Spin Physics in Semiconductors

447 Pages·2008·7.59 MB·English

by  M. I. Dyakonov (auth.), Professor Michel I. Dyakonov (eds.)

SpringerSeriesin
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SOLID STATE SCIENCES
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Volumes100–146arelistedattheendofthebook.
M.I. Dyakonov
(Ed.)
Spin Physics
in Semiconductors
With176Figures
ProfessorMichelI.Dyakonov
LaboratoiredePhysiqueThéoriqueetAstroparticules
cc070UniversitéMontpellierII,34095Montpellier,France
E-mail:[email protected]
SeriesEditors:
ProfessorDr.,Dres.h.c.ManuelCardona
∗
ProfessorDr.,Dres.h.c.PeterFulde
ProfessorDr.,Dres.h.c.KlausvonKlitzing
ProfessorDr.,Dres.h.c.Hans-JoachimQueisser
Max-Planck-InstitutfürFestkörperforschung,Heisenbergstrasse1,70569Stuttgart,Germany
∗
Max-Planck-InstitutfürPhysikkomplexerSysteme,NöthnitzerStrasse38
01187Dresden,Germany
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DepartmentofPhysics,UniversityofMichigan
450ChurchStreet,AnnArbor,MI48109-1040,USA
ProfessorDr.HorstStörmer
Dept.Phys.andDept.Appl.Physics,ColumbiaUniversity,NewYork,NY10027and
BellLabs.,LucentTechnologies,MurrayHill,NJ07974,USA
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TothememoryofVladimirIdelevichPerel(1928–2007)
Preface
The purpose of this collective book is to present a non-exhaustive survey of spin-
relatedphenomenainsemiconductorswithafocusonrecentresearch.Insomesense
itmayberegardedasanupdatedversionoftheOpticalOrientationbook,whichwas
entirelydevotedtospinphysicsinbulksemiconductors.
During the 24 years that have elapsed, we have witnessed, on the one hand, an
extraordinary development in the wonderful semiconductor physics in two dimen-
sionswiththeaccompanyingrevolutionaryapplications.Ontheotherhand,during
the last maybe 15 years there was a strong revival in the interest in spin phenom-
ena,in particularin low-dimensionalsemiconductorstructures. While in the1970s
and1980stheentireworldpopulationofresearchersinthefieldneverexceeded20
persons,nowit canbecountedbythehundredsandthenumberof publicationsby
the thousands. This explosive growth is stimulated, to a large extent, by the hopes
thattheelectronand/ornuclearspinsinasemiconductorwillhelptoaccomplishthe
dreamoffactorizinglargenumbersbyquantumcomputingandeventuallytodevelop
a new spin-based electronics, or “spintronics”. Whether any of this will happen or
not, still remains to be seen. Anyway, these ideas have resulted in a large body of
interestingandexcitingresearch,whichisagoodthingbyitself.
Thefieldofspinphysicsinsemiconductorsisextremelyrichandinterestingwith
manyspectaculareffectsinopticsandtransport.Webelievethatarepresentativepart
ofthemisreviewedinthisbook.Wehavetriedtomakethepresentationaccessible
tograduatestudentsandtoresearchersnewtothefield.
Montpellier, MichelDyakonov
May2008
Contents
Preface............................................................ vii
ListofContributors ................................................ xvii
1 BasicsofSemiconductorandSpinPhysics .......................... 1
M.I.Dyakonov.................................................... 1
1.1 HistoricalBackground........................................... 1
1.2 SpinInteractions ............................................... 2
1.2.1 ThePauliPrinciple ....................................... 2
1.2.2 ExchangeInteraction ..................................... 3
1.2.3 Spin–OrbitInteraction .................................... 3
1.2.4 HyperfineInteractionwithNuclearSpins .................... 4
1.2.5 MagneticInteraction...................................... 5
1.3 BasicsofSemiconductorPhysics.................................. 5
1.3.1 ElectronEnergySpectruminaCrystal....................... 5
1.3.2 EffectiveMassesofElectronsandHoles ..................... 5
1.3.3 TheEffectiveMassApproximation ......................... 6
1.3.4 RoleofImpurities........................................ 7
1.3.5 Excitons................................................ 8
1.3.6 TheStructureoftheValenceBand.LightandHeavyHoles ..... 8
1.3.7 BandStructureofGaAs................................... 11
1.3.8 Photo-generationofCarriersandLuminescence............... 11
1.3.9 AngularMomentumConservationinOpticalTransitions ....... 12
1.3.10 LowDimensionalSemiconductorStructures.................. 13
1.4 OverviewofSpinPhysicsinSemiconductors ....................... 15
1.4.1 OpticalSpinOrientationandDetection ...................... 15
1.4.2 SpinRelaxation.......................................... 16
1.4.3 HanleEffect............................................. 21
1.4.4 MutualTransformationsofSpinandChargeCurrents .......... 22
1.4.5 InteractionbetweentheElectronandNuclearSpinSystems..... 23
1.5 OverviewoftheBookContent.................................... 25
References .................................................... 26
x Contents
2 SpinDynamicsofFreeCarriersinQuantumWells................... 29
R.T.Harley ...................................................... 29
2.1 Introduction ................................................... 29
2.2 OpticalMeasurementsofSpinDynamics........................... 29
2.3 MechanismsofSpinRelaxationofFreeElectrons.................... 32
2.4 ElectronSpinRelaxationinBulkSemiconductors ................... 35
2.5 ElectronSpinRelaxationin[001]-OrientedQuantumWells ........... 37
2.5.1 Symmetrical[001]-OrientedQuantumWells.................. 37
2.5.2 StructuralInversionAsymmetryin[001]-OrientedQuantum
Wells................................................... 40
2.5.3 NaturalInterfaceAsymmetryinQuantumWells .............. 42
2.5.4 OscillatorySpin-DynamicsinTwo-dimensionalElectron
Gases .................................................. 45
2.6 SpinDynamicsofFreeHolesinBulkMaterialandQuantumWells..... 47
2.7 EngineeringandControllingtheSpinDynamicsinQuantumWells ..... 49
2.8 Conclusions ................................................... 51
References .................................................... 52
3 ExcitonSpinDynamicsinSemiconductorQuantumWells ............ 55
T.AmandandX.Marie............................................. 55
3.1 Two-dimensionalExcitonFineStructure ........................... 55
3.1.1 Short-RangeElectron–HoleExchange....................... 56
3.1.2 Long-RangeElectron–HoleExchange ....................... 57
3.2 OpticalOrientationofExcitonSpininQuantumWells................ 58
3.3 ExcitonSpinDynamicsinQuantumWells.......................... 60
3.3.1 ExcitonFormationinQuantumWells ....................... 60
3.3.2 SpinRelaxationofExciton-BoundHole ..................... 62
3.3.3 SpinRelaxationofExciton-BoundElectron .................. 65
3.3.4 ExcitonSpinRelaxationMechanism ........................ 66
3.4 ExcitonExchangeEnergyandg-FactorinQuantumWells ............ 72
3.4.1 ExchangeInteractionofExcitonsandg-FactorMeasuredwith
cwMagneto-PhotoluminescenceSpectroscopy................ 73
3.4.2 ExcitonSpinQuantumBeatsSpectroscopy................... 76
3.5 ExcitonSpinDynamicsinTypeIIQuantumWells ................... 81
3.6 SpinDynamicsinDenseExcitonicSystems......................... 83
References .................................................... 86
4 ExcitonSpinDynamicsinSemiconductorQuantumDots ............. 91
X.Marie,B.Urbaszek,O.KrebsandT.Amand.......................... 91
4.1 Introduction ................................................... 91
4.2 Electron–HoleComplexesinQuantumDots ........................ 92
4.2.1 CoulombCorrectionstotheSingleParticlePicture ............ 93
4.2.2 FineStructureofNeutralExcitons .......................... 93
4.3 ExcitonSpinDynamicsinNeutralQuantumDotswithoutApplied
MagneticFields ................................................ 95
Contents xi
4.3.1 ExcitonSpinDynamicsunderResonantExcitation ............ 95
4.3.2 ExcitonSpinQuantumBeats:TheRoleofAnisotropic
Exchange ............................................... 97
4.4 ExcitonSpinDynamicsinNeutralQuantumDotsinExternalMagnetic
Fields......................................................... 98
4.4.1 ZeemanEffectVersusAnisotropicExchangeSplittingsinSingle
DotSpectroscopy ........................................ 98
4.4.2 ExcitonSpinQuantumBeatsinAppliedMagneticFields....... 100
4.5 ChargedExcitonComplexes:SpinDynamicswithoutAppliedMagnetic
Fields......................................................... 101
4.5.1 FormationofTrions:DopedandChargeTuneableStructures.... 102
4.5.2 FineStructureandPolarizationofX+andX−Excitons ........ 103
4.5.3 SpinDynamicsinNegativelyChargedExciton
ComplexesXn− ......................................... 104
4.5.4 SpinMemoryofTrappedElectrons ......................... 106
4.6 ChargedExcitonComplexes:SpinDynamicsinAppliedMagnetic
Fields......................................................... 106
4.6.1 ElectronSpinPolarizationinPositivelyChargedExcitonsin
LongitudinalMagneticFields .............................. 107
4.6.2 ElectronSpinCoherenceinPositivelyChargedExcitonsin
TransverseMagneticFields................................ 109
4.7 Conclusions ................................................... 110
References .................................................... 110
5 Time-ResolvedSpinDynamicsandSpinNoiseSpectroscopy .......... 115
J.HübnerandM.Oestreich ......................................... 115
5.1 Introduction ................................................... 115
5.2 Time-andPolarization-ResolvedPhotoluminescence................. 116
5.2.1 ExperimentalTechnique................................... 117
5.2.2 ExperimentalExampleI:SpinRelaxationin(110)Oriented
QuantumWells .......................................... 119
5.2.3 Experimental Example II: Coherent Dynamics of Coupled
ElectronandHoleSpinsinSemiconductors .................. 122
5.2.4 PhotoluminescenceandSpin-OptoelectronicDevices .......... 123
5.3 Time-ResolvedFaraday/KerrRotation ............................. 123
5.3.1 ExperimentalSet-Up ..................................... 125
5.3.2 ExperimentalExample:SpinAmplification................... 127
5.4 SpinNoiseSpectroscopy ........................................ 129
5.4.1 ExperimentalRealization.................................. 129
5.5 SpinNoiseMeasurementsinn-GaAs .............................. 131
5.6 Conclusions ................................................... 132
References .................................................... 133
xii Contents
6 CoherentSpinDynamicsofCarriers ............................... 135
D.R.YakovlevandM.Bayer......................................... 135
6.1 Introduction ................................................... 135
6.1.1 SpinCoherenceandSpinDephasingTimes .................. 136
6.1.2 OpticalGenerationofSpinCoherentCarriers................. 137
6.1.3 ExperimentalTechnique................................... 138
6.2 SpinCoherenceinQuantumWells ................................ 140
6.2.1 ElectronSpinCoherence .................................. 141
6.2.2 HoleSpinCoherence ..................................... 151
6.3 SpinCoherenceinSinglyChargedQuantumDots ................... 153
6.3.1 ExcitonandElectronSpinBeatsProbedbyFaradayRotation ... 155
6.3.2 GenerationofElectronSpinCoherence...................... 157
6.3.3 ModeLockingofSpinCoherenceinanEnsembleofQuantum
Dots ................................................... 160
6.3.4 NucleiInducedFrequencyFocusingofSpinCoherence ........ 169
6.4 Conclusions ................................................... 174
References .................................................... 175
7 SpinPropertiesofConfinedElectronsinSi.......................... 179
W.JantschandZ.Wilamowski ....................................... 179
7.1 Introduction ................................................... 179
7.2 Spin–OrbitEffectsinSiQuantumWells............................ 182
7.2.1 TheBychkov–RashbaField................................ 182
7.3 SpinRelaxationofConductionElectronsinSi/SiGeQuantumWells .... 186
7.3.1 MechanismsofSpinRelaxationofConductionElectrons ....... 186
7.3.2 Linewidth and the Longitudinal Relaxation Time of the
Two-dimensionalElectronGasinSi/SiGe.................... 187
7.3.3 DephasingandLongitudinalSpinRelaxation ................. 191
7.3.4 ComparisonwithExperiment .............................. 194
7.4 CurrentInducedSpin–OrbitField ................................. 195
7.5 ESRExcitedbyanacCurrent .................................... 197
7.5.1 ElectricDipolevs.MagneticDipoleSpinExcitation ........... 197
7.5.2 The ESR Signal Strength in Two-dimensional Si/SiGe
Structures—ExperimentalResults .......................... 198
7.5.3 ModelingtheCurrentInducedExcitationandDetection
ofESR ................................................. 199
7.5.4 PowerAbsorption,LineShape ............................. 201
7.6 SpinRelaxationunderLateralConfinement......................... 201
7.6.1 ShallowDonors.......................................... 202
7.6.2 FromtheTwo-dimensionalElectronGastoQuantumDots...... 204
7.6.3 SpinRelaxationandDephasinginSiQuantumDots ........... 205
7.7 Conclusions ................................................... 206
References .................................................... 207