Subsecond Annealing of Advanced Materials: Annealing by Lasers, Flash Lamps and Swift Heavy Ions

330 Pages·2014·11.17 MB·English

by  Matthias Voelskow

Springer Series in Materials Science
Volume 192
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RobertHull,Charlottesville,VA,USA
ChennupatiJagadish,Canberra,ACT,Australia
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JürgenParisi,Oldenburg,Germany
ZhimingM.Wang,Chengdu,P.R.China
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TheSpringerSeriesinMaterialsSciencecoversthecompletespectrumofmaterialsphysics,
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nizingtheincreasingimportanceofmaterialsscienceinfuturedevicetechnologies,thebook
titlesinthisseriesreflectthestate-of-the-artinunderstandingandcontrollingthestructure
andpropertiesofallimportantclassesofmaterials.
Wolfgang Skorupa (cid:2) Heidemarie Schmidt
Editors
Subsecond
Annealing
of Advanced
Materials
Annealing by Lasers, Flash Lamps
and Swift Heavy Ions
Editors
WolfgangSkorupa HeidemarieSchmidt
InstituteofIonBeamPhysicsandMaterials MaterialsystemederNanoelektronik
Research Nano-SpintronicsGroup
Helmholtz-ZentrumDresden-Rossendorf ChemnitzUniversityofTechnology
Dresden,Saxony,Germany Chemnitz,Saxony,Germany
ISSN0933-033X ISSN2196-2812(electronic)
SpringerSeriesinMaterialsScience
ISBN978-3-319-03130-9 ISBN978-3-319-03131-6(eBook)
DOI10.1007/978-3-319-03131-6
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Preface
Annealingofmaterialsisoneoftheoldesttechniquesusedbythemankindtopre-
parematerialsforthedailyandnondailylife.Ofcourse,thecookingoffoodisthe
most important and famous/beloved one. The processing of materials like metals
andtheiralloysdrovethistypeofworkovermillenniatomoreandmoresophisti-
cation.Oneofthemaindrivingforcesforthatinthesecondhalfofthe20thcentury
was the development of electronic materials technology for semiconductors, thin
films,etc.Allkindoffurnaceswerethemaintoolovercenturies.Itwasfinallythe
useoflightflashestosimulateandstudytheimpactofnuclearweaponexplosions
onthedegradationofsolidmaterialsinthe50sandtheinventionthelaserin1960
whichaffectedthedevelopmentofannealingtechniquesonmuchshortertimescales
thanbefore.Thesenewdevelopmentsstartedinthemid-70sintheleadingscientific
semiconductor laboratories and comprised energy sources like lasers, flash lamps,
halogenlamps,electronbeams,andevenflames.Thefirstindustrialtechnologyused
inthechipindustrywasRapidThermalAnnealing/Processing(RTA/RTP).Halogen
lamps were used to perform annealing processes in the range of several seconds
endingin2000withtheMoore’sLaw-drivenshrinkageofdevicedimensionsatone
secondasthelowertimelimitofthistechnology.Finally,flashlampannealingusing
Xenonfilledlampswithamaximumofthelightspectruminthebluerangeandlaser
annealingintheinfraredrangemadetheleapintoindustrialapplications.Thefirst
need to perform annealing in the range of only one millisecond was driven by the
factthattheborondiffusionofthesourceanddraindopingareasofthep-MOStran-
sistorsofmicroprocessorshadtobesuppressed.Thisismeanwhilestate-of-the-art
andmillisecond—orsubsecond—annealinghasarrivedinmanyotherareasofsci-
enceandtechnology.TherenownedIEEEConferenceseriesonAdvancedThermal
ProcessingofSemiconductorsendedin2010afterabout20yearsofsuccess,partly
because of growing competition pressure regarding industrial developments. It is
thecompetitionbetweendifferentcompanies,countries,evenculturesasamoreand
moregrowingissue.So,ourgoalwasfinallytojump—atleastonetimein2011—
intothisgapandtobringtogethernotonlychiptechnologistsbutalsopeoplefrom
other branches with interest in various aspects of Subsecond Thermal Processing
ofAdvancedMaterials(subtherm2011).Thisbookistheoutcomeofthesubtherm
v
vi Preface
2011meetingbyhavingaskedseveralcolleaguestopresenttheircontributions.The
contributions ranged from an historical excursus (Chap. 1) over selected contribu-
tions on fundamental and applied aspects of short time annealing to recent laser
equipmentdevelopments.Inthefollowingtabletheeditorshavetriedtocategorize
Chaps.2–15:
IV’s III–V’s Others
Si SiGe Ge Ga(As,P) (In,Ga)As SiO2:Ni Organics
Solidphase 3,8,10,12, 5 4 14
13,14
Liquidphase 2,8,10,13 2 15 11 6
Modeling 7,12 2 15
(Over)doping 3,13 4
Nanostructures 5 7 11 6
Lowcost 10,14 14
Magnetism 2 15 6
Superconductivity 4
Segregation 5 11
Devices 3,7,9,13, 14
14
Processing 8,9,12
WeexpressoursincerethankstotheSpringercompanyforhavinginvitedustopub-
lishthisuniquecollectionofcontributions.Andwegreatlyacknowledgethediligent
anddedicatedworkofallauthorsandhopefinallyforaninterestedreadership.
Dresden,Germany WolfgangSkorupa
Chemnitz,Germany HeidemarieSchmidt
Contents
1 HistoricalAspectsofSubsecondThermalProcessing . . . . . . . . 1
MatthiasVoelskow,RossenA.Yankov,andWolfgangSkorupa
1.1 TheVeryEarlyTime . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1.1 PulsedLaserAnnealingintheNanosecondRange . . . . 2
1.1.2 FlashLampHeatingintheMicrosecondtoMillisecond
Range . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1.1.3 IsothermalShortTimeAnnealingintheRangeofSeconds 3
1.2 AnnealingofIonImplantedSemiconductor
Layers—thePioneeringAction . . . . . . . . . . . . . . . . . . 4
1.2.1 RapidLiquidPhaseEpitaxy . . . . . . . . . . . . . . . . 4
1.2.2 RapidSolidPhaseEpitaxy/HighTemperatureShortTime
Annealing . . . . . . . . . . . . . . . . . . . . . . . . . 8
1.3 RecrystallisationofDepositedSemiconductorLayers . . . . . . 8
1.3.1 GrainSizeEnlargement . . . . . . . . . . . . . . . . . . 8
1.3.2 GeneralRulesfortheCrystallisationofa-SiLayers
onAmorphousSubstrates . . . . . . . . . . . . . . . . . 8
1.3.3 ExplosiveCrystallisationUsingLasersandFlashLamps . 9
1.3.4 DendriticGrainGrowthinThinSiliconLayers
onAmorphousSubstratesbyFlashLampIrradiation . . . 10
1.3.5 StripHeaterCrystallisation . . . . . . . . . . . . . . . . 11
1.4 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2 NanonetFormation by ConstitutionalSupercoolingof Pulsed
LaserAnnealed,Mn-ImplantedGermanium . . . . . . . . . . . . 15
DaniloBürger,ShengqiangZhou,MarcelHöwler,XinOu,
GyörgyJ.Kovacs,HelfriedReuther,ArndtMücklich,
WolfgangSkorupa,andHeidemarieSchmidt
2.1 FerromagnetisminDilutedGaAs:Mn . . . . . . . . . . . . . . . 16
2.2 FerromagnetisminGe:MnNanonets . . . . . . . . . . . . . . . 18
2.2.1 Fabrication . . . . . . . . . . . . . . . . . . . . . . . . . 18
vii
viii Contents
2.2.2 EtchingforFurtherInvestigations . . . . . . . . . . . . . 22
2.2.3 Results . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2.3 Outlook . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3 Metastable Activation of Dopants by Solid Phase Epitaxial
Recrystallisation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
R.Duffy
3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.1.1 OverviewofChapter. . . . . . . . . . . . . . . . . . . . 36
3.1.2 AmorphisationofaSiliconSubstrate . . . . . . . . . . . 36
3.1.3 RecrystallisationfromaTemplate . . . . . . . . . . . . . 37
3.2 MetastableAbove-EquilibriumSolubility . . . . . . . . . . . . . 38
3.3 ThermalStability . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.3.1 CrystalDefects. . . . . . . . . . . . . . . . . . . . . . . 41
3.3.2 DopantDeactivation . . . . . . . . . . . . . . . . . . . . 42
3.3.3 DopantRedistributionBefore/During/After
Recrystallisation . . . . . . . . . . . . . . . . . . . . . . 44
3.4 Solutions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
3.4.1 Co-implants . . . . . . . . . . . . . . . . . . . . . . . . 47
3.4.2 VacancyEngineering . . . . . . . . . . . . . . . . . . . 48
3.4.3 Low-TemperatureImplants . . . . . . . . . . . . . . . . 49
3.5 FutureTrends—EmergingMaterialsandDevices . . . . . . . . . 50
3.5.1 EmergingMaterials . . . . . . . . . . . . . . . . . . . . 50
3.5.2 EmergingDeviceArchitectures . . . . . . . . . . . . . . 50
3.5.3 EmergingDopingMethods . . . . . . . . . . . . . . . . 51
3.6 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
4 SuperconductingGalliumImplantedGermanium . . . . . . . . . . 57
J.FiedlerandV.Heera
4.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
4.2 SuperconductivityinSemiconductors . . . . . . . . . . . . . . . 59
4.3 GalliumImplantedGermanium . . . . . . . . . . . . . . . . . . 61
4.3.1 HighFluenceGaImplantation—TheAs-ImplantedState 61
4.3.2 MicrostructureAfterFlashLampAnnealing . . . . . . . 65
4.3.3 ElectricalPropertiesintheNormal-State . . . . . . . . . 67
4.3.4 SuperconductingState . . . . . . . . . . . . . . . . . . . 69
4.3.5 PropertiesofGa-RichInterfaces—SegregationVersus
Doping . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
4.4 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
5 Structural Changes in SiGe/Si Layers Induced by Fast
Crystallization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
P.I.GaidukandS.L.Prakopyeu
5.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Contents ix
5.2 SegregationinCz-GrownSiGe . . . . . . . . . . . . . . . . . . 80
5.3 FastCrystallizationofSiGeAlloyLayersandFormation
ofCellularStructures . . . . . . . . . . . . . . . . . . . . . . . 83
5.3.1 Laser-InducedSegregationofLowSolubleDopants
inSilicon . . . . . . . . . . . . . . . . . . . . . . . . . . 83
5.3.2 FastSegregationinEpitaxialSi1−xGex Layers . . . . . . 85
5.3.3 Laser-InducedMeltingofCVDDeposited
PolycrystallineGe . . . . . . . . . . . . . . . . . . . . . 91
5.4 PulsedLaserModificationofGeandGeSnNanodots . . . . . . 92
5.4.1 LiquidShellNucleationModel . . . . . . . . . . . . . . 96
5.4.2 LiquidNucleationandGrowthModel . . . . . . . . . . . 97
5.5 SiGeAlloyDecompositionintheTracksofSwiftHeavyIons . . 97
5.6 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
6 Sub-nanosecondThermalSpikeInducedNanostructuringofThin
SolidFilmsUnderSwiftHeavyIon(SHI)Irradiation . . . . . . . . 107
S.Ghosh,H.Kumar,S.P.Singh,P.Srivastava,D.Kabiraj,
D.K.Avasthi,D.Bürger,S.Zhou,A.Mücklich,H.Schmidt,and
J.P.Stouquert
6.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
6.1.1 SHI-MatterInteractionandThermalSpike . . . . . . . . 108
6.1.2 BriefObjectives . . . . . . . . . . . . . . . . . . . . . . 110
6.2 ElongationofMetalNanoparticlesEmbeddedinThinSilica
Matrix[9] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
6.2.1 MaterialsImportance . . . . . . . . . . . . . . . . . . . 110
6.2.2 SimulationforNiNPsEmbeddedinSilicaMatrix . . . . 111
6.2.3 SynthesisofNiNPsEmbeddedinSilicaMatrix
andIonIrradiationExperiments . . . . . . . . . . . . . . 112
6.3 EvolutionofSi-NanostructuresonSiliconRichSiliconNitride
(SRSN)Matrix[22] . . . . . . . . . . . . . . . . . . . . . . . . 116
6.3.1 MaterialsImportance . . . . . . . . . . . . . . . . . . . 116
6.3.2 DissolutionandRe-precipitationofSiNanostructures
inSRSNMatrix . . . . . . . . . . . . . . . . . . . . . . 116
6.3.3 ExplanationBasedonThermalSpikeModel . . . . . . . 117
6.4 Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
7 Pulsed-Laser-Induced Epitaxial Growth of Silicon for Three-
DimensionalIntegratedCircuits . . . . . . . . . . . . . . . . . . . 123
RyoichiIshihara,M.R.TajariMofrad,MingHe,andC.I.M.Beenakker
7.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
7.2 Simulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
7.2.1 Thermal(Enthalpy)Model . . . . . . . . . . . . . . . . 125
7.2.2 Phase-FieldModel . . . . . . . . . . . . . . . . . . . . . 127
7.3 Experimental . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128