
Schindler, K.-M., see Schaff 348 (1996) 89
Manolopoulos, D.E., see Walter 348 (19961)1 5
Mansikka, K., see Kokko 348 (19961)6 8 Schmidt, U., S. Vinzelberg and G. Staikov, Pb UPD on Ag(100)
Marks, L.D., see Doraiswamy 348 (1996) L67 and Au(100) — 2D phase formation studied by in situ STM
Matsushima, T., see Rar 348 (1996) 77 348 (1996) 261
Mayne, AJ., C.M. Goringe, C.W. Smith and G.A.D. Briggs, Schuster, R., see Barth 348 (1996) 280
Statistical analysis of adsorbates 348 (1996) 209 Seet, C.S., see Huang 348 (1996) 192
Seiberling, L.E., see Boshart 348 (1996) L75
Meier, M., see Goschke 348 (1996) 305
Shekhar, R. and M.A. Barteau, Ring-opening reactions of ethylene
Miller, T., see Roesler 348 (1996) 161
oxide on Pd(110) surfaces 348 (1996) 55
Mink, J., see Kristéf 348 (1996) 287
Smith, C.W., see Mayne 348 (1996) 209
Minoda, H., see Suzuki 348 (1996) 335
Sreekanth, C.S., see Huang 348 (1996) 192
Mochan, W.L., see Arce 348 (1996) 379
Moller, P.J., see Nerlov 348 (1996) 28 Sroubek, Z. and H. Oechsner, Experimental studies of ionization
Morita, Y., see Komeda 348 (1996) 153 processes in sputtering of GaAs 348 (1996) 100
Staikov, G., see Schmidt 348 (1996) 261
Nagao, T., see Yamamoto 348 (1996) 133 Steinriick, H.-P., see Stichler 348 (1996) 370
Nerlov, J., Q. Ge and P.J. Maller, Resonant photoemission from Stichler, M., P. Zebisch, M. Weinelt and H.-P. Steinriick, Argon
TiO,(110) surfaces: implications on surface bonding and hy- desorption as a tool to study the growth of molecular layers
bridization 348 (1996) 28 348 (1996) 370
Nishizawa, J., Y. Oyama, P. Plotka and H. Sakuraba, Optimiza- Stindtmann, M., see Ritter 348 (1996) 243
tion of low temperature surface treatment of GaAs crystal Sugimura, H., see Rar 348 (1996) 77
348 (1996) 105 Sugino, O., see Yamauchi 348 (1996) L70
Sutton, A.P., see Tan 348 (1996) 49
Oechsner, H., see Sroubek 348 (1996) 100 Suzuki, T., H. Minoda, Y. Tanishiro and K. Yagi, REM study of
Ohno, Y., see Rar 348 (1996)7 7 high index Si(5 5 12) flat surfaces 348 (1996) 335
Orlando, T.M., see Knutsen 348 (1996) 143
Oshima, C., see Yamamoto 348 (1996) 133 Tan, K.E., M.W. Finnis, A.P. Horsfield and A.P. Sutton, Why
Otani, S., see Yamamoto 348 (1996) 133 TiC(111) is observed to be Ti terminated 348 (1996) 49
Oyama, Y., see Nishizawa 348 (1996) 105 Tanishiro, Y., see Suzuki 348 (1996) 335
Author index 395
Theobald, A., see Schaff 348 (1996) 89 Wulfhekel, W., N.N. Lipkin, J. Kliewer, G. Rosenfeld, L.C.
Thiel, P.A., see Jenks 348 (1996) 175 Jorritsma, B. Poelsema and G. Comsa, Conventional and
Tokumoto, H., see Komeda 348 (1996) 153 manipulated growth of Cu /Cu(111) 348 (1996) 227
Trenary, M., see Yamamoto 348 (1996) 133
Tsukada, M., see Yamauchi 348 (1996) L70 Xu, G.Q., see Huang 348 (1996) 192
Tsukada, M., see Kobayashi 348 (1996) 299
Yagi, K., see Suzuki 348 (1996) 335
Vey, K., see Goschke 348 (1996) 305
Yamada, K., see Ikemiya 348 (1996) 253
Vinzelberg, S., see Schmidt 348 (1996) 261
Yamamoto, N., E. Rokuta, Y. Hasegawa, T. Nagao, M. Trenary,
C. Oshima and S. Otani, Oxygen adsorption sites on the
Walter, U., see Goschke 348 (1996) 305
PrB,(100) and LaB,(100) surfaces 348 (1996) 133
Walter, W.K., D.E. Manolopoulos and R.G. Jones, Chlorine ad-
sorption and diffusion on Cu(111) 348 (1996) 115 Yamauchi, J., M. Tsukada, S. Watanabe and O. Sugino, Erratum
to ‘‘First principles study on energetics of cBN(001) recon-
Watanabe, S., see Yamauchi 348 (1996) L70
Weare, C.B. and J.A. Yarmoff, Resonant neutralization of ’Li* structed surfaces’’ [Surface Science 341 (1995) L1037]
scattered from alkali/AI(100) as a probe of the local electro- 348 (1996) L70
static potential 348 (1996) 359 Yarmoff, J.A., see Weare 348 (1996) 359
Yates, J.T., see Glass 348 (1996) 325
Weinelt, M., see Stichler 348 (1996) 370
Woodruff, D.P., see Schaff 348 (1996) 89
Wovchko, E.A., see Glass 348 (1996) 325 Zebisch, P., see Stichler 348 (1996) 370
te oe
surface science
a s
ELSEVIER Surface Science 348 (1996) 396-401
Subject index
Equilibrium thermodynamics and statistical mechanics
THEORETICAL METHODS, MODELS AND TECH-
NIQUES H. Arce, W.L. Mochan and J.J. Gutiérrez, Minimum energy 2D
Atom-solid interactions, scattering, diffraction patterns of atoms adsorbed on a hexagonal lattice
348 (1996) 379
H. Arce, W.L. Mochdn and J.J. Gutiérrez, Minimum energy 2D H. Sakai, How does a slab-shaped solid melt? 348 (1996) 387
patterns of atoms adsorbed on a hexagonal lattice
348 (1996) 379 Ion-solid interactions, scattering, channeling
Computer simulations M.A. Boshart, A.A. Bailes, III and L.E. Seiberling, A channeled
ion energy loss study of the surfactant-mediated growth of Ge
K.E. Tan, M.W. Finnis, A.P. Horsfield and A.P. Sutton, Why on Si(100) 348 (1996) L75
TiC(1 11) is observed to be Ti terminated 348 (1996) 49
K. Kokko, P.T. Salo, R. Laihia and K. Mansikka, First-principles Models of non-equilibrium phenomena
calculations for work function and surface energy of thin W.K. Walter, D.E. Manolopoulos and R.G. Jones, Chlorine ad-
lithium films 348 (1996) 168 sorption and diffusion on Cu(111) 348 (1996) 115
M.A. Boshart, A.A. Bailes, III and L.E. Seiberling, A channeled
ion energy loss study of the surfactant-mediated growth of Ge Models of surface kinetics
on Si( 100) 348 (1996) L75
W.K. Walter, D.E. Manolopoulos and R.G. Jones, Chlorine ad-
. Kobayashi, K. Hirose and M. Tsukada, First-principles study sorption and diffusion on Cu(111) 348 (1996) 115
of Na atom transfer induced by the tip of a STM
A.J. Mayne, C.M. Goringe, C.W. Smith and G.A.D. Briggs,
348 (1996) 299 Statistical analysis of adsorbates 348 (1996) 209
Density functional calculations
Molecular dynamics
J. Yamauchi, M. Tsukada, S. Watanabe and O. Sugino, Erratum to
K. Kokko, P.T. Salo, R. Laihia and K. Mansikka, First-principles
‘‘First principles study on energetics of cBN(001) recon-
calculations for work function and surface energy of thin
structed surfaces’’ [Surface Science 341 (1995) L1037]
lithium films 348 (1996) 168
348 (1996) L70
. Kokko, P.T. Salo, R. Laihia and K. Mansikka, First-principles Semi-empirical models and model calculations
calculations for work function and surface energy of thin
K.E. Tan, M.W. Finnis, A.P. Horsfield and A.P. Sutton, Why
lithium films 348 (1996) 168
TiC(111) is observed to be Ti terminated 348 (1996) 49
. Kobayashi, K. Hirose and M. Tsukada, First-principles study
of Na atom transfer induced by the tip of a STM EXPERIMENTAL SAMPLE PREPARATION AND CHAR-
348 (1996) 299 ACTERIZATION METHODS
Electron-solid interactions, scattering, diffraction Atom-solid scattering and diffraction — elastic
K. Knutsen and T.M. Orlando, Low-energy (5—80 eV) electron- W. Wulfhekel, N.N. Lipkin, J. Kliewer, G. Rosenfeld, L.C.
stimulated desorption of H*(D*), OH*(OD* ), O*, and NO* Jorritsma, B. Poelsema and G. Comsa, Conventional and
from solution-grown NaNO, crystals 348 (1996) 143 manipulated growth of Cu /Cu(111) 348 (1996) 227
J.M. Roesler, T. Miller and T.-C. Chiang, Structure determination
of ordered | /3-monolayer Pb on Ge(111) by photoelectron Atomic force microscopy
holography 348 (1996) 161 Y. Gao, Y. Liang and S.A. Chambers, Synthesis and characteriza-
J. Cerda, S. Gallego and P.L. de Andres, Fast first-order perturba- tion of Nb-doped TiO,(110) surfaces by molecular beam
tion approach to the surface structural problem using low epitaxy 348 (1996) 17
energy electron diffraction 348 (1996) 197 J.C. Amault, J.L. Bubendorff, A. Pimpinelli and J.P. Bucher,
Y. Horio and A. Ichimiya, Wave fields in Si{111) layers under Transition in the growth kinetics of vacancy islands on
RHEED conditions 348 (1996) 344 NbSe, 348 (1996) 185
Subject index 397
N. Ikemiya, K. Yamada and S. Hara, Initial stage of the electrode- W.K. Walter, D.E. Manolopoulos and R.G. Jones, Chlorine ad-
position of Ag on Au(100) observed by in-situ atomic force sorption and diffusion on Cu(111) 348 (1996) 115
microscopy 348 (1996) 253 N. Yamamoto, E. Rokuta, Y. Hasegawa, T. Nagao, M. Trenary,
C. Oshima and S. Otani, Oxygen adsorption sites on the
Auger electron spectroscopy PrB,(100) and LaB,(100) surfaces 348 (1996) 133
W.K. Walter, D.E. Manolopoulos and R.G. Jones, Chlorine ad- J. Cerda, S. Gallego and P.L. de Andres, Fast first-order perturba-
sorption and diffusion on Cu(111) 348 (1996) 115 tion approach to the surface structural problem using low
energy electron diffraction 348 (1996) 197
Chemical vapor deposition
Photoelectron diffraction
M.J. Bronikowski and R.J. Hamers, The chemistry of gallium
deposition on Si(001) from trimethylgallium: an atomically O. Schaff, V. Fernandez, Ph. Hofmann, K.-M. Schindler, A.
resolved STM study 348 (1996) 311 Theobald, V. Fritzsche, A.M. Bradshaw, R. Davis and D.P.
Woodruff, Coverage-dependent changes in the adsorption ge-
Desorption induced by electronic transitions (DIET) ometry of benzene on Ni{111} 348 (1996) 89
Electron stimulated desorption (ESD) Photoelectron holography
W.K. Walter, D.E. Manolopoulos and R.G. Jones, Chlorine ad- J.M. Roesler, T. Miller and T.-C. Chiang, Structure determination
sorption and diffusion on Cu(111) 348 (1996) 115 of ordered 1 /3-monolayer Pb on Ge(111) by photoelectron
K. Knutsen and T.M. Orlando, Low-energy (5-80 eV) electron- holography 348 (1996) 161
stimulated desorption of H*(D*), OH*(OD*), O*, and NO*
from solution-grown NaNO, crystals 348 (1996) 143 Reflection high-energy electron diffraction (RHEED)
T. Suzuki, H. Minoda, Y. Tanishiro and K. Yagi, REM study of
Electrical transport measurements
high index Si(5 5 12) flat surfaces 348 (1996) 335
J. Nishizawa, Y. Oyama, P. Plotka and H. Sakuraba, Optimization Y. Horio and A. Ichimiya, Wave fields in Si({111) layers under
of low temperature surface treatment of GaAs crystal RHEED conditions 348 (1996) 344
348 (1996) 105
Ion scattering spectroscopy
Electrochemical methods
High energy ion scattering (HEIS)
U. Schmidt, S. Vinzelberg and G. Staikov, Pb UPD on Ag(100)
M.A. Boshart, A.A. Bailes, III and L.E. Seiberling, A channeled
and Au(100) — 2D phase formation studied by in situ STM
ion energy loss study of the surfactant-mediated growth of Ge
348 (1996) 261
on Si(100) 348 (1996) L75
Electron energy loss spectroscopy Low energy ion scattering (LEIS)
N. Yamamoto, E. Rokuta, Y. Hasegawa, T. Nagao, M. Trenary,
C.B. Weare and J.A. Yarmoff, Resonant neutralization of ’Li*
C. Oshima and S. Otani, Oxygen adsorption sites on the
scattered from alkali /AK 100) as a probe of the local electro-
PrB,(100) and LaB,(100) surfaces 348 (1996) 133
static potential 348 (1996) 359
B.G. Frederick, M.B. Lee and N.V. Richardson, A vibrational
characterisation of the O/AK(111) system: a reassignment of Molecular beam epitaxy
HREELS data 348 (1996) L71
Y. Gao, Y. Liang and S.A. Chambers, Synthesis and characteriza-
Electron microscopy tion of Nb-doped TiO,(110) surfaces by molecular beam
epitaxy 348 (1996) 17
N. Doraiswamy and L.D. Marks, Electron beam induced small W. Wulfhekel, N.N. Lipkin, J. Kliewer, G. Rosenfeld, L.C.
particle transformations: temperature 348 (1996) L67
Jorritsma, B. Poelsema and G. Comsa, Conventional and
manipulated growth of Cu /Cu(111) 348 (1996) 227
Reflection electron microscopy (REM)
M.J. Bronikowski and R.J. Hamers, The chemistry of gallium
T. Suzuki, H. Minoda, Y. Tanishiro and K. Yagi, REM study of deposition on Si(001) from trimethylgallium: an atomically
high index Si(S 5 12) flat surfaces 348 (1996) 335 resolved STM study 348 (1996) 311
Electron-solid diffraction Molecule—solid reactions
Y. Gao, Y. Liang and S.A. Chambers, Synthesis and characteriza- W.K. Walter, D.E. Manolopoulos and R.G. Jones, Chlorine ad-
tion of Nb-doped TiO,(110) surfaces by molecular beam sorption and diffusion on Cu(111) 348 (1996) 115
epitaxy 348 (1996) 17
Photoelectron spectroscopy
Low energy electron diffraction (LEED)
Y. Gao, Y. Liang and S.A. Chambers, Synthesis and characteriza-
Y. Li and M. Bowker, The adsorption and decomposition of tion of Nb-doped TiO,(110) surfaces by molecular beam
nitrous oxiond Rhe(11 0) and Rh(111) 348 (1996) 67 epitaxy 348 (1996) 17
398 Subject index
H. Idriss, V.S. Lusvardi and M.A. Barteau, Two routes to R.A. Goschke, K. Vey, M. Meier, U. Walter, E. Goering, M.
formaldehyde from formic acid on TiO,(001) surfaces Klemm and S. Hom, Tip induced changes of atomic scale
348 (1996) 39 images of the vanadiumpentoxide surface 348 (1996) 305
M.J. Bronikowski and R.J. Hamers, The chemistry of gallium
Soft X-ray photoelectron spectroscopy (using synchrotron radia-
deposition on Si{001) from trimethylgallium: an atomically
tion) resolved STM study 348 (1996) 311
J. Nerlov, Q. Ge and P.J. Moller, Resonant photoemission from
Secondary ion mass spectroscopy
TiO,(1 10) surfaces: implications on surface bonding and hy-
bridization 348 (1996) 28
J.Krist6f, S. Daolio, C. Piccirillo, B. Facchin and J. Mink, Investi-
. Schaff, V. Fernandez, Ph. Hofmann, K.-M. Schindler, A. gation on the formation of RuO, film electrode by secondary
Theobald, V. Fritzsche, A.M. Bradshaw, R. Davis and D.P. ion mass spectrometry 348 (1996) 287
Woodruff, Coverage-dependent changes in the adsorption ge-
ometry of benzene on Ni{111} 348 (1996) 89 Thermal desorption spectroscopy
J.M. Roesler, T. Miller and T.-C. Chiang, Structure determination
of ordered | /3-monolayer Pb on Ge(111) by photoelectron L. Gamble, L.S. Jung and C.T. Campbell, Decomposition and
holography 348 (1996) 161 protonation of surface ethoxys on TiO,(1 10) 348 (1996) |
R. Shekhar and M.A. Barteau, Ring-opening reactions of ethylene
Visible and ultraviolet photoelectron spectroscopy oxide on Pd(110) surfaces 348 (1996) 55
K.E. Tan, M.W. Finnis, A.P. Horsfield and A.P. Sutton, Why A. Rar, H. Sugimura, A. Barrera, Y. Ohno and T. Matsushima,
TiC(111) is observed to be Ti terminated 348 (1996) 49 Angular and velocity distributions of desorbing product carbon
dioxide from different reaction sites on stepped platinum
X-ray photoelectron spectroscopy (112) 348 (1996)7 7
W.K. Walter, D.E. Manolopoulos and R.G. Jones, Chlorine ad-
L. Gamble, L.S. Jung and C.T. Campbell, Decomposition and
protonation of surface ethoxys on TiO,(1 10) 348 (1996) | sorption and diffusion on Cu(1 11) 348 (1996) 115
C.J. Jenks, S. Rishi and P.A. Thiel, Effectiveness of a fluorinated
Y. Li and M. Bowker, The adsorption and decomposition of
nickel surface in catalyzing the decomposition of a perfluo-
nitrous oxide on Rh(110a)n d Rh(111) 348 (1996)6 7
ropolyether analog 348 (1996) 175
J. Nishizawa, Y. Oyama, P. Plotka and H. Sakuraba, Optimization
H.H. Huang, C.S. Seet, C.S. Sreekanth and G.Q. Xu, Migration of
of low temperature surface treatment of GaAs crystal
H-atoms from metal interface to adsorbed metal carbonyl
348 (1996) 105
layers 348 (1996) 192
Photon absorption spectroscopy M. Stichler, P. Zebisch, M. Weinelt and H.-P. Steinriick, Argon
desorption as a tool to study the growth of molecular layers
Infrared absorption spectroscopy
348 (1996) 370
J.A. Glass, Jr., E.A. Wovchko and J.T. Yates, Jr., Reaction of
PHENOMENA
atomic hydrogen with hydrogenated porous silicon — detection
of precursor to silane formation 348 (1996) 325
Adsorption kinetics
Scanning tunneling microscopy
W.K. Walter, D.E. Manolopoulos and R.G. Jones, Chlorine ad-
T. Komeda, Y. Morita and H. Tokumoto, Surface roughening and sorption and diffusion on Cu(111) 348 (1996) 115
metastable superstructures on wet-processed Si(111) surface AJ. Mayne, C.M. Goringe, C.W. Smith and G.A.D. Briggs,
induced by hydrogen desorption 348 (1996) 153 Statistical analysis of adsorbates 348 (1996) 209
J.C. Amault, J.L. Bubendorff, A. Pimpinelli and J.P. Bucher, M. Stichler, P. Zebisch, M. Weinelt and H.-P. Steinriick, Argon
Transition in the growth kinetics of vacancy islands on desorption as a tool to study the growth of molecular layers
NbSe, 348 (1996) 185 348 (1996) 370
AJ. Mayne, C.M. Goringe, C.W. Smith and G.A.D. Briggs,
Statistical analysis of adsorbates 348 (1996) 209 Atom emission
M. Ritter, M. Stindtmann, M. Farle and K. Baberschke, Nano-
Z. Sroubek and H. Oechsner, Experimental studies of ionization
structuring of the Cu(001) surface by ion bombardment: a
STM study 348 (1996) 243 processes in sputtering of GaAs 348 (1996) 100
U. Schmidt, S. Vinzelberg and G. Staikov, Pb UPD on Ag(100) Atom-solid interactions
and Au(100) — 2D phase formation studied by in situ STM
348 (1996) 261 Z. Sroubek and H. Oechsner, Experimental studies of ionization
J.V. Barth, R. Schuster, RJ. Behm and G. Ertl, The system processes in sputtering of GaAs 348 (1996) 100
K/Au(111): adsorption and surface restructuring W.K. Walter, D.E. Manolopoulos and R.G. Jones, Chlorine ad-
348 (1996) 280 sorption and diffusion on Cu(111) 348 (1996) 115
N. Kobayashi, K. Hirose and M. Tsukada, First-principles study H. Arce, W.L. Mochan and J.J. Gutiérrez, Minimum energy 2D
of Na atom transfer induced by the tip of a STM patterns of atoms adsorbed on a hexagonal lattice
348 (1996) 299 348 (1996) 379
Subject index 399
Catalysis H.H. Huang, C.S. Seet, C.S. Sreekanth and G.Q. Xu, Migration of
H-atoms from metal interface to adsorbed metal carbonyl
R. Shekhar and M.A. Barteau, Ring-opening reactions of ethylene
layers 348 (1996) 192
oxide on Pd(110) surfaces 348 (1996) 55
Y. Li and M. Bowker, The adsorption and decomposition of Electron-solid interactions
nitrous oxideo n Rh(110) and Rh(111) 348 (1996) 67
N. Doraiswamy and L.D. Marks, Electron beam induced small
Chemisorption particle transformations: temperature 348 (1996) L67
J. Cerda, S. Gallego and P.L. de Andres, Fast first-order perturba-
. Gamble, L.S. Jung and C.T. Campbell, Decomposition and
tion approach to the surface structural problem using low
protonation of surface ethoxys on TiO,(110) 348 (1996) 1
energy electron diffraction 348 (1996) 197
. Shekhar and M.A. Barteau, Ring-opening reactions of ethylene
oxide on Pd(110) surfaces 348 (1996) 55 Electron stimulated desorption
. Li and M. Bowker, The adsorption and decomposition of
nitrous oxiond Rh(e11 0) and Rh(111) 348 (1996) 67 W.K. Walter, D.E. Manolopoulos and R.G. Jones, Chlorine ad-
sorption and diffusion on Cu(111) 348 (1996) 115
. Schaff, V. Fernandez, Ph. Hofmann, K.-M. Schindler, A.
Theobald, V. Fritzsche, A.M. Bradshaw, R. Davis and D.P. Epitaxy
Woodruff, Coverage-dependent changes in the adsorption ge-
ometry of benzene on Ni{1 11} 348 (1996) 89 M.A. Boshart, A.A. Bailes, III and L.E. Seiberling, A channeled
W.K. Walter, D.E. Manolopoulos and R.G. Jones, Chlorine ad- ion energy loss study of the surfactant-mediated growth of Ge
sorption and diffusion on Cu(111) 348 (1996) 115 on Si(100) 348 (1996L)7 5
B.G. Frederick, M.B. Lee and N.V. Richardson, A vibrational N. Ikemiya, K. Yamada and S. Hara, Initial stage of the electrode-
characterisation of the O/AK111) system: a reassignment of position of Ag on Au(100) observed by in-situ atomic force
microscopy 348 (1996) 253
HREELS data 348 (1996) L71
. Schmidt, S. Vinzelberg and G. Staikov, Pb UPD on Ag(100) U. Schmidt, S. Vinzelberg and G. Staikov, Pb UPD on Ag(100)
and Au(100) - 2D phase formation studied by in situ STM
and Au(100) — 2D phase formation studied by in situ STM
348 (1996) 261 348 (1996) 261
J.V. Barth, R. Schuster, R.J. Behm and G. Ertl, The system M.J. Bronikowski and R.J. Hamers, The chemistry of gallium
deposition on Si(001) from trimethylgallium: an atomically
K/Au(111): adsorption and surface restructuring
348 (1996) 280 resolved STM study 348 (1996) 311
M.J. Bronikowski and R.J. Hamers, The chemistry of gallium Etching
deposition on Si(001) from trimethylgallium: an atomically
resolved STM study 348 (1996) 311 J.A. Glass, Jr., E.A. Wovchko and J.T. Yates, Jr., Reaction of
J.A. Glass, Jr., E.A. Wovchko and J.T. Yates, Jr., Reaction of atomic hydrogen with hydrogenated porous silicon — detection
atomic hydrogen with hydrogenated porous silicon — detection of precursor to silane formation 348 (1996) 325
of precursor to silane formation 348 (1996) 325
Faceting
Compound formation
T. Suzuki, H. Minoda, Y. Tanishiro and K. Yagi, REM study of
W.K. Walter, D.E. Manolopoulos and R.G. Jones, Chlorine ad- high index Si(5S 5 12) flat surfaces 348 (1996) 335
sorption and diffusion on Cu(1 11) 348 (1996) 115
Field evaporation
J.V. Barth, R. Schuster, R.J. Behm and G. Ertl, The system
K/Au(i11): adsorption and surface restructuring N. Kobayashi, K. Hirose and M. Tsukada, First-principles study
348 (1996) 280 of Na atom transfer induced by the tip of a STM
348 (1996) 299
Corrosion
Growth
W.K. Walter, D.E. Manolopoulos and R.G. Jones, Chlorine ad-
sorption and diffusion on Cu(111) 348 (1996) 115 J.C. Amault, J.L. Bubendorff, A. Pimpinelli and J.P. Bucher,
Transition in the growth kinetics of vacancy islands on
Crystallization
NbSe, 348 (1996) 185
U. Schmidt, S. Vinzelberg and G. Staikov, Pb UPD on Ag(100) W. Wulfhekel, N.N. Lipkin, J. Kliewer, G. Rosenfeld, L.C.
and Au(100) - 2D phase formation studied by in situ STM Jorritsma, B. Poelsema and G. Comsa, Conventional and
348 (1996) 261 manipulated growth of Cu/Cu(111) 348 (1996) 227
M. Stichler, P. Zebisch, M. Weinelt and H.-P. Steinriick, Argon
Diffusion and migration
desorption as a tool to study the growth of molecular layers
W.K. Walter, D.E. Manolopoulos and R.G. Jones, Chlorine ad- 348 (1996) 370
sorption and diffusion on Cu(111) 348 (1996) 115
Ion bombardment
J.C. Amault, J.L. Bubendorff, A. Pimpinelli and J.P. Bucher,
Transition in the growth kinetics of vacancy islands on Z. Sroubek and H. Oechsner, Experimental studies of ionization
NbSe, 348 (1996) 185 processes in sputtering of GaAs 348 (1996) 100
400 Subject index
W. Wulfhekel, N.N. Lipkin, J. Kliewer, G. Rosenfeld, L.C. Surface diffusion
Jorritsma, B. Poelsema and G. Comsa, Conventional and
manipulated growth of Cu/Cu(111) 348 (1996) 227 W. Wulfhekel, N.N. Lipkin, J. Kliewer, G. Rosenfeld, L.C.
M. Ritter, M. Stindtmann, M. Farle and K. Baberschke, Nano- Jorritsma, B. Poelsema and G. Comsa, Conventional and
structuring of the Cu(001) surface by ion bombardment: a manipulated growth of Cu /Cu(111) 348 (1996) 227
STM study 348 (1996) 243 Surface electronic phenomena (work function, surface poten-
tial, surface states, etc.)
Ion emission
K. Kokko, P.T. Salo, R. Laihia and K. Mansikka, First-principles
Z. Sroubek and H. Oechsner, Experimental studies of ionization
processes in sputtering of GaAs 348 (1996) 100 calculations for work function and surface energy of thin
lithium films 348 (1996) 168
lon-solid interactions Y. Horio and A. Ichimiya, Wave fields in Si{111) layers under
RHEED conditions 348 (1996) 344
Z. Sroubek and H. Oechsner, Experimental studies of ionization
C.B. Weare and J.A. Yarmoff, Resonant neutralization of ’Li*
processes in sputtering of GaAs 348 (1996) 100
scattered from alk/aAlK 1i00 ) as a probe of the local electro-
C.B. Weare and J.A. Yarmoff, Resonant neutralization of ’Li*
static potential 348 (1996) 359
scattered from alkali /AK100) as a probe of the local electro-
static potential 348 (1996) 359 Surface energy
Oxidation J. Yamauchi, M. Tsukada, S. Watanabe and O. Sugino, Erratum to
‘*First principles study on energetics of cBN(001) recon-
N. Yamamoto, E. Rokuta, Y. Hasegawa, T. Nagao, M. Trenary,
structed surfaces’ [Surface Science 341 (1995) L1037]
C. Oshima and S. Otani, Oxygen adsorption sites on the 348 (1996) L70
PrB,(100) and LaB,(100) surfaces 348 (1996) 133
K. Kokko, P.T. Salo, R. Laihia and K. Mansikka, First-principles
B.G. Frederick, M.B. Lee and N.V. Richardson, A vibrational
calculations for work function and surface energy of thin
characterisation of the O/AK111) system: a reassignment of lithium films 348 (1996) 168
HREELS data 348 (1996) L71
Surface melting
Photoelectron diffraction
H. Sakai, How does a slab-shaped solid melt? 348 (1996) 387
O. Schaff, V. Fernandez, Ph. Hofmann, K.-M. Schindler, A.
Theobald, V. Fritzsche, A.M. Bradshaw, R. Davis and D.P. Surface relaxation and reconstruction
Woodruff, Coverage-dependent changes in the adsorption ge-
J. Yamauchi, M. Tsukada, S. Watanabe and O. Sugino, Erratum to
ometry of benzeneo n Ni{1 11} 348 (1996) 89
‘*First principles study on energetics of cBN(001) recon-
Physical adsorption structed surfaces’’ [Surface Science 341 (1995) L1037]
348 (1996) L70
W.K. Walter, D.E. Manolopoulos and R.G. Jones, Chlorine ad- J. Nerlov, Q. Ge and P.J. Meller, Resonant photoemission from
sorption and diffuosn iCuo(1n11 ) 348 (19961)1 5
TiO,(1 10) surfaces: implications on surface bonding and hy-
Sputtering bridization 348 (1996) 28
. Kokko, P.T. Salo, R. Laihia and K. Mansikka, First-principles
Z. Sroubek and H. Oechsner, Experimental studies of ionization calculations for work function and surface energy of thin
processes in sputtering of GaAs 348 (1996) 100 lithium films 348 (1996) 168
R.A. Goschke, K. Vey, M. Meier, U. Walter, E. Goering, M.
Surface chemical reaction
Klemm and S. Hom, Tip induced changes of atomic scale
L. Gamble, L.S. Jung and C.T. Campbell, Decomposition and images of the vanadiumpentoxide surface 348 (1996) 305
protonation of surface ethoxys on TiO,(110) 348 (1996) 1
Surface roughening
R. Shekhar and M.A. Barteau, Ring-opening reactions of ethylene
oxide on Pd(1 10) surfaces 348 (1996) 55 T. Suzuki, H. Minoda, Y. Tanishiro and K. Yagi, REM study of
A. Rar, H. Sugimura, A. Barrera, Y. Ohno and T. Matsushima, high index Si(5 5 12) flat surfaces 348 (1996) 335
Angular and velocity distributions of desorbing product carbon
dioxide from different reaction sites on stepped platinum Surface structure, morphology, roughness, and topography
(112) 348 (1996)7 7 J. Yamauchi, M. Tsukada, S. Watanabe and O. Sugino, Erratum to
J. Nishizawa, Y. Oyama, P. Plotka and H. Sakuraba, Optimization ‘First principles study on energetics of cBN(001) recon-
of low temperature surface treatment of GaAs crystal structed surfaces’ [Surface Science 341 (1995) L1037]
348 (1996) 105 348 (1996) L70
W.K. Walter, D.E. Manolopoulos and R.G. Jones, Chlorine ad- W.K. Walter, D.E. Manolopoulos and R.G. Jones, Chlorine ad-
sorption and diffusion on Cu(1 11) 348 (1996) 115 sorption and diffusion on Cu(111) 348 (1996) 115
M.J. Bronikowski and R.J. Hamers, The chemistry of gallium T. Komeda, Y. Morita and H. Tokumoto, Surface roughening and
deposition on Si{001) from trimethylgallium: an atomically metastable superstructures on wet-processed Si({111) surface
resolved STM study 348 (1996) 311 induced by hydrogen desorption 348 (1996) 153
Subject index
J.M. Roesler, T. Miller and T.-C. Chiang, Structure determination Surface waves
of ordered | /3-monolayer Pb on Ge(111) by photoelectron
holography 348 (1996) 161 Phonons
J.C. Amault, J.L. Bubendorff, A. Pimpinelli and J.P. Bucher,
N. Yamamoto, E. Rokuta, Y. Hasegawa, T. Nagao, M. Trenary,
Transition in the growth kinetics of vacancy islands on
C. Oshima and S. Otani, Oxygen adsorption sites on the
NbSe, 348 (1996) 185
PrB,(100) and LaB,(100) surfaces 348 (1996) 133
J. Cerda, S. Gallego and P.L. de Andres, Fast first-order perturba-
tion approach to the surface structural problem using low Thermal desorption
energy electron diffraction 348 (1996) 197
M.A. Boshart, A.A. Bailes, III and L.E. Seiberling, A channeled K.E. Tan, M.W. Finnis, A.P. Horsfield and A.P. Sutton, Why
ion energy loss study of the surfactant-mediated growth of Ge TiC(1 11) is observed to be Ti terminated 348 (1996) 49
on Si( 100) 348 (1996) L75 A. Rar, H. Sugimura, A. Barrera, Y. Ohno and T. Matsushima,
J.V. Barth, R. Schuster, R.J. Behm and G. Ertl, The system Angular and velocity distributions of desorbing product carbon
K/Au(111): adsorption and surface restructuring dioxide from different reaction sites on stepped platinum
348 (1996) 280 (112) 348 (1996)7 7
W.K. Walter, D.E. Manolopoulos and R.G. Jones, Chlorine ad-
Surface thermodynamics (including phase transitions) sorption and diffusion on Cu(111) 348 (1996) 115
J. Yamauchi, M. Tsukada, S. Watanabe and O. Sugino, Erratum to Vibrations of adsorbed molecules
‘*First principles study on energetics of cBN(001) recon-
structed surfaces’ [Surface Science 341 (1995) L1037] B.G. Frederick, M.B. Lee and N.V. Richardson, A vibrational
348 (1996) L70 characterisation of the O/AI(111) system: a reassignment of
. Komeda, Y. Morita and H. Tokumoto, Surface roughening and HREELS data 348 (1996) L71
metastable superstructures on wet-processed Si(111) surface
Wetting
induced by hydrogen desorption 348 (1996) 153
. Schmidt, S. Vinzelberg and G. Staikov, Pb UPD on Ag(100) M. Stichler, P. Zebisch, M. Weinelt and H.-P. Steinriick, Argon
and Au(100) — 2D phase formation studied by in situ STM desorption as a tool to study the growth of molecular layers
348 (1996) 261 348 (1996) 370
surface science
ELSEVIER Surface Science 348 (1996) 402-406
Materials index
M. Ritter, M. Stindtmann, M. Farle and K. Baberschke, Nano-
ELEMENTAL AND CHEMICAL IDENTITY
structuring of the Cu(001) surface by ion bombardment: a
Elements STM study 348 (1996) 243
Alkali metals Germanium
J.M. Roesler, T. Miller and T.-C. Chiang, Structure determination
K. Knutsen and T.M. Orlando, Low-energy (S—80 eV) electron-
of ordered | /3-monolayer Pb on Ge(111) by photoelectron
stimulated desorption of H*(D*), OH*(OD*), O*, and NO*
holography 348 (1996) 161
from solution-grown NaNO, crystals 348 (1996) 143
. Kokko, P.T. Salo, R. Laihia and K. Mansikka, First-principles Gold
calculations for work function and surface energy of thin
N. Ikemiya, K. Yamada and S. Hara, Initial stage of the electrode-
lithium films 348 (1996) 168
position of Ag on Au(100) observed by in-situ atomic force
J.V. Barth, R. Schuster, R.J. Behm and G. Ertl, The system
microscopy 348 (1996) 253
K /Au(111): adsorption and surface restructuring
348 (1996) 280 J.V. Barth, R. Schuster, R.J. Behm and G. Ertl, The system
K/Au(111): adsorption and surface restructuring
N. Kobayashi, K. Hirose and M. Tsukada, First-principles study
348 (1996) 280
of Na atom transfer induced by the tip of a STM
348 (1996) 299 Hydrogen
C.B. Weare and J.A. Yarmoff, Resonant neutralization of ‘Li*
H.H. Huang, C.S. Seet, C.S. Sreekanth and G.Q. Xu, Migration of
scattered from alkali /AI(100) as a probe of the local electro-
H-atoms from metal interface to adsorbed metal carbonyl
static potential 348 (1996) 359
layers 348 (1996) 192
H. Arce, W.L. Mochan and J.J. Gutiérrez, Minimum energy 2D
J.A. Glass, Jr., E.A. Wovchko and J.T. Yates, Jr., Reaction of
patterns of atoms adsorbed on a hexagonal lattice
atomic hydrogen with hydrogenated porous silicon — detection
348 (1996) 379
of precursor to silane formation 348 (1996) 325
Aluminum Lead
B.G. Frederick, M.B. Lee and N.V. Richardson, A vibrational
J.M. Roesler, T. Miller and T.-C. Chiang, Structure determination
characterisation of the O/AK111) system: a reassignment of
of ordered 1 /3-monolayer Pb on Ge(111) by photoelectron
HREELS data 348 (1996) L71
holography 348 (1996) 161
M.J. Bronikowski and R.J. Hamers, The chemistry of gallium
deposition on Si(001) from trimethylgallium: an atomically Nickel
resolved STM study 348 (1996) 311
O. Schaff, V. Femandez, Ph. Hofmann, K.-M. Schindler, A.
C.B. Weare and J.A. Yarmoff, Resonant neutralization of ’Li* Theobald, V. Fritzsche, A.M. Bradshaw, R. Davis and D.P.
scattered from alkali /AI(100) as a probe of the local electro-
Woodruff, Coverage-dependent changes in the adsorption ge-
static potential 348 (1996) 359 ometry of benzene on Ni{111} 348 (1996) 89
Chlorine C.J. Jenks, S. Rishi and P.A. Thiel, Effectiveness of a fluorinated
nickel surface in catalyzing the decomposition of a perfluo-
W.K. Walter, D.E. Manolopoulos and R.G. Jones, Chlorine ad- ropolyether analog 348 (1996) 175
sorption and diffusion on Cu(111) 348 (1996) 115 M. Stichler, P. Zebisch, M. Weinelt and H.-P. Steinriick, Argon
desorption as a tool to study the growth of molecular layers
Copper
348 (1996) 370
W.K. Walter, D.E. Manolopoulos and R.G. Jones, Chlorine ad-
Noble gases
sorption and diffusion on Cu(111) 348 (1996) 115
W. Wulfhekel, N.N. Lipkin, J. Kliewer, G. Rosenfeld, L.C. M. Stichler, P. Zebisch, M. Weinelt and H.-P. Steinriick, Argon
Jorritsma, B. Poelsema and G. Comsa, Conventional and desorption as a tool to study the growth of molecular layers
manipulated growth of Cu/Cu(11 1) 348 (1996) 227 348 (1996) 370