Table Of Content

joverncor CRYSTAL GROWTH Journal of Crystal Growth 163 (1995) 478-481 Author index Akao, M., see Ito 163 (19963)1 1 Chen, C.T., see Hu 163 (1996) 266 Akasaki, I. and H. Amano, Crystal growth of Chen, X.Q., see Li 163 (1996) 348 column-IIl nitride semiconductors and their Cheng, H., see Li 163 (1996) 339 electrical and optical properties 163 (1996) 86 Cherkashina, N.V., see Volkov 163 (1996) 377 Albrecht, J.H. Werner annd M., see Kihnle 163 (19964)7 0 Christoffersen, J., M.R. Christoffersen and T. Alvarez, J.C., see Harada 163 (1996) 31 Johansen, Kinetics of growth and dissolu- Amano, H., see Akasaki 163 (1996) 86 tion of fluorapatite 163 (1996) 295 Anderson, D.M., M.G. Worster and S.H. Davis, Christoffersen, J., M.R. Christoffersen and T. The case for a dynamic contact angle in Johansen, Some new aspects of surface nu- containerless solidification 163 (1996) 329 cleation applied to the growth and dissolu- Anselmo, A., J. Koziol and V. Prasad, Full-scale tion of fluorapatite and hydroxyapatite 163 (1996) 304 experiments on solid-pellets feed continu- Christoffersen, M.R., see Christoffersen 163 (1996) 295 ous Czochralski growth of silicon crystals 163 (1996) 359 Christoffersen, M.R., see Christoffersen 163 (1996) 304 Aoki, H., see Ito 163 (19963)1 1 Chu, J.H., see Li 163 (1996) 348 Arias, J.M., see Gonzdlez-Mufioz 163 (1996) 434 Chui, H.C., see Biefeld 163 (19962)1 2 Arima, Y., see Irisawa 163 (1996) 22 Chung, Hyung-Tae, Seung-Cheol Lee and Aspnes, D.E., see Kamiya 163 (1996) 67 Jong-Kyu Yoon, Numerical prediction of operational parameters in Czochralski Bach, H., see Brinkmann 163 (1996) 369 growth of large-scale Si 163 (1996) 249 Balakrishna, V., see Singh 163 (1996) 398 Chuvilin, A.L., see Volkov 163 (1996) 377 Banhart, F., see Zwanger 163 (1996) 445 Cui, Q., see Li 163 (1996) 339 Barata, P.A. and M.L. Serrano, Salting-out pre- Cui, S.F., see Li 163 (1996) 339 cipitation of potassium dihydrogen phosphate (KDP). II. Influence of agitation in- Dao Thi, M.H., see Lisgarten 163 (1996) 474 tensity 163 (1996) 426 Dash, J.G., see Ishizaki 163 (1996) 455 Beatty, K.M., see Jackson 163 (1996) 461 Davis, R.F., S. Tanaka and R.C. Ker, Micro- Ben Omar, N., see Gonzalez-Muiioz 163 (1996) 434 structural evolution and defect formation Bergmann, R., see Kiihnle 163 (1996) 470 during the initial stages of the growth of Biefeld, R.M., H.C. Chui, B.E. Hammons, W.G. silicon carbide and aluminum nitride on Breiland, T.M. Brennan, E.D. Jones, M.H. a(6H)-SiC(0001) substrates 163 (1996) 93 Kim, P. Grodzinski, K.H. Chang and H.C. Davis, S.H., see Anderson 163 (1996) 329 Lee, High purity GaAs and AlGaAs grown Dong, C., see Li 163 (1996) 339 using tertiarybutylarsine, trimethylalumium, Dong, H.K., see Tu 163 (1996) 187 and trimethylgallium 163 (19962)1 2 Bongers, M.M.G., see Li 163 (19961)9 5 Eguchi, M., see Kakimoto 163 (1996) 238 Breiland, W.G., see Biefeld 163 (19962)1 2 Brennan, S., see Kisker 163 (1996) 54 Brennan, S., see Kamiya 163 (1996) 67 Feng, Q., see Yanagisawa 163 (1996) 285 Brennan, T.M., see Biefeld 163 (19962)1 2 Ferelius, N., see Singh 163 (1996) 398 Brinkmann, M., T. Rex, H. Bach and K. West- Fukuda, T., see Shimamura 163 (1996) 388 erholt, Crystal growth of high-7,. supercon- Fukuda, T., see Kimura 163 (1996) 393 ductors Pr,_ ,Ce,CuO,,, with substitu- Fuoss, P.H., see Kisker 163 (1996) 54 tions of Ni and Co for Cu 163 (1996) 369 Fuoss, P.H., see Kamiya 163 (1996) 67 Furukawa, Y., see Ishizaki 163 (1996) 455 Cao, J.Y., see Li 163 (1996) 348 Chang, K.H., see Biefeld 163 (1996) 212 Gallagher, H.G., see Wang 163 (1996) 272 joverncor CRYSTAL GROWTH Journal of Crystal Growth 163 (1995) 478-481 Author index Akao, M., see Ito 163 (19963)1 1 Chen, C.T., see Hu 163 (1996) 266 Akasaki, I. and H. Amano, Crystal growth of Chen, X.Q., see Li 163 (1996) 348 column-IIl nitride semiconductors and their Cheng, H., see Li 163 (1996) 339 electrical and optical properties 163 (1996) 86 Cherkashina, N.V., see Volkov 163 (1996) 377 Albrecht, J.H. Werner annd M., see Kihnle 163 (19964)7 0 Christoffersen, J., M.R. Christoffersen and T. Alvarez, J.C., see Harada 163 (1996) 31 Johansen, Kinetics of growth and dissolu- Amano, H., see Akasaki 163 (1996) 86 tion of fluorapatite 163 (1996) 295 Anderson, D.M., M.G. Worster and S.H. Davis, Christoffersen, J., M.R. Christoffersen and T. The case for a dynamic contact angle in Johansen, Some new aspects of surface nu- containerless solidification 163 (1996) 329 cleation applied to the growth and dissolu- Anselmo, A., J. Koziol and V. Prasad, Full-scale tion of fluorapatite and hydroxyapatite 163 (1996) 304 experiments on solid-pellets feed continu- Christoffersen, M.R., see Christoffersen 163 (1996) 295 ous Czochralski growth of silicon crystals 163 (1996) 359 Christoffersen, M.R., see Christoffersen 163 (1996) 304 Aoki, H., see Ito 163 (19963)1 1 Chu, J.H., see Li 163 (1996) 348 Arias, J.M., see Gonzdlez-Mufioz 163 (1996) 434 Chui, H.C., see Biefeld 163 (19962)1 2 Arima, Y., see Irisawa 163 (1996) 22 Chung, Hyung-Tae, Seung-Cheol Lee and Aspnes, D.E., see Kamiya 163 (1996) 67 Jong-Kyu Yoon, Numerical prediction of operational parameters in Czochralski Bach, H., see Brinkmann 163 (1996) 369 growth of large-scale Si 163 (1996) 249 Balakrishna, V., see Singh 163 (1996) 398 Chuvilin, A.L., see Volkov 163 (1996) 377 Banhart, F., see Zwanger 163 (1996) 445 Cui, Q., see Li 163 (1996) 339 Barata, P.A. and M.L. Serrano, Salting-out pre- Cui, S.F., see Li 163 (1996) 339 cipitation of potassium dihydrogen phosphate (KDP). II. Influence of agitation in- Dao Thi, M.H., see Lisgarten 163 (1996) 474 tensity 163 (1996) 426 Dash, J.G., see Ishizaki 163 (1996) 455 Beatty, K.M., see Jackson 163 (1996) 461 Davis, R.F., S. Tanaka and R.C. Ker, Micro- Ben Omar, N., see Gonzalez-Muiioz 163 (1996) 434 structural evolution and defect formation Bergmann, R., see Kiihnle 163 (1996) 470 during the initial stages of the growth of Biefeld, R.M., H.C. Chui, B.E. Hammons, W.G. silicon carbide and aluminum nitride on Breiland, T.M. Brennan, E.D. Jones, M.H. a(6H)-SiC(0001) substrates 163 (1996) 93 Kim, P. Grodzinski, K.H. Chang and H.C. Davis, S.H., see Anderson 163 (1996) 329 Lee, High purity GaAs and AlGaAs grown Dong, C., see Li 163 (1996) 339 using tertiarybutylarsine, trimethylalumium, Dong, H.K., see Tu 163 (1996) 187 and trimethylgallium 163 (19962)1 2 Bongers, M.M.G., see Li 163 (19961)9 5 Eguchi, M., see Kakimoto 163 (1996) 238 Breiland, W.G., see Biefeld 163 (19962)1 2 Brennan, S., see Kisker 163 (1996) 54 Brennan, S., see Kamiya 163 (1996) 67 Feng, Q., see Yanagisawa 163 (1996) 285 Brennan, T.M., see Biefeld 163 (19962)1 2 Ferelius, N., see Singh 163 (1996) 398 Brinkmann, M., T. Rex, H. Bach and K. West- Fukuda, T., see Shimamura 163 (1996) 388 erholt, Crystal growth of high-7,. supercon- Fukuda, T., see Kimura 163 (1996) 393 ductors Pr,_ ,Ce,CuO,,, with substitu- Fuoss, P.H., see Kisker 163 (1996) 54 tions of Ni and Co for Cu 163 (1996) 369 Fuoss, P.H., see Kamiya 163 (1996) 67 Furukawa, Y., see Ishizaki 163 (1996) 455 Cao, J.Y., see Li 163 (1996) 348 Chang, K.H., see Biefeld 163 (1996) 212 Gallagher, H.G., see Wang 163 (1996) 272 Author index Garside, J., see Taguchi 163 (19963)1 8 ate-containing hydroxyapatite single crys- Giling, LJ., see Li 163 (1996) 195 tals 163 (1996) 311 Giling, LJ., see Li 163 (1996) 203 Itoh, O., see Nugraha 163 (1996) 353 Gilmer, G.H., see Jackson 163 (1996) 461 Itoh, Y., see Harada 163 (1996) 31 Gonzflez-Mufioz, M.T., N. Ben Omar, M. Martinez-Cafiamero, M. Rodriguez-Gallego, Jackson, K.A., G.H. Gilmer, D.E. Temkin and A. Lépez Galindo and J.M. Arias, Struvite K.M. Beatty, Microsegregation far from and calcite crystallization induced by cellu- equilibrium 163 (19964)6 1 lar membranes of Myxococcus xanthus 163 (1996) 434 Jiang, J.H., see Hu 163 (19962)6 6 Grodzinski, P., see Biefeld 163 (19962)1 2 Jiang, S.S., see Hu 163 (19962)6 6 Jimbo, T., see Soga 163 (1996) 165 Hamakawa, E., see Hayakawa 163 (19962)2 0 Johansen, T., see Christoffersen 163 (19962)9 5 Hammons, B.E., see Biefeld 163 (19962)1 2 Johansen, T., see Christoffersen 163 (19963)0 4 Han, T.PJ., see Wang 163 (1996) 272 Han, Y., see Hu 163 (19962)6 6 Jones, E.D., see Biefeld 163 (19962)1 2 Harada, J., 1. Takahashi, Y. Itoh, N.S. Sokolov, N.L. Yakovlev, Y. Shusterman and J.C. Al- Kakimoto, K., K.-W. Yi and M. Eguchi, Oxy- varez, X-ray scattering from surfaces and gen transfer during single silicon crystal interfaces and its application to the charac- growth in Czochralski system with vertical terization of CaF, /Si(111) interfaces 163 (1996) 31 magnetic fields 163 (19962)3 8 Hatta, K., M. Higuchi, J. Takahashi and K. Kamiya, I., L. Mantese, D.E. Aspnes, D.W. Kodaira, Floating zone growth and charac- Kisker, P.H. Fuoss, G.B. Stephenson and S. terization of aluminum-doped rutile single Brennan, Optical characterization of sur- crystals 163 (19962)7 9 faces during epitaxial growth using RDS Hayakawa, Y., E. Hamakawa, T. Koyama and and GIXS 163 (1996) 67 M. Kumagawa, Rapid diffusion of Ga into Katsuyama, T., see Hiruma 163 (1996) 226 InSb and precipitation of In 163 (19962)2 0 Kem, R.C., see Davis 163 (1996) 93 Henderson, B., see Wang 163 (1996) 272 Key, D.L., see Lisgarten 163 (1996) 474 Henningsen, T., see Singh 163 (1996) 398 Khusnatdinov, N.N. and V.F. Petrenko, Fast- Higuchi, M., see Hatta 163 (19962)7 9 growth technique for ice single crystals 163 (1996) 420 Hiruma, K., H. Murakoshi, M. Yazawa and T. Kim, M.H., see Biefeld 163 (19962)1 2 Katsuyama, Self-organized growth of Kimura, H., V.V. Kochurikhin, K. Shimamura GaAs/InAs heterostructure nanocylinders and T. Fukuda, OH bands in (Dy,_ ,Gd,), by organometallic vapor phase epitaxy 163 (19962)2 6 Ga,O,,, Dy,(Ga,_,Al,)sO,, and related Hopkins, F.K., see Singh 163 (19963)9 8 oxides grown by the Czochralski method 163 (19963)9 3 Hotta, Y., see Tsutsui 163 (19964)4 0 Kishimoto, D., see Nishinaga 163 (1996) 60 Hu, X.B., S.S. Jiang, X.R. Huang, W. Zeng, Kisker, D.W., G.B. Stephenson, J. Tersoff, P.H. W.J. Liu, C.T. Chen, Q.L. Zhao, J.H. Jiang, Fuoss and S. BrenAtomnic ascanle s,tud ies Z.G. Wang, Y.L. Tian and Y. Han, The of epitaxial growth processes using X-ray formation mechanisms of dislocations and techniques 163 (1996) 54 negative crystals in LiB,O, single crystals 163 (19962)6 6 Kisker, D.W., see Kamiya 163 (1996) 67 Huang, J.-W., see Kuech 163 (1996) 171 Kochurikhin, V.V., see Kimura 163 (19963)9 3 Huang, X.R., see Hu 163 (19962)6 6 Kodaira, K., see Hatta 163 (19962)7 9 Kohno, T., see Shimamura 163 (19963)8 8 Ichimiya, A., H. Nakahara and Y. Tanaka, Komatsu, H., see Takemoto 163 (1996) 100 Atomic structures of Si{1 11) surface during Komura, T., see Yao 163 (1996) 78 silicon epitaxial growth 163 (1996) 39 Koukitu, A., N. Takahashi and H. Seki, In situ Inoue, T., see Takemoto 163 (1996) 100 monitoring of the GaAs growth process in loku, K., see Yanagisawa 163 (1996) 285 halogen transport atomic layer epitaxy 163 (1996) 180 Irisawa, T. and Y. Arima, Structural feature of Koyama, T., see Hayakawa 163 (19962)2 0 surface in MBE growth Monte Carlo simu- Koziol, J., see Anselmo 163 (1996) 359 lation 163 (1996) 22 Kuech, T.F., S. Nayak, J.-W. Huang and J. Li, Ishizaki, T.. M. Maruyama, Y. Furukawa and Chemical and physical effects in oxygen J.G. Dash, Premelting of ice in porous silica incorporation during the metalorganic vapor glass 163 (1996) 455 phase epitaxial growth of GaAs 163 (1996) 171 _ Ito, A., S. Nakamura, H. Aoki, M. Akao, K. Kiihnle, J., R. Bergmann, J.H. Wermer annd M. Teraoka, S. Tsutsumi, K. Onuma and T. Albrecht, Silicon surface passivation by Tateishi, Hydrothermal growth of carbon- metal layers for low-temperature epitaxy 163 (1996) 470 480 Author index Kumagawa, M., see Hayakawa 163 (1996) 220 Minoda, H. and K. Yagi, In-situ observations of Kuwano, N. and K. Oki, Ising model analysis growths of Si and Ge on metal-adsorbed of the formation mechanism of ordered Si(111) surfaces by REM-RHEED 163 (1996) 48 structures in III-V alloy semiconductors 163 (1996) 122 Miyashita, S., see Takemoto 163 (1996) 100 Kvit, A.V., see Volkov 163 (1996) 377 Moiseev, I.1., see Volkov 163 (1996) 377 Murakoshi, H., see Hiruma 163 (19962)2 6 Lazzarini, L., see Li 163 (1996) 195 Lee, Ching-Ting, Jih-Hsien Yeh and Yen-Tang Nakahara, H., see Ichimiya 163 (1996) 39 Lyu, Characterization of Nd-doped AsGaAs Nakamura, S., see Ito 163 (19963)1 1 grown by liquid phase epitaxy 163 (1996) 343 Nakayama, H., T. Takeguchi and T. Nishino, Lee, H.C., see Biefeld 163 (19962)1 2 Atom correlation and configurational order- Lee, Seung-Cheol, see Chung 163 (1996) 249 ing in pseudobinary epitaxial semiconduc- Li, Biao, J.H. Chu, J.Q. Zhu, X.Q. Chen, J.Y. tors 163 (1996) 135 Cao and D.Y. Tang, Morphology investiga- Nasi, L., see Li 163 (1996) 195 tion of Hg,_ ,Cd,Te liquid phase epitaxial Nayak, S., see Kuech 163 (1996) 171 films 163 (19963)4 8 Nishinaga, T., X.Q. Shen and D. Kishimoto, Li, J., see Kuech 163 (19961)7 1 Surface diffusion length of cation incorpora- Li, Ming, S.F. Cui, C. Dong, H. Cheng, F. Wu, tion studies by microprobe-RHEED/SEM Q. Cui and Z.H. Mai, Replication of steps MBE 163 (1996) 60 from substrate surface to superlattice inter- Nishino, T., see Nakayama 163 (1996) 135 faces 163 (1996) 339 Nishioka, K. and I.L. Maksimov, Reconsidera- Li, N.Y., see Tu 163 (1996) 187 tion of the concept of critical nucleus and Li, Y., G. Salviati, M.M.G. Bongers, L. Laz- the Gibbs—Thomson equation 163 (1996) 1 zarini, L. Nasi and LJ. Giling, On the Nishizawa, J., see Nugraha 163 (1996) 353 formation of antiphase domains in the sys- Novotortsev, V.M., see Volkov 163 (1996) 377 tem of GaAs on Ge 163 (1996) 195 Nugraha, O. Itoh, K. Suto and J. Nishizawa, Li, Y. and L.J. Giling, A closer study on the Growth and electrical properties of PbTe self-annihilation of antiphase boundaries in epitaxial layers grown by temperature dif- GaAs epilayers 163 (1996) 203 ference method under controlled vapor pres- Lisgarten, J.N., D. Maes, M.H. Dao Thi, L. sure liquid phase epitaxy 163 (1996) 353 Wyns, D.L. Key and J.A. Marks, Crystal orientation effect under microgravity condi- Oki, K., see Kuwano 163 (1996) 122 tions 163 (1996) 474 Onuma, K., see Ito 163 (19963)1 1 Liu, J. and R.H. Zee, Growth of molybdenum- based alloy single crystals using electron beam zone melting 163 (1996) 259 Peng, Dingkun, see Meng 163 (1996) 232 Liu, WJ., see Hu 163 (1996) 266 Petrenko, V.F., see Khusnatdinov 163 (1996) 420 Liu, Xi, see Meng 163 (1996) 232 Prasad, V., see Anselmo 163 (1996) 359 Lépez Galindo, A., see Gonz4lez-Muiioz 163 (1996) 434 Louchev, O.A., Thermal effects and kinetics in Rex, T., see Brinkmann 163 (19963)6 9 step-flow crystal growth of a-Hgl, 163 (1996) 411 Rodriguez-Gallego, M., see Gonzdlez-Mujioz 163 (1996) 434 Lyu, Yen-Tang, see Lee 163 (1996) 343 Salviati, G., see Li 163 (1996) 195 Madhukar, A., A unified atomistic and kinetic Sasaki, A., Atomic scale study of InAs/GaAs framework for growth front morphology heteroepitaxy 163 (1996) 143 evolution and defect initiation in strained Sato, K., see Tsutsui 163 (19964)4 0 epitaxy 163 (19961)4 9 Schréder, W., see Wollweber 163 (1996) 243 Maes, D., see Lisgarten 163 (19964)7 4 Schulz, D., see Wollweber 163 (1996) 243 Mai, Z.H., see Li 163 (19963)3 9 Seeger, A., see Zwanger 163 (1996) 445 Maksimov, I.L., see Nishioka 163 (1996) 1 Seki, H., see Koukitu 163 (1996) 180 Mantese, L., see Kamiya 163 (1996) 67 Serrano, M.L., see Barata 163 (1996) 426 Marks, J.A., see Lisgarten 163 (19964)7 4 Shen, X.Q., see Nishinaga 163 (1996) 60 Martinez-Cafiamero, M., see Gonzdlez-Muifioz 163 (19964)3 4 Shimamura, K., H. Takeda, T. Kohno and T. Maruyama, M., see ishizaki 163 (19964)5 5 Fukuda, Growth and characterization of lan- Meng, Guangyao, Xi Liu, Song Xie and thanum gallium silicate La,Ga,SiO,, sin- Dingkun Peng, (0001)-oriented growth of gle crystals for piezoelectric applications 163 (1996) 388 AIN films on Si(111) by microwave plasma Shimamura, K., see Kimura 163 (1996) 393 CVD with AIBr,-NH,—N, system 163 (1996) 232 Shusterman, Y., see Harada 163 (1996) 31 Singh, N.B., T. Henningsen, V. Balakrishna, Moiseev, V.M. Novotortsev, A.V. Kvit and D.R. Suhre, N. Femelius, F.K. Hopkins and A.L. Chuvilin, Long- and short-distance or- D.E. Zelmon, Growth and characterization dering of the metal cores of giant Pd clus- of gallium selenide crystals for far-infrared ters 163 (19963)7 7 163 (1996) 398 Soga, T., T. Jimbo and M. Umeno, Initial stage Wang, G., H.G. Gallagher, T.PJ. Han and B. of GaP /Si heteroepitaxial growth by met- Henderson, The growth and optical assess- alorganic chemical vapor deposition 163 (1996) 165 ment of Cr°*-doped RX(BO,), crystals Sokolov, N.S., see Harada 163 (1996) 31 with R = Y, Gd; X = Al, Sc 163 (19962)7 2 Stephenson, G.B., see Kisker 163 (1996) 54 Wang, Z.G., see Hu 163 (19962)6 6 Stephenson, G.B., see Kamiya 163 (1996) 67 Westerholt, K., see Brinkmann 163 (19963)6 9 Stringfellow, G.B. and L.C. Su, Step structure Wollweber, J., D. Schulz and W. Schroder, during OMVPE growth of ordered GalnP 163 (1996) 128 Su, L.C., see Stringfellow 163 (1996) 128 163 (1996) 243 Suhre, D.R., see Singh 163 (1996) 398 163 (1996) 329 Suto, K., see Nugraha 163 (1996) 353 163 (1996) 339 Suzuki, T., Oxygen partial pressure dependence 163 (1996) 474 of optical absorption in lithium niobate 163 (1996) 403 163 (1996) 232 Taguchi, K., J. Garside and N.S. Tavare, Nucle- ation and growth kinetics of barium sul- 163 (1996) 48 phate in batch precipitation 163 (19963)1 8 163 (1996) 31 Takahashi, I., see Harada 163 (1996) 31 163 (1996) 285 Takahashi, J., see Hatta 163 (19962)7 9 Yanagisawa, K., Q. Feng, K. loku and N. Ya- Takahashi, N., see Koukitu 163 (1996) 180 masaki, Hydrothermal single crystal growth Takeda, H., see Shimamura 163 (19963)8 8 of calcite in ammonium acetate solution 163 (1996) 285 Takeguchi, T., see Nakayama 163 (1996) 135 Yao, T., K. Uesugi, T. Komura and M. Takemoto, J., S. Miyashita, T. Inoue and H. Yoshimura, Atomistic study on solid phase Komatsu, Liquid phase epitaxial growth of epitaxy processes on Si(100) surfaces by the bismuth based superconductors 163 (1996) 100 scanning tunneling microscope 163 (1996) 78 Tanaka, S., see Davis 163 (1996) 93 Yasuda, Y., see Zaima 163 (1996) 105 Tanaka, Y., see Ichimiya 163 (1996) 39 Yazawa, M., see Hiruma 163 (19962)2 6 Tang, D.Y., see Li 163 (19963)4 8 Yeh, Jih-Hsien, see Lee 163 (19963)4 3 Tateishi, T., see Ito 163 (19963)1 1 Yi, K.-W., see Kakimoto 163 (19962)3 8 Tavare, N.S., see Taguchi 163 (19963)1 8 Yoon, Jong-Kyu, see Chung 163 (19962)4 9 Temkin, D.E., see Jackson 163 (19964)6 1 Yoshimura, M., see Yao 163 (1996) 78 Teraoka, K., see Ito 163 (19963)1 1 Tersoff, J., see Kisker 163 (1996) 54 ZaimS.a an,d Y. YasStuudieds oan th,e s up- Tian, Y.L., see Hu 163 (19962)6 6 pression of Ge segregation during Si over- Tsirkov, G.A., see Volkov 163 (19963)7 7 growth on Ge(n ML)/Si({100) substrates by Tsutsui, K., Y. Hotta and K. Sato, Melt crystal- gas-source MBE 163 (1996) 105 lization of behenic acid in microspheres dis- Zangwill, A., Some causes and a consequence persed in polymer 163 (19964)4 0 of epitaxial roughening 163 (1996) 8 Tsutsumi, S., see Ito 163 (19963)1 1 Zee, R.H., see Liu 163 (19962)5 9 Tu, C.W., H.K. Dong and N.Y. Li, Growth, Zelmon, D.E., see Singh 163 (19963)9 8 etching, doping and effects of Ar* laser Zeng, W., see Hu 163 (19962)6 6 irradiation in chemical beam epitaxy of Zhang, S.B. and A. Zunger, Predicted structures GaAs with novel precursors 163 (1996) 187 and stabilities of the surface A grooves and double bilayer height steps on the Uesugi, K., see Yao 163 (1996) 78 GaAs(001)-2 X 4 surface 163 (1996) 113 Umeno, M., see Soga 163 (1996) 165 Zhao, Q.L., see Hu 163 (19962)6 6 Zhu, J.Q., see Li 163 (19963)4 8 Van Tendeloo, G., see Volkov 163 (1996) 377 Zunger, A., see Zhang 163 (1996) 113 Vargaftik, M.N., see Volkov 163 (1996) 377 Zwanger, M.S., F. Banhart and A. Seeger, For- Volkov, V.V., G. Van Tendeloo, G.A. Tsirkov, mation and: delay of spherical concentric- N.V. Cherkashina, M.N. Vargaftik, [.1. shell carbon clusters 163 (1996) 445 jouemnor CRYSTAL GROWTH Joumal of Crystal Growth 163 (1996) 482-483 Subject index Aluminum Kinetics — gallium arsenide 343 — of dissolution 295, 304 — nitride 93, 232 - of growth 54, 60, 143, 149, 232, 295, 304, 318, 411, 420, 445, Apparatus 461 - for high 7, crystals 369 — of interface control 86, 149 — for fast growth of ice 420 — of nucleation 54, 67, 426, 440 — for large single crystals of bone and tooth mineral 311 Lasers, see Device characterization Barium Lead — sulphide 318 — telluride 353 Calcium - fluoride 31 Melt growth technique Computer simulation — by Bridgman-Stockbarger method — of front growth morphology 149 — of gallium selenide 398 — of segregation 461 — of indium gallium antimonide 220 — of temperature distribution 238 by Czochralski method Convection 420 — of dysprosium gadolinium gallium garnet 393 Copper — of dysprosium gallium aluminum gamet 393 — Il oxalate 474 - of lanthanum gallium silicate 388 — of lithium niobate 403 Device characterization — of silicon 238, 359 — electronic materials 212 — theory of large scale growth 249 — lasers 272, 398 by floating zone method — piezoelectric bulk acoustic wave 388 — of aluminum doped rutile 279 Diffusional control — of molybdenum alloys 259 — of cation incorporation 60 by zone melting - of silicon germanium 243 Electronic materials, see Device characterization - theory Epitaxy, see Thin film growth -— - of dynamic contact angle 329 - — of microsegregation 461 Fullerene 445 Mercury — cadmium telluride 348 Gallium - iodide 411 — arsenide 54, 60, 149, 171, 180, 187, 195, 203, 212, 226 Microgravity, growth under — indium arsenide 149 - of copper two oxalate 474 — indium phosphide 128 — theory of dynamic contact angle 329 — phosphide 165 Monte Carlo simulation — selenide 398 — of ordered structure 122 Germanium 48, 105 Morphological stability — of fullerene 445 Hydrodynamics, see Convection — of mercury cadmium telluride 348 Ice 420, 455 Indium Nucleation — arsenide 60, 143, 226 — of barium sulphide 318 — gallium antimonide 220 — of behenic acid 440 of calcite 434 of potassium dihydrogen phosphate 426 of struvite 434 theoryo f — — critical nucleus | Phase diagram - of indium gallium antimonide 220 — of ternary borates 272 Precursor - for gallium aluminum arsenide 212 — for gallium arsenide 187, 212 — for fullerene formation 445 Silicon 39, 48, 78, 105, 238, 359 — of struvite 434 — of aluminum gallium arsenide 149 by flux method of aluminum nitride 93 - of gadoalluiminnum ibouratme 2 72 of calcium fluoride 31 ~ of gadolinium scandium borate 272 of gallium arsenide 60, 149 ~ Of lithium triborate 266 of indium arsenide 60, 143, 149 - of ytterbium aluminum borate 272 of indium gallium arsenid1e4 9 — of ytterbium scandium borate 272 of silico3n9 by hydrothermal growth — of calcit2e8 5 — of hydroxy apatite 311 by low temperature method - of beheanciid c44 0 - of palladium clusters 377 - of silico4n7 0 — theory of supersaturati3o1n8 Stefan problem or moving boundary — — of gallium aluminum nitride 86 ~ ofd ynamic contact angle 329 - — of gallium arsenide 54, 67, 171, 195, 203, 212 Superconductivity materials, high 7. — — of gallium indium nitride8 6 — bulk ; ; — — of gallium indium phosphide 128 — - of praseodymium cerium copper oxide 369 - - of gallium nitride 86 ~ — of gallium phosphide 165 — — theoorfy 5 4 — through microwave plasma chemical vapor deposition - — of aluminum nitride 232 Vapor growth technique — by evaporanda ctonidenosantio n — - of alpha mercuiordiidec 41 1 — — theory of coupled step flow 411 — of gallium arsenide 171 ~ Vapor—liquid—soglroiwdt h - of germanium 48 ~ of ice 420 Surface structure — of gallium arsenide 54, 67, 113, 180 Whisker growth — of ice 455 — of gallium arsenide 226 — of molecular beam epitaxy 22 — of indium arsenid2e2 6