DTIC ADA366044: 7TH International Symposium: Nanostructure: Physics and Technology

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1999 Conference Proceedings
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7th International Symposium: Nanostructure: Physics and Technology F61775-99-WFO30
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loffe Institute
26 Polytechnicheskaya N/A
St. Petersburg 194021
Russia
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13. ABSTRACT (Maximum 200 words)
The Final Proceedings for 7th International Symposium: Nanostructure: Physics and Technology, 14 June 1999 -18 June 1999
This is an interdisciplinary conference. Topics include Physics of heterostructures with quantum wells and superlattices; transport phenomena
in nanostructures; 2D electron gas; far-infrared phenomena in nanostructures; physics of heterostructures with quantum wires and quantum
dots; single electron phenomena in nanostructures; nanostructure technology; tunneling technology; excitons in nanostructures; laser and
optoelectronic devices base on nanostructures; nanostructure characterization and novel atomic-scale probing techniques; physics of silicon-
based nanostructures and nanostructure devices.
14. SUBJECT TERMS 15. NUMBER OF PAGES
565
EOARD, Semiconductors, Microelectronics, Nanotechnology 16. PRICE CODE
N/A
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OF REPORT OF THIS PAGE OF ABSTRACT
UNCLASSIFIED UNCLASSIFIED UNCLASSIFIED UL
NSN 7540-01-280-5500 Standard Form 298 (Rev. 2-89)
Prescribed by ANSI Std. 239-18
298-102
NANOSTRUCTURES:
PHYSICS AND TECHNOLOGY
7th International Symposium
St Petersburg, Russia, June 14-18, 1999
Co-Chairs
Zh. Alferov
L. Esaki
PROCEEDINGS
loffe Institute
St Petersburg, 1999
'fTIC QUALITY IrvpNJ,4-
The Seventh Symposium is held in the year of the 275th anniversary
of the Russian Academy of Sciences.-highest scientific society and
principal coordinating body for research in natural and social sciences,
technology and production in Russia. Founded in St Petersburg in 1724
by Peter the Great, the Academy was later known under various names
S17_2o4 A, and regained the present name in 1991. The first Academy building in
St Petersburg is shown in the centre of the anniversary logo.
Copyright © 1999 by Ioffe Institute and individual contributors. All rights reserved. No
part of this publication may be multiple copied, stored in a retrieval system or transmitted in
any form or by any means, electronic, mechanical, photocopying, recording or otherwise,
without the written permission of the publisher. Single photocopies of single articles may
be made for private study or research.
ISBN 5-86763-008-0
The International Symposium "Nanostructures: Physics and Technology" is held annually since
1993. The first Symposium was initiated by Prof. Zh. Alferov and Prof. L. Esaki who are its
permanent co-chairs. By tradition the Proceedings of the Symposium is published before the
beginning of the meeting.
More detailed information on the Symposium is presented on the World Wide Web
http://www.ioffe.rssi.ru/NANO-99/
This volume was composed at the Information Services and Publishing Department of the loffe
Institute from electronic files submitted by the authors. When necessary these files were converted
into the Symposium LATEX 2s style without any text revisions. Only minor technical corrections
were made by the composers.
Information Services and Publishing Department
Ioffe Physico-Technical Institute
26 Polytechnicheskaya, St Petersburg 194021, Russia
Phones: [phone], 247 9932
Fax: [phone]
E-mail: [email protected]
Printed in Russian Federation
The Symposium is held under the auspices of
the Russian Academy of Sciences
Organizers
loffe Physico-TechnicalI nstitute
Scientific Engineering Centerf or
Microelectronicsa t the loffe Institute
in association with
Research Councilf or the Project
"Physics of Solid State Nanostructures"
at the Ministry of Science and Technologies of Russia
and
the institutions of the Russian Academy of Sciences
Division of General Physics andA stronomy
St PetersburgS cientific Center
Acknowledgments
The Organizers gratefully acknowledge the following
for their contribution to the success of the Symposium:
Ministry of Science and Technologies of Russia
Russian Foundationf or Basic Research
AIXTRON AG, Germany
European Office of Aerospace Research and Development
Air Force Office of Scientific Research
United States Air Force Research Laboratory
United States Army Research, Development and
Standardization Group (UK)
United States Office of Naval Research, Europe
Location and Date
The Symposium is held in St Petersburg's recreation area Repino
on June 14-18, 1999.
Programme Committee
R. Suris, Chair (St Petersburg)
L. Asryan, Secretary (St Petersburg)
Zh. Alferov (St Petersburg) P. Kop'ev (St Petersburg)
A. Andronov (Nizhnii Novgorod) Z. Krasil'nik (Nizhnii Novgorod)
N. Bert (St Petersburg) V. Kulakovskii (Chernogolovka)
A. Chaplik (Novosibirsk) M. Kupriyanov (Moscow)
V. Dneprovskii (Moscow) V. Mokerov (Moscow)
B. Egorov (St Petersburg) V. Panov (Moscow)
A. Gippius (Moscow) E. Poltoratskii (Moscow)
Yu. Gulyaev (Moscow) N. Samsonov (Moscow)
S. Gurevich (St Petersburg) N. Sibel'din (Moscow)
L. Keldysh (Moscow) V. Timofeev (Chernogolovka)
Yu. Kopaev (Moscow) B. Zakharchenya (St Petersburg)
Organizing Committee
M. Mizerov, Chair (Centerf or Microelectronics)
B. Egorov, Secretary (loffe Institute)
L. Asryan (Ioffe Institute)
D. Donskoy (St PetersburgS cientific Center)
V. Grigor'yants (Ioffe Institute)
P. Kop'ev (loffe Institute)
N. Sibel'din (Lebedev Physical Institute)
E. Solov'eva (loffe Institute)
V. Zayats (Division of General Physics and Astronomy)
AIXTRON Young Scientist Award
This year the Symposium Programme Committee and the Board of AIXTRON AG (Ger-
many) established a special award to honour a young scientist who will present at the
Symposium the best paper in the field of solid state nanostructures. The award consists of
a diploma and a $500 reward sponsored by AIXTRON.
The awardee will be selected by the Award Committee nominated by the Programme
Committee. The Chair of the Award Committee will announce the winner at the Award
Ceremony scheduled for the last day of the Symposium.
Award Committee
Zh. Alferov, Chair (Russia)
A. Andronov (Russia) J. Lott (USA)
M. Heuken (Germany) H. Sakaki (Japan)
Yu. Kopaev (Russia) R. Suris (Russia)
Contents
Opening Session
os.021 S. V Ivanov, A. A. Toropov, T. V. Shubina, S. V. Sorokin, A. V. Lebedev,
I. V. Sedova and P. S. Kop'ev
II-VI laser heterostructures with different types of active region ......... I
Quantum Wires and Quantum Dots
OWR/QD.021 S. Nagaraja and J.-P.L eburton
Electronic properties and many-body effects in quantum dots ..... . . . . 7
QWR/QD.031 M. Straf/burg, R. Engelhardt, R. Heitz, U. W. Pohl, S. Rodt, V. Turck,
A. Hoffmann, D. Bimberg, I. L. Krestnikov, N. N. Ledentsov, Zh. I. Alferov,
D. Litvinov, A. Rosenauer and D. Gerthsen
Quantum dots formed by ultrathin CdSe-ZnSe insertions ............... 13
OWR/QD.05 V K. Kalevich, K. V. Kavokin, M. Paillard, X. Marie, P. Le Jeune, T. Amand,
M. N. Tkachuk, V. M. Ustinov, N. N. Ledentsov and B. P. Zakharchenya
Spin separation in self-organized quantum dots under optical orientation
of electrons ....... ................................... 20
owRoo.o06 L E. Kozin, 1.V . Ignatiev, S. Nair, H.-W. Ren, S. Sugou and Y Masumoto
LO phonon mediated relaxation in InP self assembled quantum dots
in electric field ........................................ 24
OWPJOD.07 V Zwiller, M.-E. Pistol, M. A. Odnoblyudov and L. Samuelson
Temperature studies of single InP quantum dots .................... 28
OWRIOD.08 M.-E. Pistol, D. Hessman, C. Pryor and L. Samuelson
Stark shift of individual quantum dots ........ .................. 31
OWPIOo.09 D. M. Hofmann, A. Hofstaetter, F. Henecker, B. K. Meyer, N. G. Romanov,
A. I. Ekimov, T. Gacoin, G. Counio and J. P. Biolot
Optical and magnetic resonance investigations on Mn doped CdS nanocrystals . 34
QWR/OD.1op N. S. Averkiev, S. 0. Kognovitsky, R. P. Seisyan and V. V. Travnikov
A new type of surface waves on the open metallized nanowires ...... .... 38
0WR/QD.11p E. B. Dogonkine, A. S. Polkovnikov and G. G. Zegrya
Mechanisms of Auger recombination in semiconductor quantum wires ..... .42
OWRPQD.12p V. Davydov, L V Ignatiev, I. E. Kozin, J.-S. Lee, H.-W. Ren, S. Sugou
and Y Masumoto
"Unusual" temperature behavior of the photoluminescence of the InP and
InGaAs quantum dots under quasiresonance excitation ................ 46
oWPJOD.13p V. P. Evtikhiev, L V Kudryashov, E. Yu. Kotel'nikov, A. K. Kryganovskii,
A. S. Shkolnik, A. N. Titkov and V. E. Tokranov
Effect of GaAs (001) surface misorientation on the emission from MBE grown
InAs quantum dots ...................................... 50
OWR0aD.14p H.-W. Ren, S. Sugou, Y. Masumoto, L Ignatiev and I. Kozin
Cold anti-Stokes photoluminescence of InP self-assembled quantum dots
in the presence of electric current .... . ... ................. 54
V
vi
owRIOD.lsp D. A. Mazurenko, A. V. Scherbakov, A. V. Akimov, D. L. Fedorov, A. J. Kent
and M. Henini
Photoluminescence of InAs/GaAs quantum dots in the presence of subband
1.06 /,m excitation ......... ................................ 58
OWPJoD.16p D. B. Turchinovich, V. P. Kochereshko, H. Mariette, R. T. Cox
and Y. Merle d'Aubigne
Cladding layer effect on the reflectance and transmission spectra
in the CdTe/CdZnTe MQWs ....... ..................... .. . 61
OWRIQD.17p S. Yu. Verbin, B. V. Novikov, R. B. Juferev, Yu. Stepanov, A. B. Novikov,
Dinh Son Thach, I. Shchur, V. G. Talalaev, G. Gobsch, R. Goldhahn, N. Stein,
A. Golombek, G. E. Cirlin, V. G. Dubrovskii, V. N. Petrov, A. E. Zhukov,
A. Yu. Egorov and V. M. Ustinov
Photoluminescence study of electronic structure of InAs quantum dots
grown on GaAs vicinal surfaces ..... . ......................... 63
OWwOD.18p D. A. Vinokurov, V. A. Kapitonov, Z. N. Sokolova and I. S. Tarasov
Photoluminescence study of InP nanoscale islands grown by MOVPE
in InGaAs/GaAs matrix ........ ............................. 67
OWRiOD.19p G. Zanelatto, Yu. A. Pusep, N. T. Moshegov, A. I. Toropov, P. Basmaji
and J. C. Galzerani
Raman study of the topology of InAs/GaAs self-assembled quantum dots . . . . 70
OWRIOD.20p G. Zegrya, M. Tkach, 0. Makhanets and V. Zharkoy
Electron in quasiplane superlattice of cylindric quantum dots .............. 74
Transport in Nanostructures
TN.01 K. S. Novoselov, Yu. V. Dubrovskii, V. A. Sablikov, D. Yu. Ivanov, E. E. Vdovin,
Yu. N. Khanin, V. A. Tulin, D. Esteve and S. Beaumont
Nonlinear conductance of quantum wires normally pinched-off by surface
potential ....... ................... ..... ................ 77
TN.02 V. T. Petrashov, L A. Sosnin, I. Cox, A. Parsons and C. Troadec
Mesoscopic superconductors in proximity to nanomagnets .. ...... 81
TN.03 N. A. Maleev, A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, V. M. Ustinov,
P. S. Kop'ev, Y. Wu, R. Zhang and S. F. Li
Transport properties of InAlAs/InGaAs/InP graded channel pseudomorphic
high electron mobility structures ....... ......................... 85
TN.04p L. V Gornyi, A. G. Yashenkin and D. V. Khveshchenko
Coulomb drag in double layer systems with correlated disorder ............ 88
TN.05p P.K leinert and V. V. Bryksin
Quantum transport theory for semiconductor superlattices ........ . .... .. 92
TN.06p A. N. Lachinov, T. G. Zagurenko, V. M. Kornilov and R. Z. Valiev
Influence of structural transition in metal on charge transport in nanocrystal
metal-polymer-metal system .... .............................. 95
TN.07p G. M. Mikhailov, I. V. Malikov, A. V. Chernykh, E. Olsson and L. Ryen
Influence of a built-in potential on electron transport properties of metallic
ballistic structures, as evidence of quantum-well effect ................. 98
"TN.08p S. Morozov, A. Balandin, S. Cai, R. Li, Yu. Dubrovskii, K. L. Wang,
G. Wijeratne and C. R. Viswanathan
Low flicker noise GaN/AlGaN heterostructure field effect transistors
with submicrometer channel ....... .......... ............ .... 102
vii
TN.09p 0. E. Raichev and P Vasilopoulos
Influence of a magnetic field on the Coulomb drag between quantum wires
in the ballistic regime ........ .............................. 106
TN.10p E. L. Shangina
Scattering processes in the structures with one-dimensional lateral superlattice . 110
Lasers and Optoelectronic Devices
LOED.011 J. A. Lott
Progress in red vertical cavity surface emitting lasers .................. 114
LOED.03 D. L. Huffaker, 0. Shchekin, G. Park, Z. Z. Zou, S. Csutak and D. G. Deppe
Temperature dependence of spontaneous emission and threshold characteristics
for 1.3 Am InGaAs/GaAs quantum dot GaAs-based lasers . ............. 120
LOED.04 A. V Sakharov, W. V. Lundin, V. A. Semenov, A. S. Usikov, N. N. Ledentsov,
A. F. Tsatsul'nikov, Zh. I. Alferov, A. Hoffmann and D. Bimberg
Surface-mode lasing from optically pumped InGaN/GaN heterostructures ... 124
LOED.05 A. R. Kovsh, D. A. Livshits, A. E. Zhukov, A. Yu. Egorov, V. M. Ustinov,
M. V. Maximov, N. N. Ledentsov, P. S. Kop'ev, Zh. I. Alferov and D. Bimberg
3.3 W injection heterolaser based on self-organized quantum dots .......... 128
LOED.06 L L. Krestnikov, N. A. Maleev, M. V. Maximov, A. F Tsatsul'nikov, A. E. Zhukov,
A. R. Kovsh, I. V. Kochnev, N. M. Shmidt, N. N. Ledentsov, V. M. Ustinov,
P. S. Kop'ev, Zh. I. Alferov and D. Bimberg
1.06 and 1.3 /m resonant cavity-enhanced photodetectors based on InGaAs
quantum dots . .................................. .... ...... 131
LOED.07 M. V Maximov, Yu. M. Shernyakov, A. F. Tsatsul'nikov, B. V. Volovik,
D. A. Bedarev, I. N. Kaiander, N. N. Ledentsov, A. E. Zhukov, A. R. Kovsh,
V. M. Ustinov, P. S. Kop'ev, Zh. I. Alferov and D. Bimberg
Lasing from quantum dots formed by activated alloy spinodal decomposition
on InAs stressors ....................................... 135
LOED.08 A. F Tsatsul'nikov, N. A. Bedarev, A. R. Kovsh, P. S. Kop'ev, N. N. Ledentsov,
N. A. Maleev, Yu. G. Musikhin, M. V. Maximov, A. A. Suvorova, V. M. Ustinov,
B. V. Volovik, A. E. Zhukov, D. Bimberg and P. Werner
1.3 jm emission from 2 ML InAs quantum dots in a GaAs matrix .. ...... 139
LOED.09p Ju. V Alekseeva, M. S. Shatalov and S. A. Gurevich
QW diode laser modulation by lateral gain tailoring ................... 142
LOED.10p V. L Kopchatov, N. Yu. Gordeev, S. V. Ivanov, P. S. Kop'ev, H.-J. Lugauer,
G. Reuscher, A. Waag and G. Landwehr
Peculiarities of radiative recombination in BeMgZnSe/ZnCdSe injection lasers . 146
LOED.11p N. A. Pikhtin, A. Yu. Leshko, A. V. Lyutetskiy, S. A. Shuravin, A. L. Stankevich,
N. V. Fetisova and I. S. Tarasov
High power broadband singlelobe InGaAsP/InP superluminescent diode . . .. 150
LOED.12p L S. Tarasov, L. S. Vavilova, V. A. Kapitonov, D. A. Livshits, A. V. Lyutetskiy,
A. V. Murashova, N. A. Pikhtin and G. V. Skrynnikov
Peculiarities of photoluminescence and electroluminescence properties
of spontaneously formed periodical InGaAsP/GaAs structures ........... 154
2D Electron Gas
2DEG.01I A. 0. Govorov, M. Rotter, M. Streibl, C. Rocke, A. V. Kalameitsev, A. Wixfor and
J. P. Kotthaus
Acousto-electric transport through a two-dimensional system in the nonlinear
regime .......... ...................................... 157
viii
2DEG.02 R. T E van Schaijk,A . de Visser, S. Oltshoom, H. P Wei and A. M. M. Pruisken
The plateau-insulator phase transition in the quantum Hall regime ........ .163
2DEG.03 I. L. Drichko, A. M. Diakonov, V. D. Kagan, V. V. Preobrazenskiy, D. A. Pristinski,
I. Yu. Smirnov and A. I. Toropov
High-frequency hopping conductivity of two-dimensional electronic system
in GaAs/AIGaAs heterostructures (acoustical method) .................. 167
2DEG.04 P M. Koenraad,A . F. W. van de Stadt, J. H. Wolter A. Dekeyser, R, Bogaerts and
F. Herlach
Reduction of the intersubband scattering delta doped layers by the Lorentz-force
of an in-plane magnetic field ....... ........................... 171
2DEG.05p N. S. Averkiev, L. E. Golub and S. A. Tarasenko
Role of intensive intersubband transitions in Shubnikov-de Haas oscillations
and in weak localization ........ ............................. 174
2DEG.06p D. A. Bakaushin, A. S. Vedeneev, V. E. Sizov, B. A. Aronzon, N. K. Chumakov,
A. B. Davydov and E. Z. Meilikhov
High-temperature conductance quantization: the case of quasi-2D percolating
structures ........... .................................... 176
2DEG.07p E. M. Baskin and M. V Entin
Antidot lattice in QHE regime: macroscopic limit ..... ............... 178
2DEG.08p V I. Borisov, V. A. Sablikov, A. I. Chmil' and I. V. Borisova
Real-space transfer of electrons under a random potential: a possible mechanism
of current instability in heterostructures ...... ..................... 182
2DEG.09p A. V. Chaplik and L. L Magarill
Electrostatics and kinetics of 2D electrons in lateral superlattices on vicinal planes 186
2DEG.*op A. V Germanenko, V. A. Larionova, G. M. Minkov and S. A. Negashev
Anomalous magnetoconductance due to weak localization in 2D systems with
anisotropic scattering: computer simulation . . .... ................ 190
20EG.1 p M. V Yakunin, Yu. G. Arapov, 0. A. Kuznetsov and V. N. Neverov
Unusually wide plateau of the quantum Hall effect in a quasi bilayer hole
system inside the p-GeSi/Ge/p-GeSi quantum well .... ............... 194
Ordered Arrays of Nanoparticles
OAN.01I A. A. Fraerman, S. A. Gusev, I. M. Nefedov, I. R. Karetnikova, L. A. Mazo,
M. V. Sapozhnikov, Yu. N. Nozdrin, I. A. Shereshevskii and L. V. Suhodoev
2D lattices of ferromagnetic nanoparticles as supermagnetics ............. 198
OAN.02 S. A. Gusev , S. V. Gaponov, A. A. Fraerman, L. A. Mazo, M. V. Sapozhnikov,
Yu. N. Nozdrin and L. V. Suhodoev
Fabrication and magnetic properties of 2D arrays of nanoparticles ........ .202
OAN.03 V M. Kozhevin, D. A. Yavsin, S. A. Gurevich, V. M. Kouznetsov, V. M. Mikushkin,
S. Yu. Nikonov, A. N. Titkov and A. V. Ankudinov
Granulated metallic nanostructure fabricated by laser ablation ............ 205
OAN.04 V. N. Bogomolov, N. A. Feoktistov, V. G. Golubev, J. L. Hutchison,
D. A. Kurdyukov, A. B. Pevtsov, J. Sloan and L. M. Sorokin
Three-dimensional (3D) arrays of silicon nanosize elements in the void
sublattice of artificial opals ........ ........................... 209
OAN.05p A. Susha, D. Su and M. Giersig
The preparation of ordered colloidal magnetic particles by magnetophoretic
deposition ......... .................................... 213