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Implementation of an all-electron GW approximation based on the PAW method without plasmon pole approximation: application to Si, SiC, AlAs, InAs, NaH and KH PDF

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Preview Implementation of an all-electron GW approximation based on the PAW method without plasmon pole approximation: application to Si, SiC, AlAs, InAs, NaH and KH

Implementation of an all-electron GW approximation based on the PAW method without plasmon pole approximation: application to Si, SiC, AlAs, InAs, NaH and KH S. Leb`egue,1,2 B. Arnaud,3 M. Alouani,1,4 and P. E. Bloechl4,5 1Institut de Physique et de Chimie des Mat´eriaux de Strasbourg (IPCMS), UMR 7504 du CNRS, 23 rue du Loess, 67037 Strasbourg, France, EU 3 2Department of Physics, University of California, Davis, California 95616 0 3Groupe Mati`ere condens´ee et Mat´eriaux (GMCM), 0 Campus de Beaulieu - Bat 11A 35042 Rennes cedex, France, EU 2 4Kavli Institute of Theoretical Physics, University of California, Santa Barbara, Ca 93111 n 5Institute of Theoretical Physics, Clausthal University of Technology, a Leibnizstr. 10 D-38678 Clausthal Zellerfeld, Germany, EU J (Dated: February 2, 2008) 7 A new implementation of the GW approximation (GWA) based on the all-electron Projector- 1 Augmented-Wavemethod(PAW)ispresented,wherethescreenedCoulombinteractioniscomputed withintheRandomPhaseApproximation(RPA)insteadoftheplasmon-polemodel. Twodifferent ] i ways of computing the self-energy are reported. The method is used successfully to determine the c quasiparticle energies of six semiconducting or insulating materials: Si, SiC, AlAs, InAs, NaH and s - KH.Toillustratethenoveltyofthemethodtherealandimaginarypartofthefrequency-dependent l self-energytogetherwiththespectralfunctionofsiliconarecomputed. Finally,theGWAresultsare r t compared with other calculations, highlighting that all-electron GWA results can differ markedly m from those based on pseudopotential approaches. . t a PACSnumbers: 71.15.-m,71.15.Mb,71.20.Nr m - d I. INTRODUCTION tion the validity of the former approaches. n However,someattemptshavebeenmadetogobeyond o the plasmon-pole approximation.7,10,17,18,19,20,21 In par- c For many weakly correlated materials, the density- ticular, Aryasetiawanhas approximately determined the [ functionaltheory1(DFT)inthelocal-densityapproxima- screening within the RPA using a linear muffin-tin or- 1 tion (LDA) provides a good description of their ground- bital method within the atomic sphere approximation7 ( v state properties. However, DFT is not able to describe LMTO-ASA).Thismethod,althoughfast,approximates 0 correctly their excited states. Thus, for example, the the space by atomic centered overlapping spheres, thus 2 band gaps in the LDA are typically much smaller than completely neglecting the interstitial region, and hence 3 the experimental values. Quasiparticle (QP) electronic- making the reliability of the GW method uncertain. 1 structure calculations beyond the DFT are therefore 0 Kotani and van Schilfgaarde based their full-potential 3 highly desirable. LMTOGWcalculation17ontheworkofAryasetiawanby The GW approximation (GWA) of Hedin2,3, which 0 takingintoaccountcorrectlytheinterstitialregion. Nev- / produces a good approximation for the electron’s self- erthelesstheirmethodisnotquiteaccuratesinceintheir t a energy Σ, enables us to make first-principle QP calcula- implementation they didn’t take into account the multi- m tions for realistic materials. Thus, the GWA has been plicityofthesameangularmomentaforagivenprincipal successfully applied to the calculation of QP electronic - quantumnumberinthebasisset(likesimultaneouslyus- d structures of many kinds of materials4,5,6,7. In particu- ing the 3d and 4d states). Finally, Ku and Eguiluz pro- n lar, recent success has been achieved on predicting the ducedselfconsistentandnon-selfconsistentQPbandgaps co metal-insulator transition of bcc hydrogen,8 electronic based on an approximate Luttinger-Ward functional,18 excitationsofyttriumtrihydride,9aswellastheQPelec- : the non-selfconsistent results are much smaller than all v tronic structure of copper.10 Unfortunately, most of the existing GW calculations. Since these results are based i X GWA implementations are based on the pseudopoten- onadifferentschemewehavechosennottodiscusstheir tialtypeofapproachestogetherwithplasmon-pole(PlP) r methodfurther. Ontheotherhand,severalpseudopoten- a models.11,12,13,14,15,16 Theweaknessofthesetypesofcal- tial have produced GW results without resorting to the culations is that the imaginary part of the self-energy is plasmon-pole approximation. These methods, although not accessible, making it impossible to determine spec- interesting,usepseudowavefunctionsandhencecanonly tral functions and hence to interpret photoemission ex- determine pseudo-matrix elements of operators, making periments. In addition the PlP approximation is ex- themdifficulttojustifyasquantitativeandreliablemeth- pected not to hold for systems with localized electrons. ods for computing QP properties. Moreover, it has been noticed recently15,17 that GWA The major purpose of this paper is then to present implementations basedonpseudopotentialmethods lead a new implementation of the GWA method using to larger and more k-dependent shifts than calculations theall-electronfull-potentialProjectorAugmented-Wave based on all-electron DFT methods, bringing into ques- 2 method(PAW)completebasisset,andwithoutusingany interaction W yields the successful GW approximation PlP model for the determination of the dielectric func- for Σ. In this approximation, both the non-locality and tion. The screening of the Coulomb interaction is thus the dynamical correlations are included. Assuming that described in the Random Phase Approximation (RPA), the difference Σˆ −Vˆ between the self-energy and the xc avoiding further approximations. Kohn-Sham exchange and correlation potential is small, The paper is organizedas follows. In section II we de- we can use a perturbation theory approach to solve the scribe our implementationofthe GW approximation. In effective QP Hamiltonian Hˆqp Section III we present our QP calculations for Si, SiC, AlAs, and InAs and also for the alkali hydrides com- Hˆqp =Hˆ +(Σˆ −Vˆ ) (2) KS xc pounds NaH and KH (to our knowledge this is the first GWA study of these alkali hydrides). At the end of this and determine the QP energies by expanding the real section we compare and discuss our results with other partofselfenergytofirstorderaroundǫ (k)thusmaking n calculations and experiments. the comprison with the PlP models possible ReE (k))=ǫ (k)+Z × n n nk II. FORMALISM [hΨ |ReΣ(r,r′,ǫ (k))|Ψ i−hΨ |VLDA(r)|Ψ i](3) kn n kn kn xc kn A. The PAW method where the QP renormalizationfactor Z is given by nk The PAW formalism has been well-described ∂ elsewhere,22,23,24,25 so we will not discuss it in this Znk =[1−hΨkn|∂ωReΣ(r,r′,ǫn(k))|Ψkni]−1. (4) paper. The PAW method22 is a very powerful all- electron method for performing electronic structure This assumptionis valid for simple sp bonded materials, calculations within the framework of the LDA. It takes since it was shown that the QP wave function ψ and kn advantage of the simplicity of pseudopotential methods, Kohn-Shamwavefunction Ψ are almostidentical, i.e., kn but describes correctly the nodal behavior in the aug- the QP Hamiltonian Hˆqp is diagonal in the Ψ basis kn mentation regions. The selfconsistent calculation of the for simple sp bonded semiconductors.11,12 We therefore electronic structure is performed using the Car-Parinello assume this behavior for the materials studied in this method over the occupied states. To determine the paper. According to this equation, the LDA eigenval- eigenvaluesandeigenvectorsofallunoccupiedstates (up ues ǫ (k) are then corrected by the GW approximation. n to 200 eV above the top of the valence states) needed The numerical work is therefore considerably reduced, for the GW calculations, we have extracted the selfcon- but still computationally demanding. sistent full-potential, constructed and diagonalized the Inourimplementation,wehavecalculatedtheGreen’s PAW Hamiltonian for every irreducible k point in the functiononlyforthevalenceandconductionstates. One Brillouin zone. has then to subtract out only the valence exchange and correlationpotentialinEq. (3). Tochecktheaccuracyof this procedure, we have also used the so-called Hartree- B. The GW approximation Fockdecoupling,15,26 andhavefoundthattheaverageer- rorintheQPenergiesofSiwithrespecttothetopofthe 1. Quasiparticle energies valencestatesis0.05eV.Theapproximationmadehereis theonecurrentlyusedinallpseudopotential-basedGWA In general, the QP energies E (k) and wave function calculations, making our method compatible with exist- n ψ (r) are determined from the solution of the QP ing GW implementations. kn equation (T +V +V )ψ (r)+ d3r′Σ(r,r′,E (k))ψ (r′) ext h kn n kn 2. Screened Coulomb interaction R =E (k)ψ (r) (1) n kn Forthecalculationoftheself-energy,oneneedstoeval- whereT is thefree-electronkinetic energyoperator,V uate the dynamically screened interaction W(r,r′,ω), ext theexternalpotentialduetotheioncores,V theaverage which can be rewritten in reciprocal space as: h electrostatic(Hartree)potential,andΣ the electronself- eEnqe.rgy(1)opiserafitnodri.ngTahne amdaeqjouratdeiffiacpuplrtoyxicmonantieocntefdorwtihthe WG,G′(q,ω)=4π|q+1G|ǫ˜−G1,G′(q,ω)|q+1G′|. (5) self-energy operator Σ(r,r′,E (k)). Nonetheless, it was n shownbyHedin2,3 thatwritingtheself-energyasaprod- The symmetrized dielectric matrix ˜ǫGG′(q,ω) is defined uct of the Green’s function and the screened Coulomb in the random phase approximation (RPA) by27 3 8π ǫ˜GG′(q,ω) = δGG′ − Ω|q+G||q+G′| MGvc(k,q)[MGvc′(k,q)]∗ vX,c,k 1 1 × − , (6) (cid:18)ω+ǫ (k−q)−ǫ (k)−iδ ω−ǫ (k−q)+ǫ (k)+iδ(cid:19) v c v c with the following notation: integraloftheselfenergynumerically. Inourimplementa- tion,weneedtocomputeǫ˜GG′(q,ω)alongtheimaginary MGnm(k,q)=hΨk−qn|e−i(q+G)r|Ψkmi, (7) axis and for some real frequencies. This technical point will become clearer in the next subsection. where v and c denote, respectively, the valence and con- To reduce the computationalcostofthe GWA, we use ductionstates,andδ apositiveinfinitesimal. Thematrix symmetryproperties. Detailsabouttheutilizationofthe elements given by Eq. (7) are evaluated using the PAW symmetry for the static dielectric matrix has been al- basis set as described in Ref. 15. readygivenelsewhere5,15,28,29,sowejustdescribebriefly Most of GWA calculations use a kind of PlP approx- how to use the symmetry in the case of the dynamical imation. This is computationally efficient since one ob- dielectric function. For the case of pure imaginary fre- tains an analytic expression for the integral in the self- quencies,wecouldsafelyignorethebroadeningfactoriδ; energy. Itisnotclear,however,thatthiskindofapprox- inthiscase˜ǫGG′(q,iω)ishermitianandwecouldusethe imation is valid for describing the QP of different kind symmetry just as in the static case. We can then write of materials. It is for this reason that we have chosen to the symmetrized dielectric matrix as avoidthe PlPmodelaltogether,tocompute the dynami- caldielectricfunctionintheRPA(6),andtoperformthe 8π ǫ˜GG′(q,iω) = δGG′ − Ω|q+G||q+G′| MRvcG(k,q)[MRvcG′(k,q)]∗ k∈XBZqXv,c RX∈Gq 1 1 × − , (8) (cid:18)iω+ǫ (k−q)−ǫ (k) iω−ǫ (k−q)+ǫ (k)(cid:19) v c v c where Gq is the little group of the point group G such WG,G′(q,ω) only for irreducible points of the first Bril- that Rq=q; R being a symmetry operation. The com- louin zone (BZ). We then determine easily the screened putational cost is further reduced by noticing that interaction for all k-points in the Brillouin zone using symmetry properties. ˜ǫGG′(Rq,iω)=ǫ˜R−1GR−1G′(q,iω). (9) for real ω, although the dielectric matrix is not hermi- tian, we could use the symmetry by making a decom- 3. Self Energy position into hermitian and anti-hermitian parts of the polarizability PGG′(q,ω). if we define AGG′(q,ω) and BGG′(q,ω) by The selfenergyΣ is the keyquantity ofany GWAcal- culation. As previously noticed, we have chosento avoid AGG′(q,ω)= PGG′(q,ω)+2 PG†G′(q,ω) (10) pdleanscmeoonf-tphoelescmreoedneelsdainntdercaocmtiponutWe ΣwwitihthintthheeωRPdeAp.en- First,wesplittheintegralofthe selfenergyintoabare and exchange or Hartree-Fock contribution ΣX and an en- BGG′(q,ω)= PGG′(q,ω)−PG†G′(q,ω), (11) eenrgeyrgdyepeffenecdtesntbecyoonntrdibΣutXio.nTΣhCe(ωm)awtrhixicheledmesecnrtibseosfstehlfe- 2i self-energy are now given by the sum of then equations (8) and (9) still hold, allowing us to perform the same computational tasks as for the 4π occ |Mmn(k,q)|2 symmetrized dielectric matrix with imaginary frequen- hΨ |ΣX|Ψ i=− G (12) kn kn Ω |q+G|2 cies. This procedure makes it possible to first compute Xq Xm XG 4 where the summation is over occupied states, and TABLEI:Calculatedquasiparticleenergiesofsiliconforsome pointsintheBrillouin zonewithourtwodifferentimplemen- hΨ |ΣC(ω)|Ψ i kn kn tations. The results are in good agreement with each other. In thelast line, theminimum band gap Eg is presented. 1 = Ω [MGmn(k,q)]⋆MGm′n(k,q) First methoda Second methodb Xq GXG′Xm Γ1v −11.85 −11.87 × CGmG′(k,q,ω) (13) Γ25′v 0.00 0.00 Γ15c 3.09 3.09 with Γ2′c 4.05 4.06 Cm (k,q,ω) X1v −7.74 −7.68 GG′ X4v −2.90 −2.91 i WC (q,ω′) X1c 1.01 1.03 = dω′ GG′ (14X)4c 10.64 10.59 2π Z ω+ω′−ǫm(k−q)+iδsgn(ǫm(k−q)−µ) L2′v −9.57 −9.50 where WC is defined as WC = W − v, with v being L1v −6.97 −6.90 the bare Coulomb potential. To evaluate this integral L3′v −1.16 −1.17 directly on the real axis one should compute WC for L1c 2.05 2.03 many points ω′ since the shape of WC along the real L3c 3.83 3.83 axis is rather ragged. Even though this has been done by some authors,10 we choose to avoid this difficulty Eg 0.92 0.90 by using the fact that WC is well behaved along the aContour deformationmethod imaginary axis. In the present work, we have performed bAnalyticcontinuation method this integral using two different methods: In the first one, the contour of the frequency integral (14) is deformedina wayto obtainanintegralalongthe imaginary axis plus contributions from the poles of the analyticallycontinuedto the realaxis by fitting it to the Green’s function. In this case, we obtain the following following Pad´e form expression: Cn (k,q,ω) GG′ a +a z+a z2+..+a zN 0 1 2 N P(z)= (15) = −π1 Z0∞dω′′WGCG′(q,iω′′)(ω−ωǫn−(kǫn−(kq)−)2q+) ω′′2. b0+b1z+b2z2+..+bMzM ±WGCG′(q,±(ω−ǫn(k−q)))θ(±(ω−ǫn(k−q))) where ai and bi are complex parameters that are deter- ×θ(±(ω−µ))θ(±(ǫ (k−q)−µ)) mined during the fit along the imaginary axis. Values n of 5 for N and of 6 for M provided us with an accu- Thefirsttermrepresentsthecontributionalongtheimag- rate and stable fit. The same kind of continuation has inary axis and is evaluated by Gaussian quadrature. alsobeenappliedwithsuccesstocomputethedynamical The second is from the poles of the Green’s function response function,30,31 so we are confident of its relia- and its computation is done by fitting values of WC bility. The main difference between the work presented at ±(ω − ǫ (k − q)) from values on a given mesh of hereandthatofRef. (19)isthatourcodestartsfroman n frequencies54. HereµdenotestheFermilevelintheLDA all-electron basis, so we are not using fast Fourier trans- andω′′isdefinedtobereal. Thismethodissimilartothe forms to switch between real and reciprocal spaces and one used by Aryasetiawanfor the implementation of the between time and frequency domains. Our expression GWA based on the LMTO method in the atomic sphere (15) is also different, but we believe that this is of minor approximation7 (ASA), and within the GWA of Kotani importance55. and coworkers based on the full-potential linear muffin- In both cases, the integration over the first Brillouin tin orbital (FP-LMTO) method.17 The reader can find zone is done by the special-point technique.32 The num- more details about this integration procedure in Refs. ber of bands as well as the number of G vectors in (13) 7,17. Similar work has been also carried out by Bechst- is increased until the QP energies are converged. Simi- edt and coworkers20 as well as by Fleszar and Hanke21 larly, the number of frequency points ω′ for which WC starting from a pseudopotential approach. is computed is increased until Cn (k,q,ω) is well con- GG′ Inoursecondimplementation,whichissimilartothatof verged. The two different implementations allow us to Ref. 19, we evaluate the matrix elements of the correla- check carefully our results, and as can be seen in Table I tive part of the self-energy hΨ |ΣC(ω)|Ψ i for a set of for the case of silicon, the QP energies are insensitive to mk lk imaginary frequencies iω, the resulting quantity is then the method used to compute the self-energy. 5 4. Treatment of the Coulomb divergence TABLEII: Lattice constants a(in atomic units)and energy cutoffsEcut(inRydberg)usedforourPAWcalculations. The The last point we wish to discuss is an additional dif- lattice constants are from Ref. 35, unless stated otherwise. ficulty which occurs when evaluating the self-energy by a summation of the q points over the full BZ. We can- a Ecut Si 10.26 20 not apply the special-point technique directly since the SiC 8.24 25 integrands have a 1/q2 singularity for q → 0 as can be AlAs 10.67 20 seen for example by putting G = 0 in the expression InAs 11.41 20 of the exchange term given by (12). The difficulty can NaH 9.28a 40 be removedby adding and subtracting a term which has KH 10.83a 40 thesamesingularitiesastheinitialexpression,andwhich canbe evaluatednumericallyandanalytically. As acon- aReference36 sequence, the integrals over the BZ are rewritten G(q)= [G(q)−A F(q)]+A F(q), (16) toprovideus withthe coordinatesofthe new 6points in Xq Xq Xq the BZ.56 The computational cost is further reduced by finding equivalent points among those 6 points, and we whereF(q)isanauxiliaryperiodicfunctionthatdiverges end up with wellbehavedand easily evaluatedBZ sums. like 1/q2 as q vanishes. The term is regular and can be evaluatedbythespecialpointtechniquewhereasthelast sum is evaluated analytically. For the exchange term, it III. NUMERICAL RESULTS AND DISCUSSION isnotdifficulttoevaluateAin(16),butitgetsmorecom- plicated for the correlative part of the self-energy (13). In this section we present our theoretical quasiparti- ThepurposeoftheoffsettedΓ-pointmethod17 istoavoid cle energies for the six materials studied in this paper, the evaluation of the quantity A, but still to be able to together with the available theoretical and experimen- dealwith the divergence. The main idea is to find a new tal results. In Sec. IIIA we report our results for four mesh of points such that semiconductors(Si,SiC,AlAs, InAs)ofzinc-blendetype structure, while Sec. IIIB is devoted to studying the al- F(q)= F(q′) (17) kali hydrides NaH and KH in the rocksalt phase. Table Xq Xq′ II presents the experimental lattice parameters and the energy cut offs E used for the final convergedcalcula- wheretheΓ-pointisincludedintheoldmeshqbutnotin cut tions. the new one q′: the Γ-point is replaced by other points (different from Γ) to construct the q′ grid in order to fulfill Eq. (17). Eq. (16) is therefore rewritten as: A. Results for Si, SiC, AlAs, and InAs G(q)= [G(q)−A F(q)]+A F(q′), (18) Xq Xq Xq′ Siliconisprobablythemostcarefullystudiedsemicon- ductor, and several GWA results are available. Using Then we show by inspection that the term silicon as a prototype will allow us to test our method [G(q)−A F(q)] is equal to [G(q′)−A F(q′)] by making careful comparisons with previous GWA cal- q q′ wPith a controlled error,Eq. (18) tPransforms to culations. As mentioned earlier, our code presents two different ways for calculating the self-energy. We there- G(q) = G(q′) (19) fore test their accuracy for silicon in Table I. We find Xq Xq′ that the results of the two methods are almost identical, showing that they are equally reliable for computing the because the two terms which contain the function F(q) self-energy. In particular, our implementation with the cancel out since they are evaluated on the same q′ grid. extrapolation procedure makes it possible to represent We have therefore avoided the evaluation of the compli- the full-frequency dependence of the self-energy with a cated A term in Eq. (16). small additional computational cost. Fig. 1 shows the Theremainingpointstobeaddressedarethechoiceof real and imaginary parts of Σ along the real axis for sil- the function F(q) and the number of additional points icon at the Γ point for a wide range of frequencies. The forthenewmeshusedtosolve(17). Inourcase,wewrite agreement with previous work is excellent.19 A special feature of our work is the possibility of exp(−|q+G|2) obtaining the imaginary part of the self-energy (see F(q)= |q+G|2 Fig. 1), a task virtually impossible within the PlP XG approximation57. The spectral function which can be and choose to add 6 points to the original q mesh in obtained directly from the self-energy order to get the new mesh. Equation (17) is then solved 6 10 0.2 00 band1 bands 2-4 V) -1V) bands 5-7 > (e-10 ω) (e0.1 band 8 ω) (A ( Σ <-20 band 1 e R bands 2-4 bands 5-7 -30 0 band 8 -60 -40 -20 0 20 40 60 ω (eV) -4-0100 -50 0 50 100 FIG. 2: Spectral function hΨkm|A(ω)|Ψkmi for the first 8 40 bandsforsiliconatk=0. Thezeroofenergyisatthecenter ofthebandgap. ThesharppeaksareQPpoles,theirweights band 1 correspond to thefactor Z definedin Eq. 4. 30 bands 2-4 bands 5-7 V)20 band 8 this energy step we determine an energy grid which we e > ( use to produce an accurate fit to WGCG′(q,±(ω−ǫn(k− ω) 10 q))) for the different points ±(ω−ǫ (k−q)). All these n ( Σ high values of the parameters ensure the convergence of < m 0 the QP energies to within 0.05 eV. I Table III shows the excellent agreement of our results -10 with twoother all-electronGWAimplementations ofthe QP energies of silicon. From this table it seems that, at least for Si, the overall difference between the RPA and -20 -100 -50 0 50 100 the PlP results is small.58. Nevertheless, a discrepancy ω (eV) of as much as 0.18 eV for the energy of L is obtained. 1v It seems then, at least for Si, the PlP model overesti- FIG.1: RehΨkm|Σ(ω)|Ψkmi andImhΨkm|Σ(ω)|Ψkmishown mates only slightly the differences between the energy for the first 8 bands for silicon at k=0. The zero of energy levels within the GWA. is at thecenter of the band gap. Table IV compares the calculated QP energies for 3C-SiC (also known as β-SiC), AlAs and InAs with experimental data as well as with pseudopotential-GWA hΨ |A(ω)|Ψ i= km km (PP-GWA) calculations. The band gaps are given at Γ, |ImhΨ |Σ(ω)|Ψ i| X,andLandareunderlinedinthis table. Thesestudies km km [ω−ǫ (k)−RehΨ |Σ(ω)|Ψ i]2+[ImhΨ |Σ(ω)|Ψ i]2are motivated by the fact that SiC is a material of high m km km km km current technological interest and that InAs is predicted is of major interest since it can be used for the in- to be metallic in the LDA, whereas AlAs is used as a terpretation of experimental photoemission and inverse- test case. A general trend of our implementation is photoemissionspectra. Asanexample,thespectralfunc- that the agreement with experiment as well as with tion of silicon at the Γ point is shown in Fig. 2. The PP-GWA results is not perfect, as also found by other sharp peaks correspond to QP excitations, while the in- implementations based on all-electron methods;15,17 coherentpartofthefunction,thespectralbackground,is reporting differences up to 0.4 eV. In particular, the muchcomplicatedandcouldcorrespondtoplasmontype largestdifferenceoccursfortheΓ′ →X transition.59 25v 1c excitations. We showed in a previous study15 for the case of silicon The QPcalculations havebeen performedusing 256k that these differences are mainly traced back to differ- points in the full BZ. The size of the dielectric matrix ences between the exchange-correlationmatrix elements defined in Eq. (6) is 137×137 for siliconand SiC, 169× obtained by the two methods. We believe that this can 169 for AlAs, 181×181 for InAs. 200 bands were used be extended to other materials as well, since it seems to forthesumoverconductionstatesinEq. (6)andforthe be a general feature60 of all-electron GWA calculations. sum over m in Eq. (13). Due to the smoothness of the In fact, the difference between all-electron and PP integrand along the imaginary axis, 11 points are found based GW calculations is not surprising since the use sufficient to obtain well convergedquantities. An energy of pseudo-wave functions for evaluating matrix elements step of 1.5 eV is used for the part of Eq. (15) which of a general operator produce results that may not be corresponds to the poles of the Green’s function. Using sufficiently precise, because the pseudo-wave functions 7 TABLE III: Selected energy eigenvalues, in eV, at Γ, X and L for Si. Our results are compared with two other all-electron implementations of the GW method and with experimental results. Data in parentheses are results when the denominator of theGreen’s function is updated with QPenergies. Data in the last line correspond to theminimum energy gap Eg. LDA GW approximation Expt.c Present LAPWa Present PAW-PlPb LAPWa Γ1v −11.97 −11.95 −11.85 (−11.89) −11.92 −12.21 -12.5±0.6 Γ′25v 0.00 0.00 0.00 (0.00) 0.00 0.00 0.00 Γ15c 2.54 2.55 3.09 (3.15) 3.16 3.30 3.40,3.05d Γ′2c 3.23 3.17 4.05 (4.12) 4.09 4.19 4.23, 4.1d X1v −7.82 −7.82 −7.74 (−7.78) −7.91 −8.11 X4v −2.85 −2.84 −2.90 (−2.92) −2.98 −3.03 -2.9e, -3.3±0.2f X1c 0.61 0.65 1.01 (1.08) 1.10 1.14 1.25d X4c 10.02 10.64 (10.72) 10.74 L′2v −9.63 −9.63 −9.57 (−9.60) −9.66 −9.92 -9.3±0.4 L1v −6.99 −6.98 −6.97 (−7.00) −7.15 −7.31 -6.7±0.2 L′3v −1.19 −1.19 −1.16 (−1.17) −1.24 −1.26 -1.2±0.2 L1c 1.44 1.43 2.05 (2.11) 2.08 2.15 2.1g,2.4±0.15 L3c 3.30 3.35 3.83 (3.90) 3.92 4.08 4.15±0.1h Eg 0.55 0.52 0.92 (0.95) 0.97 1.01 1.17 aReference14 bReference15 cUnlessnoted,Ref35 dReference38 eReference39 fReference40 gReference41 hReference42 are constructed to reproduce the all-electron wave everonlyfewstudieshavebeenpublishedabouttheelec- functions only in the interstitial region, i.e., outside the tronicstructures.48,49,52 Inthesematerials,hydrogenbe- atomic spheres. This is however a good representation havesasanH−ion,leadingtopartlyionicmaterialswith forstudyingpropertiesthatdependonlyonthebehavior a larger band gap than the studied ’sp’ semiconductors. of the wave function in the bonding region. An error is It is, therefore, of interest to know whether the GWA is then introduced in any PP-GWA calculation. This error capableofproducingsuchlargebandgaps. Inthisstudy seems to fortuitously have a tendency to improve the we are only concerned with the determination of their agreement with experiment, explaining the exceptional QP energies for the rocksalt crystallographic structure. success of the PP-GWA. InFig. 3 wereportthe QPbandstructuresofNaHand For InAs, the incorrect metallic behavior obtained KH along some high-symmetry directions,61 and present within the LDA is corrected by our GWA calculation. a detailedoverviewoftheir LDA andQP energiesin Ta- The GWA produces the true semiconducting state as ble V. In the following we detail and compare our re- given by experiment. Since we did not account for the sults with existing experimental and calculated results: spin-orbit coupling in our calculation, we have simply For NaH, the authors of Ref. 48 reported an LDA cal- averaged out the spin-orbit-split experimental values to culation with an improved LMTO method in its atomic make the comparison with our work possible. sphere approximation, however, from their band struc- ture plotwe estimated thattheir band gapis only about 2.7 eV and is direct at the L point. This disagrees with ourcalculation,since atthe LDA levelwe foundanindi- rectbandgapof3.39eVfromW toL. Thiscouldbedue B. Results for the alkali hydrides NaH and KH to Ref. 48’s use of a different value of the lattice param- eter of 8.90 a.u. A calculation by Kunz and Michish49 Alkali hydride materials exhibit a structural phase based on the electronic polaron model produced a direct transitionfromthe B1 (NaClstructure)to the B2 (CsCl bandgapatX of1.52eV,a valuetoo lowfor theseionic structure) type structure under hydrostatic pressure. A materials,sothatitshouldbetakenonlyataqualitative numberofstudieshavebeenperformedtounderstandthe level.62 However, our LDA results are in full agreement equation of state of these materials,36,37,48,49 as well as with results ofRef. 52, where an indirect bandgap from the possibility ofaninsulator-metaltransition,50,51 how- 8 TABLE IV: Quasiparticle energies in eV at Γ, X and L for SiC, AlAs, and InAs. Data in parentheses are results when the denominator of the Green’s function is updated with QP energies. Our results are compared with PP-GW method and with experimental results (minimum band gaps are underlined). LDA GW Expta Present PPb Present PPb SiC Γ′25v →Γ15c 6.25 6.41 7.32(7.45) 7.35 Γ′25v →X1c 1.28 1.31 1.80(1.89) 2.34 2.39 Γ′25v →L1c 5.34 5.46 6.45(6.56) 6.53 4.2 AlAs Γ′25v →Γ15c 1.94 1.77 2.72(2.79) 2.75 3.11c Γ′25v →X1c 1.32 1.20 1.57(1.65) 2.08 2.24 Γ′25v →L1c 2.06 1.89 2.73(2.80) 2.79 2.49c;2.54d InAs Γ′25v →Γ15c -0.07 -0.39 0.46(0.49) 0.59 0.60 Γ′25v →X1c 1.48 1.57 (1.61) 2.10 Γ′25v →L1c 1.05 1.54 (1.58) 1.52 1.74 aUnless noted Ref 35. For InAs, data have been averaged to account fortheneglectofspin-orbitcouplinginourcase. bFor SiC, PP results are from Ref. 43, for AlAs from Ref. 44, for InAs from Ref. 45 and averaged to account for the neglect of spin-orbitsplitting. cReference46. dReference47. 9 TABLEV: QuasiparticleenergiesineVatΓ,X,L,W,andK forNaHandKH.Thelastlineshowstheminimumbandgap Eg. Data in parentheses are results when the denominator of theGreen’s function is updatedwith QPenergies. Weare notawareofanyexperimentalstudyconcerningtheelectronic band structureof thesematerials. NaH KH LDA GW LDA GW Γ1v -3.64 -3.39 (-3.59) -2.07 -2.02 (-2.11) Γ1c 9.98 11.89 (12.38) 7.47 9.81 (10.43) Γ25′c 14.98 16.71 (17.24) 7.57 10.16 (10.74) Γ15c 15.72 17.87 (18.11) 9.33 11.98 (12.53) X1v -0.13 -0.12 (-0.12) -0.18 -0.18 (-0.20) X4′c 4.00 6.23 (6.66) 4.91 7.49 (8.01) X3c 9.59 11.45 (11.96) 5.18 7.92 (8.47) X5′c 9.95 12.15 (12.60) 8.76 11.68 (12.24) X1c 10.84 12.95 (13.36) 9.27 12.31 (12.86) L1v -1.03 -1.03 (-1.06) -0.15 -0.19 (-0.20) L2′c 3.39 5.68 (6.11) 3.18 5.85 (6.35) L1c 10.24 12.13 (12.59) 6.86 9.69 (10.23) L3′c 12.89 15.14 (15.61) 8.46 10.49 (11.18) L3c 15.42 17.34 (17.77) 10.98 13.57 (14.03) W1v 0.00 0.00 (0.00) 0.00 0.00 (0.00) W3c 5.43 7.79 (8.24) 4.96 7.60 (8.13) W2′c 7.75 10.08 (10.55) 6.70 9.40 (9.94) W1c 15.50 17.57 (17.98) 10.50 13.03 (13.55) W3c 17.08 19.16 (19.57) 10.73 13.25 (13.78) FIG. 3: Calculated LDA (doted lines) and GW (full lines) electronic band structures of NaH and KH along some high- K1v -0.13 -0.12 (-0.12) -0.06 -0.06 (-0.07) symmetrydirections. Thesecalculations areperformed using K3c 4.71 6.96 (7.41) 4.84 7.50 (8.02) theparameters reported in Table II. K1c 5.84 8.11 (8.56) 4.94 7.62 (8.18) K4c 10.57 12.85 (13.27) 8.13 10.72 (11.38) K1c 11.02 13.09 (13.52) 8.36 10.94 (11.54) W to L of about 3.3 eV was found. Table V shows that Eg 3.39 5.68 (6.11) 3.18 5.85 (6.35) the energy level differences of NaH are substantially in- creased by the use of the GWA compared with the LDA results. In particular, the minimum band gap is 5.68 eV within the GWA, whereas it’s only 3.39 eV within the LDA. An other interesting point is that we found that the most used scissors-operatorshift seems not to apply for the computation of optical properties of NaH. This 2.71 eV at the L point. is because the band gap is increased by 1.66 eV at the It is surprising to notice that, across the whole Bril- Γ point, and as much as 2.34 eV for the direct transi- louin zone, the GW band gap shift of KH is larger than tion at L point. A GWA calculation of the QP energies that of NaH despite that the LDA band gap of NaH is in the full BZ is then required for the study the optical largerthanthatofKH.Thereasonforthispuzzlinglarge properties of NaH. Table V shows also our LDA and QP shiftisthatthescreeningoftheCoulombpotentialinKH results for potassium hydride. Our LDA results are in isfoundtobe lessefficientthaninNaH.Indeed,wehave goodagreementwith the calculationin Ref. 52. We find found that the RPA static dielectric function of NaH is thatinbothLDAandGWAcalculations,thebandgapis 3.43 much larger than that of KH which is about 2.62. indirectfromW toL,andcouldeasilyswitchtoa direct ThehybridizationisalsolessstrongforKHthanforNaH, gap with a small lattice parameter variation since the since the band width of hydrogen s-states is about 2.02 valence band (1s state of hydrogen) is very flat, i.e., the eV for KH (much smaller than the 3.64 eV band width valences states at the X, L, W, and K have the same of NaH). As a consequence,the higher excited states are energies within 0.2 eV accuracy. The previous remark lower in energy, across the Brillouin zone, by about 2 to about the non-validity of the scissors-operator shift still 5 eV for KH than for NaH. We hope that our predictive holds here for the same reasons. The LDA band gap in- resultswillstimulateexperimentaliststoperformphotoe- creases by an amount of 2.29 eV at Γ, and as much as mission or optical studies of these interesting materials. 10 IV. CONCLUSION as the computation of QP lifetimes will be presented in future work. The method is currently being applied We have presented an implementation of the GWA to determine the excitation properties of LiH, and using the all-electron PAW method where the screened the results will be reported elsewhere.53 Moreover, Coulomb interaction is obtained using the RPA dy- the use of symmetry and an efficient implementation namical dielectric function. Thus we avoided the use make us confident that we will soon be able to study of the plasmon-pole approximation. We have applied systems with a large number of atoms per unit cell, like it to study the QP energies of Si, SiC, AlAs, and surfaces or polymers. Furthermore, because we use a InAs and found that a precise comparison with other mixed basis-set in our implementation we could study availabletheoreticalandexperimentalresultsshowsthat systemswith localized’d’or’f’electronswith a reduced sometimesthe GWAcanleadtonoticeablediscrepancies computational cost compared with methods based only with experiments. Those discrepancies are generally not a plane wave basis-set. so pronounced in the pseudopotential GWA calculations using PlP models. We argued that the approximations used in the pseudopotential method have a tendency to fortuitously improve the agreement with experiment. Acknowledgments We have presented detailed results for the first time for NaH and KH alkali hydrides, and showed that Oneofus(S.L.)isparticularlygratefultoW.E.Pick- the GWA enhanced substantially the LDA band gaps, ett since part of this work was done during a visit to motivating further theoretical and experimental studies. the University of California Davis supported by DOE Since our method can compute the imaginary part grant DE-FG03-01ER45876. Supercomputer time was of the self-energy, we could then determine the QP provided by CINES (project gem1100)on the IBM SP3. lifetimes, a task not possible using the PlP approxima- Thisresearchwassupportedinpartbythe NationalSci- tion. Further inspection of spectral properties as well ence Foundation under Grant No. PHY99-07949. 1 P. Hohenberg and W. Kohn, Phys. Rev. 136 (1964); W. 121, Issues 9-10, 461 (2002). Kohn and L.J Sham, Phys.Rev. 140, A1113 (1965). 18 W. Ku and A. G. Eguiluz, Phys. Rev. Lett 89, 12401 2 L. Hedin,Phys. 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