Springer Series in MATERIALS SCIENCE 51 Springer-Verlag Berlin Heidelberg GmbH ONLINE LIBRARY Physics and Astronomy http://www.springer.de/phys/ Springer Series in MATERIALS SCIENCE Editors: R. Hull R. M. Osgood, Jr. J. Parisi The Springer Series in Materials Science covers the complete spectrum of materials physics, including fundamental principles, physical properties, materials theory and design. Recognizing the increasing importance of materials science in future device technologies, the book titles in this series reflect the state-of-the-art in understanding and controlling the structure and properties of all important classes of materials. 51 Point Defects 56 Si02 in Si Microdevices in Semiconductors ByM.Itsumi and Insulators Determination of Atomic 57 Radiation Effects in Advanced Semiconductor Materials and Electronic Structure and Devices from Paramagnetic Hyperfine By C. Claeys and E. Simoen Interactions By J.-M. Spaeth and H. Overhof 58 Functional Thin Films and Functional Materials 52 Polymer Films New Concepts and Technologies with Embedded Metal Nanoparticles Editor: D. Shi By A. Heilmann 53 Nanocrystalline Ceramics 59 Dielectric Properties of Porous Media By S.O. Gladkov Synthesis and Structure By M. Winterer 60 Organic Photovoltaics Concepts and Realization 54 Electronic Structure and Magnetism Editors: C. Brabec, V. Dyakonov, J. Parisi of Complex Materials and N. Sariciftci Editors: D.J. Singh and A. Dimitrios 55 Quasicrystals An Introduction to Structure, Physical Properties and Applications Editors: J.-B. Suck, M. Schreiber, and P. Haussler Series homepage - http://www.springer.de/phys/books/ssms/ Volumes 1-50 are listed at the end of the book. J.-M. Spaeth H.Overhof Point Defects in Semiconductors and Insulators Determination of Atomic and Electronic Structure from Paramagnetic Hyperfine Interactions With 279 Figures , Springer Professor Dr. Johann-Martin Spaeth Professor Dr. Harald Overhof Fachbereich Physik Universităt Paderborn Warburger StraBe 100 33095 Paderborn Germany e-mail: [email protected] [email protected] Series Editors: Professor R. M. Osgood, Jr. Microelectronics Science Laboratory, Department of Electrical Engineering Columbia University, Seeley W. Mudd Building, New York, NY 10027, USA Professor Robert Huli University of Virginia, Dept. ofMaterials Science and Engineering, Thornton HalI Charlottesville, VA 22903-2442, USA Professor Jiirgen Parisi Universităt Oldenburg, Fachbereich Physik, Abt. Energie-und Halbleiterforschung Carl-von-Ossietzky-Strasse 9-11, 26129 Oldenburg, Germany Guest Editors: Professor Hans-Joachim Queisser Max-Planck-Institut fiir Festkorperforschung, Abt. Experimentelle Physik Heisenbergstrasse 1, 70569 Stuttgart, Germany ISSN 0933-033x ISBN 978-3-642-62722-4 ISBN 978-3-642-55615-9 (eBook) DOI 10.1007/978-3-642-55615-9 Ubrary of Congress Cataloging-in-Publication Data applied for. A catalog record for this book is available from the Ubrary of Congress. Bibliographic information published by Die Deutsche Bibliothek Die Deutsche Bibliothek lists this publication in the Deutsche Nationalbibliografie; detailed bibliographic data is available in the Internet at http://dnb.ddb.de This work is subject to copyright. Ali rights are reserved, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilm or in any other way, and storage in data banks. Duplication of this publication or parts thereof is permitted only under the provisions of the German Copyright Law of September 9, 1965, in its current version, and permission for use must always be obtained from Springer-Verlag. Violations are liable for prosecution under the German Copyright Law. http://www.springer.de © Springer-Verlag Berlin Heidelberg 2003 Originally published by Springer-Verlag Berlin Heidelberg New York in 2003 Softcover reprint of the hardcover lst edition 2003 The use of general descriptive names, registered names, trademarks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. Typesetting: Camera-ready copy produced by the authors using a Springer TeX macro package Cover concept: eStudio Calamar Steinen Cover production: design & production GmbH, Heidelberg Printed on acid-free paper SPIN: 10658601 57/3141/tr 543210 Preface The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available. In ENDOR spectroscopy the most difficult task is the analysis of ENDOR spectra which may contain several hundred lines. The chapter on the analysis of ENDOR spectra was com pletely rewritten with the aim to provide a few simple tools how to start and complete an ENDOR analysis. A completely new chapter is included on the so-called electrical detection of EPR (EDEPR) and ENDOR (EDENDOR) in which the paramagnetic and nuclear magnetic resonances are detected via the electrical conductivity. Although EDEPR has been observed already in the late sixties, the mechanisms have been better understood only in recent years. EDEPR/ENDOR spectroscopy has proved to be as sensitive as optical detection via luminescence and is particularly useful for small semiconduc tor volumes such as thin epitaxial layers or microelectronic devices and for very low defect concentrations. Also the chapter on the theoretical interpre- VI Preface tation of the measured hyperfine (hf) interactions is completely new. When the precedent book appeared in 1992, the vast majority of theoretical pa pers on hf interactions of point defects in solids dealt with point defects in ionic crystals, mainly color centers, although many experimental data were already available for defects in semiconductors and the emphasis had already shifted to semiconductors. The theoretical methods used for the description of point defects in ionic crystals are hardly useful for deep defects in semi conductors. These are described by the local densitiy approximations (LDA) to the Density Functional Theory (DFT) ,which had been applied to deep defects in semiconductors already in the eighties. The theoretical work using DFT-based methods, however, concentrated at that time on total energies for semiconductor defects and on quantities that could be derived from total en ergies like lattice relaxations and defect reactions. With very few exceptions, the hf interaction problem had not been tackled. This is why in the precedent book the general theory was presented with applications predominantly to defects in ionic crystals. In the meantime the DFT-based methods have been extended to treat hf interactions. For many deep defects the results have been shown to be quite reliable when compared with experimental data. The DFT-based methods proved to be flexible with successful applications ranging from defects in homopolar crystals like diamond and silicon to defects in 111-V compound semiconductors and the more ionic II-VI semiconductors as well as to color centers in ionic crystals. The theory chapter of this book discusses therefore the DFT methods and how from this theory the hf interactions can be derived, which is illustrated with several examples. Finally the chapter on the technical aspects of the optical detection of EPR and ENDOR is retained from the precedent book and extended to high frequency jhigh field while that on the technical aspects of ENDOR spectrometers, which are commercially available, is omitted. We would like to express our appreciation to Dr. S. Greulich-Weber and to Dr. S. Schweizer for many fruitful discussions and for their technical assis tance with some of the figures and also with the text. We are also indebted to Dr. U. Gerstmann for many suggestions, for his help with the calculations, and for a critical reading of the manuscript. Paderborn, J. -M. Spaeth September 2002 H.Overhof Contents 1. Introduction.............................................. 1 1.1 Structure of Point Defects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.2 Basic Concepts of Defect Structure Determination by EPR .. 4 1.3 Superhyperfine and Electronic Structures of Defects in Solids 9 2. Fundamentals of Electron Paramagnetic Resonance. . . . . .. 11 2.1 Magnetic Properties of Electrons and Nuclei. . . . . . . . . . . . . .. 11 2.2 Electrons and Nuclei in an External Magnetic Field. . . . . . . .. 13 2.3 Some Useful Relations for Angular Momentum Operators. . .. 15 2.4 Time Dependence of Angular Momentum Operators and Macroscopic Magnetization . . . . . . . . . . . . . . . . . . . . . . . . .. 15 2.5 Basic Magnetic Resonance Experiment . . . . . . . . . . . . . . . . . . .. 17 2.6 Spin-Lattice Relaxation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 20 2.7 Rate Equations for a Two-Level System. . . . . . . . . . . . . . . . . .. 22 2.8 Bloch Equations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 26 2.9 Conventional Detection of Electron Paramagnetic Resonance and its Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 31 3. Electron Paramagnetic Resonance Spectra. . . . . . . . . . . . . . .. 35 3.1 Spin Hamiltonian. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 35 3.2 Electron Zeeman Interaction. . . . . . . . . . . . . . . . . . . . . . . . . . . .. 38 3.3 g-Factor Splitting of EPR Spectra. . . . . . . . . . . . . . . . . . . . . . .. 42 3.4 Fine-Structure Splitting of EPR Spectra. . . . . . . . . . . . . . . . . .. 46 3.5 Hyperfine Splitting of EPR Spectra. . . . . . . . . . . . . . . . . . . . . .. 53 3.6 Superhyperfine Splitting of EPR Spectra . . . . . . . . . . . . . . . . .. 61 3.7 Inhomogeneous Line Widths of EPR Lines. . . . . . . . . . . . . . . .. 70 4. Optical Detection of Electron Paramagnetic Resonance . .. 75 4.1 Optical Transitions of Defects in Solids. . . . . . . . . . . . . . . . . . .. 76 4.2 Spectral Form of Optical Transitions of Defects in Solids .... 78 4.3 EPR Detected with Magnetic Circular Dichroism of Absorption Method. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 84 4.4 MCDA Excitation Spectra of ODEPR Lines (MCDA "Tagged" by EPR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 93 VIII Contents 4.5 Spatially Resolved MCDA and ODEPR Spectra. . . . . . . . . . .. 99 4.6 Measurement of Spin-Lattice Relaxation Time Tl with MCDA Method .................................... 101 4.7 Determination of Spin State with MCDA Method .......... 103 4.8 EPR of Ground and Excited States Detected with Optical Pumping .................................. 109 4.9 EPR Optically Detected in Donor-Acceptor Pair Recombination Luminescence ....... 118 4.10 Optically Detected EPR of Triplet States .................. 125 4.11 ODEPR of Trapped Excitons with MCDA Method .................................... 129 4.12 Sensitivity of ODEPR Measurements ..................... 131 4.13 Structural Information from Forbidden Transitions in MCDA-EPR Spectra ................................. 134 4.14 Spatial Correlation Between Defects by Cross-Relaxation-Spectroscopy ........................ 144 4.15 High-Field ODEPR/ODENDOR ......................... 156 5. Electron Nuclear Double Resonance ...................... 163 5.1 The Resolution Problem, a Simple Model .................. 163 5.2 Type of Information from EPR and NMR Spectra .......... 165 5.3 Indirect Detection of NMR, Double Resonance ............. 167 5.4 Examples of ENDOR Spectra ............................ 174 5.5 Relations Between EPR and ENDOR Spectra, ENDOR-Induced EPR .................................. 176 5.6 Electron Nuclear Nuclear Triple Resonance (Double ENDOR) 183 5.7 Temperature Dependence and Photo-Excitation of ENDOR Spectra ..................................... 186 5.7.1 Temperature Dependence of ENDOR Spectra ........ 186 5.7.2 Photo-Excitation of ENDOR Spectra ............... 188 5.8 Stochastic ENDOR ..................................... 190 6. Analysis of END OR Spectra .. ................ , ........... 197 6.1 Qualitative Analysis of ENDOR Spectra ................... 198 6.1.1 Spin Hamiltonian ................................. 198 6.1.2 Simple First Order Solution ....................... 199 6.1.3 Assignment of Nuclei ............................. 201 6.1.4 Angular Dependence of ENDOR Lines .............. 204 6.1.5 Symmetry Considerations, Neighbor Shells .......... 209 6.2 Quantitative Analysis of ENDOR Spectra ................. 212 6.2.1 Higher Order Approximations ...................... 212 6.2.2 Large Anisotropic Hyperfine Interactions ............ 213 6.2.3 Approximation with the Effective Electron Spin Seff .. 223 6.2.4 Second Order Splittings of the Superhyperfine Structure .................... 226 Contents IX 6.2.5 Sample Alignment ................................ 237 6.2.6 Reconstruction of the EPR Line Shape from ENDOR Data ............................... 243 6.2.7 Asymmetric Superhyperfine Tensors ................ 247 6.2.8 Selection Rules and ENDOR Line Intensities ......... 250 6.2.9 ENDOR Spectra in the Case of a Large Quadrupole Interaction and Axial Symmetry ................... 253 6.2.10 Powder ENDOR Spectra .......................... 259 6.2.11 Final Results Obtainable from the Analysis of ENDOR Spectra ............................... 261 7. Electrical Detection of Electron Paramagnetic Resonance. . . . . . . . . . . . . . . . . . . . . . 265 7.1 Experimental Methods to Detect EDEPR ................. 266 7.2 Experimental Observation of EDEPR ..................... 269 7.3 The Donor-Acceptor Pair Recombination Model ............ 282 7.4 On the Role of the Electron Irradiation for the Donor EPR in Silicon ............................ 286 7.5 Spatial Resolution and Low Frequency EDEPR ............ 289 7.6 Electrical Detection of ENDOR .......................... 293 7.7 Concentration and Temperature Dependence of the EDEPR Signals .................................. 295 7.8 Further Spin-Dependent Recombination Models ............ 304 7.8.1 The Lepine Model ................................ 304 7.8.2 The Model of Kaplan, Solomon and Matt ........... 305 7.8.3 The Spin-Dependent SRH Model ................... 306 8. Theoretical ab initio Calculations of Hyperfine Interactions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 309 8.1 Electron States in Solids ................................ 310 8.1.1 Born-Oppenheimer Approximation ................ 311 8.1.2 Hartree and Harlree-Fock Approximations .......... 312 8.1.3 Density Functional Theory and Local Density Approximation .................. 314 8.1.4 Computational Methods for Energy Band Calculations ...................... 320 8.2 Computational Methods for Deep Point Defects ............ 324 8.2.1 Cluster Methods ................................. 325 8.2.2 The Supercell Method ............................ 325 8.2.3 Green's Function Methods ......................... 328 8.2.4 The Band Gap Problem and the Scissor Operator . . . . 332 8.3 Hyperfine Interactions .................................. 334 8.3.1 Non-relativistic Hyperfine Interactions .............. 335 8.3.2 Scalar Relativistic Hyperfine Interactions ............ 336 8.3.3 Magnetization Density for Many-Electron States ..... 338 X Contents 8.3.4 The Jahn-Teller Effect ............................ 341 8.3.5 The Core Polarization ............................ 343 8.3.6 Electrical Quadrupole Interaction .................. 347 8.3.7 The Empirical LCAO Scheme ...................... 349 8.3.8 The Envelope Function Method .................... 351 8.3.9 Point Dipole-Dipole Interaction .................... 352 8.4 Deep Point Defects in Semiconductors and Insulators ......................... 353 8.4.1 Substitutional Donors with Llz = 1 ................. 354 8.4.2 Substitutional Donors with Llz = 2 ................. 355 8.4.3 Interstitial Deep. Donors .......................... 363 8.4.4 Shallow Acceptors with Llz = -1 ................... 367 8.4.5 Deep Acceptors with Llz = -2 ..................... 368 8.4.6 Vacancies ....................................... 370 8.4.7 Point Defects in Ionic Solids ....................... 377 8.4.8 3d Transition Metal Defects ....................... 384 8.4.9 Interstitial 3d TM Defects ......................... 393 8.5 Shallow Defects: The Effective Mass Approximation and Beyond ............ 399 8.5.1 The EMA Formalism ............................. 400 8.5.2 Simplest Case: Nondegenerate Band Edge ........... 401 8.5.3 Conduction Band with Several Equivalent Minima .... 405 8.5.4 Pseudopotential Calculations ...................... 407 8.5.5 Degenerate Valence Bands ......................... 411 8.6 Conclusions ............................................ 411 9. Experimental Aspects of Optically Detected EPR and ENDOR .................. 415 9.1 Sensitivity Considerations ............................... 415 9.1.1 Magnetic Circular Dichroism of Absorption .......... 416 9.1.2 Optically Detected EPR ........................... 417 9.2 ODMR Spectrometers Monitoring Light Emission .......... 418 9.3 ODMR Spectrometers Monitoring Magnetic Circular Properties of Absorption and Emission .................... 420 9.3.1 General Description of the Spectrometer ............ 420 9.3.2 Measurement of Magnetic Circular Dichroism of Absorption .................................... 422 9.3.3 Measurement of Magnetic Circular Polarization of Emission. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 425 9.4 Experimental Details of the Components of an MCDA/MCPE ODMR Spectrometer ................................... 426 9.4.1 Light Sources .................................... 426 9.4.2 Monochromators ................................. 427 9.4.3 Imaging Systems ................................. 427 9.4.4 Linear Polarizers ................................. 427