2N3904/MMBT3904/PZT3904 NPN General Purpose Amplifier

238 Pages·2010·8.66 MB·English

2
N
3
9
0
4

/

M
M
B
2N3904 MMBT3904 PZT3904 T
3
9
0
4

C C /

P
Z
E T
E 3
C
C TO-92 9
BE SOT-23 B SOT-223 B 0
4
Mark: 1A
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier.
Absolute Maximum Ratings*
T = 25°C unless otherwise noted
A
Symbol Parameter Value Units
V Collector-Emitter Voltage 40 V
CEO
V Collector-Base Voltage 60 V
CBO
V Emitter-Base Voltage 6.0 V
EBO
I Collector Current - Continuous 200 mA
C
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T = 25°C unless otherwise noted
A
Symbol Characteristic Max Units
2N3904 *MMBT3904 **PZT3904
PD Total Device Dissipation 625 350 1,000 mW
Derate above 25°C 5.0 2.8 8.0 mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
 2001 Fairchild Semiconductor Corporation 2N3904/MMBT3904/PZT3904, Rev A
2
NPN General Purpose Amplifier N
3
(continued) 9
0
4
Electrical Characteristics
TA = 25°C unless otherwise noted /
M
Symbol Parameter Test Conditions Min Max Units
M
B
T
OFF CHARACTERISTICS
3
V(BR)CEO Collector-Emitter Breakdown IC = 1.0 mA, IB = 0 40 V 9
Voltage 0
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 60 V 4
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V /
P
IBL Base Cutoff Current VCE = 30 V, VEB = 3V 50 nA Z
ICEX Collector Cutoff Current VCE = 30 V, VEB = 3V 50 nA T
3
9
0
ON CHARACTERISTICS*
4
h DC Current Gain I = 0.1 mA, V = 1.0 V 40
FE C CE
I = 1.0 mA, V = 1.0 V 70
C CE
I = 10 mA, V = 1.0 V 100 300
C CE
I = 50 mA, V = 1.0 V 60
C CE
I = 100 mA, V = 1.0 V 30
C CE
V Collector-Emitter Saturation Voltage I = 10 mA, I = 1.0 mA 0.2 V
CE(sat) C B
I = 50 mA, I = 5.0 mA 0.3 V
C B
V Base-Emitter Saturation Voltage I = 10 mA, I = 1.0 mA 0.65 0.85 V
BE(sat) C B
I = 50 mA, I = 5.0 mA 0.95 V
C B
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V, 300 MHz
f = 100 MHz
Cobo Output Capacitance VCB = 5.0 V, IE = 0, 4.0 pF
f = 1.0 MHz
Cibo Input Capacitance VEB = 0.5 V, IC = 0, 8.0 pF
f = 1.0 MHz
NF Noise Figure IC = 100 µA, VCE = 5.0 V, 5.0 dB
RS =1.0kΩ,f=10 Hz to 15.7kHz
SWITCHING CHARACTERISTICS
td Delay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns
tr Rise Time IC = 10 mA, IB1 = 1.0 mA 35 ns
ts Storage Time VCC = 3.0 V, IC = 10mA 200 ns
tf Fall Time IB1 = IB2 = 1.0 mA 50 ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
2
NPN General Purpose Amplifier N
3
(continued) 9
0
4

Typical Characteristics /

M
M
B
Typical Pulsed Current Gain Collector-Emitter Saturation T
URRENT GAIN450000 vs Collector CurrentV C E = 5V ER VOLTAGE (V)0.15 Volβt a =g 1e0 vs Collector Current 3904 / P
SED C300 125 °C 25 °C EMITT 0.1 125 °C ZT
L PUL200 CTOR- 25 °C 390
CA100 - 40 °C LE0.05 4
h - TYPIFE 00.1 I C - COL1LECTOR CURRE10NT (mA) 100 V - COLCESAT 0.1 I C - COL1LECTOR CURRE10NT (mA- 4)0 °C 100
Base-Emitter Saturation Base-Emitter ON Voltage vs
E (V) Voltage vs Collector Current GE (V) 1 Collector Current
G 1 β = 10 A V = 5V
A T CE
LT OL
O V0.8
R V0.8 - 40 °C ON - 40 °C 25 °C
MITTE 25 °C TTER 0.6
E0.6 MI 125 °C
E- E
V - BASBESAT0.40.1 I C - COL1LECTOR 1C2U5 R°CR1E0NT (mA) 100 V - BASE-BE(ON)00..240.1 I C - COL1LECTOR CURRE1N0T (mA) 100
Collector-Cutoff Current Capacitance vs
vs Ambient Temperature Reverse Bias Voltage
A)500 10
n f = 1.0 MHz
T (100 V = 30V
N CB
E F)
CURR 10 CE (p 45
OR TAN 3 C i bo
CT 1 ACI
LE AP 2
OL 0.1 C Cobo
C
I - CBO 25 50 75 100 125 150 10.1 1 10 100
TA - AMBIENT TEMPERATURE ( °C) REVERSE BIAS VOLTAGE (V)
2
NPN General Purpose Amplifier N
3
(continued) 9
0
4

Typical Characteristics /
(continued)
M
M
B
Noise Figure vs Frequency Noise Figure vs Source Resistance T
3
12 12 9
B)10 I RC S = =1 .200 m0ΩA V C E = 5.0V B)10 I C = 1.0 mA 04
URE (d 8 RI CS == 510.0 µ kAΩ URE (d 8 I C = 5.0 mA I C = 50 µA / P
SE FIG 6 I RC S = =0 .250 m0ΩA SE FIG 6 ZT
NF - NOI 24 I C = 100 µA, R S = 500 Ω NF - NOI 24 I C = 100 µA 3904
0 0
0.1 1 10 100 0.1 1 10 100
f - FREQUENCY (kHz) R S - SOURCE RESISTANCE ( k Ω )
Current Gain and Phase Angle Power Dissipation vs
vs Frequency Ambient Temperature
50 0 1
GAIN (dB)344505 hfe 462000 - Dθ ATION (W)0.75 TO-92 SOT-223
CURRENT 12235050 θ 11184020000EGREES WER DISSIP 0.5 SOT-23
h - fe1005 IV C C E= =1 04 0mVA 116800 P - POD0.25
1 10 100 1000 0
f - FREQUENCY (MHz) 0 25 50 75 100 125 150
TEMPERATURE ( o C)
Turn-On Time vs Collector Current Rise Time vs Collector Current
500 500
I B 1 = I B 2 = 1I0c VC C = 40V I B 1 = I B 2 = 1I0c
40V
s)
n
nS)100 15V ME (100 T J = 25°C
ME ( t r @V C C = 3.0V E TI T J = 125°C
TI RIS
2.0V t - r
10 10
t d @V C B = 0V
5 5
1 10 100 1 10 100
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)
2
NPN General Purpose Amplifier N
3
(continued)
9
0
4

Typical Characteristics (continued) /
M
M
B
T
Storage Time vs Collector Current Fall Time vs Collector Current
3
500 500 9
I = I = Ic I = I = Ic 0
AGE TIME (ns)100 T J T J= 2=5 1°C25°C B1 B2 10 L TIME (ns)100 T J = 2T5 J ° C = 125°C BV1C C B=2 40V10 4 / PZT
t - STORS 10 t - FALf 10 3904
5 5
1 10 100 1 10 100
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)
Current Gain Output Admittance
500 V C E = 10 V os)100 V C E = 10 V
f = 1.0 kHz h f = 1.0 kHz
AIN T A = 25o C µCE ( m T A = 25o C
G N
RENT 100 MITTA 10
R D
U A
h - Cfe UTPUT
O
10 h - oe 1
0.1 1 10 0.1 1 10
I - COLLECTOR CURRENT (mA) I - COLLECTOR CURRENT (mA)
C C
Input Impedance Voltage Feedback Ratio
100 V C E = 10 V _410 )10 V C E = 10 V
ΩANCE (k ) 10 fT = A 1=. 02 k5o HCz K RATIO (x 57 Tf =A 1=. 02 5ko HCz
D C 4
E A
P B
M D 3
T I EE
NPU 1 GE F 2
h - Iie OLTA
V
0.10.1 1 10 h - re 10.1 1 10
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)
2
NPN General Purpose Amplifier N
3
(continued)
9
0
4

/
Test Circuits
M
3.0 V
M
B
T
300 ns 275 ΩΩΩΩΩ 3
9
10.6 V
0
Duty Cycle ===== 2% 4
10 KΩΩΩΩΩ
/
0
- 0.5 V C <<<<< 4.0 pF P
1
Z
<<<<< 1.0 ns T
3
9
0
4
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
3.0 V
10 <<<<< t <<<<< 500 µµµµµs t
1 1
10.9 V 275 ΩΩΩΩΩ
Duty Cycle ===== 2%
0 10 KΩΩΩΩΩ
C <<<<< 4.0 pF
1
- 9.1 V 1N916
<<<<< 1.0 ns
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FASTr™ PowerTrench SyncFET™
Bottomless™ GlobalOptoisolator™ QFET™ TinyLogic™
CoolFET™ GTO™ QS™ UHC™
CROSSVOLT™ HiSeC™ QT Optoelectronics™ VCX™
DOME™ ISOPLANAR™ Quiet Series™
E2CMOSTM MICROWIRE™ SILENT SWITCHER
EnSignaTM OPTOLOGIC™ SMART START™
FACT™ OPTOPLANAR™ SuperSOT™-3
FACT Quiet Series™ PACMAN™ SuperSOT™-6
FAST POP™ SuperSOT™-8
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
2
N
3
9
0
6

/

M
M
2N3906 MMBT3906 PZT3906 B
T
3
9
0
C C 6

/

P
E E Z
C T
CBE TO-92 SOT-23 B SOT-223 B 39
0
Mark: 2A
6
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10 µA to 100 mA.
Absolute Maximum Ratings*
T = 25°C unless otherwise noted
A
Symbol Parameter Value Units
V Collector-Emitter Voltage 40 V
CEO
V Collector-Base Voltage 40 V
CBO
V Emitter-Base Voltage 5.0 V
EBO
I Collector Current - Continuous 200 mA
C
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
T = 25°C unless otherwise noted
A
Symbol Characteristic Max Units
2N3906 *MMBT3906 **PZT3906
PD Total Device Dissipation 625 350 1,000 mW
Derate above 25°C 5.0 2.8 8.0 mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
 2001 Fairchild Semiconductor Corporation 2N3906/MMBT3906/PZT3906, Rev A
2
PNP General Purpose Amplifier N
3
(continued) 9
0
6
Electrical Characteristics
TA = 25°C unless otherwise noted /
M
Symbol Parameter Test Conditions Min Max Units
M
B
T
OFF CHARACTERISTICS
3
V Collector-Emitter Breakdown Voltage* I = 1.0 mA, I = 0 40 V 9
(BR)CEO C B 0
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 40 V 6
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V /
I Base Cutoff Current V = 30 V, V = 3.0 V 50 nA P
BL CE BE
Z
I Collector Cutoff Current V = 30 V, V = 3.0 V 50 nA
CEX CE BE T
3
9
ON CHARACTERISTICS 0
6
h DC Current Gain * I = 0.1 mA, V = 1.0 V 60
FE C CE
I = 1.0 mA, V = 1.0 V 80
C CE
I = 10 mA, V = 1.0 V 100 300
C CE
I = 50 mA, V = 1.0 V 60
C CE
I = 100 mA, V = 1.0 V 30
C CE
V Collector-Emitter Saturation Voltage I = 10 mA, I = 1.0 mA 0.25 V
CE(sat) C B
I = 50 mA, I = 5.0 mA 0.4 V
C B
V Base-Emitter Saturation Voltage I = 10 mA, I = 1.0 mA 0.65 0.85 V
BE(sat) C B
I = 50 mA, I = 5.0 mA 0.95 V
C B
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V, 250 MHz
f = 100 MHz
Cobo Output Capacitance VCB = 5.0 V, IE = 0, 4.5 pF
f = 100 kHz
Cibo Input Capacitance VEB = 0.5 V, IC = 0, 10.0 pF
f = 100 kHz
NF Noise Figure IC = 100 µA, VCE = 5.0 V, 4.0 dB
RS =1.0kΩ,f=10 Hz to 15.7 kHz
SWITCHING CHARACTERISTICS
td Delay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns
tr Rise Time IC = 10 mA, IB1 = 1.0 mA 35 ns
ts Storage Time VCC = 3.0 V, IC = 10mA 225 ns
tf Fall Time IB1 = IB2 = 1.0 mA 75 ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
2
PNP General Purpose Amplifier N
3
(continued) 9
0
6

Typical Characteristics /

M
M
B
Typical Pulsed Current Gain Collector-Emitter Saturation T
RRENT GAIN220500 125v °Cs Collector CurrentV C E = 1.0V R VOLTAGE (V)00.2.35 Vβo=lt 1a0ge vs Collector Current 3906 /
ULSED CU150 25 °C OR EMITTE00.1.25 25 °C PZT3
L P CT 0.1 9
YPICA100 - 40 °C COLLE0.05 125°C - 40 °C 06
h - TFE 500.1 0.2 I C 0-. 5COL1LECT2OR CU5RRE1N0T (2m0A) 50 100 V - CESAT 01 I C - COLLEC1T0OR CURRENT (mA)100 200
Base-Emitter Saturation Base Emitter ON Voltage vs
Voltage vs Collector Current Collector Current
GE (V) 1 β = 10 AGE (V) 1
A - 40 °C T
LT OL0.8
TER VO00..68 25 °C 125 °C R ON V0.6 - 40 °C 25 °C
T E
MI TT 125 °C
V - BASE EBESAT00..2401 I C - COLLEC1T0OR CURRENT (mA)100 200 V - BASE EMIBE(ON)00..2400.1 I C - COLLEC1TOR CURRENT V ( Cm E A =)1 01V 25
Collector-Cutoff Current Common-Base Open Circuit
vs Ambient Temperature Input and Output Capacitance
A) 100 vs Reverse Bias Voltage
n
T ( VC B = 25V 10
N
RE 10 Cobo
R F) 8
U p
OR C 1 NCE ( 6
CT TA
LE CI 4 C i bo
OL 0.1 PA
I - CCBO0.0125 50 75 100 125 CA 020.1 1 10
TA - AMBIENT TEMPERATURE (° C) REVERSE BIAS VOLTAGE (V)