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DTIC ADA470952: Introducing Defects in 3D Photonic Crystals: State of the Art PDF

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Preview DTIC ADA470952: Introducing Defects in 3D Photonic Crystals: State of the Art

Form Approved REPORT DOCUMENTATION PAGE OMB NO. 0704-0188 Public Reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comment regarding this burden estimates or any other aspect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office of Management and Budget, Paperwork Reduction Project (0704-0188,) Washington, DC 20503. 1. AGENCY USE ONLY ( Leave Blank) 2. REPORT DATE Advanced 3. REPORT TYPE AND DATES COVERED Materials, 18, 2665–2678 Journal Reprint, September 2006 (2006). 4. TITLE AND SUBTITLE 5. FUNDING NUMBERS Introducing defects in 3D photonic crystals: State of the art DAAD190310227 6. AUTHOR(S) P. V. Braun, S. A. Pruzinsky, and F. Garcia-Santamaria 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION University of Illinois-Urbana-Champaign REPORT NUMBER 109 Coble Hall 801 S. Wright Street Champaign, IL 618206242 9. SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSORING / MONITORING AGENCY REPORT NUMBER U. S. Army Research Office P.O. Box 12211 Research Triangle Park, NC 27709-2211 4 5 1 0 5 . 5 3 - M S - M U R 11. SUPPLEMENTARY NOTES The views, opinions and/or findings contained in this report are those of the author(s) and should not be construed as an official Department of the Army position, policy or decision, unless so designated by other documentation. 12 a. DISTRIBUTION / AVAILABILITY STATEMENT 12 b. DISTRIBUTION CODE Approved for public release; Government Rights 13. ABSTRACT (Maximum 200 words) 3D photonic crystals (PhCs) and photonic bandgap (PBG) materials have attracted considerable scientific and technological interest. In order to provide functionality to PhCs, the introduction of controlled defects is necessary; the importance of defects in PhCs is comparable to that of dopants in semiconductors. Over the past few years, significant advances have been achieved through a diverse set of fabrication techniques. While for some routes to 3D PhCs, such as conventional lithography, the incorporation of defects is relatively straightforward; other methods, for example, selfassembly of colloidal crystals (CCs) or holography, require new external methods for defect incorporation. In this review, we will cover the state of the art in the design and fabrication of defects within 3D PhCs. The figure displays a fluorescence laser scanning confocal microscopy image of a y-splitter defect formed through two-photon polymerization within a CC. 14. SUBJECT TERMS 15. NUMBER OF PAGES 14 16. PRICE CODE 17. SECURITY CLASSIFICATION 18. SECURITY CLASSIFICATION 19. SECURITY CLASSIFICATION 20. LIMITATION OF ABSTRACT OR REPORT ON THIS PAGE OF ABSTRACT UNCLASSIFIED UNCLASSIFIED UNCLASSIFIED UL NSN 7540-01-280-5500 Standard Form 298 (Rev.2-89) Prescribed by ANSI Std. 239-18 298-102 R E V I E W DOI:10.1002/adma.200600769 Introducing Defects in 3D Photonic Crystals: State of the Art** By Paul V. Braun,* Stephanie A. Rinne,* and Florencio García-Santamaría* 3D photonic crystals (PhCs) and photonic bandgap (PBG) materials have attracted considerable scientific and technological interest. In or- der to provide functionality to PhCs, the introduction of controlled de- fects is necessary; the importance of defects in PhCs is comparable to that of dopants in semi- conductors. Over the past few years, significant advances have been achieved through a diverse set of fabrication techniques. While for some routes to 3D PhCs, such as conventional lithogra- phy, the incorporation of defects is relatively straightforward; other methods, for example, self- assembly of colloidal crystals (CCs) or holography, require new external methods for defect incorporation. In this review, we will cover the state of the art in the design and fabrication of defects within 3D PhCs. The figure displays a fluorescence laser scanning confocal microscopy image ofay-splitterdefect formedthroughtwo-photonpolymerizationwithinaCC. 1.Introduction arenaturallyclassifiedbythedimensionalityoftheirperiodic- ity,andinordertorigorouslypreventthepropagationofPBG Photonic crystals (PhCs) are materials that possess spatial frequencies in all directions, a 3D PhC with an omnidirec- periodicity in their dielectric constant on the order of the tional,orcompletePBG(cPBG)isrequired. wavelength (k) of light. These materials can strongly modu- cPBG materials have been fabricated and well character- late light[1] and, with sufficient dielectric contrast and an ap- ized for operation at microwave and radio frequencies, how- propriate geometry, may exhibit a photonic bandgap (PBG). ever,operationinthevisibleandIRrequiresthecharacteris- This concept was first proposed in 1975 by Bykov[2] but re- tic length scales of these structures to be scaled down by mained relatively unknownuntil the seminal work of Yablo- several orders of magnitude, necessitating 3D fabrication novitch[3] and John.[4] In a rough analogy to semiconductors, techniques capable of defining structures with sub-microme- whichpossessanelectronicbandgap,aPBGmaterialprohib- ter-tomicrometer-scaleperiodicityandnanometer-scalereso- its the existence of photons with energies in the PBG. PhCs lution.Additionally,cPBGstructuresmustbefabricatedfrom opticallytransparentmaterialswithahighdielectricconstant. Intheopticalregime,thereisalimitedsetofmaterialssatisfy- – ing these conditions, largely ruling out organic and metallic [*] Prof.P.V.Braun,Dr.S.A.Rinne,Dr.F.García-Santamaría materials, most oxides, andmany semiconductor-basedstruc- DepartmentofMaterialsScienceandEngineering tures. Because of the materials restrictions and stringent 3D BeckmanInstituteforAdvancedScienceandTechnologyand FrederickSeitzMaterialsResearchLaboratory fabricationrequirements,thereareonlyasmall,butgrowing, UniversityofIllinoisatUrbana-Champaign numberofcPBGmaterialsthathavebeenconstructedinthe 1304WestGreenSt.,Urbana,IL61801(USA) visible or IR. A review of PBG fabrication methods can be E-mail:[email protected];[email protected];[email protected] foundintheliterature.[5]Thedevelopmentofefficient,practi- [**] The authors thank the following for support: the U. S. Army Re- search Laboratory and the U. S. Army Research Office grant caltechniquesamenabletothefabricationofcPBGmaterials DAAD19-03-1-0227;theNationalScienceFoundation;andtheU.S. operating in the visible to IR remains a vibrant area of re- Department of Energy, Division of Materials Sciences grant search,withnewapproachesregularlybeingintroducedinthe DEFG02-91ER45439,throughtheFrederickSeitzMaterialsResearch LaboratoryattheUniversityofIllinoisatUrbana-Champaign. literature. Adv.Mater.2006,18,2665–2678 ©2006WILEY-VCHVerlagGmbH&Co.KGaA,Weinheim 2665 P.V.Braunetal./IntroducingDefectsin3DPhotonicCrystals W E I V E R ManyapplicationshavebeenidentifiedforPhCsandPBG larly, point defects may be defined within PBG materials to materials, including low-threshold lasers,[3] low-loss wave- create embeddedoptical cavities. Suchcavities containing an guides,[6–8] on-chip optical circuitry,[9] and fiber optics.[10,11] emitting material could be usedto inhibit spontaneousemis- The majority of these applications not only require a PBG sion. material,butalsotheprecise,controlledincorporationofpre- Thisreviewwillfocusontheincorporationofdefectsin3D engineered defects. These defects disrupt the periodicity of PhCs that operate at optical wavelengths and it is organized thecrystal,creatingopticalstateswithintheotherwiseforbid- bythetypeofdefectandthetechniqueusedtofabricatethe den bandgap frequencies. Therefore, light coupling to these PhC lattice. Defect fabrication techniques will be evaluated statescanbelocalizedwithinthedefectregionsandmanipu- ontheirpotentialresolution,accuracyofregistrationwiththe latedbyengineeringthedefectgeometryandplacement.For underlyingPhClattice,flexibilityindefiningcomplicatedem- example, a complicated 3D defect with sharp bend radii bedded3D structures, andtheir potential to incorporatema- (ca.k) may be engineered to guide light along its complex terialsthatmightimpartadditionalfunctionality.Ifavailable, pathwithoutlossif definedwithina cPBG material.[12] Simi- opticalcharacterizationandtheoreticalmodelingofthesede- Paul V. Braun is an Associate Professor and Willett Faculty Scholar in Materials Science and Engineering,theFrederickSeitzMaterials ResearchLaboratory,andtheBeckmanInstitutefor AdvancedScienceandTechnology,attheUniversityofIllinoisatUrbana-Champaign(UIUC). Prof.Braunhasauthoredfourbooksoreditedvolumes,55publications,andmultipleproceed- ings and abstracts. He is the recipient of a Beckman Young Investigator Award (2001), a 3M NontenuredFacultyAward,the2002RobertLansingHardyAwardfromTMS,giventooneout- standingmaterialsscientisteachyear,theXeroxAwardforFacultyResearch(2004),andmulti- pleteachingawards.ProfessorBraunreceived hisB.S.degreefromCornellUniversityin1993, and his Ph.D. in Materials Science and Engineering from UIUC in 1998, both in Materials Science and Engineering.Following a one year postdoctoral appointment at Bell Labs, Lucent Technologies,hejoinedthefacultyatUIUCin1999. StephanieRinne(née Pruzinsky)wasa National Science Foundation(NSF)graduatefellowin the Department of Materials Science and Engineering at the UIUC. Her Ph.D. thesis work in Prof. Braun’sgroupfocusedonthetwo-photonpolymerizationandoptical characterization of embedded features within self-assembled photonic crystals. Upon completion of her Ph.D. Stephanie began a postdoctoral fellowship at the Beckman Institute for Advanced Science and TechnologyatUIUCinJuly,wheresheisworkingintheareaofbiomedicalimaging.Stephanie received her B.S. in Materials Science and Engineering at Rensselaer Polytechnic Institute in 2000. As an undergraduate, she participated in NSF summer research projects in surface and interfacialscienceattheUniversityofMassachusettsatAmherstandStanfordUniversity. Florencio García-Santamaría is a postdoctoral scientist in Prof. Braun’s group in the Depart- mentofMaterialsScienceandEngineeringatUIUC.Hismajorresearchinterestshavebeenthe opticalcharacterizationandfabricationof3Dphotoniccrystals.FlorencioreceivedhisB.S.de- greeintheoreticalphysicsfromtheUniversidadAutonomadeMadrid(UAM)in1998.Hisdoc- toratewasconductedattheInstituteofMaterialsScienceofMadrid(ICMM-CSIC)wherehein- vestigated self-assembled artificial opalsand developed a method to fabricate photonic crystals withdiamondsymmetry,workingwithProfs.CefeLopezandFranciscoMeseguer.Heobtained his M.S. (2001) and Ph.D. (2003) degrees from the UAM; his work as a graduate student was namedthe‘Outstandingdissertationof2003–2004’atthesameuniversity. 2666 www.advmat.de ©2006WILEY-VCHVerlagGmbH&Co.KGaA,Weinheim Adv.Mater.2006,18,2665–2678 P.V.Braunetal./IntroducingDefectsin3DPhotonicCrystals R E V I E W fectswillbeincluded.Wecategorizedefectsintwotypes:in- removing a line of cylinders from the initial design, linear trinsicandextrinsic.Intheformercasedefectformationdoes waveguides can be introduced into a 2D PBG material not require any special processingaside from that needed to (Fig.1).[18,19] Point defects, formed by removing or reshaping form the PhC itself (e.g., conventional photolithography and air cylinders, serveasresonantcavities thatcan trapphotons direct writing). In the latter case, the PhC fabrication tech- of certain frequencies.[18] Through proper engineering, very niquelacksaninherentmeansfortheincorporationofdefects highQcavities(upto600000)havebeenreported(Fig.2).[20] (e.g.,holographiclithographyandself-assembly)andtheyare Furthermore,variousdefectdesignshavebeenproposedand, introducedbeforeorafterformationofthePhC. in some cases, realized for low-loss waveguides containing sharp bends,[8] channel drop filters,[21,22] and T-shaped branches.[23] By introducing active materials (e.g., quantum 2.Defectsin2DPhCs wellsordots)inthedesignofthePhCthepossibilityofusing point defects as resonant cavities for lasing action has also Initially 2D PhCs did not generate as much excitement as beendemonstrated.[24–26] their 3D counterparts since they cannot rigorously confine lightinalldimensions.However,duetothesubstantialfabri- cation and modeling advantages in two dimensions, the ex- 3.Defectsin3DPhCs perimental and theoretical work on defect-containing 2D PhCsissignificantlyadvancedoverthaton3DPhCs.Thecon- Although 2D PhCs containing exquisitely designed defects finementoflightwithintheplaneofa2DPhCisachievedby haveexhibitedpowerfulopticalproperties,itremainstruethat sandwiching the 2D PhC between Bragg reflectors,[13] 3D PhCs,[14]orlower-indexmaterials,includingair,toutilizetotal internalreflection.[15] 2DPhCsthatoperateatopticalwavelengthshaveaperiod- icityofca. 100nm–1lmwithfeaturetolerancesinthenano- meter range. Typical 2D PhCs consist of triangular arrays of aircylindersinadielectricmaterial,asthisgeometrycanyield a 2D PBG foranypolarization,providedthedielectric hasa refractive index over 2.7.[16] With state of the art lithogra- phy,[13,17]followedbyreactive-ionorelectrochemical etching, high-resolution2DPhCscanbedefinedinhigh-refractive-in- dexmaterialsincludingsiliconandIII-Vsemiconductors. Theadditionofdefectstothesestructuresiscarriedoutsi- Figure1.Scanningelectronmicroscopy(SEM)imageofamacroporous multaneously with the fabrication of the 2D PhC, affording silicon2DPhCcontainingalinedefect.Theporepitchis1.5lmandthe excellent registration between the defects and the lattice. By PhCis100lmdeep.Reproducedfrom[19]. Figure2.a)SEMimageandb)spectrafromaphotonicdoubleheterostructurenanocavity.Theinsetsin(b)showanear-fieldimageandhigh-resolu- tionspectrumoftheresonance.Alinewidthof2.8pmandaQ-factorof600000wereobserved.Reproducedwithpermissionfrom[20].Copyright 2005Macmillan. Adv.Mater.2006,18,2665–2678 ©2006WILEY-VCHVerlagGmbH&Co.KGaA,Weinheim www.advmat.de 2667 P.V.Braunetal./IntroducingDefectsin3DPhotonicCrystals W E I V E R complete confinement of light can only be achieved by extending the PBG into the third dimension. From a fabrication and materials standpoint, 3D systems containingdefineddefectstructurespres- ent a difficult set of challenges. For a cPBGatopticalwavelengths,ahigh-reso- lution3Dfabricationtechniqueandhigh dielectricconstantmaterialsarerequired, significantlylimitingbothpossiblemate- rials and processing routes. Still, several processing routes to cPBG materials have been identified. Those that are amenable to defect fabrication will be coveredinthissection.Importantconsid- erations will be discussed, including po- tentialresolution,accuracyofdefectreg- istration with the PhC lattice, ability to definecomplicatedstructures,andpoten- tial for incorporation of materials with advanced functionalities. Although still limited,opticalcharacterizationandthe- oretical modeling of these defects will alsobereviewed. Figure3.SEMimages:a,b)sideandtopviewsof3DPhCsbuiltusingconventionallithographic techniques((a)reproducedwithpermissionfrom[30].Copyright1998Macmillan).b)Thestruc- turecontainsasharpbenddefectformedbyleavingoutrodportionsduringPhCfabrication.Re- 3.1.IntrinsicDefects producedwithpermissionfrom[12].Copyright2000AAAS.c)SchematicofaPhCcontainingpoint defectsfabricatedusingsimilartechniques.d)Simulatedandmeasuredopticalspectraobtained 3.1.1.ConventionalLithography fromthestructurein(c);thedefectstatecanbeobservedinboth.Reproducedwithpermission from[31].Copyright2004Macmillan. As the microelectronics industry has demonstrated, top-down lithography cancreateextraordinarilycomplexmultilayerstructures.Such waveguidestructureswithsharpbends(Fig.3b).[12]Transmis- layer-by-layer processing routes have now been exploited to sion and reflection through such a bend was simulated create3DPBGmaterialscontainingdefineddefectstructures. through a finite difference time domain (FDTD) method.[29] On one hand, lithographic approaches have a number of Thelayer-by-layerapproachpioneeredbyLinetal.followsa shortcomings,fromcostandpractical limitationstothenum- classical device-fabrication process with repeated cycles of beroflayers.Forexample,formingmultilayerstructuresiste- photolithography, wet and dry etching, chemical mechanical diousanddifficult,requiringstate-of-the-artprocessingequip- planarization,andsequentialgrowthofSiN,Si,andSiO thin 2 ment to overcome layer-to-layer registration issues. On the films (Fig. 3a).[30] Following a related layer-by-layer proce- other hand, the infrastructure for lithographic approaches is dure, Qi etal. successfully fabricated a 3D cPBG structure extraordinarily well developed and, for some device applica- containing defined point defects (Fig.3c).[31] Optical charac- tions, will probably be the method of choice for integrating terization showed the presence of defect states in agreement 3DPCswithmicroelectronics. with theoretical simulations performed with a FDTD meth- The lithographic methods reported in the literature follow od[32](Fig.3d). conventional2Dlithographyandpattern-transfertechniques, andvaryprimarilyintheprocedureusedtostackthemultiple 3.1.2.ElectrochemicalEtching layers to create a 3D PhC (Fig.3). Lithographic approaches arehighlysuitableforformingwoodpilestructuresconsisting Theformationofperiodicarraysofmicrometer-sizedpores of high-dielectric-constant rods assembled such that the con- inn-typesiliconthroughanodicetching[33]isanapproachthat tact points form a diamond lattice.[27] Noda and co-workers has greatly advanced over the past decade and now enables developed a ‘wafer-fusion’ method in which multiple layers the fabrication of Si-based 3D PhCs containing defined de- arecreatedonseparatesubstratesandthenalignedandfused fects(Fig.4).Asubstrateisfirstpatternedwithpyramidalpits together.[28]Leavingoneormorerodsoutoftheoriginalpat- through standard lithography followed by an isotropic wet tern yields defects in the final 3D structure, for example, etch.WhenthesubstrateisthenplacedinaHFacidsolution 2668 www.advmat.de ©2006WILEY-VCHVerlagGmbH&Co.KGaA,Weinheim Adv.Mater.2006,18,2665–2678 P.V.Braunetal./IntroducingDefectsin3DPhotonicCrystals R E V I E W 3.1.3.GlancingAngleDeposition Glancingangledeposition(GLAD)isarelativelynewtech- niqueamenabletothelarge-areamicrofabricationof3Dtetrag- onalsquarespiralPhCs,[42]structureswhicharetheoreticallyca- pable ofpossessing a large and robust cPBG.[43,44] GLADhas beenusedtogrowmaterialsofinterestforPhCs,includingSiO , 2 Si,Ge,TiO ,andMgF .First,aflatsubstrateispatternedwitha 2 2 regulararrayofshortseedpostsviaelectron-beam(e-beam)or photolithography.Then,thesubstrateisexposedtoacollimated vaporfluxatalargeincidentangle,suchthatself-shadowingoc- cursduringnucleation.Throughshadowingandthelimitedada- tomsurfacediffusion,nucleationandgrowthonlyoccuronthe top surface of the seed posts and oriented pillars emerge and growtowardthesourceoftheincidentvaporflux.Byappropri- ately rotating the substrate during deposition, the growth and shapeofthesestructurescanbecontrolled,enablingthegrowth ofcircular,square,orpolygonalspiralsandtheincorporationof Figure4.SEMsideviewimageofa3DPhCcontainingaplanardefect fabricatedbyelectrochemicaletching.Thedefecthasawidthof2.65lm. embeddedplanartwistandspacinglayerdefects(Fig.5).[45]Ad- ReproducedwithpermissionfromG.Mertens[39].Copyright2005Amer- ditionally,byeliminatingpointsorlinesintheinitialseedpat- icanInstituteofPhysics. tern,siliconorair2Dpointorlinedefectsthatextendthrough the thickness of the crystal have been defined.[46,47] Photonic bandstructure calculations have been performed for homoge- under an electrical bias, the enhanced current density at the neous3DGLADstructures,[43,44]however,thereisonlylimited tips of the pyramidal pits drives selective etching and propa- opticalcharacterizationofeitherhomogeneousanddefect-con- gates cylindrical holes through the substrate creating a 2D tainingGLADstructures.Transmissionsimulationshavebeen structure.[34] The method can be used to create 3D PhCs by performed on heterostructures composed of two tetragonal modulating the light intensity during the etching with HF, squarespiralPhCsthatsandwicha2DPhCcontainingpointand varyingthenumberofchargecarrierswhichinturnmodifies line defects.[14] The optical properties of ambichiral TiO thin 2 thedissolutionoftheSi.Thus,bymodulatingtheillumination filmswithvariouspolygonalheliceshavebeeninterrogated.By intensity,theinternalmicrostructure,andthuslocalrefractive comparing right- and left-handed circularly polarized trans- indexofthesampleiscontrolled.[35–37] mitted light, the defect mode arising from an embedded twist Thisfabricationtechniquepresentsseveraladvantages,per- layer defect was identified.[45] Although considerable work haps the most significant of which is that the structure is remains, and complex arbitrary embedded defects can not be formedfromsilicon, whichhasa high refractive index andis directly formed by GLAD, for applications that require only verywellunderstood.Thereisthepossi- bility for excellent control of the pore shape,[38] since the structure in the z- axiscanbecontrolledindependentlyof the other two axes. This feature makes theintroductionofplanardefectstrivial since the structure in the z-axis is di- rectlycontrolledbytheilluminationin- tensity (Fig.4).[39] Also, linear defects normal to the surface are possible by modifyingtheinitial patternofthepyr- amidal pits. There are two significant shortcomingswiththisfabricationtech- nique. First, the introduction of arbi- trarilyshapeddefectspresentsanunre- solved problem. Second, structures createdthiswayshowatbestaverynar- rowcPBG[40]unlesstheprocessiscom- bined with focused-ion-beammilling of Figure5.a)GLADschematic.b)SEMsideviewimageofa3DPhCcontaininga150nmplanarde- channels,[41] which significantly reduces fectfabricatedwithGLAD.ReproducedwithpermissionfromA.C.vanPopta[45].Copyright2005 thesimplicityofthismethod. AmericanInstituteofPhysics. Adv.Mater.2006,18,2665–2678 ©2006WILEY-VCHVerlagGmbH&Co.KGaA,Weinheim www.advmat.de 2669 P.V.Braunetal./IntroducingDefectsin3DPhotonicCrystals W E I V E R simpletwist,planar,orstraight-linedefects,GLADmayenable Through optical trapping it is now possible to concurrently therapid,andrelativelylowcost,fabricationofPhCstructures manipulate 3D arrays of colloidal microspheres.[52] Introduc- overlargeareas. tion of defects should be possible by simple modification of thetraparray.Unfortunately,sincethismethodrequiresaliq- 3.1.4.Micromanipulation uidmediumandthetrapscannotbeallowedtooverlap,itwill bedifficulttodirectlyformclose-packed,mechanicallystable Micromanipulation is an intriguing approach for the crea- structures that retain their structure upon solvent removal. tion of nearly arbitrary 3D structureswithout the limitations Perhaps,throughnewchemistriesandassemblyroutes,itwill ofconventionallithography. Here,thePhC isbuiltin a com- becomepossibletocreatestructuresthatcansurvivethedry- pletely serial fashion from building blocks. For PhCs operat- ing process. To date, monolayers containing limited numbers ing in the visible ornear-IR regime the buildingblocksneed of colloids have been formed through optical trapping fol- tocontainsub-micrometerfeatures, andthustheuseofopti- lowedbysupercriticaldrying.[53] cal tweezers or high-resolution robots attached to scanning Despitethemanyadvancesinopticaltrappingandrobotics, electron or optical microscopes are ideal candidates for ma- including automatic image recognition[54] that will eventually nipulatingthebuildingblocks. improve and accelerate the process of fabrication, the use Throughtheuseofananorobot,[48]thefirstdiamondstruc- of micromanipulation assembly techniques seems to be re- ture formed out of colloidal microspheres was fabricated strictedtosmallsamplesforscientificresearch. (Fig.6a).[49] Aglassprobenanomanipulatorwasfirstusedto assemble polystyrene and silica microspheres into a body- 3.1.5.DirectWriting centeredstructure;subsequentremovalofthesacrificialpoly- styrene spheres led to a diamond structure of touching silica DirectwritingofPhCshasbeengrowingininterestdueto microspheres.[50]Throughtheappropriateplacementofpoly- boththeeaseofincorporationofdefects,andanumberofre- cent successes in 3D PhCs, including promising optical spec- troscopy.[55,56] In principle, direct writing involves nothing morethanconvertinga3Dcomputeraideddesignintoatar- getmaterial.Becausetherequireddimensionsareonthemi- crometerscale,traditionalfabricationtechniques,suchasrap- id prototyping, are not suitable and new approaches have been required. The most promising to date appear to be ro- boticinkwriting[55,57,58]andlaserwritingbytwo-photonpoly- merization(TPP)[56,59](Fig.7). Figure6. SEM image of PhCs fabricated with the aid of a nanorobot. a)Topviewofadiamondstructureof1lmsilicacolloids.Reproduced from[49].b)Sideviewofalayer-by-layerstructure.Reproducedwithper- missionfrom[51].Copyright2003Macmillan. styrene microspheres, point defects could be embedded into theresultingstructure.Thesamenanorobotwasalsousedto fabricatewoodpilestructurespresentinga cPBG (Fig.6b).[51] Individual InP plates were fabricated by conventional inte- grated circuit processing, and then robotically stacked and aligned with the nanorobot to form structures of up to 20layers. An advantage of using microfabricated InP plates overmicrospheresisthatthestructurewasbuiltonelayerata time rather than one particle at a time. The inclusion of de- fects was straightforward, simply requiring that one of the plates contained a pre-designed defect. Transmission spectra at varying angles were taken from an eight-layer structure Figure7.SEMimagesofPhCsfabricatedbydirectwriting.a,b)Layer-by- containing an embedded defect formed by varying the pitch layerstructurescreatedbyink-polymerwriting[55,58];b)showsalinear within two of the central layers. Comparison to calculations defect from a missing rod; c,d)Slanted-pore and layer-by-layer struc- suggestedthataresonantguidedmodewasbeingexcitedand tures, respectively, fabricated using TPP [78, 79]. (a) reproduced from [55],(b)courtesyofG.GratsonandJ.Lewis,(c)reproducedwithpermis- transmittedthroughthesample. sion from Markus Deubel [79]. Copyright 2004 American Institute of LaseropticaltrappinghasnotyetbeenusedtocreatePhC- Physics.(d)Reproducedwithpermissionfrom[78].Copyright2004Mac- containing defects, but the potential is certainly present. millan. 2670 www.advmat.de ©2006WILEY-VCHVerlagGmbH&Co.KGaA,Weinheim Adv.Mater.2006,18,2665–2678 P.V.Braunetal./IntroducingDefectsin3DPhotonicCrystals R E V I E W Robotic ink writing consists of the fabrication of 3D mi- 3.2.ExtrinsicDefects croperiodic polymer scaffolds via direct-write assembly of a concentrated engineered polyelectrolyte ink that is ex- 3.2.1.HolographicLithography truded through a micrometer-diameter orifice.[60] If the ink rheology is properly designed, the deposited filaments TheconceptofholographiclithographyforPhCfabrication maintaintheircylindricalshapewhilespanningunsupported wasfirstdemonstratedbyBergeretal.andisdeceptivelysim- regions in the structure, yet adhere to both the substrate ple.[84]Inherently,itconsistsofrecordingthehologramcreat- and the underlying layers. By means of this method, layer- edbytheinterferenceofmultiplebeamsoflightintoaphoto- by-layer[27] and woodpile[61] structures have been ob- resist.TheirfirstholographicPhCwasa2Dtriangularlattice tained.[55] The introduction of line defects can be easily obtained from the interference of three beams in a photore- achieved by modifying the computer design to move or re- sist;thestructurewassubsequentlyreplicatedinGaAs.Inho- move individual lines (Fig. 7b). To date, the minimum rod lographic lithography, the minimum number of beams re- diameter is ca. 1 lm and consequently the stop band lies quired to form an n-dimensional lattice is n+1, thus four between 3 and 5 lm. As is the case for PhCs made of poly- beamswererequiredtoobtainthefirst3DPhCwiththistech- mers,therefractive-indexcontrastisnotsufficienttogener- nique.[85]Thephotoresistusedinthatstudy,andinmostsub- ate a cPBG, so conversion of the polymer template to a sequentstudies,wasSU-8,aresistthathasproventobevery high-refractive-index material is necessary. In a recent pub- useful due to its low intrinsic absorption and capability for lication we demonstrated this conversion and characterized formingsub-micrometerfeatures.[86] the resulting optical properties.[55] Theoretical and experi- Therearetwokeyreasonswhyholographiclithographyhas mental optical studies on structures containing defects are thepotentialtobecomealeadingmethodfor3DPhCfabrica- yettobeperformed. tion.First,holographyishighlyamenableforlarge-scalepro- Direct laser writing through multiphoton polymerization duction. Second, addition of optically active defects into the (MPP)isanotherpowerfulrouteto3Dfabrication.MPPwas photoresist prior to development via laser direct writing is first developed by Strickler and Webb,[62] and has now been possible. The direct writing of features in holographic PhCs usedtocreatearangeofhigh-resolution3D free-formstruc- has now been demonstrated in both 2D[87] and 3D[88] struc- tures, including microchannels,[63–65] cantilevers,[66–68] micro- tures(Fig. 8).Todate,theopticalpropertiesofdefectsinho- gears,[69,70] sub-micrometer oscillators,[71] hydrophobicatomic lographically definedPhCshavenotbeen studied,butthis is forcemicroscopytips,[72]andPhCs.[59,67,73–81]Briefly,MPPuti- likelytohappensoon. lizes the nonlinear nature of the multiphoton excitation pro- cess to only excite dye molecules in a very small volume around the focal point, with dimensions on the order of the resolutionlimit.Theseexciteddyemoleculeslocallyinitiatea polymerization.Byscanningthislocalizedexcitationthrough- outa definedvolume, a monomercanbe polymerizedintoa robustintricate3Dpolymerstructure.Thistechniquehasalso beenusedtowriteembeddedfeatureswithinholographicand self-assembledPhCs,seeSections3.2.1and3.2.3,respectively. Inmostcases,MPPisatwo-photonprocess,inwhichcasewe willrefertoitasTPP. TPPisapromising,flexible3D fabricationtechniquethat Figure8. a)SEM image of PhCs fabricated using holographiclithogra- can be used to form both the PhC and, in principle, to phy. b)Confocal microscope image of a feature embedded within the embed arbitrarily complex defects. To date, PhC structures PhCwrittenusingTPP.Reproducedfrom[88]. with layer-by-layer and slanted pore[82] geometries, present- ing stop bands in the IR, have been fabricated (Fig. 7c and d).[59,78,79] Similar to robotic ink writing, the PhC is often There remain, however, several serious issues before the fabricated in a polymer, and thus a similar replication ap- potentialofholographicstructurescanbe realized. Theopti- proach is necessary to create a high-refractive-index con- calpropertiesof3DPhCsformedviaholographyareweaker trast structure.[56] Alternatively, there are certain high- thanexpectedforreasonsthatarenotobvious.Thereareonly refractive-index chalcogenide glasses such as As S that limited reports on the optical response of these structures[89] 2 3 undergo solubility changes upon exposure to light and are and although a direct comparison is difficult, to date, it ap- therefore amenable to direct laser writing.[83] To date, there pearsthatcolloidalcrystals(CCs)presentbetteropticalprop- are no reports of optically active defects incorporated with- erties.Theopticalresponseofholographicstructurescouldbe inTPPPhCs,howevertheprocessisstraightforward. improvedbybetterlasers,photoresists,andprocessingparam- Adv.Mater.2006,18,2665–2678 ©2006WILEY-VCHVerlagGmbH&Co.KGaA,Weinheim www.advmat.de 2671 P.V.Braunetal./IntroducingDefectsin3DPhotonicCrystals W E I V E R eters,buttheseimprovementsarenottrivial.Theseissuesbe- tiltedX-rayirradiationsat35°fromthesubstratenormaland come even more important as the number of interfering with a 120° rotation between exposures. Since the refractive beamsisincreasedtoformmorecomplexstructures(e.g.,dia- indexofPMMAisinsufficienttoopenacPBG,theinterstitial mond or chiral lattices).[90,91] An equally significant issue is space was filled with TiO ormetals.[97] Transmissionand re- 2 thattherefractiveindicesofcommonphotoresistsaretoolow flection spectra revealed the presence of a stop band at to open a cPBG, regardless of the structure, thus, replicating 2.4lm, which is in agreement with transfer matrix method thestructureswithhigh-refractive-indexmaterialsisessential. simulations.Defectscanbeincorporatedintothesestructures Advancesintemplatingsiliconwithpolymericstructures[55,56] via multiple exposure and multilayer resist schemes indicatepossibleroutestocreatestructureswithenhancedre- (Fig.9).[100–102] Additional X-ray or e-beam exposures have fractive-index contrast.Also,veryrecently,Summersandco- beenproposedforthedefinitionof2Ddefectsinonelayerof workers[92]demonstratedtheuseofatomiclayerdepositionto a multilayer resist, possibly enabling the incorporation of a replicatethestructureofaholographicPCintoTiO ,ahigh- plane of embedded 2D defects within PBG structures fabri- 2 refractive-indexmaterialwhichistransparentinthevisiblere- cated using LIGA.[100,102] The fact that synchrotronradiation gion.Finally,sincetheexposurewavelengthisdirectlypropor- isrequired,coupledwithissuesinuniformityforsub-microm- tionaltothelatticeparameterofthecrystal,thechemistryof eter structures, probably limits the general applicability of the photoinitiating system may need to be changed to tune LIGAforPhCsoperatingatlongerwavelengths. the spectral position of the optical features. Although possi- ble, this not a trivial task.[93] Even given these issues, holo- graphic lithography coupled with direct laser writing is cer- tainlyanareaofgreatpotential. Avariant to holographiclithographyin which the interfer- ence is created from a phase mask, as opposed to multiple beaminterference,wasdemonstratedbyRogersandco-work- ers.[94]Thephasemaskisfirstdefinedina‘master’,fabricated through photolithography. This master is used to create a poly(dimethylsiloxane) (PDMS) flexible phase mask. The Figure9.SEMimageofmetallicYablonovitestructuresfabricatedusing PDMSphasemaskisplacedindirectcontactwiththesurface LIGA.Linearresist-baseddefectscanbeseenwithinthestructure.Repro- ofaphotoresist(SU-8)andilluminatedwithUVlight,result- ducedwithpermissionfrom[102].Copyright2005IOPPublishing. ing in a complex 3D intensity distribution in the photoresist. Apart from the simplicity of this method, a very interesting featureofthisfabricationtechniqueisthatitallowstheintro- 3.2.3.ColloidalSelf-Assembly ductionofbothintrinsicandextrinsicdefects.Theformerare obtained by creating defects in the original 2D master tem- Self-assembled CCs have been widely studied as routes to plate.[94]Itshouldbepossibletoformthelatterviadirectlaser PhCsandPBGmaterials,insubstantialpartduetotheirease writing,asdemonstratedinPhCsobtainedbymultibeamho- offabricationandlowcost,butalsoduetotheirexcellentop- lographiclithography.Opticalcharacterizationofthesestruc- ticalproperties.TypicalcolloidalPhCsconsistof3Dface-cen- tureshasyettobepublished. teredcubic(fcc)arrays,self-assembledfromhighly monodis- perse silica or polystyrene microspheres with diameters 3.2.2.X-RayLithography,Electroforming,Molding(LIGA) rangingfromca. 200nmto2lm.[103]Mostearlyresearchfo- cusedonimprovingCCqualityandinvertingtheminhigh-re- LIGA is a deep-etch X-ray lithography microfabrication fractive-index materials.[104] This is necessary because only a processwhichcombinesX-raylithography,electrodeposition, high-refractive-index contrast inverse-fcc geometry can pos- and/or molding to circumvent the layer-to-layer registration sessacPBG.[105]ToutilizeCCsformostcPBGapplications,it and multistep processing issues found in conventional layer- isadditionallynecessarytoincorporatedesigneddefectswith- by-layer lithographic approaches.[95,96] Through LIGA, high- inthem.Sincethecontrolledadditionofwell-definedintrinsic aspect-ratio PhCs up to six crystal periods thick have been defects is not compatible with the self-assembly process, the fabricated with sub-micrometer precision and low surface viabilityofCCsformanyPBG-basedapplicationsreliesona roughness.Synchrotron-baseddeepX-raysareusedtoexpose compatible external-defect fabrication technique. Substantial poly(methylmethacrylate)(PMMA)throughapatternedab- strideshavebeenmadeoverthelastfiveyearsinthedevelop- sorbermask.TheexposedPMMAisremoved,andtheresult- mentofnovelprocessesfortheincorporationofpoint,linear, ingstructurecanserveasamoldthatisfilledbyelectrodepo- planar,and3Ddefectswithinself-assembledPhCs. sition or casting, forming a template of the PMMA mold in Substitutional Doping: Although well-defined defects in metal,ceramic,orcomposites.[97] CCs may have the greatest long-term potential, significant This technique enabled micrometer-scale fabrication of in- strides in understanding the impact of defects can be deter- verseYablonovite[98]or“threecylinder”structures.[99]PMMA minedthroughtherandomplacementofdefects.Thefirstin- was exposed through a triangular array of holes via three tentionalincorporationofopticaldefectstatesinaCCwasac- 2672 www.advmat.de ©2006WILEY-VCHVerlagGmbH&Co.KGaA,Weinheim Adv.Mater.2006,18,2665–2678 P.V.Braunetal./IntroducingDefectsin3DPhotonicCrystals R E V I E W complishedintrinsicallyviasubstitutionaldoping.Watsonand thedepositionofanintermediatelayerandperhaps2Dlitho- co-workersdopedcolloidal suspensionswithmicrospheresof graphic patterning of this layer, and is concluded with the differentsizesordielectricconstants,andusedthismixtureto growthofanoverlyingCC.Additionalstepsmayincludefill- growCCswithsubstitutionalimpurities.[106]Near-IRtransmis- ing the interstitial space of the CC and template removal. In sionspectroscopywasusedtoprobetheopticalpropertiesof thisfashion,embeddedfeaturesoflimiteddimensionalitycan thewetcrystalsdopedwithbothdonorandacceptorimpuri- bedefinedwithincolloidalPhCs. ties.Defectmodesaswellasasignificantwideningoftheopti- Through e-beam and nanoimprint lithography extrinsic cal stop band were observed (Fig. 10). Spectra simulated pointdefectscanbedefinedinoronCCs(Fig.11).E-beamli- usingthetransfermatrixmethod[107]qualitativelyagreedwith thographywasusedtoindividuallyexposeanarrayofspheres experimental results, though a quantitative comparison was on the top layer of a CC and it was proposed that an addi- notpossible.AnotherdopingstudybyGatesandXiaandlat- tional CC could be grownbeforedevelopmentto embed the erbyLopezandco-workersobservedareductioninattenua- defects.[110] Nanoimprint lithographywas used to introducea tionoftransmittancewithintheopticalstopbandwithincreas- plane of point defects between two colloidal multilayers.[111] AlignmentofdefectswiththeCClatticewasnotpossibleand multiple additional processing steps were required to embed the layer of defects; however, since nanoimprint lithography isaparallel,lesstime-consumingprocessthane-beamlithog- raphy, it may still find application. It will be interesting to comparetheopticalpropertiesofa2Dembeddedlayerofex- trinsic point defects with those from randomly three-dimen- sionallydistributedintrinsicpointdefectsintroducedviasub- stitutionaldoping(seeprevioussection). It is straightforward to extend e-beam and nanoimprint techniques to define linear and other 2D defects in CCs.[111– 114] A similar approach to define embedded linear extrinsic defects is to use conventional photolithography to pattern a photoresistdepositedonaCC(Fig.12).Followingtheassem- bly of another crystal on this structure and removal of the photoresist,buried linear air defects have been incorporated within CCs.[115,116] While these linear defects have been sug- gestedforuseaswaveguides,opticshaveonlybeenmeasured Figure10. Near-IR transmission spectra for CCs containing intrinsic normalto theirlong axis.[115] Thereis a reportthat measures polystyrenedonorimpurities (10% numberfraction) expressed in nor- transmission through “opal-clad” waveguides, however, in malizedfrequencyunits(c/a).Thehostcolloiddiameteris173nm,the thatcase thewaveguideis notcompletely surroundedby the dopant colloids have diameters of 204, 214, and 222nm. The dotted CC.[117] curveiscollectedfromanundopedCC,theothercurvesarefromdoped Anothertechniqueusedtodefineextrinsiclineardefectsin CCs.Reproducedwithpermissionfrom[106].Copyright1996theAmeri- canPhysicalSociety. CC-based PhCs is laser microannealing, which was used to write micrometer-scale defects on the surface of silicon in- verse opals by inducing a localized phase transition from ing impurity concentration in dried CCs, however distinguishable defect modes within the gap were notobserved.[108,109] Substitutionaldoping doesnot afford control of defectplacementandcanthereforeonlybeusedto create randomly distributed point defects. For the fabrication of more complex defect structures, re- quiredformanyadvancedfunctionalities,anexter- nalfabricationtechniqueisnecessary. 2DEmbeddedDefects viaMultistep Procedures: Severalmultistepprocedureshavebeendeveloped for the fabrication of extrinsic point, linear, and planar defects within self-assembled PhCs. These Figure11.a)SEMimagepresentingarectangularlatticeofpointdefectsdefinedon approaches generally incorporate a 2D plane of thesurfaceofaPMMACC(latticeparameteris498nm).b)Proposedprocessforem- defects sandwiched between two CCs. The proce- beddingdefects:1.e-beamexposure,2.growthofsecondCC,3.developmentofex- dure begins with the growth of a CC, followed by posedregions.Reproducedwithpermissionfrom[110].Copyright2005Elsevier. Adv.Mater.2006,18,2665–2678 ©2006WILEY-VCHVerlagGmbH&Co.KGaA,Weinheim www.advmat.de 2673

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